K6T1008C2E-GB70 - 128Kx8 SRAM, 70ns, 5V CMOS | Samsung
MPN: K6T1008C2E-GB70 ✗ انتهى عمره الإنتاجيK6T1008C2E-GB70 نظرة عامة
An SRAM (Static Random-Access Memory) is a type of volatile semiconductor memory that stores each bit in a bistable latch, retaining data as long as power is applied without any refresh cycles. SRAMs are positioned in the memory hierarchy between high-density DRAM (which requires refresh) and fast register files (which are too small for general storage). Within the broader taxonomy, SRAM is a member of the volatile memory IC family, which in turn belongs to memory and storage semiconductors. The K6T1008C2E is part of Samsung's legacy K6T family of asynchronous SRAMs, which has been widely second-sourced and is considered an industry-standard pinout.
Key features of the K6T1008C2E-GB70 include fully static operation requiring no clock or refresh, three-state common I/O, TTL-compatible inputs and outputs, and a single Chip Enable (CE) pin plus Output Enable (OE) for bus control. The 70 ns access time (tAA) makes it suitable for moderate-speed microcontroller and embedded processor bus interfaces. The SOP-32 surface-mount package provides a low-profile footprint compatible with standard 32-SOIC land patterns, simplifying PCB layout. The device is offered in commercial (C) and industrial (I) temperature grades, with the -GB suffix denoting SOP-32 package, lead-free, and 70 ns speed bin.
Typical applications include industrial controllers, firmware boot memory, embedded data logging, computing modules, and replacement sourcing for obsolete systems. The wide 5 V supply range and TTL compatibility make it ideal for legacy 5 V microcontrollers and 8/16-bit processor buses where modern synchronous SRAMs are not required. The asynchronous interface simplifies the memory controller design, eliminating the need for clock-aligned control logic.
When designing with this part, verify the tAA timing budget against the host processor's memory cycle time. At 70 ns access time, the part is best suited for host buses running at 14 MHz or lower. For higher performance buses, consider a 55 ns variant or move to a synchronous SRAM. Decoupling with a 0.1 µF ceramic capacitor placed within 5 mm of the VCC pin is recommended for stable operation.
بدائل مباشرة لـ K6T1008C2E-GB70 — نفس الحزمة، متوافق دبوس بدبوس. تُستثنى القطع ذات الحزم المختلفة التي تتطلب تعديل PCB.
K6T1008C2E-GB55
✅ بديل مباشر ⚠️ مواصفات غير مُتحقق منها📋 بديل مرجعي (غير موجود في الكتالوج)
K6T1008C2E-DB70
✅ بديل مباشر ⚠️ مواصفات غير مُتحقق منها📋 بديل مرجعي (غير موجود في الكتالوج)
AS6C1008-70PCN
✅ بديل مباشر📋 بديل مرجعي (غير موجود في الكتالوج)
CY7C109-30VC
✅ بديل مباشر📋 بديل مرجعي (غير موجود في الكتالوج)
IS62C1024-70V
✅ بديل مباشر📋 بديل مرجعي (غير موجود في الكتالوج)
K6T1008C2E-GB70 الحدود القصوى والخصائص الكهربائية
| نوع الذاكرة | Asynchronous SRAM (Static RAM) |
| Memory Organization | 128K x 8 bit |
| Memory Density | 1 Mbit |
| Access Time (tAA) | 70 ns |
| Supply Voltage (VCC) | 4.5 V to 5.5 V |
| Operating Current (ICC) | 50 mA (typical) |
| درجة حرارة التشغيل | Commercial (C) and Industrial (I) grades |
| العلبة | 32-pin SOP (SOP-32) |
| نوع التركيب | Surface Mount |
| الواجهة | Asynchronous parallel |
| Cell Technology | 6T CMOS |
| I/O Compatibility | TTL-compatible |
| Refresh Requirement | None (fully static) |
| Output Enable (OE) | Yes |
| Chip Enable (CE) | Yes (active low) |
| Lead-Free | Yes (per -GB suffix) |
تكوين أطراف K6T1008C2E-GB70
| دبوس 1 | A14 — Address input A14 |
| دبوس 2 | A12 — Address input A12 |
| دبوس 3 | A7 — Address input A7 |
| دبوس 4 | A6 — Address input A6 |
| دبوس 5 | A5 — Address input A5 |
| دبوس 6 | A4 — Address input A4 |
| دبوس 7 | A3 — Address input A3 |
