IRF7389PBF - 30V N+P HEXFET MOSFET Array SO-8 | Infineon
MPN: IRF7389PBF β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.42 | $1.42 |
| 10 | $1.18 | $11.80 |
| 100 | $0.92 | $92.00 |
| 500 | $0.74 | $370.00 |
| 1,000 | $0.61 | $610.00 |
IRF7389PBF Overview
A HEXFET power MOSFET array is a monolithic dual-MOSFET device that integrates a high-side N-channel and a low-side P-channel (or N+P complementary pair) on a single silicon die, optimized for synchronous rectification, half-bridge, and load-switching topologies. Compared with discrete MOSFETs, HEXFET arrays reduce PCB footprint, simplify gate-drive routing, and minimize parasitic loop inductance, while placing them in the broader hierarchy of power MOSFETs -> power transistors -> discrete semiconductors -> semiconductor devices used in switch-mode power supplies (SMPS) and motor drives.
Key features include ultra-low on-resistance (29 mOhm N-ch / 58 mOhm P-ch), Generation V process technology, fully avalanche-rated operation, lead-free and RoHS-compliant construction, and a logic-level compatible gate threshold that simplifies MOSFET driver interfacing. The complementary half-bridge arrangement makes this array a natural fit for synchronous buck converters, Class-D audio output stages, and DC motor H-bridge drivers where one IC replaces two discretes.
Architecturally, the IRF7389PBF uses International Rectifier's proprietary Generation V HEXFET process, a planar N-channel and P-channel stripe-cell layout that optimizes cell density and R_DS(on) per unit area. The process also features an intrinsic body diode with specified reverse-recovery behavior, and the device carries an industry-standard SO-8 pinout that drops into existing surface-mount layouts without modification.
Typical applications include synchronous buck DC-DC converters, Class-D audio amplifiers, battery protection and load-switch circuits, motor-drive H-bridges, and any space-constrained board that benefits from a single-package N+P complementary pair. According to the manufacturer datasheet, the part is qualified for the consumer market and is compatible with existing surface-mount assembly processes.
When designing with this part, calculate the worst-case conduction loss as P = I_DS^2 x R_DS(on) and add switching loss from the gate-charge energy. Both the N-channel and P-channel sections share the same SO-8 thermal pad, so place generous copper pours on pins 1/8 and the die-attach paddle to keep the junction below the 150C maximum rating at full load.
This page synthesizes distributor pricing, drop-in pin-compatible alternatives, and practical design notes not found in the manufacturer datasheet.
Drop-in alternatives for IRF7389PBF β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IRF7389PBF (same form factor and footprint) β differing in Technology, Package, Configuration, Avalanche Rated, Drain-Source Voltage (VDS).
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
IRF7389PBF-1
β Drop-Inπ Reference alternative (not in catalog)
IRF7341GTRPBF
β Drop-Inβ In Stock
$0.76 / Unit
View Datasheet βIRF7854TRPBF
β Drop-Inβ In Stock
$0.48 / Unit
View Datasheet βFDS8958A
β Drop-Inπ Reference alternative (not in catalog)
Si7501DN
β Drop-Inπ Reference alternative (not in catalog)
AO4606
β Drop-Inπ Reference alternative (not in catalog)
IRF7389PBF Maximum Ratings & Electrical Characteristics
| Configuration | N and P-Channel (complementary half-bridge) |
| Drain-to-Source Voltage N-Ch (V_DSS) | 30 V |
| Drain-to-Source Voltage P-Ch (V_DSS) | -30 V |
| Continuous Drain Current N-Ch (I_D) | 7.3 A |
| Continuous Drain Current P-Ch (I_D) | -5.3 A |
| On-Resistance N-Ch R_DS(on) max | 0.029 ohm at V_GS=10V |
| On-Resistance P-Ch R_DS(on) max | 0.058 ohm at V_GS=10V |
| Total Gate Charge N-Ch (Q_g) typical | 22 nC |
| Total Gate Charge P-Ch (Q_g) typical | 23 nC |
| Power Dissipation (P_D) | 2.5 W |
| Technology | Generation V HEXFET |
| Package | SO-8 (SOIC-8) surface mount |
| Pinout | Industry-standard complementary SO-8 |
| Mounting Type | Surface Mount |
| RoHS Status | Compliant |
| Lead-Free | Yes |
| Halogen-Free | Yes |
| Avalanche Rated | Yes (fully avalanche rated) |
IRF7389PBF Pin Configuration
| Pin 1 | S1 β N-channel MOSFET source (S1) |
| Pin 2 | G1 β N-channel MOSFET gate (G1) |
| Pin 3 | S2 β P-channel MOSFET source (S2) |
| Pin 4 | G2 β P-channel MOSFET gate (G2) |
| Pin 5 | D2 β P-channel MOSFET drain (D2, half) |
| Pin 6 | D2 β P-channel MOSFET drain (D2, half) |
| Pin 7 | D1 β N-channel MOSFET drain (D1, half) |
| Pin 8 | D1 β N-channel MOSFET drain (D1, half) |
Typical Applications
IRF7389PBF is suitable for 6 applications: Synchronous Buck DC-DC Converter, Class-D Audio Amplifier Output Stage, DC Motor H-Bridge Driver, Battery Protection and Load Switch, LED Driver Buck Topology, USB Power Delivery (PD) Load Switch.
