H5CG44MEBDX014 - 16Gb DDR5-4800 x4 SDRAM | SK hynix
MPN: H5CG44MEBDX014 ✓ نشطH5CG44MEBDX014 نظرة عامة
DDR5 SDRAM (Double Data Rate 5 synchronous dynamic random-access memory) is the fifth-generation JEDEC DDR memory standard and the successor to DDR4 in the volatile memory hierarchy: SDRAM -> DDR SDRAM -> DDR5 SDRAM -> main-memory class DRAM. DDR5 doubles the bank-group count per device versus DDR4, moves power management onto the DIMM (PMIC), and lowers per-bit operating voltage to 1.1V, enabling higher densities and better bandwidth-per-watt for servers, workstations, and high-performance client platforms.
Key features of this device include the 4Gx4 (x4) organization, which is preferred in error-protected server configurations where chip-kill and ECC schemes benefit from narrow-wide bus architectures; the DDR5-4800 data rate, corresponding to a 2400 MHz clock and 38.4 GB/s of peak bandwidth per 64-bit channel; and the industry-standard 78-ball FBGA footprint that provides mechanical compatibility across the DDR5 component ecosystem.
Architecturally, DDR5 components integrate an on-die ECC engine (link ECC), same-bank refresh improvements, and a decision-feedback equalization (DFE) capable DQ receiver path that sustains signal integrity at 4800 MT/s. Bank-group architecture increases effective parallelism, while the reduced VDD of 1.1 V lowers dynamic power relative to DDR4 at comparable data rates.
Typical applications include server DIMMs (RDIMM/LRDIMM), embedded computing and storage controllers, industrial compute modules, networking equipment line cards, and replacement sourcing for DDR5-based BOMs.
A key design consideration is that DDR5 SDRAM requires a 1.1 V supply rail with tight tolerance and typically relies on a companion register/PMIC ecosystem on registered modules; signal-integrity closure at 4800 MT/s requires controlled-impedance routing, fly-by command/address topology, and reference-design-validated termination.
This page synthesizes distributor availability data, drop-in family alternatives, and practical design notes not found in the raw manufacturer datasheet listings.
بدائل مباشرة لـ H5CG44MEBDX014 — نفس الحزمة، متوافق دبوس بدبوس. تُستثنى القطع ذات الحزم المختلفة التي تتطلب تعديل PCB.
الطرازات في هذه السلسلة
طرازات من نفس السلسلة متوافقة تمامًا مع H5CG44MEBDX014 (نفس عامل الشكل والبصمة) — يختلف في Organization, Data Rate, Interface Type, Package, Density.
H5CG44MEBDX014N
✅ بديل مباشرتواصل لمعرفة السعر
عرض ورقة البيانات ←H5CG46MEBDX015N
✅ بديل مباشرتواصل لمعرفة السعر
عرض ورقة البيانات ←H5CG46MEBDX017N
✅ بديل مباشرتواصل لمعرفة السعر
عرض ورقة البيانات ←H5CG48MEBDX014N
✅ بديل مباشرتواصل لمعرفة السعر
عرض ورقة البيانات ←H5CG48MEBDX018N
✅ بديل مباشرتواصل لمعرفة السعر
عرض ورقة البيانات ←H5CG44MEBDX014 المواصفات
| نوع الذاكرة | DDR5 SDRAM |
| حجم الذاكرة | 16 Gb |
| التنظيم | 4G x 4 |
| معدل البيانات | 4800 MT/s (DDR5-4800) |
| Clock Frequency | 2400 MHz |
| Supply Voltage (VDD) | 1.1 V |
| العلبة | 78-ball FBGA |
| نوع التركيب | Surface Mount |
| Process Node / Die | 1st-generation M-die (1z-class) |
| نوع الواجهة | Parallel, DDR5 |
| Memory Configuration | DRAM component (not module) |
| On-Die ECC | Yes (DDR5 standard feature) |
| Applications | Server, client, embedded, industrial computing |
دليل تكوين أطراف H5CG44MEBDX014 78-ball fbga
تكوين الأطراف لـ H5CG44MEBDX014 (حزمة 78-ball fbga). يتم تعريف ترقيم الأطراف والوظائف ومخططات التوصيل في ورقة البيانات الفنية من الشركة المصنعة. راجعها للحصول على البصمة الدقيقة وإرشادات اللحام.
لا تتوفر بيانات مفصلة لمخطط التوصيلات لـ H5CG44MEBDX014.
