IPD30N06S215ATMA2 - 55V 30A N-Ch OptiMOS MOSFET | Infineon
MPN: IPD30N06S215ATMA2 ✓ نشطIPD30N06S215ATMA2 نظرة عامة
What is an N-channel MOSFET? An N-channel MOSFET is a voltage-controlled majority-carrier device whose drain-source channel conducts electrons when a positive gate-source voltage exceeds the threshold. It belongs to the broader discrete semiconductor family: MOSFET -> power MOSFET -> N-channel enhancement-mode MOSFET -> OptiMOS planar technology. Because electrons have higher mobility than holes, N-channel MOSFETs deliver lower on-resistance per unit silicon area than equivalent P-channel parts, making them the default choice for low-side and high-side switching in power conversion.
Key differentiating features include ultra-low RDS(on) at 55 V in planar technology, 100% avalanche-tested ruggedness, MSL1 rating up to 260 C peak reflow, a 175 C maximum operating junction temperature, and a green lead-free PG-TO252-3-11 package. These characteristics position the part as one of the lowest-RDS(on) 55 V planar MOSFETs in its current class, supporting both cold-start and transient-load conditions typical of automotive environments.
The IPD30N06S215ATMA2 is built on Infineon's planar OptiMOS process, which optimises cell pitch and die layout to minimize conduction losses at 55 V breakdown. The device uses standard gate-drive logic-level thresholds, allowing direct PWM control from microcontrollers, gate drivers, or dedicated automotive ECU outputs without intermediate level-shifting.
Typical applications include 12 V/24 V automotive ECU switching, DC-DC converter high-side/low-side switches, motor drive H-bridges, solenoid and relay drivers, and reverse-polarity protection circuits. Industrial use cases include e-bike controllers, power tools, and LED driving stages where AEC-Q101 reliability is desired.
When designing with this part, pay close attention to gate-drive voltage and PCB copper area for thermal dissipation. The DPAK tab functions as the drain terminal and must be soldered to a sufficient copper pour to keep junction temperature within the 175 C maximum. For switching applications above 50 kHz, verify gate-charge losses and reverse-recovery behaviour from the manufacturer datasheet.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the standalone manufacturer datasheet, helping engineers evaluate the IPD30N06S215ATMA2 alongside parametric equivalents for both automotive and industrial switching designs.
بدائل مباشرة لـ IPD30N06S215ATMA2 — نفس الحزمة، متوافق دبوس بدبوس. تُستثنى القطع ذات الحزم المختلفة التي تتطلب تعديل PCB.
الطرازات في هذه السلسلة
طرازات من نفس السلسلة متوافقة تمامًا مع IPD30N06S215ATMA2 (نفس عامل الشكل والبصمة) — يختلف في Package, RoHS Status, Technology, Automotive Qualification, Continuous Drain Current (ID, Tc).
IPD30N06S2-15
✅ بديل مباشر📋 بديل مرجعي (غير موجود في الكتالوج)
IPD90N06S404ATMA2
✅ بديل مباشرتواصل لمعرفة السعر
عرض ورقة البيانات ←IRFR4105TRPBF
✅ بديل مباشرتواصل لمعرفة السعر
عرض ورقة البيانات ←BUK7212-55B,118
✅ بديل مباشر📋 بديل مرجعي (غير موجود في الكتالوج)
BTS441RGATMA1
✅ بديل مباشر ⚠️ مواصفات غير مُتحقق منهاتواصل لمعرفة السعر
عرض ورقة البيانات ←IPD30N06S215ATMA2 الحدود القصوى والخصائص الكهربائية
| Manufacturer | Infineon Technologies |
| Part Family | OptiMOS Power MOSFET |
| نوع الترانزستور | N-Channel Enhancement Mode |
| Drain-Source Voltage (VDS) | 55 V |
| Continuous Drain Current (ID, Tc) | 30 A |
| Power Dissipation (PD, Tc) | 136 W |
| العلبة / الحالة | PG-TO252-3-11 (DPAK) - 3-Pin (2+Tab) |
| نوع التركيب | Surface Mount |
| درجة حرارة التشغيل | -55 C to +175 C (junction) |
| Automotive Qualification | AEC-Q101 qualified |
| مستوى MSL | MSL1 (up to 260 C peak reflow) |
| Avalanche Tested | 100% avalanche tested |
| Lead-Free / RoHS | Green package (lead free), RoHS compliant |
| Gate Threshold Type | Logic-level compatible |
| Packing | Tape & Reel (T/R) |
تكوين أطراف IPD30N06S215ATMA2
| دبوس 1 | Gate — MOSFET gate (logic-level compatible) |
| دبوس 2 | Drain — MOSFET drain (also connected to tab) |
| دبوس 3 | Source — MOSFET source |
منطقة التشغيل الآمن (DC)
التطبيقات النموذجية
IPD30N06S215ATMA2 مناسب لـ 7 التطبيقs: Automotive ECU 12V/24V Switching, DC-DC Converter High-Side/Low-Side Switch, Motor Drive H-Bridge Switch, Solenoid and Relay Driver, Reverse-Polarity Protection, Power Tool and E-Bike Motor Control, LED Driver High-Side Switch.
