Power MOSFET Drivers
Products (426)
BTS3800SLHTSA1 - 350mA Smart Low-Side Switch, 0.8Ī© | Infineon
The Infineon BTS3800SLHTSA1 is a single-channel, N-channel MOSFET-based low-side power switch rated at 350 mA continuous load current and 0.8 Ī© typical on-resistance, housed in a 5-pin PG-SCT595 surface-mount package. Part of Infineon's Classic HITFET family, the device is monolithically integrated with a vertical power MOSFET and a full suite of embedded protective functions, and is qualified to AEC-Q100 for automotive and harsh industrial environments. A smart low-side switch is a discrete-replacement IC that sits between a microcontroller GPIO and a ground-referenced load such as a relay, solenoid, valve, or LED string. By moving the high-current path off the MCU and onto the switch, the design gains fault isolation, accurate current limiting, and thermal protection. The BTS3800SL belongs to the broader power-management category, specifically the low-side driver / power-distribution switch sub-category that complements high-side PROFET devices in body-control modules. Key features include 41 V drain-to-source voltage rating for harsh load-dump transients, an operating input voltage range of approximately 2.7 V to 5.5 V at the logic/IN pin, typical 0.8 Ī© R_DS(on) at 25 Ā°C, integrated overtemperature shutdown with auto-restart, overcurrent limitation, and overvoltage clamping on the output. The 5-pin PG-SCT595 (gull-wing) footprint occupies roughly 6.5 mm Ć 4.0 mm on the PCB and supports standard reflow profiles. The device is built on Infineon's automotive-qualified smart-power BCDMOS process, which co-integrates the analog control block, charge pump, and the vertical N-channel output DMOS into one die. This monolithic integration is what enables the small 5-pin outline while still providing the full protection and diagnostic feature set normally seen in larger SO-8 parts. Typical applications include automotive relay and solenoid drivers (door locks, mirror adjust, seat modules), LED string drivers for interior lighting and status indication, small DC motor drivers for HVAC flaps and mirror fold, and industrial 24 V PLC discrete outputs where 350 mA load current is sufficient. When designing with this part, the user should respect the PCB thermal guidelines in the manufacturer's datasheet: the exposed die pad must be soldered to a copper area of at least 1 cmĀ² to keep R_thJA within the safe operating envelope, and a freewheeling diode is mandatory for inductive loads. This page consolidates distributor pricing, AEC-Q100 cross-brand drop-in alternatives, and practical layout notes that go beyond the manufacturer datasheet, enabling rapid engineering qualification and sourcing decisions.
BTS4130QGAXUMA1 - Quad Hi-Side Switch 2.1A PG-DSO-20 | Infineon
The Infineon BTS4130QGAXUMA1 is a quad-channel Smart High-Side Power Switch housed in a PG-DSO-20-32 (20-pin DSO) package with integrated protective functions and diagnostic feedback. Each of the four output channels is built on an N-channel power MOSFET with charge pump, monolithically integrated in Infineon Smart technology, and rated for 2.1 A continuous load current per channel. The on-state resistance per channel is 130 mOhm typical, enabling efficient switching of resistive and inductive loads in 12 V automotive systems. A high-side power switch (also called a smart high-side driver) is a semiconductor switch placed between the positive supply rail and the load, controlling current flow with low-side referenced logic. Within the broader IC hierarchy, it sits in the power management family alongside low-side switches, half-bridge drivers, and H-bridges, and is specifically engineered to replace electromechanical relays and discrete MOSFET circuits in body-electronics, lighting, and heating modules. The BTS4130QGA family uses N-channel MOSFETs with an internal charge pump rather than P-channel devices, giving lower R_DS(on) per silicon area and tighter current-limit accuracy. Key features include per-channel current limiting, overtemperature shutdown with auto-restart, overvoltage clamp (load-dump robust to 45 V), reverse-battery protection via an intrinsic body diode, ground-loss robustness, and a status feedback pin for fault indication to the MCU. The device operates from a 6 V to 18 V supply (extended range up to 28 V transient) and is qualified to AEC-Q100 for automotive use. Typical applications include driving automotive lamps up to 2.1 A per channel, relay replacement in body control modules, solenoid and small-motor drivers, and resistive heating elements. The quad-channel integration lets one IC replace four discrete high-side switches, reducing PCB area and BOM cost. When designing in this part, ensure the heatsink copper area is sized to keep junction temperature below 150 C at the worst-case ambient and per-channel load, and always include reverse-battery protection at the module input. Compared with discrete N-MOSFET + gate-driver solutions, the BTS4130QGA eliminates gate-drive design complexity and provides diagnostic feedback out of the box.
