IAUC28N08S5L230ATMA1 - 80V 28A 23mΩ OptiMOS-5 N-Channel MOSFET | Infineon
MPN: IAUC28N08S5L230ATMA1 ✓ نشطIAUC28N08S5L230ATMA1 نظرة عامة
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal device that switches or amplifies power by varying channel conductivity under an insulated gate. N-channel MOSFETs conduct between drain and source when a positive gate-source voltage is applied; they belong to the discrete semiconductor hierarchy: MOSFET -> FET -> transistor -> discrete semiconductor. Automotive-grade N-channel MOSFETs in the 60-100 V class are the workhorse switches for 12 V and 24 V vehicle electrical subsystems, used in everything from LED drivers and motor control to DC-DC converter power stages and battery management.
Key features include a maximum drain-source voltage V<sub>DS</sub> of 80 V, threshold voltage V<sub>GS(th)</sub> in the 2-3 V range, an avalanche-rated single-pulse body diode, and an operating junction temperature up to 175 °C. The PG-TDSON-8-33 (5x6 mm) package exposes the drain pad to the PCB copper pour, giving a low junction-to-case thermal resistance that is critical for continuous high-current automotive operation. The OptiMOS-5 process achieves a strong figure of merit (R<sub>DS(on)</sub> × Q<sub>g</sub>) that translates to lower switching and conduction loss compared with older MOSFET generations.
Typical applications include 12 V automotive LED lighting drivers, electronic power steering (EPS) and other powertrain actuators, DC-DC converter primary-side switches in 12V/48V mild-hybrid systems, and reverse-polarity / load-dump protection circuits. The 80 V rating gives sufficient headroom above the 24 V jump-start and 35 V load-dump transients required by ISO 7637-2.
When designing with this part, place the gate drive as close to the gate pin as possible to minimize parasitic inductance, and add a gate-source resistor (typ. 10-100 kΩ) to prevent false turn-on from drain dv/dt. Verify SOA at the intended switching frequency and case temperature; the 38 W Tc rating is the datasheet maximum and thermal design margin must be preserved.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
بدائل مباشرة لـ IAUC28N08S5L230ATMA1 — نفس الحزمة، متوافق دبوس بدبوس. تُستثنى القطع ذات الحزم المختلفة التي تتطلب تعديل PCB.
الطرازات في هذه السلسلة
طرازات من نفس السلسلة متوافقة تمامًا مع IAUC28N08S5L230ATMA1 (نفس عامل الشكل والبصمة) — يختلف في Package, Technology, Drain-Source Voltage (VDS), Operating Junction Temperature, Operating Temperature Range.
IAUC100N04S6L014ATMA1
✅ بديل مباشرتواصل لمعرفة السعر
عرض ورقة البيانات ←IAUC41N06S5L100ATMA1
✅ بديل مباشرتواصل لمعرفة السعر
عرض ورقة البيانات ←IAUC60N04S6N031HATMA1
✅ بديل مباشرتواصل لمعرفة السعر
عرض ورقة البيانات ←IAUC120N04S6L012ATMA1
✅ بديل مباشرتواصل لمعرفة السعر
عرض ورقة البيانات ←IAUC100N04S6L025ATMA1
✅ بديل مباشرتواصل لمعرفة السعر
عرض ورقة البيانات ←IAUCN10S7N021ATMA1
✅ بديل مباشرتواصل لمعرفة السعر
عرض ورقة البيانات ←IAUC28N08S5L230ATMA1 الحدود القصوى والخصائص الكهربائية
| Manufacturer | Infineon Technologies |
| Series | OptiMOS-5 |
| FET Type | N-Channel |
| Drain-Source Voltage (V<sub>DS</sub>) | 80 V |
| Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>) | 28 A |
| On-Resistance (R<sub>DS(on)</sub>, V<sub>GS</sub>=10 V) | 23 mΩ (typ) |
| Gate-Source Threshold (V<sub>GS(th)</sub>, typ) | 2.5 V |
| Power Dissipation (P<sub>D</sub>, T<sub>C</sub>) | 38 W |
| درجة حرارة الوصلة التشغيلية | -55 °C to +175 °C |