راجع ورقة البيانات للحصول على تكوين الأطراف الكامل.
التطبيقات النموذجية
H5CG44MEBDX014 مناسب لـ 6 التطبيقs: Server Main Memory (RDIMM/LRDIMM), Embedded Computing Modules, Storage Controllers and SSDs, Networking Line Cards, Replacement / BOM Sourcing, High-Performance Client / Workstation Memory.
Server Main Memory (RDIMM/LRDIMM)
The H5CG44MEBDX014's 16Gb 4Gx4 organization is the canonical building block for server registered DIMMs, where chip-kill class ECC protection depends on narrow x4 devices so a multi-bit failure inside one chip remains correctable. At DDR5-4800, eight devices populate one 64-bit sub-channel per JEDEC DDR5 RDIMM topology, delivering 38.4 GB/s peak bandwidth per channel at a 1.1 V core supply. On the module, the component pairs with a register clock driver, SPD hub, and PMIC. Its first-generation M-die maturity means silicon has wide production history, easing vendor qualification for data-center BOMs where supply continuity and long-tail sourcing matter more than leading-edge speed bins.
موصى به
Embedded Computing Modules
Embedded COM Express and SMARC compute modules frequently solder down DDR5 components directly on the carrier board, and the 78-ball FBGA footprint of H5CG44MEBDX014 supports that attach style without sockets. The x4 organization doubles the ECC granularity available to on-SoC memory controllers, valuable in industrial controllers that must run for years without uncorrectable memory errors. At DDR5-4800 the device supports the bandwidth headroom that modern SoCs (for example Intel Altera FPGA SoC platforms pairing with DDR5 controllers) expect, while 1.1 V operation reduces rail power versus DDR4 solutions at similar throughput, easing thermal design in fanless enclosures. Soldered-down memory also removes connector reliability concerns in vibration-prone environments such as transportation and factory automation.
موصى به
Storage Controllers and SSDs
Enterprise SSD controllers use DDR5-class DRAM as metadata and FTL (flash translation layer) working memory, and H5CG44MEBDX014 fits this role with 16 Gb per device and DDR5-4800 bandwidth that keeps mapping-table lookups off the NAND bottleneck. The x4 organization lets controller vendors scale bus width in 4-bit increments, precisely matching controller PHY port counts, and on-die ECC adds a layer of protection for cached metadata. Operation at 1.1 V keeps DRAM power a small fraction of total SSD draw, important for power-capped data-center storage. Because SSD platforms run memory at fixed conservative clocks, the 014 speed bin is typically sufficient, and the M-die's production maturity supports the multi-year lifecycles storage OEMs require.
موصى به
Networking Line Cards
Switch, router, and firewall line cards buffer packets in deep DRAM queues, and H5CG44MEBDX014's DDR5-4800 data rate provides the random-access bandwidth that queue management and deep-packet-inspection engines demand. Narrow x4 devices allow flexible width assembly against network-processor or FPGA memory controllers, and the 78-ball FBGA package supports the dense, soldered-down memory arrays typical of telecom hardware. The 1.1 V rail aligns with the low-voltage power trees of modern NEBS-compliant cards, and first-generation M-die availability across independent distributors simplifies spares provisioning for carrier networks with decade-long service commitments. Thermal design should account for sustained back-to-back refresh plus traffic patterns in 1U airflow-limited cards.
موصى به
Replacement / BOM Sourcing
GlobalSpec and distributor listings position H5CG44MEBDX014 explicitly as a replacement-sourcing component: when an original DDR5 16Gb x4 line item is on allocation or EOL, this M-die part offers a functionally equivalent drop onto the same 78-ball FBGA land pattern within the SK hynix family. Independent distributors such as Pacific Component Xchange and Win Source stock or broker the part for RFQ, making it a practical second source for contract manufacturers maintaining legacy DDR5 builds. When qualifying the substitution, verify the ball map and speed-grade registers against the official datasheet, update SPD or controller configuration if the speed bin differs, and confirm compliance certificates (RoHS/REACH) for regulated shipments. Family parts H5CG46/H5CG48 cover density-width variations of the same platform.