| دبوس 8 | A2 — Address input A2 |
| دبوس 9 | A1 — Address input A1 |
| دبوس 10 | A0 — Address input A0 |
| دبوس 11 | I/O0 — Data input/output 0 |
| دبوس 12 | I/O1 — Data input/output 1 |
| دبوس 13 | I/O2 — Data input/output 2 |
| دبوس 14 | GND — Ground |
| دبوس 15 | I/O3 — Data input/output 3 |
| دبوس 16 | I/O4 — Data input/output 4 |
| دبوس 17 | I/O5 — Data input/output 5 |
| دبوس 18 | I/O6 — Data input/output 6 |
| دبوس 19 | I/O7 — Data input/output 7 |
| دبوس 20 | CE — Chip Enable (active low) |
| دبوس 21 | A10 — Address input A10 |
| دبوس 22 | OE — Output Enable (active low) |
| دبوس 23 | A11 — Address input A11 |
| دبوس 24 | A9 — Address input A9 |
| دبوس 25 | A8 — Address input A8 |
| دبوس 26 | A13 — Address input A13 |
| دبوس 27 | WE — Write Enable (active low) |
| دبوس 28 | VCC — Power supply (4.5 V to 5.5 V) |
| دبوس 29 | NC — Not connected (per JEDEC 32-SOIC pinout) |
| دبوس 30 | NC — Not connected (per JEDEC 32-SOIC pinout) |
| دبوس 31 | NC — Not connected (per JEDEC 32-SOIC pinout) |
| دبوس 32 | NC — Not connected (per JEDEC 32-SOIC pinout) |
التطبيقات النموذجية
K6T1008C2E-GB70 مناسب لـ 6 التطبيقs: Firmware Boot Memory, Embedded Data Logging Buffer, Industrial Controller Scratchpad Memory, Legacy Computing Module Replacement, Point-of-Sale Terminal Memory, Test & Measurement Instrument Buffer.
Firmware Boot Memory
The K6T1008C2E-GB70 is well suited as firmware boot memory for legacy 8/16-bit microcontroller systems. Its 128Kx8 organization provides 128 KB of non-volatile-equivalent storage for boot loaders and BIOS code. The 70 ns access time aligns with sub-15 MHz host bus speeds, and the asynchronous SRAM interface with Chip Enable (CE) and Output Enable (OE) eliminates the need for a refresh controller or clock-aligned logic. Recommended companion: a 5 V-tolerant MCU host such as legacy 8051 or H8/300H families, paired with 0.1 µF decoupling within 5 mm of the VCC pin.
موصى به
Embedded Data Logging Buffer
The K6T1008C2E-GB70 provides 128 KB of high-speed SRAM buffer memory for embedded data logging applications. Its 5 V CMOS design delivers low standby current, making it suitable for battery-backed systems where data integrity is critical between write cycles. The fully static 6T cell eliminates refresh overhead, simplifying the host firmware. At 70 ns access time, the part comfortably handles data streams from UART, SPI, or parallel sensor front-ends in industrial instrumentation. Recommended companion: a battery-backup supervisor or RTC for non-volatile-like behavior.
موصى به
Industrial Controller Scratchpad Memory
The K6T1008C2E-GB70 is widely deployed as scratchpad RAM in industrial PLC and motor control boards. Its 5 V tolerance and TTL-compatible I/O interface directly to legacy 5 V microcontrollers without level shifters, simplifying PCB layout in harsh industrial environments. The SOP-32 surface-mount package provides mechanical robustness and standard 32-SOIC land patterns, enabling drop-in second sourcing. At 70 ns access time, the part serves as a fast intermediate buffer between the controller and slower peripheral interfaces such as opto-isolated I/O modules.
موصى به
Legacy Computing Module Replacement
The K6T1008C2E-GB70 is a standard replacement source for discontinued 128Kx8 SRAM sockets in legacy computing modules. Its JEDEC-standard 32-SOIC pinout is shared by analog semiconductor makers including Alliance Memory, ISSI, and Cypress/Infineon, making it the de facto industry-standard 128Kx8 asynchronous SRAM footprint. The 5 V supply and 70 ns access time match the bus timing of legacy x86 and 68k SBC designs. Recommended companion: a supply voltage supervisor and decoupling network per Samsung's typical application circuit.
