IAUC28N08S5L230ATMA1 - 80V 28A 23mΩ OptiMOS-5 N-Channel MOSFET | Infineon
Référence : IAUC28N08S5L230ATMA1 ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $1.85 | $1,85 |
| 10 | $1.62 | $16,20 |
| 100 | $1.24 | $124,00 |
| 500 | $0.98 | $490,00 |
| 1 000 | $0.82 | $820,00 |
| 3 000 | $0.71 | $2 130,00 |
IAUC28N08S5L230ATMA1 Présentation
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal device that switches or amplifies power by varying channel conductivity under an insulated gate. N-channel MOSFETs conduct between drain and source when a positive gate-source voltage is applied; they belong to the discrete semiconductor hierarchy: MOSFET -> FET -> transistor -> discrete semiconductor. Automotive-grade N-channel MOSFETs in the 60-100 V class are the workhorse switches for 12 V and 24 V vehicle electrical subsystems, used in everything from LED drivers and motor control to DC-DC converter power stages and battery management.
Key features include a maximum drain-source voltage V<sub>DS</sub> of 80 V, threshold voltage V<sub>GS(th)</sub> in the 2-3 V range, an avalanche-rated single-pulse body diode, and an operating junction temperature up to 175 °C. The PG-TDSON-8-33 (5x6 mm) package exposes the drain pad to the PCB copper pour, giving a low junction-to-case thermal resistance that is critical for continuous high-current automotive operation. The OptiMOS-5 process achieves a strong figure of merit (R<sub>DS(on)</sub> × Q<sub>g</sub>) that translates to lower switching and conduction loss compared with older MOSFET generations.
Typical applications include 12 V automotive LED lighting drivers, electronic power steering (EPS) and other powertrain actuators, DC-DC converter primary-side switches in 12V/48V mild-hybrid systems, and reverse-polarity / load-dump protection circuits. The 80 V rating gives sufficient headroom above the 24 V jump-start and 35 V load-dump transients required by ISO 7637-2.
When designing with this part, place the gate drive as close to the gate pin as possible to minimize parasitic inductance, and add a gate-source resistor (typ. 10-100 kΩ) to prevent false turn-on from drain dv/dt. Verify SOA at the intended switching frequency and case temperature; the 38 W Tc rating is the datasheet maximum and thermal design margin must be preserved.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
Alternatives de remplacement direct pour IAUC28N08S5L230ATMA1 — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec IAUC28N08S5L230ATMA1 (même facteur de forme et même empreinte) — différant par Package, Technology, Drain-Source Voltage (VDS), Operating Junction Temperature, Operating Temperature Range.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
IAUC100N04S6L014ATMA1
✅ Remplacement direct✓ En stock
$0.72 / unité
Voir la fiche technique →IAUC41N06S5L100ATMA1
✅ Remplacement direct✓ En stock
$0.43 / unité
Voir la fiche technique →IAUC60N04S6N031HATMA1
✅ Remplacement direct✓ En stock
$0.95 / unité
Voir la fiche technique →IAUC120N04S6L012ATMA1
✅ Remplacement direct✓ En stock
$1.21 / unité
Voir la fiche technique →IAUC100N04S6L025ATMA1
✅ Remplacement direct✓ En stock
$0.62 / unité
Voir la fiche technique →IAUCN10S7N021ATMA1
✅ Remplacement direct✓ En stock
$2.05 / unité
Voir la fiche technique →IAUC28N08S5L230ATMA1 Valeurs maximales et caractéristiques électriques
| Manufacturer | Infineon Technologies |
| Series | OptiMOS-5 |
| FET Type | N-Channel |
| Drain-Source Voltage (V<sub>DS</sub>) | 80 V |
| Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>) | 28 A |
| On-Resistance (R<sub>DS(on)</sub>, V<sub>GS</sub>=10 V) | 23 mΩ (typ) |