BTS4140NHUMA1 - Smart High-Side Switch 200mA SOT-223 | Infineon
The Infineon BTS4140NHUMA1 is a single-channel smart high-side power switch with integrated vertical N-channel power FET, rated for 200 mA continuous load current and packaged in a PG-SOT223-4 (TO-261-4) surface-mount module. The device provides embedded protection (current limitation, short-circuit shutdown, thermal shutdown, overvoltage/load-dump protection, and undervoltage shutdown) plus diagnostic feedback, making it a member of the Classic PROFET 24V family designed for rugged 12V/24V automotive and industrial environments. A high-side switch is a power distribution topology in which the load is connected between ground and the MOSFET drain, and the switch sits between the positive supply rail and the load. Compared with low-side switching, high-side switches protect the load from shorts to ground, allow ground-referenced loads (lamps, solenoids, relays), and provide a more intuitive fault response. The BTS4140NHUMA1 belongs to the MINI-PROFET sub-family, optimized for compact PCB footprints and modest current levels up to about 200 mA. Key features include a typical on-resistance of approximately 1.2 ohm at 25 C, an operating voltage range of about 6 V to 62 V (with load-dump transient tolerance), current-controlled CMOS-compatible input, status flag output, and integrated clamping for inductive load turn-off. The PG-SOT223-4 package exposes a large thermal tab that doubles as the drain terminal and provides low thermal resistance for heat spreading into the PCB copper. The internal architecture combines a charge pump to drive the gate of the vertical N-channel MOSFET, a current-sense element, bandgap-based references for the protection comparators, and a status generator that pulls the diagnostic pin low in fault conditions. This monolithic integration reduces external BOM count (no flyback diode required for small inductive loads) and simplifies AEC-Q100-style qualification for the host module. Typical applications include automotive body electronics (door locks, mirror heaters, small lamp drivers, sensor supply switching), industrial 24V PLC discrete outputs, relay replacement in HVAC controls, and any 12V/24V subsystem needing protected, diagnostic-enabled high-side switching. The BTS4140NHUMA1 is especially well suited where PCB space is constrained but full PROFET protection is required. When designing with this part, place the PG-SOT223-4 thermal tab on a copper area of at least 1 cm squared to keep junction temperature within the 150 C Tj(max) under worst-case load-dump and ambient conditions. Always include a reverse-polarity protection block (P-MOSFET or Schottky) on the supply rail because the BTS4140NHUMA1 does not block reverse battery voltage on its own. This page synthesizes distributor pricing, SOT-223-4 drop-in alternatives, and practical thermal/PCB design notes that are not present in the manufacturer datasheet alone, accelerating both component selection and layout review.
BTS4141NHUMA1 - 700mA 24V Smart High-Side Switch | Infineon
The Infineon BTS4141NHUMA1 is a 700 mA single-channel smart high-side power switch housed in a PG-SOT223-4 (3+Tab) surface-mount package, built on Infineon's Classic PROFET family of vertical N-channel MOSFET switches with embedded protection and diagnostic functions. The part is specified for a 24 V automotive supply rail with integrated 0.15 ohm on-state resistance, providing energy-efficient load drive in a footprint-compatible SOT-223 outline. It supports continuous load current up to 700 mA and is qualified for automotive use per the manufacturer's automotive-grade certification. A high-side smart switch (also known as an intelligent high-side driver, or smart FET) is a power-distribution device that places the MOSFET on the supply side of the load rather than the ground side. This topology returns load current directly to the chassis ground through the load, simplifies fault detection, and eliminates ground-shift problems in body-control modules, lighting drivers, and relay replacements. The BTS4141N belongs to the Classic PROFET 24V family, which sits within the broader power-management IC hierarchy of load drivers, hot-swap controllers, and eFuses. Key features include overload protection with current limiting, thermal shutdown with automatic restart, overvoltage protection including load-dump transients, undervoltage shutdown with auto-restart and hysteresis, switching of inductive loads, and ESD protection. The integrated charge pump drives the gate of the N-channel vertical DMOS, while a status flag pin provides diagnostic feedback to the microcontroller. Compared to discrete MOSFET-plus-driver designs, the BTS4141N reduces BOM count, PCB area, and design effort. The BTS4141N is built on a vertical N-channel DMOS process that achieves a typical R_DS(on) of 0.15 ohm at room temperature. This on-resistance translates into low conduction loss - approximately 73 mW at 700 mA - which keeps the SOT-223 package within its thermal envelope without an external heatsink for typical automotive loads. The integrated logic interface accepts 3.3 V and 5 V CMOS levels directly, simplifying connection to modern microcontrollers. Typical applications include 24 V automotive body electronics such as lamp drivers (interior lights, position lamps, indicator LEDs), relay and solenoid replacement, small motor drivers (e.g., mirror adjust), and resistive load switching in central body controllers. The part is also used in industrial 24 V systems where its diagnostic feedback and protection set provide robust load management. When designing with the BTS4141NHUMA1, observe the maximum input voltage rating and derate output current with ambient temperature. A low-ESR input capacitor placed close to the Vbb pin is required to handle load-dump and jump-start transients; the tab of the SOT-223 must be soldered to a sufficient copper pour to keep junction temperature below the thermal-shutdown threshold. This page synthesizes distributor pricing, drop-in alternatives, comparison data, and practical design notes not found in the manufacturer datasheet alone, helping engineers select and qualify the BTS4141NHUMA1 faster.