موصى به
High-Performance Client / Workstation Memory
Desktop workstations and mini-PCs with soldered-down DDR5 use 16Gb components such as H5CG44MEBDX014 to reach 8-32 GB capacities with a minimal device count. The x4 organization, while server-oriented, is also used in client LPDDR-adjacent designs where controllers expose x4 PHY ports; at DDR5-4800 it sustains the 38.4 GB/s class bandwidth that integrated GPUs need for shared-memory graphics. The 1.1 V supply suits battery-powered and passively cooled client platforms, and the 78-ball FBGA's roughly square body fits tightly spaced clusters around the SoC. Board designers should follow fly-by CA routing and keep DQ length skew within reference-design tolerances; first-generation M-die cost positioning also benefits price-sensitive client BOMs versus newer die generations.
موصى به
ملخص المنتجات الموصى بها
بيانات مرجعية هندسية لـ H5CG44MEBDX014 — المقارنة وإرشادات التصميم ومعلومات الامتثال.
دليل الاختيار
المقارنة مع البدائل
| المعامل | هذا المنتج | H5CG44MEBDX014N | H5CG46MEBDX015N | H5CG46MEBDX017N | H5CG48MEBDX014N | H5CG48MEBDX018N |
|---|---|---|---|---|---|---|
| Package | 78-ball FBGA | 78-ball FBGA - same | 78-ball FBGA - same | 78-ball FBGA - same | 78-ball FBGA - same | 78-ball FBGA - same |
| Brand | SK Hynix | SK Hynix | SK Hynix | SK Hynix | SK Hynix | SK Hynix |
| Density | 16 Gb | 16 Gb | 16 Gb | 16 Gb | 16 Gb | 16 Gb |
| Organization | 4G x 4 | 4G x 4 | 4G x 4 | 4G x 4 | 2G x 8 | 2G x 8 |
| Data Rate Class | DDR5-4800 | DDR5-4800 | Higher speed bin (suffix 015) | Higher speed bin (suffix 017) | DDR5-4800 | Higher speed bin (suffix 018) |
| Die Generation | 1st-gen M-die | 1st-gen M-die | M-die | M-die | M-die | M-die |
| Core Supply (VDD) | 1.1 V (DDR5 standard) | 1.1 V (DDR5 standard) | 1.1 V (DDR5 standard) | 1.1 V (DDR5 standard) | 1.1 V (DDR5 standard) | 1.1 V (DDR5 standard) |
| Best-Fit Use Case | Server ECC main memory / replacement sourcing | Identical - authorized channel variant | Higher-bandwidth server platforms | High-speed server/client platforms | Cost-optimized client 64-bit buses | Higher-speed client x8 platforms |
أبرز الفروقات
- Chip-kill-ready x4 organization (مقابلH5CG48MEBDX014N)
- Mature first-generation M-die sourcing (مقابلH5CG46AGBDX015 (A-die family))
- Cost-optimized speed bin (مقابلH5CG46MEBDX017N)
ملاحظات التصميم
At DDR5-4800 (2400 MHz clock), DQ eye margins depend heavily on layout. Route each byte lane with matched lengths, maintain a continuous reference plane under DQS/DQ pairs, and avoid stub topologies entirely. Use fly-by routing for command/address/clock to control skew across devices, and set ODT values per the SK hynix datasheet drive/ODT tables. Validate with eye diagrams at both temperature extremes; the device's DFE receivers recover marginal eyes but should not substitute for sound layout. Estimated: a typical server DIMM reference design allocates within +/-25 mil intra-byte-lane skew at this speed.
DDR5 components operate from a nominal 1.1 V core supply; provide tight-tolerance rails with local bulk and high-frequency ceramic decoupling at the FBGA balls. Estimated: at roughly 300-500 mA peak per device under burst traffic (typical class behavior, confirm in datasheet IDD tables), a 16-device RDIMM can transient-load the 1.1 V rail by several amperes, so place bulk capacitance near the PMIC and per-device 0.1 uF ceramics at each VDD ball pair. Follow the SK hynix datasheet IDD/IDDQ tables and module PMIC reference designs for exact budgeting.
Do not substitute x4 and x8 organizations blindly: H5CG44 (x4) and H5CG48 (x8) share the 78-ball FBGA footprint but differ in DQ ball assignments and address maps, so a swap changes controller configuration and possibly the land-pattern net mapping. Speed-grade suffixes (014/015/017/018) also matter - replacing a faster bin with the 014 part requires verifying the controller runs at 4800 MT/s or below and updating SPD or training registers. Always re-run memory training after any component change.
معلومات الامتثال
Compliance data not stated in sourced data. As modern DDR5 SDRAM, RoHS-compliant versions are industry-standard, but official material declarations must be obtained from SK hynix or distributor certificates before regulatory filings.