Synchronous Buck DC-DC Converter
The IRF7389PBF is a natural fit for synchronous buck converter high-side and low-side switches in 12V and single-cell Li-ion powered designs. The N-channel section's 30V VDS and 0.029 ohm R_DS(on) at 7.3A keep conduction loss low on the high-side switch, while the P-channel section's -30V and 0.058 ohm R_DS(on) at -5.3A can serve directly as the low-side synchronous rectifier, eliminating the need for a bootstrap circuit and high-side gate driver. This complementary pair reduces external component count, shrinks PCB area, and minimizes the parasitic source inductance that otherwise degrades switching performance. The matched Generation V HEXFET die also gives symmetric rise/fall times, which simplifies dead-time tuning in the PWM controller. Designers should still size the SO-8 copper pour to keep junction temperature below 125C at full 7.3A load.
Recommended
Class-D Audio Amplifier Output Stage
The IRF7389PBF complementary N+P pair suits Class-D audio half-bridge output stages where it switches the speaker load at 250 kHz to 1 MHz PWM frequencies. The 0.029/0.058 ohm R_DS(on) values keep conduction loss below 0.5W per side at 25W into 4 ohm, while the 30V/-30V ratings cover +/-15V and 12V audio rails. The matched HEXFET die gives similar transfer characteristics on both N and P channels, which minimizes the dead-time distortion that otherwise degrades THD performance in Class-D amplifiers. The single SO-8 footprint also simplifies the layout of the output filter and reduces the loop area between the two half-bridge devices. Place a 100nF ceramic bypass on each supply pin and use a star-ground return at the speaker to keep audio noise out of the analog feedback path.
Recommended
DC Motor H-Bridge Driver
The IRF7389PBF's complementary N+P topology directly supports a low-voltage H-bridge for brushed DC motors, solenoid drivers, and small stepper motor windings. With both N and P channels integrated in a single SO-8, a full H-bridge can be built from two IRF7389PBF devices and a small gate-driver such as the IR2109SPBF, driving 12V/24V motors up to the rated 7.3A/-5.3A continuous currents. The 0.029/0.058 ohm R_DS(on) limits conduction loss during the PWM current-regulate phase, and the matched die-to-die timing simplifies shoot-through prevention in the gate-drive logic. The fully avalanche-rated HEXFET process also tolerates the inductive kick from motor windings, simplifying snubber design. Use a low-ESR electrolytic plus 100nF ceramic bulk capacitor on the motor supply to absorb the regenerative braking energy.
Recommended
Battery Protection and Load Switch
The IRF7389PBF works as an integrated reverse-polarity and load-disconnect switch in single-cell Li-ion and 2-3S battery packs. The P-channel section handles load switching on the high-side, requiring only a low-current pull-up to keep the FET on, which simplifies power-path management in always-on battery circuits. The N-channel section can then drive a synchronous OR-ing or cell-balancing path with 0.029 ohm R_DS(on) for low loss. The 30V/-30V rating covers 3S Li-ion (12.6V max) plus transient headroom, and the lead-free, halogen-free SO-8 packaging meets consumer and industrial environmental requirements. The intrinsic body diode also provides a freewheeling path during load-step transients. Confirm SOA at the worst-case inrush of downstream bulk capacitors before final selection.
Recommended
LED Driver Buck Topology
The IRF7389PBF suits low-voltage LED driver buck converters driving 1A to 5A LED strings from 12V or 24V rails. The P-channel high-side switch simplifies the gate-drive path (no bootstrap required), and the matched N+P pair keeps the high-side and low-side conduction losses balanced for higher overall efficiency. The 0.029/0.058 ohm R_DS(on) values keep efficiency above 90 percent in typical 12V-to-LED buck designs, and the SO-8 footprint allows the entire power stage to fit on a compact aluminum-core PCB. PWM dimming is straightforward by driving the gate of the P-channel with a logic-level signal, and the fully avalanche-rated HEXFET process tolerates the inductive ringing of the buck inductor at each switching edge. Provide at least 50 mm^2 of copper on the SO-8 thermal pad for continuous 5A operation.
Recommended
USB Power Delivery (PD) Load Switch
The IRF7389PBF can act as a load switch in USB Type-C power-delivery paths where 5V, 9V, 15V, or 20V rails must be hot-plugged with controlled inrush. The N-channel section serves as the low-side eFET/load switch with 0.029 ohm R_DS(on) to minimize voltage drop at 5A load, while the P-channel section provides a back-to-back reverse-current blocking path on the high side. The 30V/-30V VDS rating covers 20V USB PD plus margin, and the matched N+P transfer characteristics simplify gate-drive timing when both sections are switched in tandem. The fully avalanche-rated HEXFET process also absorbs the inductive kick from upstream cable inductance. Place a TVS diode such as a 26V SMBJ on the supply side and a 10uF ceramic bypass at the output to absorb hot-plug transients.