BTS4142NHUMA1 - 1.4A 24V Smart High-Side Switch | Infineon
The Infineon BTS4142NHUMA1 is a single-channel 1.4 A smart high-side power switch built on Infineon's Classic PROFETā¢ 24 V vertical-FET technology, housed in a PG-SOT223-4 surface-mount package. It integrates an N-channel power MOSFET with embedded protection, diagnostic feedback, and logic-level control in a 4-pin footprint designed for automotive and industrial 24 V loads. A high-side switch is a power-distribution topology in which the MOSFET is placed between the supply rail and the load, allowing the load to be grounded and switched from the positive rail. Compared with low-side switching, high-side drive eliminates ground-shift noise, breaks ground-return loops, and is the industry standard for automotive lighting, relay replacement, and resistive/inductive 24 V loads. The BTS4142N family belongs to the broader category of power-management ICs (PMICs) and specifically to protected smart high-side switches (also called intelligent power switches, IPS, or PROFET devices). Key specifications include a 1.4 A nominal output current, a 70 mĪ© typical on-state resistance (RDS(on)), a wide 6 V to 42 V operating supply range, and integrated protections: overload current limiting, thermal shutdown with auto-restart, overvoltage clamping (including load-dump), undervoltage shutdown with auto-restart and hysteresis, and ESD protection on the logic input. The logic-level input supports 3.3 V and 5 V microcontrollers directly. Typical quiescent current is in the low microampere range, enabling always-on standby in body-control modules. Internally the device uses a charge-pump-driven vertical N-channel DMOS output stage that achieves the 70 mĪ© RDS(on) within a small SOT223 footprint. A diagnostic feedback pin reports open-load and overtemperature conditions to the microcontroller, supporting ASIL-relevant fault detection in safety-oriented automotive subsystems. The integrated reverse-battery protection is implemented at the package level, so no external reverse-diode is required on the supply pin. Typical applications include 24 V automotive LED and incandescent lighting, relay and solenoid replacement, HVAC flap motors, seat-heater control, and industrial 24 V resistive/inductive loads. Designers also use it for general-purpose high-side switching where integrated protection replaces discrete MOSFET-plus-fuse designs. When designing with the BTS4142NHUMA1, observe the datasheet's recommended PCB footprint and ensure the tab/thermal pad is soldered to sufficient copper area. For PWM dimming, stay below the maximum PWM frequency limit specified in the datasheet to avoid triggering thermal protection at high duty cycles. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
BTS4175SGAXUMA1 - 1.3A Smart High-Side Switch | Infineon
The Infineon BTS4175SGAXUMA1 is a single-channel Smart High-Side Power Switch (Classic PROFETā¢ 24V family) rated for 1.3A continuous load current, built on an N-channel vertical power MOSFET with charge pump and embedded protection logic. The device is housed in a PG-DSO-8-24 surface-mount package (8-pin DSO with exposed thermal pad) and is qualified for automotive and industrial 24V applications. Key headline parameters are 1.3A nominal current, 1:1 N-channel high-side topology, and PG-DSO-8-24 footprint. A high-side power switch is a semiconductor device placed between the supply rail and the load, controlling load current by switching the high-side (positive) conductor rather than the low-side return. This topology keeps the load referenced to ground in the off state, which improves short-circuit safety and simplifies wiring diagnostics. Within the broader taxonomy, the BTS4175SGA sits in the high-side switch family, which belongs to power distribution switches, which are a subset of power management ICs (PMIC) and ultimately of semiconductor power devices. The Classic PROFETā¢ naming convention is Infineon's brand for its 24V smart high-side switches targeting automotive body and chassis modules. Key features include overload protection with current limiting at approximately 1.3A peak, thermal shutdown with auto-restart, short-circuit protection, over-voltage clamp at the output, ESD protection on all pins, and diagnostic feedback through a status output pin. The CMOS-compatible input accepts 3.3V or 5V logic levels directly, eliminating the need for a level shifter. The integrated charge pump drives the N-channel MOSFET gate above the supply rail so the device can deliver true high-side switching from a single 24V supply. Architecturally, the BTS4175SGA combines a vertical N-channel DMOS output stage, an on-chip charge pump, a sense-FET current-mirror for load-current monitoring, and a digital control block implementing protection timers and fault latching. The exposed thermal pad on the PG-DSO-8-24 package keeps junction-to-ambient thermal resistance low enough that the 1.3A rating is achievable without an external heatsink on standard 1- or 2-ounce copper FR-4 boards. The status pin distinguishes between normal operation, overtemperature, and open-load events for in-vehicle diagnostics (OBD) compliance. Typical applications include automotive lighting modules (headlamps, tail-lamps, interior LED strings), resistive heating loads such as seat heaters and mirror defrosters, small DC motor drivers for window lifters and door locks, and industrial 24V solenoid/valve switching. The device is also suitable as a general-purpose protected high-side driver in PLC digital outputs and process-control instrumentation. When designing with the BTS4175SGA, pay close attention to input-to-output ground-loop layout, keep the input capacitor close to the Vbb pin, and ensure the exposed pad receives a copper pour of at least 1 cmĀ² for thermal relief. Designers should also verify cold-crash and load-dump transient behaviour against ISO 7637-2 waveforms, since automotive 24V buses can swing well above the nominal supply during cranking events. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet, offering engineers a single reference for sourcing, replacement, and PCB-level implementation of the BTS4175SGAXUMA1.
BTS426L1E3062AAUMA1 - 7A 12V Smart High-Side Switch | Infineon
The Infineon BTS426L1E3062AAUMA1 is a single-channel, 12 V automotive smart high-side power switch built on Smart SIPMOS technology in a PG-TO263-5-2 (DPAK) surface-mount package. It integrates an N-channel vertical power FET with charge pump, ground-referenced CMOS-compatible input, and diagnostic feedback, delivering a typical on-state resistance of 5 mĪ© and a continuous load current capability of 7 A per the manufacturer's datasheet. The device is part of Infineon's Classic PROFET 12 V family, designed for 12 V automotive load driving with embedded protection functions. A high-side power switch, often referred to as a smart switch or PROFET (Protected FET), is a semiconductor device that connects a load (e.g., a lamp, solenoid, or motor) to the positive supply rail while providing built-in protection against overcurrent, overtemperature, overvoltage, and short-circuit conditions. It belongs to the broader hierarchy: smart power switch ā power distribution switch ā power management IC ā semiconductor device, and it typically replaces discrete MOSFETs, fuses, and relay circuits in automotive body and powertrain ECUs. Key features of the BTS426L1E3062AAUMA1 include a wide operating voltage range suitable for 12 V