| العلبة | PG-TDSON-8-33 (5x6 mm SSO8) |
| نوع التركيب | Surface Mount |
| Technology | OptiMOS-5 Power MOSFET |
| Automotive Qualified | Yes (AEC-Q101) |
| حالة RoHS | Compliant |
تكوين أطراف IAUC28N08S5L230ATMA1
| دبوس 1 | Gate — Gate drive input |
| دبوس 2 | Source — Source connection |
| دبوس 3 | Source — Source connection (kelvin) |
| دبوس 4 | Source — Source connection |
| دبوس 5 | Drain — Drain (connected to exposed pad) |
| دبوس 6 | Drain — Drain (connected to exposed pad) |
| دبوس 7 | Drain — Drain (connected to exposed pad) |
| دبوس 8 | Drain — Drain (connected to exposed pad) |
منطقة التشغيل الآمن (TC=25°C)
التطبيقات النموذجية
IAUC28N08S5L230ATMA1 مناسب لـ 6 التطبيقs: 12V/24V Automotive LED Lighting Driver, 12V DC-DC Buck Converter Primary Switch, Electronic Power Steering (EPS) Motor Drive, Reverse-Battery and Load-Dump Protection, Body Control Module (BCM) Load Switch, 48V Mild-Hybrid DC-DC Primary Stage.
12V/24V Automotive LED Lighting Driver
The IAUC28N08S5L230ATMA1's 80V VDS and 23mΩ RDS(on) suit it for high-current LED driver stages in automotive headlamps and daytime running lights. The 80V rating covers 24V jump-start and 35V load-dump transients per ISO 7637-2, eliminating the need for additional TVS clamping. AEC-Q101 qualification and 175°C T_J support under-hood placement; a 10V VGS gate drive and 28A continuous drain handle 15-20A LED string currents typical in matrix-LED headlamps with adequate copper thermal dissipation.
موصى به
12V DC-DC Buck Converter Primary Switch
The IAUC28N08S5L230ATMA1 functions as the primary-side high-side or low-side switch in 12V-input buck converters for automotive infotainment, ADAS, and body-control modules. Its 23mΩ RDS(on) minimizes conduction loss at 10-15A load currents, while the 80V VDS handles automotive transient events without avalanche breakdown. OptiMOS-5 technology delivers low Qg for high-frequency (>400 kHz) switching, shrinking magnetics and improving converter power density.
موصى به
Electronic Power Steering (EPS) Motor Drive
The IAUC28N08S5L230ATMA1 is suitable for EPS motor inverter stages where 12V brushed or 3-phase BLDC motors draw 15-25A peak currents. Its 38W Tc power dissipation and low thermal resistance of the PG-TDSON-8-33 footprint support the high-current pulses during steering assist. AEC-Q101 qualification satisfies OEM automotive reliability requirements, and the 80V rating provides safety margin for motor back-EMF during commutation events.
موصى به
Reverse-Battery and Load-Dump Protection
The IAUC28N08S5L230ATMA1 is placed in series with the 12V battery feed as a load switch and reverse-polarity blocker for automotive ECUs. With 80V VDS, the MOSFET easily absorbs load-dump transients up to 35V per ISO 7637-2 and protects downstream 40V-rated ICs. The 23mΩ RDS(on) keeps continuous dissipation under 5W at 15A load, and AEC-Q101 qualification ensures reliability across -40°C to +125°C ambient automotive conditions.
موصى به
Body Control Module (BCM) Load Switch
The IAUC28N08S5L230ATMA1 acts as a low-side switch in BCM outputs for door locks, window lifters, and seat adjusters, switching 5-15A inductive loads. The 80V VDS and avalanche-rated body diode handle flyback energy from relay and motor coils without external freewheeling diodes in many cases. Low 23mΩ RDS(on) reduces thermal stress in always-on circuits like tail lamps, and AEC-Q101 grade satisfies OEM PPAP requirements.
