IRF7389PBF - 30V N+P HEXFET MOSFET Array SO-8 | Infineon
MPN: IRF7389PBF ✓ نشطIRF7389PBF نظرة عامة
A HEXFET power MOSFET array is a monolithic dual-MOSFET device that integrates a high-side N-channel and a low-side P-channel (or N+P complementary pair) on a single silicon die, optimized for synchronous rectification, half-bridge, and load-switching topologies. Compared with discrete MOSFETs, HEXFET arrays reduce PCB footprint, simplify gate-drive routing, and minimize parasitic loop inductance, while placing them in the broader hierarchy of power MOSFETs -> power transistors -> discrete semiconductors -> semiconductor devices used in switch-mode power supplies (SMPS) and motor drives.
Key features include ultra-low on-resistance (29 mOhm N-ch / 58 mOhm P-ch), Generation V process technology, fully avalanche-rated operation, lead-free and RoHS-compliant construction, and a logic-level compatible gate threshold that simplifies MOSFET driver interfacing. The complementary half-bridge arrangement makes this array a natural fit for synchronous buck converters, Class-D audio output stages, and DC motor H-bridge drivers where one IC replaces two discretes.
Architecturally, the IRF7389PBF uses International Rectifier's proprietary Generation V HEXFET process, a planar N-channel and P-channel stripe-cell layout that optimizes cell density and R_DS(on) per unit area. The process also features an intrinsic body diode with specified reverse-recovery behavior, and the device carries an industry-standard SO-8 pinout that drops into existing surface-mount layouts without modification.
Typical applications include synchronous buck DC-DC converters, Class-D audio amplifiers, battery protection and load-switch circuits, motor-drive H-bridges, and any space-constrained board that benefits from a single-package N+P complementary pair. According to the manufacturer datasheet, the part is qualified for the consumer market and is compatible with existing surface-mount assembly processes.
When designing with this part, calculate the worst-case conduction loss as P = I_DS^2 x R_DS(on) and add switching loss from the gate-charge energy. Both the N-channel and P-channel sections share the same SO-8 thermal pad, so place generous copper pours on pins 1/8 and the die-attach paddle to keep the junction below the 150C maximum rating at full load.
This page synthesizes distributor pricing, drop-in pin-compatible alternatives, and practical design notes not found in the manufacturer datasheet.
بدائل مباشرة لـ IRF7389PBF — نفس الحزمة، متوافق دبوس بدبوس. تُستثنى القطع ذات الحزم المختلفة التي تتطلب تعديل PCB.
الطرازات في هذه السلسلة
طرازات من نفس السلسلة متوافقة تمامًا مع IRF7389PBF (نفس عامل الشكل والبصمة) — يختلف في Technology, Package, Configuration, Avalanche Rated, Drain-Source Voltage (VDS).