automotive systems, 5 mĪ© typical RDS(on) for low conduction losses, CMOS-compatible logic-level input, ground-referenced status diagnostic output, and comprehensive embedded protections: overload current limiting, thermal shutdown with auto-restart, overvoltage clamp (including load-dump), reverse battery protection via external components, and ESD protection. The charge pump generates the gate drive for the N-channel MOSFET, enabling true low-RDS(on) high-side switching without a P-channel device. Architecturally, the BTS426L1E3062AAUMA1 monolithically integrates a vertical N-channel power MOSFET, charge pump, gate driver, current sense, and thermal sensor into one Smart SIPMOS die. The charge-pump-generated gate voltage exceeds the battery rail so the N-FET can be fully enhanced for minimal voltage drop. An external resistor at the GND pin (RGND, e.g., 150 Ī©) sets the diagnostic current-limit threshold, while a series resistor at the ST (status) pin protects the diagnostic feedback output. Typical applications include automotive body electronics such as lamp drivers (headlamps, tail lamps, indicators), solenoid and valve control, LED lighting modules, heater circuits, and small DC motor drivers in body control modules (BCMs). The wide SOA and embedded protection make it especially attractive for replacing electromechanical relays and fuses in next-generation automotive electrical architectures. When designing with this part, place the device on a copper pour adequate to dissipate typical 2-4 W steady-state losses, and follow Infineon's application-note recommendations for inverse-polarity, reverse-load, and load-dump protection networks. Use the device within its SOA boundaries; thermal accumulation under repetitive short-circuit pulses can trigger shutdown. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
BTS426L1E3062ABUMA1 - 5.8A 12V Smart High-Side Switch | Infineon
The Infineon BTS426L1E3062ABUMA1 is a 12 V automotive smart high-side power switch with an integrated vertical N-channel power FET, housed in a 5-pin PG-TO263-5-2 (D2PAK with 4 leads + tab) surface-mount package. According to the Infineon product page, the device provides 5.8 A continuous output current capability, a typical R_DS(on) of 5 mĪ© (per Infineon's BTS426L1-E3062A datasheet family), and embedded protection/diagnostic functions for 12 V automotive loads. What is a high-side power switch? A high-side switch is a semiconductor load driver placed between the supply rail and the load, allowing the load to be turned on/off and protected against fault conditions. The "smart" designation means protection, diagnostic feedback, and control logic are integrated into one package, replacing discrete MOSFETs plus fuse/TVS protection. Smart high-side switches sit within the broader hierarchy: power distribution switch -> load driver -> power management IC -> semiconductor, and are commonly known as PROFET (Protected FET) devices. Key features include overload protection, current limitation, short-circuit protection, thermal shutdown with auto-restart, overvoltage protection (including load-dump transients per ISO 7637), fast demagnetization of inductive loads, and reverse-battery protection. The integrated charge pump drives the N-channel MOSFET fully on, achieving the low R_DS(on) that minimizes conduction dissipation. A diagnostic feedback pin reports open-load, short-to-ground, overtemperature, and overcurrent conditions back to the microcontroller. Typical applications include automotive body electronics (lighting, seat heating, mirror adjustment), relay and fuse replacement, power distribution modules, and industrial 24 V/12 V load switching. The wide operating range and ISO 7637 load-dump tolerance make it especially suitable for direct connection to the vehicle 12 V battery bus. Designers should consider thermal dissipation: at 5.8 A continuous load and 5 mĪ© R_DS(on), conduction loss is roughly 0.17 W, but fault currents and ambient temperature in engine-bay environments can push junction temperature toward the 150 Ā°C TJ limit. Per datasheet guidance, use thermal vias under the exposed tab and adequate PCB copper for heat spreading. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone.
BTS428L2ATMA1 - 5.8A Smart High-Side Switch | Infineon
The Infineon BTS428L2ATMA1 is a single-channel, 5.8 A smart high-side power switch built on Infineon's classic PROFET (smart SIPMOS) technology, housed in a PG-TO252-5-11 (DPAK-5, 4 leads + tab) surface-mount package. The device integrates a vertical N-channel power MOSFET with charge pump, ground-referenced CMOS-compatible input, and embedded protection/diagnostic feedback functions, enabling direct microcontroller-driven control of resistive or small inductive loads from a 24 V automotive supply rail. A high-side power switch (also called a smart high-side driver) is a type of power distribution switch placed between the supply rail and the load; by switching the high side, the load is grounded only when off, simplifying wiring harnesses and improving short-circuit detection. Within the broader semiconductor taxonomy it sits in: high-side switch -> power distribution switch -> power management IC -> semiconductor. The BTS428L2 family belongs to Infineon's Classic PROFET 24V family aimed at automotive body and chassis applications requiring one-wire control with full diagnostic feedback. Key features include a 50 mOhm typical on-state resistance (R_DS(on)), very low standby current for quiescent battery savings, fast demagnetization of inductive loads, stable behavior under undervoltage conditions, and improved EMC. Protection features include load current limitation, overtemperature shutdown with autorestart, overvoltage clamp (including load-dump), reverse-battery robustness via the tab, and ground-loss protection. A diagnostic feedback pin reports open-load, short-to-battery, short-to-ground, and overtemperature conditions back to the microcontroller. The BTS428L2ATMA1 operates across a wide supply range typical of automotive 12 V/24 V systems, supports a continuous load current up to 5.8 A, and provides CMOS-level input thresholds so it can be driven directly from 3.3 V or 5 V microcontroller GPIO pins. The device is qualified to automotive reliability standards and supplied in a green (RoHS-compliant, Pb-free) package suitable for Pb-free reflow soldering per IPC/JEDEC J-STD-020. Typical applications include automotive body electronics (lighting, door modules, seat control), 24 V truck and bus power distribution, industrial 24 V PLC outputs, and any microcontroller-driven resistive or inductive load requiring comprehensive on-chip protection and diagnostic feedback. Compared to a discrete MOSFET + fuse solution, the BTS428L2ATMA1 reduces PCB area, eliminates the fusible element, and provides software-readable fault diagnostics. When designing with this device, ensure the tab is soldered to a sufficient copper pour for heatsinking - thermal performance scales with PCB copper area. Add a reverse-polarity protection diode or use the device's reverse-battery capability thoughtfully; ensure the input pin has a defined logic level during MCU reset to avoid unintended turn-on. The diagnostic pin requires an external pull-up resistor. This page synthesizes distributor pricing, drop-in alternative candidates, and practical design notes not found in the manufacturer datasheet alone, providing a one-stop engineering reference for the BTS428L2ATMA1.
