IPD90N06S404ATMA2 - 60V 90A N-Ch OptiMOS MOSFET | Infineon
MPN: IPD90N06S404ATMA2 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.27 | $1.27 |
| 10 | $1.18 | $11.80 |
| 100 | $0.96 | $96.00 |
| 500 | $0.84 | $420.00 |
| 1,000 | $0.72 | $720.00 |
Drop-in alternatives for IPD90N06S404ATMA2 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IPD90N06S4L04ATMA2
✅ Drop-In ⚠️ 参数待验证📋 Reference alternative (not in catalog)
IPD90N06S404ATMA2 Maximum Ratings & Electrical Characteristics
| FET Type | N-Channel, Enhancement Mode |
| Drain-Source Voltage (VDS) | 60 V |
| Continuous Drain Current (ID, Tc) | 90 A |
| Power Dissipation (PD, Tc) | 150 W |
| On-Resistance (RDS(on)) | 3.8 mΩ (typ) at VGS = 10 V |
| Package | PG-TO252-3-11 (DPAK), 3-pin surface mount |
| Operating Temperature (TJ max) | 175 °C |
| Peak Reflow Temperature | 260 °C (MSL1) |
| Avalanche Rating | 100% Avalanche Tested |
| Automotive Qualification | AEC-Q101 |
| Technology | OptiMOS |
| Mounting Type | Surface Mount |
| RoHS Status | Compliant (Green Product) |
| MSL Level | MSL1 |
| Polarity | Single N-Channel |
IPD90N06S404ATMA2 Pin Configuration
| Pin 1 | Gate (G) — Gate control input - drive with 10V to fully enhance the MOSFET |
| Pin 2 | Drain (D) — Drain terminal - connected to the exposed tab; main current path |
| Pin 3 | Source (S) — Source terminal - typically connected to ground in low-side switching applications |
Safe Operating Area (SOA)
Typical Applications
IPD90N06S404ATMA2 is suitable for 6 applications: Automotive 12V H-Bridge Motor Drive, 48V Mild-Hybrid DC-DC Converter, Industrial 24V Brushed DC Motor Control, Automotive ABS Module Solenoid Driver, Battery Management System (BMS) Protection, High-Current OR-ing / Power Mux.
Automotive 12V H-Bridge Motor Drive
The IPD90N06S404ATMA2 is well-suited for automotive 12 V H-bridge motor drive stages used in electronic power steering (EPS), window lifters, and seat adjusters. Its 90 A continuous drain current handles the inrush and stall currents of brushed DC motors, while the 3.8 mΩ RDS(on) keeps conduction losses low during PWM switching at 20-25 kHz. The AEC-Q101 qualification ensures reliability under hood-temperature cycling from -40 °C to +125 °C ambient, and the 175 °C maximum junction temperature provides thermal margin during stall conditions. Designers typically configure two TO-252 devices per H-bridge leg (high-side + low-side) with a dedicated gate driver such as the TLE75080ESHXUMA1 or IRS2302STRPBF to achieve >95% efficiency.
Recommended
48V Mild-Hybrid DC-DC Converter
The IPD90N06S404ATMA2 fits the high-side switch position in 48 V mild-hybrid DC-DC converters that step down to 12 V for legacy automotive loads. Its 60 V VDS rating provides sufficient margin above the 48 V nominal bus (with transient tolerance to 60 V), and the 3.8 mΩ RDS(on) at VGS = 10 V minimizes conduction loss at the 30-50 A typical load levels. The 90 A peak current rating accommodates inrush during cold-crank recovery. AEC-Q101 qualification is mandatory for the 48 V bus environment, which experiences harsher EMI and thermal stress than conventional 12 V systems. A gate driver with >2 A peak sink/source capability (such as 1EDN7511BXUSA1 or EiceDRIVER 2EDL8023GXUMA1) is recommended for fast switching at 100-200 kHz.
Recommended
Industrial 24V Brushed DC Motor Control
Industrial 24 V brushed DC motor control modules - such as those used in conveyor systems, valve actuators, and automated guided vehicles (AGVs) - benefit from the IPD90N06S404ATMA2's 60 V VDS rating (which provides 2.5x margin above 24 V nominal with inductive transients) and 90 A continuous current capability. The 3.8 mΩ RDS(on) keeps the module cool at high duty cycles, and the DPAK package's exposed tab allows direct soldering to a copper heatsink area on the PCB for sustained 50-70 A operation. Although not AEC-Q100 qualified, the industrial-temperature-grade variant with 175 °C TJ max supports factory-floor deployment with ambient temperatures up to 85 °C.
Recommended
Automotive ABS Module Solenoid Driver
Anti-lock braking system (ABS) modules use high-current N-channel MOSFETs to drive hydraulic solenoid valves that modulate brake pressure during emergency stops. The IPD90N06S404ATMA2's 90 A continuous current and 150 W power dissipation handle the 20-40 A peak solenoid currents with margin, while its AEC-Q101 qualification and 175 °C TJ max ensure reliability in the under-hood environment. The 3.8 mΩ RDS(on) reduces thermal stress during the rapid PWM cycling characteristic of ABS pressure modulation. Designers typically use a dedicated gate driver with desaturation detection (such as 1EDI20N12AFXUMA1) to protect the MOSFET against short-to-ground faults in the solenoid wiring harness.