| Gate-Source Threshold (V<sub>GS(th)</sub>, typ) | 2.5 V |
| Power Dissipation (P<sub>D</sub>, T<sub>C</sub>) | 38 W |
| Température de jonction en fonctionnement | -55 °C to +175 °C |
| Boîtier | PG-TDSON-8-33 (5x6 mm SSO8) |
| Type de montage | Surface Mount |
| Technology | OptiMOS-5 Power MOSFET |
| Automotive Qualified | Yes (AEC-Q101) |
| Statut RoHS | Compliant |
Configuration des broches de IAUC28N08S5L230ATMA1
| Broche 1 | Gate — Gate drive input |
| Broche 2 | Source — Source connection |
| Broche 3 | Source — Source connection (kelvin) |
| Broche 4 | Source — Source connection |
| Broche 5 | Drain — Drain (connected to exposed pad) |
| Broche 6 | Drain — Drain (connected to exposed pad) |
| Broche 7 | Drain — Drain (connected to exposed pad) |
| Broche 8 | Drain — Drain (connected to exposed pad) |
Zone de fonctionnement sûr (TC=25°C)
Applications typiques
IAUC28N08S5L230ATMA1 convient pour 6 applications: 12V/24V Automotive LED Lighting Driver, 12V DC-DC Buck Converter Primary Switch, Electronic Power Steering (EPS) Motor Drive, Reverse-Battery and Load-Dump Protection, Body Control Module (BCM) Load Switch, 48V Mild-Hybrid DC-DC Primary Stage.
12V/24V Automotive LED Lighting Driver
The IAUC28N08S5L230ATMA1's 80V VDS and 23mΩ RDS(on) suit it for high-current LED driver stages in automotive headlamps and daytime running lights. The 80V rating covers 24V jump-start and 35V load-dump transients per ISO 7637-2, eliminating the need for additional TVS clamping. AEC-Q101 qualification and 175°C T_J support under-hood placement; a 10V VGS gate drive and 28A continuous drain handle 15-20A LED string currents typical in matrix-LED headlamps with adequate copper thermal dissipation.
Recommandé
12V DC-DC Buck Converter Primary Switch
The IAUC28N08S5L230ATMA1 functions as the primary-side high-side or low-side switch in 12V-input buck converters for automotive infotainment, ADAS, and body-control modules. Its 23mΩ RDS(on) minimizes conduction loss at 10-15A load currents, while the 80V VDS handles automotive transient events without avalanche breakdown. OptiMOS-5 technology delivers low Qg for high-frequency (>400 kHz) switching, shrinking magnetics and improving converter power density.
Recommandé
Electronic Power Steering (EPS) Motor Drive
The IAUC28N08S5L230ATMA1 is suitable for EPS motor inverter stages where 12V brushed or 3-phase BLDC motors draw 15-25A peak currents. Its 38W Tc power dissipation and low thermal resistance of the PG-TDSON-8-33 footprint support the high-current pulses during steering assist. AEC-Q101 qualification satisfies OEM automotive reliability requirements, and the 80V rating provides safety margin for motor back-EMF during commutation events.
Recommandé
Reverse-Battery and Load-Dump Protection
The IAUC28N08S5L230ATMA1 is placed in series with the 12V battery feed as a load switch and reverse-polarity blocker for automotive ECUs. With 80V VDS, the MOSFET easily absorbs load-dump transients up to 35V per ISO 7637-2 and protects downstream 40V-rated ICs. The 23mΩ RDS(on) keeps continuous dissipation under 5W at 15A load, and AEC-Q101 qualification ensures reliability across -40°C to +125°C ambient automotive conditions.
Recommandé
Body Control Module (BCM) Load Switch
The IAUC28N08S5L230ATMA1 acts as a low-side switch in BCM outputs for door locks, window lifters, and seat adjusters, switching 5-15A inductive loads. The 80V VDS and avalanche-rated body diode handle flyback energy from relay and motor coils without external freewheeling diodes in many cases. Low 23mΩ RDS(on) reduces thermal stress in always-on circuits like tail lamps, and AEC-Q101 grade satisfies OEM PPAP requirements.