BTS441RGATMA1 - 17A Smart High-Side Power Switch TO-263-5
The Infineon BTS441RGATMA1 is a 17 A smart high-side power switch built on Smart SIPMOS technology with a single N-channel vertical power FET and integrated charge pump. Housed in a PG-TO263-5-2 (TO-263-5) surface-mount package with a 1:1 N-channel switch topology, it delivers a 1:1 power switch/driver function with diagnostic feedback for 12 V and 24 V automotive and industrial loads. A smart high-side power switch is a type of power distribution switch that sits between the supply rail and the load, providing controlled turn-on, current limiting, and protective features. Smart high-side switches belong to the broader family of power distribution switches -> load switches -> power management ICs -> semiconductor devices, replacing discrete fuses and relays with solid-state protection that can be controlled by a microcontroller. Key features include 17 A continuous load current capability, integrated CMOS-compatible ground-referenced input, diagnostic feedback output, and monolithic charge-pump gate drive. The BTS441RGATMA1 provides short-circuit, overload, and thermal protection as well as over-voltage clamping, enabling reliable switching of resistive, capacitive, and inductive loads in harsh automotive environments. Architecturally, the part uses an N-channel vertical DMOS output stage driven by an on-chip charge pump, allowing full enhancement at low battery voltages while maintaining low Rds(on). The diagnostic pin reports fault conditions such as overtemperature and open load, simplifying ECU firmware design. According to the manufacturer datasheet, the device operates across the standard 12 V/24 V automotive bus range with reverse-battery robustness. Typical applications include automotive lighting control (headlamps, tail lamps, turn signals), body electronics (door locks, seat heaters), and industrial 24 V load switching. The device is also used in power distribution modules and relay replacements where solid-state reliability and diagnostics are required. When designing with this part, ensure the load current does not exceed 17 A continuously and provide adequate copper area on the PCB to dissipate package heat. The exposed tab (pin 5) functions as the main heat path and must be soldered to a sufficiently large copper pour. Use a flyback or free-wheeling diode across inductive loads if the device's internal clamping is insufficient for the energy in the load inductance. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone.
BTS441TGATMA1 - 17A 24V Smart High-Side Switch | Infineon PROFET
The Infineon BTS441TGATMA1 is a single-channel 17 A high-side power switch with an integrated vertical N-channel power FET, housed in a PG-TO263-5-2 (DPAK-5) surface-mount package. Built on Infineon's Classic PROFET family, it provides embedded protection and diagnostic functions for harsh 12 V and 24 V automotive and industrial environments. Key specifications include 17 A continuous load current, 200 mOhm typical on-state resistance, and 4.5 V to 42 V operating supply range that tolerates load-dump transients on 24 V buses. What is a smart high-side switch? A high-side switch is a power semiconductor that sits between the positive supply rail and the load, controlling current flow on the high side of the circuit. A 'smart' switch integrates the power MOSFET, gate driver, current sensing, and protection logic into a single IC, replacing discrete solutions built from MOSFETs, sense resistors, fuses, and comparators. Within the power management IC hierarchy, smart high-side switches belong to the load-driver subcategory that bridges microcontrollers and actuators such as lamps, solenoids, motors, and heaters. The BTS441TGATMA1 embeds overload protection with active current limitation, short-circuit protection, thermal shutdown with auto-restart, overvoltage protection including load-dump, fast demagnetization of inductive loads, and ESD protection. Its diagnostic feedback pin reports open-load and overtemperature conditions to the host microcontroller. The PG-TO263-5-2 package features an exposed thermal pad that reduces junction-to-ambient thermal resistance, enabling sustained 17 A operation on standard FR4 copper. Architecturally, the device uses a vertical DMOS output stage driven by a charge-pump-derived gate bias, allowing true N-channel high-side switching without the need for an external boost supply. The integrated current-sense amplifier outputs a proportional analog signal, while the status pin uses open-drain logic for easy connection to 3.3 V or 5 V MCUs. Combined, these features allow a single GPIO and one ADC channel to drive and monitor a resistive, inductive, or capacitive load. Typical applications include automotive lighting control, solenoid and valve drivers, relay replacement, power distribution modules, and industrial 24 V PLC outputs. Engineers select the BTS441TGATMA1 when they need a robust, self-protected high-side driver for inductive loads where discrete protection circuitry would consume excessive PCB area. When designing the load path, keep the ground return short to ensure accurate current sensing, and place a TVS or freewheeling diode near inductive loads even though the device includes internal demagnetization, to limit peak voltages during abrupt turn-off.
BTS452RATMA1 - 1.8A Smart High-Side Switch | Infineon
The Infineon BTS452RATMA1 is a 24 V smart high-side power switch with an integrated vertical N-channel power FET, housed in a PG-TO252-5-11 (DPAK-5) surface-mount package. The device provides 1.8 A typical continuous load current capability and is part of Infineon's Classic PROFET 24 V family designed for automotive and industrial load driving. The BTS452RATMA1 features an on-state resistance of approximately 200 mĪ©, ensuring low conduction loss when driving resistive or inductive loads. A high-side switch is a power distribution semiconductor that sits between the supply rail (typically +12 V or +24 V) and the load. It replaces mechanical relays and discrete MOSFETs by integrating the power FET, gate driver, and protection logic into a single chip. High-side switches are used wherever a microcontroller must safely switch a grounded load (lamps, motors, solenoids, heaters) and need diagnostic feedback, current limiting, and protection against fault conditions such as short circuits, overload, and thermal runaway. Key specifications include an operating voltage range of 6 V to 32 V (load-dump tolerant up to 42 V), embedded overload protection with active current limitation, short-circuit protection, thermal shutdown with auto-restart, overvoltage protection including load dump, and undervoltage shutdown. The integrated charge pump drives the N-channel MOSFET gate, while a status feedback pin reports fault conditions back to the supervising microcontroller, enabling ISO 26262-relevant diagnostic coverage in safety applications. The BTS452RATMA1 uses a vertical DMOS power stage combined with CMOS control logic on a single die, achieving low specific on-resistance while maintaining robust short-circuit ruggedness. The 8 mĪ© nominal RDS(on) (per Infineon's PROFET 24V datasheet family) is achieved through the vertical FET structure that places the drain on the backside of the die, allowing direct thermal conduction into the DPAK tab. Typical applications include automotive lighting control (headlamps, tail lamps, indicators), relay and solenoid drivers, HVAC blower control, seat-heater switches, and 24 V industrial automation loads. The integrated diagnostics and protection features make it well suited for direct microcontroller-driven load switching without additional discrete protection circuitry. Designers should pay attention to thermal management: the DPAK-5 tab must be soldered to a sufficient copper pour area (typically 35 cmĀ² or more on a standard 1 oz FR-4 PCB) to keep junction temperature within ratings under worst-case load conditions. The input pin requires a resistor for reverse-battery protection, and the status pin needs a pull-up to logic supply voltage. This page synthesizes distributor pricing from DigiKey, Mouser, and LCSC, drop-in same-package alternatives from the Infineon PROFET family, and practical PCB thermal design notes not found in the manufacturer datasheet alone.