Automotive ECU 12V/24V Switching
IPD30N06S215ATMA2's 55 V VDS and 30 A continuous drain current directly support 12 V and 24 V automotive ECU switching rails, with substantial headroom for load-dump transients up to 35 V. AEC-Q101 qualification makes it drop-in suitable for body-control modules, gateway ECUs, and BCM outputs that switch lamps, solenoids, and small motors. The DPAK tab doubles as drain and thermal path; soldering it to 1 square inch of 2 oz copper keeps the junction below 175 C at 8-10 A continuous. Its logic-level gate threshold allows direct MCU GPIO drive without an intermediate gate driver.
موصى به
DC-DC Converter High-Side/Low-Side Switch
IPD30N06S215ATMA2's low RDS(on) at 55 V reduces conduction loss in 12 V buck and buck-boost converters used for point-of-load regulation. With 136 W power dissipation and a logic-level gate, the part can be driven directly from synchronous-rectifier controller outputs at switching frequencies up to 100 kHz. The DPAK package fits compact industrial and automotive POL modules; thermal management requires a copper-pour area of at least 1 square inch to sustain 15 A continuous at 25 C ambient. AEC-Q101 qualification suits 24 V truck and 48 V mild-hybrid bus converters.
موصى به
Motor Drive H-Bridge Switch
IPD30N06S215ATMA2's 30 A continuous current and 55 V breakdown fit brushed-DC H-bridge motor drives for automotive seat adjusters, window lifters, wiper motors, and e-bike controllers. Two pairs of these MOSFETs in full-bridge configuration deliver 60 A peak per phase with logic-level gate drive from a half-bridge driver like IRS2004STRPBF or IRS2104STRPBF. The 100% avalanche-tested rating tolerates back-EMF spikes from motor commutation. AEC-Q101 and 175 C junction rating support under-hood mounting where ambient temperatures reach 125 C.
موصى به
Solenoid and Relay Driver
IPD30N06S215ATMA2's 30 A peak current capability and low RDS(on) make it ideal as a low-side switch for automotive solenoids, fuel injectors, and relay coils in 12 V systems. The DPAK package handles inductive kickback when paired with a flyback diode; 100% avalanche testing provides additional ruggedness margin. The logic-level gate allows direct drive from a pre-driver or MCU GPIO with a 10 kohm pull-down to prevent floating-gate turn-on during MCU reset. AEC-Q101 qualification satisfies automotive EMC and reliability requirements.
موصى به
Reverse-Polarity Protection
IPD30N06S215ATMA2 used as a high-side P-channel-style reverse-polarity block (N-channel in low-side return path) protects automotive and industrial loads from mis-wired battery connections up to 55 V. Its 30 A continuous rating covers most 12 V/24 V branch circuits, and the DPAK package dissipates full-load current with adequate copper pour. Logic-level gate drive simplifies the control circuit using a Zener-referenced gate bias. AEC-Q101 ensures long-term reliability in harsh under-hood environments.
موصى به
Power Tool and E-Bike Motor Control
IPD30N06S215ATMA2's 30 A continuous current, 136 W dissipation, and AEC-Q101 grade suit cordless power-tool and e-bike motor controllers where 24 V-36 V battery packs drive brushed-DC or low-power BLDC motors. The DPAK footprint drops onto existing controller PCBs designed for IRFR4105 and similar 55 V DPAK MOSFETs. Logic-level gate compatibility simplifies battery-powered designs that operate from a single 3.3 V or 5 V MCU rail without a charge pump. Operating temperature to 175 C supports sealed, fan-less enclosures.