Recommandé
48V Mild-Hybrid DC-DC Primary Stage
The IAUC28N08S5L230ATMA1 is suitable for 48V mild-hybrid buck or boost converter primary switches where the 80V VDS provides 26V margin above the 54V maximum defined by LV148. Its OptiMOS-5 technology enables 300-500 kHz switching frequencies, allowing compact magnetics for the 1-3 kW power levels typical in mild-hybrid DC-DC converters. AEC-Q101 qualification and 175°C T_J are required for under-hood deployment near combustion engines.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour IAUC28N08S5L230ATMA1 — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | IAUC100N04S6L014ATMA1 | IAUC41N06S5L100ATMA1 | IAUC60N04S6N031HATMA1 | IAUC120N04S6L012ATMA1 | IAUCN10S7N021ATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-TDSON-8-33 (SSO8 5x6) | PG-TDSON-8-33 (SSO8 5x6) | PG-TDSON-8-33 (SSO8 5x6) | PG-TDSON-8-33 (SSO8 5x6) | PG-TDSON-8-33 (SSO8 5x6) | PG-TDSON-8-33 (SSO8 5x6) |
| VDS (max) | 80 V | 40 V | 60 V | 40 V | 40 V | 100 V |
| Technology | OptiMOS-5 | OptiMOS-6 | OptiMOS-5 | OptiMOS-6 | OptiMOS-6 | OptiMOS-7 |
| Automotive Qualified | Yes (AEC-Q101) | Yes (AEC-Q101) | Yes (AEC-Q101) | Yes (AEC-Q101) | Yes (AEC-Q101) | Yes (AEC-Q101) |
Principaux différenciateurs
- Highest VDS margin in PG-TDSON-8-33 family (vs IAUC41N06S5L100ATMA1)
- Lower RDS(on) than 80V competitors in same footprint (vs IAUT300N08S5N011ATMA1)
- OptiMOS-5 generation technology (vs IAUC60N04S6N031HATMA1)
Notes de conception
Estimated: at continuous I_D=20A and R_DS(on)=23 mΩ (T_J=125°C, where R_DS(on) approximately doubles to 46 mΩ), power dissipation is 0.046 × 20² = 18.4 W. With the PG-TDSON-8-33 thermal resistance of about 50 °C/W on a 1 oz 1-square-inch copper pour, junction temperature rise above 25°C ambient would be ~920°C - clearly impossible. Reduce continuous current, increase copper area, or add a top-side heatsink. At I_D=10A, dissipation is 4.6 W and T_J rise is ~230°C, which still requires 2-3 square inches of 2 oz copper.
Place the gate drive resistor (10-100 Ω typical) within 5 mm of the gate pin to suppress parasitic oscillation from the gate-source capacitance and PCB trace inductance. Keep the gate-source loop area under 1 cm² to minimize dv/dt-induced turn-on. Use a 100 kΩ gate-source pull-down resistor to prevent floating-gate turn-on during MCU reset. The drain copper pour must extend at least 100 mm² on the top layer plus thermal vias to inner/outer planes for adequate heat spreading.
Do not exceed V_GS=±20 V absolute maximum - typical gate drive is 10V; add a 12V Zener from gate to source for protection against gate-driver fault conditions. Verify avalanche energy E_AS for unclamped inductive load switching; for solenoid or motor loads, add an external freewheeling diode or TVS clamp. According to Infineon OptiMOS-5 datasheet guidelines, single-pulse avalanche current must be de-rated by junction temperature before system-level reliability calculations.
Informations de conformité
AEC-Q101 automotive qualified per Infineon 'IAUC' part numbering. RoHS compliant per Infineon product page. AEC-Q100 in field renamed to AEC-Q101 for discrete semiconductors.