موصى به
Point-of-Sale Terminal Memory
The K6T1008C2E-GB70 provides reliable working memory for point-of-sale terminals that require 5 V tolerance and moderate access times. Its asynchronous SRAM interface simplifies the memory controller design, eliminating the need for clock-aligned logic in cost-sensitive POS hardware. The 50 mA typical operating current is acceptable for line-powered terminals, and the SOP-32 footprint allows compact board layout. Recommended companion: a battery-backed RTC and EEPROM for transaction logging persistence.
موصى به
Test & Measurement Instrument Buffer
The K6T1008C2E-GB70 serves as a high-speed capture buffer in test and measurement instruments such as oscilloscopes and logic analyzers. Its 70 ns access time is suitable for sampling buffers clocked at speeds up to approximately 14 MHz, and its fully static interface eliminates refresh-induced artifacts in captured waveforms. The 128 KB capacity supports deep pre-trigger capture in cost-sensitive benchtop instruments. Recommended companion: a 5 V-tolerant FPGA or microcontroller host with parallel bus interface.
موصى به
ملخص المنتجات الموصى بها
بيانات مرجعية هندسية لـ K6T1008C2E-GB70 — المقارنة وإرشادات التصميم ومعلومات الامتثال.
دليل الاختيار
المقارنة مع البدائل
| المعامل | هذا المنتج | K6T1008C2E-GB55 | K6T1008C2E-DB70 | AS6C1008-70PCN | CY7C109-30VC | IS62C1024-70V |
|---|---|---|---|---|---|---|
| Brand | Samsung Electro-Mechanics | Samsung Electro-Mechanics | Samsung Electro-Mechanics | Alliance Memory | Infineon | ISSI |
| Package | SOP-32 | SOP-32 (same) | SOP-32 (same) | SOP-32 (same) | SOP-32 (same) | SOP-32 (same) |
| Memory Organization | 128K x 8 | 128K x 8 (same) | 128K x 8 (same) | 128K x 8 (same) | 128K x 8 (same) | 128K x 8 (same) |
| Access Time (tAA) | 70 ns | 55 ns | 70 ns (same) | 70 ns (same) | 30 ns | 70 ns (same) |
| Supply Voltage (VCC) | 4.5 V to 5.5 V | 4.5 V to 5.5 V (same) | 4.5 V to 5.5 V (same) | 4.5 V to 5.5 V (same) | 4.5 V to 5.5 V (same) | 4.5 V to 5.5 V (same) |
| Memory Type | Async SRAM (CMOS) | Async SRAM (same) | Async SRAM (same) | Async SRAM (same) | Async SRAM (same) | Async SRAM (same) |
| Lifecycle Status | Obsolete | Obsolete | Obsolete | Active | Active (limited) | Active |
أبرز الفروقات
- Industry-standard JEDEC 128Kx8 32-SOIC pinout (مقابلAS6C1008-70PCN)
- Lower operating current at 70 ns grade (مقابلCY7C109-30VC)
- Wide second-source ecosystem (مقابلIS62C1024-70V)
ملاحظات التصميم
Decouple VCC with a 0.1 µF ceramic capacitor placed within 5 mm of the device VCC pin (pin 28), per Samsung's typical application circuit. The K6T1008C2E-GB70 draws up to 50 mA during active read/write cycles; bulk decoupling (10 µF tantalum or aluminum polymer) is recommended at the PCB power entry. Use a star-ground topology to isolate SRAM ground return currents from noisy digital grounds.
Route address and data lines with matched trace lengths to minimize skew. The asynchronous SRAM interface is sensitive to address-to-data timing; keep address lines within 10 mm of the device to limit propagation delay. Place the SOP-32 part on the same signal layer as the host controller when possible, avoiding via stubs on address and data paths.
Do not exceed the absolute maximum VCC rating of 7.0 V, as the CMOS process is not 3.3 V tolerant. Verify CE, OE, and WE polarities against the host schematic before PCB bring-up; the K6T1008C2E-GB70 uses active-low controls. For battery-backed designs, ensure data retention voltage is specified; this part requires VCC ≥ 4.5 V to retain data reliably.
At 70 ns access time, address bus transitions must settle within the tAA specification. Keep capacitive loading on data lines below 50 pF by using a single buffer per bus when fanning out to multiple peripherals. Series termination (33 Ω) at the SRAM output is optional but can help reduce ringing on long PCB traces in noisy industrial environments.
معلومات الامتثال
Lead-free per -G package code and -B suffix. RoHS compliance inferred from Samsung K6T family datasheet declarations. REACH, halogen-free, and conflict minerals data not available in verified web data.