IRF7389PBF-1
✅ بديل مباشر📋 بديل مرجعي (غير موجود في الكتالوج)
IRF7341GTRPBF
✅ بديل مباشرتواصل لمعرفة السعر
عرض ورقة البيانات ←IRF7854TRPBF
✅ بديل مباشر✗ غير متوفر
$0.48 / وحدة
عرض ورقة البيانات ←FDS8958A
✅ بديل مباشر📋 بديل مرجعي (غير موجود في الكتالوج)
Si7501DN
✅ بديل مباشر📋 بديل مرجعي (غير موجود في الكتالوج)
AO4606
✅ بديل مباشر📋 بديل مرجعي (غير موجود في الكتالوج)
IRF7389PBF الحدود القصوى والخصائص الكهربائية
| Configuration | N and P-Channel (complementary half-bridge) |
| Drain-to-Source Voltage N-Ch (V_DSS) | 30 V |
| Drain-to-Source Voltage P-Ch (V_DSS) | -30 V |
| Continuous Drain Current N-Ch (I_D) | 7.3 A |
| Continuous Drain Current P-Ch (I_D) | -5.3 A |
| On-Resistance N-Ch R_DS(on) max | 0.029 ohm at V_GS=10V |
| On-Resistance P-Ch R_DS(on) max | 0.058 ohm at V_GS=10V |
| Total Gate Charge N-Ch (Q_g) typical | 22 nC |
| Total Gate Charge P-Ch (Q_g) typical | 23 nC |
| Power Dissipation (P_D) | 2.5 W |
| Technology | Generation V HEXFET |
| العلبة | SO-8 (SOIC-8) surface mount |
| Pinout | Industry-standard complementary SO-8 |
| نوع التركيب | Surface Mount |
| حالة RoHS | Compliant |
| Lead-Free | Yes |
| خالٍ من الهالوجين | Yes |
| Avalanche Rated | Yes (fully avalanche rated) |
تكوين أطراف IRF7389PBF
| دبوس 1 | S1 — N-channel MOSFET source (S1) |
| دبوس 2 | G1 — N-channel MOSFET gate (G1) |
| دبوس 3 | S2 — P-channel MOSFET source (S2) |
| دبوس 4 | G2 — P-channel MOSFET gate (G2) |
| دبوس 5 | D2 — P-channel MOSFET drain (D2, half) |
| دبوس 6 | D2 — P-channel MOSFET drain (D2, half) |
| دبوس 7 | D1 — N-channel MOSFET drain (D1, half) |
| دبوس 8 | D1 — N-channel MOSFET drain (D1, half) |
التطبيقات النموذجية
IRF7389PBF مناسب لـ 6 التطبيقs: Synchronous Buck DC-DC Converter, Class-D Audio Amplifier Output Stage, DC Motor H-Bridge Driver, Battery Protection and Load Switch, LED Driver Buck Topology, USB Power Delivery (PD) Load Switch.
Synchronous Buck DC-DC Converter
The IRF7389PBF is a natural fit for synchronous buck converter high-side and low-side switches in 12V and single-cell Li-ion powered designs. The N-channel section's 30V VDS and 0.029 ohm R_DS(on) at 7.3A keep conduction loss low on the high-side switch, while the P-channel section's -30V and 0.058 ohm R_DS(on) at -5.3A can serve directly as the low-side synchronous rectifier, eliminating the need for a bootstrap circuit and high-side gate driver. This complementary pair reduces external component count, shrinks PCB area, and minimizes the parasitic source inductance that otherwise degrades switching performance. The matched Generation V HEXFET die also gives symmetric rise/fall times, which simplifies dead-time tuning in the PWM controller. Designers should still size the SO-8 copper pour to keep junction temperature below 125C at full 7.3A load.
موصى به
Class-D Audio Amplifier Output Stage
The IRF7389PBF complementary N+P pair suits Class-D audio half-bridge output stages where it switches the speaker load at 250 kHz to 1 MHz PWM frequencies. The 0.029/0.058 ohm R_DS(on) values keep conduction loss below 0.5W per side at 25W into 4 ohm, while the 30V/-30V ratings cover +/-15V and 12V audio rails. The matched HEXFET die gives similar transfer characteristics on both N and P channels, which minimizes the dead-time distortion that otherwise degrades THD performance in Class-D amplifiers. The single SO-8 footprint also simplifies the layout of the output filter and reduces the loop area between the two half-bridge devices. Place a 100nF ceramic bypass on each supply pin and use a star-ground return at the speaker to keep audio noise out of the analog feedback path.
موصى به
DC Motor H-Bridge Driver
The IRF7389PBF's complementary N+P topology directly supports a low-voltage H-bridge for brushed DC motors, solenoid drivers, and small stepper motor windings. With both N and P channels integrated in a single SO-8, a full H-bridge can be built from two IRF7389PBF devices and a small gate-driver such as the IR2109SPBF, driving 12V/24V motors up to the rated 7.3A/-5.3A continuous currents. The 0.029/0.058 ohm R_DS(on) limits conduction loss during the PWM current-regulate phase, and the matched die-to-die timing simplifies shoot-through prevention in the gate-drive logic. The fully avalanche-rated HEXFET process also tolerates the inductive kick from motor windings, simplifying snubber design. Use a low-ESR electrolytic plus 100nF ceramic bulk capacitor on the motor supply to absorb the regenerative braking energy.