موصى به
48V Mild-Hybrid DC-DC Primary Stage
The IAUC28N08S5L230ATMA1 is suitable for 48V mild-hybrid buck or boost converter primary switches where the 80V VDS provides 26V margin above the 54V maximum defined by LV148. Its OptiMOS-5 technology enables 300-500 kHz switching frequencies, allowing compact magnetics for the 1-3 kW power levels typical in mild-hybrid DC-DC converters. AEC-Q101 qualification and 175°C T_J are required for under-hood deployment near combustion engines.
موصى به
ملخص المنتجات الموصى بها
بيانات مرجعية هندسية لـ IAUC28N08S5L230ATMA1 — المقارنة وإرشادات التصميم ومعلومات الامتثال.
دليل الاختيار
المقارنة مع البدائل
| المعامل | هذا المنتج | IAUC100N04S6L014ATMA1 | IAUC41N06S5L100ATMA1 | IAUC60N04S6N031HATMA1 | IAUC120N04S6L012ATMA1 | IAUCN10S7N021ATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-TDSON-8-33 (SSO8 5x6) | PG-TDSON-8-33 (SSO8 5x6) | PG-TDSON-8-33 (SSO8 5x6) | PG-TDSON-8-33 (SSO8 5x6) | PG-TDSON-8-33 (SSO8 5x6) | PG-TDSON-8-33 (SSO8 5x6) |
| VDS (max) | 80 V | 40 V | 60 V | 40 V | 40 V | 100 V |
| Technology | OptiMOS-5 | OptiMOS-6 | OptiMOS-5 | OptiMOS-6 | OptiMOS-6 | OptiMOS-7 |
| Automotive Qualified | Yes (AEC-Q101) | Yes (AEC-Q101) | Yes (AEC-Q101) | Yes (AEC-Q101) | Yes (AEC-Q101) | Yes (AEC-Q101) |
أبرز الفروقات
- Highest VDS margin in PG-TDSON-8-33 family (مقابلIAUC41N06S5L100ATMA1)
- Lower RDS(on) than 80V competitors in same footprint (مقابلIAUT300N08S5N011ATMA1)
- OptiMOS-5 generation technology (مقابلIAUC60N04S6N031HATMA1)
ملاحظات التصميم
Estimated: at continuous I_D=20A and R_DS(on)=23 mΩ (T_J=125°C, where R_DS(on) approximately doubles to 46 mΩ), power dissipation is 0.046 × 20² = 18.4 W. With the PG-TDSON-8-33 thermal resistance of about 50 °C/W on a 1 oz 1-square-inch copper pour, junction temperature rise above 25°C ambient would be ~920°C - clearly impossible. Reduce continuous current, increase copper area, or add a top-side heatsink. At I_D=10A, dissipation is 4.6 W and T_J rise is ~230°C, which still requires 2-3 square inches of 2 oz copper.
Place the gate drive resistor (10-100 Ω typical) within 5 mm of the gate pin to suppress parasitic oscillation from the gate-source capacitance and PCB trace inductance. Keep the gate-source loop area under 1 cm² to minimize dv/dt-induced turn-on. Use a 100 kΩ gate-source pull-down resistor to prevent floating-gate turn-on during MCU reset. The drain copper pour must extend at least 100 mm² on the top layer plus thermal vias to inner/outer planes for adequate heat spreading.
Do not exceed V_GS=±20 V absolute maximum - typical gate drive is 10V; add a 12V Zener from gate to source for protection against gate-driver fault conditions. Verify avalanche energy E_AS for unclamped inductive load switching; for solenoid or motor loads, add an external freewheeling diode or TVS clamp. According to Infineon OptiMOS-5 datasheet guidelines, single-pulse avalanche current must be de-rated by junction temperature before system-level reliability calculations.
معلومات الامتثال
AEC-Q101 automotive qualified per Infineon 'IAUC' part numbering. RoHS compliant per Infineon product page. AEC-Q100 in field renamed to AEC-Q101 for discrete semiconductors.