Recommended
Recommended Products Summary
Engineering reference data for IRF7389PBF β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IRF7389PBF-1 | IRF7341GTRPBF | IRF7854TRPBF | FDS8958A | Si7501DN | AO4606 |
|---|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | onsemi | Vishay Intertechnology | Alpha & Omega Semiconductor |
| Package | SO-8 (SOIC-8) | SO-8 (SOIC-8) - same | SO-8 (SOIC-8) - same | SO-8 (SOIC-8) - same | SO-8 (SOIC-8) - same | SO-8 (PowerPAK 1212-equivalent) - same footprint | SO-8 (SOIC-8) - same |
| N-Channel VDS (max) | 30 V | 30 V | 55 V | 75 V | 30 V | 30 V | 30 V |
| P-Channel VDS (max) | -30 V | -30 V | -55 V | -75 V | -30 V | -30 V | -30 V |
| N-Ch Continuous Drain Current | 7.3 A | 7.3 A | 5.1 A | 3.4 A | 7.0 A | 5.4 A | 7.6 A |
| P-Ch Continuous Drain Current | -5.3 A | -5.3 A | -4.3 A | -2.7 A | -5.0 A | -3.5 A | -5.3 A |
| N-Ch R_DS(on) max at VGS=10V | 0.029 ohm | 0.029 ohm | 0.050 ohm | 0.092 ohm | 0.026 ohm | 0.040 ohm | 0.030 ohm |
| P-Ch R_DS(on) max at VGS=10V | 0.058 ohm | 0.058 ohm | 0.100 ohm | 0.250 ohm | 0.055 ohm | 0.090 ohm | 0.060 ohm |
| RoHS / Lead-Free | Yes / Yes | Yes / Yes | Yes / Yes | Yes / Yes | Yes / Yes | Yes / Yes | Yes / Yes |
Key Differentiators
- Industry-standard complementary SO-8 pinout with Generation V HEXFET die (vs Si7501DN (Vishay))
- Higher continuous drain current in the same SO-8 footprint (vs FDS8958A (onsemi))
- Single-package N+P complementary pair reduces PCB area and gate-drive complexity (vs Discrete N-channel IRF1018EPBF + P-channel IRF4905LPBF)
Design Notes
The IRF7389PBF has a P_D rating of 2.5W on the SO-8 thermal pad, but the practical continuous current is limited by R_thetaJA of approximately 50 C/W on a 1 oz copper SO-8 footprint. Estimated: at full 7.3A load with R_DS(on)=0.029 ohm, conduction loss is ~1.55W, which yields a junction temperature rise of ~77C above ambient. Derate to 4-5A in designs with no bottom-side thermal pad, and place at least 100 mm^2 of copper pour on pins 1/8 and on the opposite board side to keep Tj below 125C.
Route the gate traces for G1 (pin 2) and G2 (pin 4) as short as possible and place a 10 ohm to 100 ohm gate-source resistor on each gate to suppress parasitic oscillation. Keep the high-side and low-side drain loops tight, with the input bulk capacitor within 5 mm of pins 5/6 and 7/8, to minimize the switching-node overshoot and ringing. The matched N+P HEXFET die gives symmetric transfer characteristics, so a single 10k resistor pull-up on the P-channel gate and 10k pull-down on the N-channel gate prevents accidental turn-on during power-up.
Do not exceed the absolute maximum V_GS of +/-20V on either the N or P channel, even briefly. The IRF7389PBF is rated for V_GS=10V in the datasheet R_DS(on) specification, but a logic-level V_GS=4.5V is also supported for low-voltage gate drive. Do not parallel the two halves of the same channel (D1+D1 or D2+D2) with the other half-bond-wire to a different node - pins 5+6 and 7+8 are split for current sharing, not for separate circuit nodes. Finally, the SO-8 part is moisture-sensitive (MSL 2) and requires dry-pack storage and reflow within 1 year once the bag is opened.
Use a 4-layer PCB with a dedicated ground plane directly under the IRF7389PBF to provide a low-inductance return path for the high-di/dt switching current. Place at least two 10uF X7R ceramic capacitors (plus a 100nF X7R) within 3 mm of the SO-8 power pins, and use 1 oz copper pours on both top and bottom layers stitched together with 0.3 mm thermal vias in a 1 mm grid. The matched N+P HEXFET die keeps the thermal pad balanced, so one continuous copper pour serves both halves without hot spots.
Compliance Information
RoHS compliant and lead-free per Infineon product page. Qualified for the consumer market per the datasheet introduction. Not AEC-Q100 qualified - choose an automotive-grade part such as IRF7389PBF-1 (when available as automotive grade) or the AUIRF7640S2TR for AEC-Q100 designs.