موصى به
LED Driver High-Side Switch
IPD30N06S215ATMA2 can switch 12 V/24 V automotive LED strings at currents up to 30 A using PWM dimming. Its 55 V breakdown handles inductive transients on long LED harnesses, and the logic-level gate allows direct drive from a microcontroller PWM output. The DPAK package is compact enough for headlamp and DRL modules. AEC-Q101 qualification satisfies automotive lighting reliability requirements, including 1000-hour thermal-cycling tests for under-hood lamp assemblies.
موصى به
ملخص المنتجات الموصى بها
بيانات مرجعية هندسية لـ IPD30N06S215ATMA2 — المقارنة وإرشادات التصميم ومعلومات الامتثال.
دليل الاختيار
المقارنة مع البدائل
| المعامل | هذا المنتج | IPD30N06S2-15 | IPD90N06S404ATMA2 | IRFR4105TRPBF | BUK7212-55B,118 | BTS441RGATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Nexperia | Infineon |
| Package | PG-TO252-3-11 (DPAK) | PG-TO252-3-11 (DPAK) - same | PG-TO252 (DPAK) - same | TO-252 (DPAK) - same | TO-252 (DPAK) - same | PG-TO252-5 (DPAK-5) - 5-pin variant |
| Drain-Source Voltage (VDS) | 55 V | 55 V | 60 V | 55 V | 55 V | 42 V |
| Continuous Drain Current (ID) | 30 A | 30 A | 90 A | 27 A | 54 A pulsed (lower continuous) | 8 A continuous |
| Automotive Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 | Industrial (non-auto) | Industrial (non-auto) | AEC-Q100 |
| Operating Temperature | -55 C to +175 C | -55 C to +175 C | -55 C to +175 C | -55 C to +175 C | -55 C to +175 C | -40 C to +150 C |
| Function | Discrete N-Ch MOSFET | Discrete N-Ch MOSFET | Discrete N-Ch MOSFET | Discrete N-Ch MOSFET | Discrete N-Ch MOSFET | Smart High-Side Switch (not raw MOSFET) |
أبرز الفروقات
- AEC-Q101 automotive qualified at 55 V / 30 A in DPAK (مقابلIRFR4105TRPBF)
- Planar technology with ultra-low RDS(on) at 55 V (مقابلBUK7212-55B,118)
- MSL1 reflow rating for lead-free reflow assembly (مقابلBTS441RGATMA1)
ملاحظات التصميم
Estimated: at 30 A continuous with VDS=55 V max and PD=136 W, the junction-to-ambient thermal resistance of DPAK on 1 square inch of 2 oz copper is approximately 50 C/W. This means full-load continuous current at 25 C ambient is feasible, but at 85 C ambient the practical continuous current drops to about 15 A. Add thermal vias under the tab and use multiple PCB layers connected to a copper pour for sustained high-current operation.
The DPAK tab is internally tied to the drain, so PCB copper beneath the tab serves both as the drain electrical connection and as the primary thermal dissipation path. Use a copper-pour area of at least 1 square inch (645 square mm) on top layer and stitch thermal vias to inner copper planes to keep the junction temperature within rating. Exposed copper also improves solder-joint reliability under thermal cycling.
Do not exceed VDS=55 V even during transient load-dump events on 24 V automotive buses. Add a TVS diode such as a 36 V or 33 V SMBJ part across the drain-source for 24 V systems. Always include a 10 kohm gate-source resistor to keep the gate below threshold during MCU reset; floating-gate turn-on can cause catastrophic cross-conduction in half-bridge configurations.
Keep the gate-drive loop (gate to source return) as small as possible by placing the gate-drive resistor and pull-down immediately adjacent to the gate and source pins. Minimize source inductance to reduce voltage spikes during switching. For high-frequency applications (>50 kHz) use a Kelvin-source connection if available; otherwise ensure the gate-return path is short and direct to the source pin rather than the tab.
معلومات الامتثال
AEC-Q101 (automotive discrete semiconductor) qualified per Infineon datasheet. Lead-free green package. RoHS and REACH compliant. Note: AEC-Q101 not AEC-Q100 - the latter applies to ICs, the former to discrete semiconductors.