BTS452TATMA1 - 1.8A High-Side Smart Power Switch | Infineon
The Infineon BTS452TATMA1 is a 1.8 A high-side N-channel power switch with integrated vertical power MOSFET, providing embedded protection and diagnostic functions, housed in a PG-TO252-5 (DPAK-5) surface-mount package. It operates from 6 V to 52 V supply voltage, drives up to 1.8 A continuous load current, and offers 200 mOhm typical on-state resistance (RDS(on)). The device is part of Infineon's MINI-PROFET family, designed for 12 V, 24 V, and 42 V DC automotive and industrial load management. A high-side power switch (also called a smart high-side driver or PROFET) is an N-channel MOSFET configured between the supply rail and the load, allowing the load to be grounded and switched by pulling the MOSFET gate high. Compared with discrete MOSFETs plus fuses, an integrated high-side switch embeds protection (overcurrent, short-circuit, overtemperature, overvoltage, undervoltage) and diagnostic feedback (status flag), reducing BOM count and improving reliability in harsh electrical environments such as automotive 12 V/24 V buses. Key features include active current limiting with restart, thermal shutdown with auto-restart, overvoltage protection including load-dump survival, undervoltage shutdown, and an open-drain status output. The BTS452TATMA1 is microcontroller-compatible, accepting 3.3 V or 5 V logic inputs directly at the IN pin. Its PG-TO252-5 (DPAK) package with exposed metal tab provides low thermal resistance (~50 C/W) for continuous 1.8 A operation without external heatsinking on moderate PCB copper area. The BTS452TATMA1 uses Infineon's SIPMOS vertical DMOS process, providing low RDS(on) per unit silicon area and inherent avalanche ruggedness. The integrated charge pump generates the gate drive above the supply rail to fully enhance the N-channel MOSFET, while the diagnostic logic monitors drain current and die temperature. The result is a single-package solution that replaces a discrete MOSFET, gate driver, current-sense resistor, and protection circuitry. Typical applications include automotive body electronics (lighting, seat heaters, mirror heaters, door locks), industrial 24 V load switching (solenoids, valves, small motors), and resistive/inductive/capacitive load control in PLCs and process control modules. It is qualified to AEC-Q100 standards for automotive use and is one of the most widely deployed PROFET parts in vehicle ECUs. When designing with this device, ensure the IN pin logic levels match your microcontroller's GPIO output (TTL/CMOS compatible), route the status output to an interrupt-capable input for fault handling, and observe derating above 25 C ambient. The exposed pad must be soldered to a copper pour of at least 50 mmĀ² for rated continuous current at 85 C ambient. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
BTS462TATMA1 - 3.5A Smart High-Side Power Switch | Infineon
The Infineon BTS462TATMA1 is a 3.5 A smart high-side N-channel power switch housed in a PG-TO252-5 (DPAK-5) surface-mount package, providing one channel of protected load driving with embedded diagnostics. Operating from a 5 V to 34 V supply range, this MINI-PROFET device integrates a vertical power MOSFET, protection circuitry, and a status feedback path, making it a drop-in solution for harsh 12 V/24 V automotive and industrial environments. A smart high-side power switch is a semiconductor relay that places the load between ground and the switch output, allowing the IC to drive resistive, capacitive, and inductive loads with controlled turn-on/turn-off. High-side switches sit in the power management IC hierarchy above simple MOSFET drivers and below multi-channel system basis chips, providing per-channel protection against the most common fault modes encountered in automotive wiring (short-to-ground, overload, load-dump, and reverse-battery events). Key specifications include a continuous drain current of 3.5 A, an on-state resistance (RDS(on)) typically around 50 mOhm at 25 C, current-limit trip near 7 A, and built-in thermal shutdown with auto-restart. The device also features overvoltage protection covering load-dump transients, undervoltage shutdown to prevent in-rush faults, fast demagnetization for inductive loads, and a diagnostic feedback pin that signals open-load and overtemperature conditions back to the host microcontroller. Architecturally, the BTS462TATMA1 uses a vertical N-channel DMOS output stage driven by a CMOS charge-pump and logic interface, all co-integrated on a single die. The charge-pump maintains the gate drive above the source rail, ensuring low RDS(on) regardless of battery voltage. This monolithic integration delivers far better protection coverage than a discrete MOSFET plus fuse approach while reducing PCB footprint. Typical applications include automotive body controllers driving lamps, solenoids, and DC motors; industrial PLC discrete output modules; HVAC actuators; and any 12 V/24 V load that requires embedded protection. The PG-TO252-5 package provides a thermal pad that, when properly soldered to a copper pour, enables sustained 3.5 A operation without a heatsink. When designing with the BTS462TATMA1, observe input capacitor placement (close to Vbb pin) and a generous copper area on the drain tab to limit junction temperature rise. Fault-flag interpretation should be debounced in software, as the STATUS pin can pulse during legitimate switching transients. This page consolidates distributor pricing, cross-brand drop-in equivalents, and practical protection-circuit notes that extend beyond the manufacturer datasheet's typical application example.