موصى به
Battery Protection and Load Switch
The IRF7389PBF works as an integrated reverse-polarity and load-disconnect switch in single-cell Li-ion and 2-3S battery packs. The P-channel section handles load switching on the high-side, requiring only a low-current pull-up to keep the FET on, which simplifies power-path management in always-on battery circuits. The N-channel section can then drive a synchronous OR-ing or cell-balancing path with 0.029 ohm R_DS(on) for low loss. The 30V/-30V rating covers 3S Li-ion (12.6V max) plus transient headroom, and the lead-free, halogen-free SO-8 packaging meets consumer and industrial environmental requirements. The intrinsic body diode also provides a freewheeling path during load-step transients. Confirm SOA at the worst-case inrush of downstream bulk capacitors before final selection.
موصى به
LED Driver Buck Topology
The IRF7389PBF suits low-voltage LED driver buck converters driving 1A to 5A LED strings from 12V or 24V rails. The P-channel high-side switch simplifies the gate-drive path (no bootstrap required), and the matched N+P pair keeps the high-side and low-side conduction losses balanced for higher overall efficiency. The 0.029/0.058 ohm R_DS(on) values keep efficiency above 90 percent in typical 12V-to-LED buck designs, and the SO-8 footprint allows the entire power stage to fit on a compact aluminum-core PCB. PWM dimming is straightforward by driving the gate of the P-channel with a logic-level signal, and the fully avalanche-rated HEXFET process tolerates the inductive ringing of the buck inductor at each switching edge. Provide at least 50 mm^2 of copper on the SO-8 thermal pad for continuous 5A operation.
موصى به
USB Power Delivery (PD) Load Switch
The IRF7389PBF can act as a load switch in USB Type-C power-delivery paths where 5V, 9V, 15V, or 20V rails must be hot-plugged with controlled inrush. The N-channel section serves as the low-side eFET/load switch with 0.029 ohm R_DS(on) to minimize voltage drop at 5A load, while the P-channel section provides a back-to-back reverse-current blocking path on the high side. The 30V/-30V VDS rating covers 20V USB PD plus margin, and the matched N+P transfer characteristics simplify gate-drive timing when both sections are switched in tandem. The fully avalanche-rated HEXFET process also absorbs the inductive kick from upstream cable inductance. Place a TVS diode such as a 26V SMBJ on the supply side and a 10uF ceramic bypass at the output to absorb hot-plug transients.
موصى به
ملخص المنتجات الموصى بها
بيانات مرجعية هندسية لـ IRF7389PBF — المقارنة وإرشادات التصميم ومعلومات الامتثال.