Recommended
Battery Management System (BMS) Protection
In lithium-ion battery management systems (BMS), the IPD90N06S404ATMA2 serves as the low-side protection MOSFET in 12 V/24 V battery packs, disconnecting the load during over-current, short-circuit, or reverse-polarity events. Its 60 V VDS rating exceeds typical 12 V/24 V battery voltages with substantial transient margin, and the 3.8 mΩ RDS(on) minimizes voltage drop across the protection path - critical for accurate fuel gauging and minimal efficiency loss. The 90 A continuous rating supports high-power loads such as inverters and traction motors. AEC-Q101 qualification is essential for automotive 12 V start-stop and 48 V mild-hybrid battery packs.
Recommended
High-Current OR-ing / Power Mux
Redundant power-supply architectures use OR-ing MOSFETs to combine two independent power sources (e.g., main supply and battery backup) while preventing back-feed during fault conditions. The IPD90N06S404ATMA2's 3.8 mΩ RDS(on) keeps conduction losses below 0.5 W at 12 A, and its 60 V VDS rating supports 24 V/48 V OR-ing configurations. The DPAK package's small footprint allows high-density PCB layouts, and the 90 A current rating handles inrush during hot-plug events. An OR-ing controller such as the LTC4359 or LM5050 monitors VDS and rapidly turns off the MOSFET when reverse current is detected.
Recommended
Recommended Products Summary
Engineering reference data for IPD90N06S404ATMA2 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IPB90N06S4L04ATMA2 | IPD90N06S4L04ATMA2 | IPP90N06S4L04ATMA2 | BSC097N06NSATMA1 | IAUC60N06S5L073ATMA1 |
|---|---|---|---|---|---|---|
| Package | DPAK (PG-TO252-3-11) | D2PAK (TO-263) | DPAK (TO-252) - same | TO-220 | SuperSO8 | TDSON-8 |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| VDS (Drain-Source Voltage) | 60 V | 60 V | 60 V | 60 V | 60 V | 60 V |
| Continuous Drain Current (Tc=25C) | 90 A | 90 A | 90 A | 90 A | 44 A | 60 A |
| RDS(on) at VGS=10V | 3.8 mΩ | 3.7 mΩ | 2.5 mΩ | 3.7 mΩ | 9.7 mΩ | 7.3 mΩ |
| AEC-Q101 Qualified | Yes | Yes | Yes | Yes | Yes | Yes |
| Maximum Junction Temperature | 175 °C | 175 °C | 175 °C | 175 °C | 175 °C | 175 °C |
| Technology | OptiMOS | OptiMOS | OptiMOS | OptiMOS | OptiMOS | OptiMOS 5 |
Key Differentiators
- World's lowest RDS(on) at 60V in DPAK per manufacturer claim (vs Standard 60V DPAK MOSFETs)
- AEC-Q101 automotive qualification with 175°C TJ max (vs Industrial-grade MOSFETs without AEC-Q101)
- 100% avalanche-tested ruggedness (vs Standard avalanche-rated MOSFETs)
Design Notes
At 90 A continuous drain current in DPAK package with ~62 °C/W junction-to-ambient thermal resistance (on 1 oz copper, no airflow), the IPD90N06S404ATMA2 dissipates up to ~150 W at TC = 25 °C but only ~3-5 W reliably at TA = 25 °C without additional heatsinking. For sustained operation above 30 A, attach a copper pour of at least 25 × 25 mm or use the exposed tab with thermal vias to an internal PCB plane. At 12 V VIN, switching a 5 V load at 50 A, conduction loss is I² × R = 50² × 0.0038 = 9.5 W, requiring thermal management. Estimated junction temperature: TJ = TA + (PD × θJA) = 25 + (9.5 × 50) = 500 °C exceeds limits - so heatsinking is critical.
Layout the DPAK exposed tab (drain) with a continuous copper pour of at least 50 × 50 mm on top layer, stitched with thermal vias (0.3 mm drill, 1.0 mm pitch, 9-16 vias) to internal ground/power planes. Place the gate drive loop (gate resistor - gate pin - source return) within 5 mm of the package to minimize parasitic inductance (typically <5 nH). For switching frequencies above 50 kHz, use a Kelvin-source connection by separating the power source lead from the gate-drive source return to prevent gate-oscillation caused by source-inductance voltage spikes.
Avoid driving the gate with voltages above ±20 V VGS absolute maximum - even brief transients from gate-driver supply instability can permanently damage the thin gate oxide of this OptiMOS part. Add a 10 kΩ pull-down resistor from gate to source to ensure the MOSFET stays off during power-up or controller reset. Never exceed the 60 V VDS rating, even transiently - inductive load switching without a flyback/clamp diode will generate VDS spikes that can exceed the rating. For solenoid/motor loads, always include a flyback diode or active clamp circuit.
Compliance Information
AEC-Q101 qualified (automotive-grade variant of AEC-Q100). Green Product (RoHS compliant) per Infineon. MSL1 rated per JEDEC J-STD-020.