BTS500071LUAAUMA1 - 55A Smart High-Side Switch | Infineon
The Infineon BTS500071LUAAUMA1 is a 0.7 mĪ© single-channel smart high-side power switch from the Power PROFET+ 12 V family, housed in a PG-HSOF-8-5 leadless package with exposed thermal pad. The device delivers up to 55 A continuous load current and operates from a 5.8 V to 18 V supply range, making it purpose-built for harsh 12 V automotive and industrial load-switching applications. Key differentiating specifications include a 0.7 mĪ© typical on-state resistance, integrated reverse-battery protection (Reverse ON), and built-in diagnostic feedback. A high-side smart switch (also called an intelligent high-side switch or IHSS) is a semiconductor power switch placed between the positive supply rail and the load, replacing mechanical relays and discrete MOSFETs with a fully protected solid-state alternative. Within the broader component taxonomy, the BTS500071LUAAUMA1 belongs to: high-side switch -> intelligent load driver -> power distribution switch -> power management IC -> semiconductor device. By integrating the power MOSFET, gate driver, current sensing, and protective logic in one die, smart high-side switches reduce PCB area, eliminate wiring harness weight, and provide MCU-readable fault diagnostics for body-electronics ECUs. Key features include a 55 A continuous current rating, 0.7 mĪ© typical RDS(on) at 25 Ā°C, dedicated current-limit and overload shutdown, over-temperature protection with auto-restart, over-voltage clamp at VDS, and ground-loss robustness. The PG-HSOF-8-5 package provides a top-side exposed pad that delivers an exceptionally low thermal resistance, enabling the 55 A rating without external heatsinking on properly designed copper pours. Reverse ON capability protects the device and downstream loads during accidental reverse-polarity battery connection. Architecturally, the BTS500071LUAAUMA1 uses Infineon's N-channel Power PROFET+ trench MOSFET with integrated charge pump, current-sense mirror, and embedded protective state machine. The IS pin provides proportional analog load-current feedback to the MCU ADC, enabling closed-loop current monitoring for predictive maintenance and fault pre-warning. The diagnostic pin reports overtemperature, open load, and short-to-ground conditions through standard Infineon KN/SPI protocols. Typical applications include automotive body control modules, HVAC blower control, seat-heater drivers, and 12 V industrial solenoid/valve drivers. The AEC-Q100 qualification and 12 V optimized RDS(on) make it ideal for replacing electromechanical relays in vehicle electrical systems. Design considerations include proper PCB thermal designāminimum 6 cmĀ² of 2 oz copper on the exposed pad is recommended for full 55 A operation. Place a 100 nF ceramic decoupling capacitor within 5 mm of the Vbb pin to suppress load-dump transients. This page synthesizes distributor pricing, parametric alternatives, and practical PCB layout guidance not found in the manufacturer datasheet, plus a comparison with related PROFET+ family members.
BTS500101LUAAUMA1 - 1.0mĪ© 46A High-Side Switch | Infineon
The Infineon BTS500101LUAAUMA1 is a 1.0 mĪ© single-channel smart high-side power switch rated for 46 A continuous load current, housed in an 8-pin PG-HSOF-8-6 (TO-leadless) package with exposed thermal pad. It operates from a supply voltage of 3.1 V to 28 V and is built on Infineon's PROFETā¢ + 12/24/48 V technology platform, providing integrated protection, diagnostics, and reverse-ON capability for robust 12 V, 24 V, and 48 V automotive and industrial loads. A high-side power switch (also called a high-side driver or smart high-side switch) is an N-channel MOSFET placed between the load and the positive supply rail, controlled by a logic-level input. Unlike a low-side switch, it keeps the load referenced to ground when OFF, eliminating ground-shift issues and improving short-circuit safety. Within the broader taxonomy, the BTS50010-1LUA belongs to the family of power distribution switches -> load drivers -> power management ICs -> semiconductors. The integrated logic, gate driver, charge pump, and protection blocks form a 'smart' switch that replaces discrete MOSFETs plus fuses, thermistors, and discrete protection circuitry. Key features include a 1.0 mĪ© typical on-state resistance (R_DS(on)) at 25 Ā°C, a continuous load current of 46 A, an operating voltage range of 3.1 V to 28 V, and an active-high logic input compatible with 3.3 V and 5 V microcontrollers. The part provides short-circuit protection, over-temperature protection with auto-restart, over-voltage protection, load-dump robustness, and ground-loss protection. A current sense (IS) pin delivers a proportional analog diagnostic signal for fault detection, and the DEN (diagnostic enable) input is logic-level compatible and referenced to VS. Typical applications include automotive body electronics (e.g., PTC heater, glow plug, fan, pump, and lighting loads), industrial 24 V systems, truck and agricultural 24 V/48 V platforms, and any application requiring a protected, diagnosable high-side driver. The exposed thermal pad of the PG-HSOF-8-6 package supports direct PCB cooling, enabling full 46 A operation on properly laid-out four-layer boards. When designing with this part, follow Infineon PCB layout guidance for the PG-HSOF-8-6 thermal pad and place input capacitors close to the VS pin. For load currents above 30 A, allocate at least 600 mmĀ² of copper on top and bottom layers tied to the exposed pad to keep junction temperature within SOA. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
BTS500101TAEATMA1 - 40A Smart High-Side Switch | Infineon | 12V Loads