دليل الاختيار
المقارنة مع البدائل
| المعامل | هذا المنتج | IRF7389PBF-1 | IRF7341GTRPBF | IRF7854TRPBF | FDS8958A | Si7501DN | AO4606 |
|---|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | onsemi | Vishay Intertechnology | Alpha & Omega Semiconductor |
| Package | SO-8 (SOIC-8) | SO-8 (SOIC-8) - same | SO-8 (SOIC-8) - same | SO-8 (SOIC-8) - same | SO-8 (SOIC-8) - same | SO-8 (PowerPAK 1212-equivalent) - same footprint | SO-8 (SOIC-8) - same |
| N-Channel VDS (max) | 30 V | 30 V | 55 V | 75 V | 30 V | 30 V | 30 V |
| P-Channel VDS (max) | -30 V | -30 V | -55 V | -75 V | -30 V | -30 V | -30 V |
| N-Ch Continuous Drain Current | 7.3 A | 7.3 A | 5.1 A | 3.4 A | 7.0 A | 5.4 A | 7.6 A |
| P-Ch Continuous Drain Current | -5.3 A | -5.3 A | -4.3 A | -2.7 A | -5.0 A | -3.5 A | -5.3 A |
| N-Ch R_DS(on) max at VGS=10V | 0.029 ohm | 0.029 ohm | 0.050 ohm | 0.092 ohm | 0.026 ohm | 0.040 ohm | 0.030 ohm |
| P-Ch R_DS(on) max at VGS=10V | 0.058 ohm | 0.058 ohm | 0.100 ohm | 0.250 ohm | 0.055 ohm | 0.090 ohm | 0.060 ohm |
| RoHS / Lead-Free | Yes / Yes | Yes / Yes | Yes / Yes | Yes / Yes | Yes / Yes | Yes / Yes | Yes / Yes |
أبرز الفروقات
- Industry-standard complementary SO-8 pinout with Generation V HEXFET die (مقابلSi7501DN (Vishay))
- Higher continuous drain current in the same SO-8 footprint (مقابلFDS8958A (onsemi))
- Single-package N+P complementary pair reduces PCB area and gate-drive complexity (مقابلDiscrete N-channel IRF1018EPBF + P-channel IRF4905LPBF)
ملاحظات التصميم
The IRF7389PBF has a P_D rating of 2.5W on the SO-8 thermal pad, but the practical continuous current is limited by R_thetaJA of approximately 50 C/W on a 1 oz copper SO-8 footprint. Estimated: at full 7.3A load with R_DS(on)=0.029 ohm, conduction loss is ~1.55W, which yields a junction temperature rise of ~77C above ambient. Derate to 4-5A in designs with no bottom-side thermal pad, and place at least 100 mm^2 of copper pour on pins 1/8 and on the opposite board side to keep Tj below 125C.
Route the gate traces for G1 (pin 2) and G2 (pin 4) as short as possible and place a 10 ohm to 100 ohm gate-source resistor on each gate to suppress parasitic oscillation. Keep the high-side and low-side drain loops tight, with the input bulk capacitor within 5 mm of pins 5/6 and 7/8, to minimize the switching-node overshoot and ringing. The matched N+P HEXFET die gives symmetric transfer characteristics, so a single 10k resistor pull-up on the P-channel gate and 10k pull-down on the N-channel gate prevents accidental turn-on during power-up.
Do not exceed the absolute maximum V_GS of +/-20V on either the N or P channel, even briefly. The IRF7389PBF is rated for V_GS=10V in the datasheet R_DS(on) specification, but a logic-level V_GS=4.5V is also supported for low-voltage gate drive. Do not parallel the two halves of the same channel (D1+D1 or D2+D2) with the other half-bond-wire to a different node - pins 5+6 and 7+8 are split for current sharing, not for separate circuit nodes. Finally, the SO-8 part is moisture-sensitive (MSL 2) and requires dry-pack storage and reflow within 1 year once the bag is opened.
Use a 4-layer PCB with a dedicated ground plane directly under the IRF7389PBF to provide a low-inductance return path for the high-di/dt switching current. Place at least two 10uF X7R ceramic capacitors (plus a 100nF X7R) within 3 mm of the SO-8 power pins, and use 1 oz copper pours on both top and bottom layers stitched together with 0.3 mm thermal vias in a 1 mm grid. The matched N+P HEXFET die keeps the thermal pad balanced, so one continuous copper pour serves both halves without hot spots.
معلومات الامتثال
RoHS compliant and lead-free per Infineon product page. Qualified for the consumer market per the datasheet introduction. Not AEC-Q100 qualified - choose an automotive-grade part such as IRF7389PBF-1 (when available as automotive grade) or the AUIRF7640S2TR for AEC-Q100 designs.