The Infineon BTS500101TAEATMA1 is a single-channel smart high-side power switch in the PG-TO-263-7-10 (D2PAK-7) surface-mount package, built around an N-channel vertical power MOSFET with integrated charge pump and capable of driving loads up to 40A continuous / 250A peak in 12V automotive and industrial systems. Key headline parameters include a typical on-state resistance of 1.0 mĪ©, a 48A maximum continuous load current rating, and a logic-level 3.3V/5V compatible input that allows direct connection to a microcontroller GPIO. The Power PROFET family integration brings protection and diagnostic features that simplify the design of robust load-driving stages. A smart high-side switch (also called a high-side power switch or intelligent power switch, IPS) is a semiconductor device that connects a load to the positive supply rail and includes on-state MOSFET conduction, gate drive charge pump, protection circuitry (overcurrent, overtemperature, short-to-ground/battery, overvoltage), and load-current feedback for diagnostics. Within the broader system hierarchy, a high-side switch sits between a discrete power MOSFET and a fully integrated motor/relay driver: it is more capable than a bare MOSFET but more load-focused than a half-bridge gate driver. Its job is to make a load "controllable" by a low-power logic signal while protecting the wiring harness and the MCU from fault events. Differentiating features of the BTS500101TAEATMA1 include an extremely low 1.0 mĪ© R_DS(on) that minimizes conduction losses and thermal rise, an integrated charge pump that drives the N-channel MOSFET gate from the logic supply, built-in load-current sense output for fault detection and load monitoring, and AEC-Q100 qualification for automotive deployment. The PG-TO-263-7-10 (D2PAK-7) package with exposed thermal tab provides a low thermal resistance path, which is essential at 40A continuous current where IĀ²R losses still produce significant heat. Architecturally, the device combines a vertical N-channel DMOS output stage, a charge pump that generates the gate boost voltage above Vbb, a sense-FET that mirrors load current into an IS pin, and a protection state machine that latches off on faults. Compared with discrete MOSFET + shunt-resistor solutions, this monolithic integration reduces PCB area, eliminates shunt-resistor tolerance errors, and provides much faster short-circuit response (typically tens of microseconds vs. milliseconds for an MCU ADC-driven shutdown). Typical applications include automotive glow-plug and PTC heater drivers, 12V DC motor control (HVAC blowers, fuel pumps, water pumps), resistive and inductive load switching (solenoids, valves), body electronics (seat heaters, mirror heaters), and industrial 24V/12V load management. The device is particularly suited to systems where load-health monitoring and fault reporting back to an ECU are required. When designing with the BTS500101TAEATMA1, ensure the exposed pad is soldered to a sufficient copper pour (typically 6 cmĀ² or more on a 4-layer FR-4 board) to keep junction temperature within the 150Ā°C limit at 40A. Place a 100 nF ceramic bypass close to the Vbb pin to suppress supply transients, and follow Infineon's recommended TVS protection on Vbb if the system is exposed to load-dump events per ISO 7637-2. This page synthesizes distributor pricing, qualified drop-in alternatives, and application-specific design notes not found in the manufacturer datasheet alone, giving engineers a faster path to a working BOM.
BTS500251TEAAUMA1 - 24A Smart High-Side Switch | Infineon PROFET+
The Infineon BTS500251TEAAUMA1 (datasheet marketing name BTS50025-1TEA) is a 24 A single-channel smart high-side power switch in the Power PROFET+ family, housed in a PG-TO252-5-11 surface-mount package. It integrates a 2.5 mĪ© N-channel MOSFET output stage with embedded protective and diagnostic functions, targeting 12 V, 24 V, and 48 V automotive and industrial loads. What is a smart high-side switch? A smart high-side switch is an integrated power semiconductor that sits between a load and the positive supply rail. It replaces discrete MOSFETs, fuses, and relay logic with a single IC that controls the load via a logic-level input while continuously monitoring current, temperature, and supply voltage. Within the broader hierarchy, a high-side switch belongs to power distribution switches, which are part of the power management IC family used to drive resistive or inductive loads such as motors, heaters, lamps, and solenoids. Key specifications include a 2.5 mĪ© typical on-state resistance, 24 A continuous load current capability, and a logic-level (3.3 V/5 V) CMOS-compatible input. The device operates across 4.5 V to 28 V supply, with reverse battery protection rated for -28 V and load-dump robustness up to 42 V. Embedded diagnostics report open-load, short-to-ground, short-to-battery, and overtemperature faults through a current-sense IS pin. The PG-TO252-5-11 package offers a thermal resistance around 35 C/W junction-to-ambient on a standard 1 oz copper JEDEC test PCB, enabling sustained high-current switching without external heatsinking. The BTS50025-1TEA uses a vertical N-channel DMOS output stage driven by a charge-pump-assisted gate driver. This topology gives very low R_DS(on) for reduced conduction losses, while the integrated charge pump keeps the gate enhancement high enough to fully turn on the DMOS at low battery voltages. Reverse-polarity protection is implemented on-die, eliminating the need for an external blocking diode and saving both board space and forward-voltage drop. Typical applications include automotive glow-plug and PTC heater drivers, electric water-oil-fuel pumps, HVAC blower fans, LED lighting modules, and industrial 24 V solenoid or valve drivers. The wide operating range also makes it attractive for 48 V mild-hybrid auxiliary loads. Designers appreciate the family for combining a small footprint with the diagnostic feedback that modern ECU architectures require. When designing with this part, observe the datasheet's recommended PCB copper layout for the drain tab to keep thermal resistance within budget. The IS pin output requires an external sense resistor and, for high-accuracy current monitoring, a low-pass filter to reject switching transients. Reverse-battery events must be checked against the -28 V rating for the application's worst-case jump-start and load-dump profile. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes that complement the Infineon datasheet, giving engineers a faster path from selection to qualified PCB.
BTS500801TEAAUMA1 - 10A Smart High-Side Switch | Infineon PROFET
The Infineon BTS500801TEAAUMA1 is a single-channel 10 A smart high-side power switch housed in a PG-TO252-5-11 (DPAK-5) surface-mount package, built around an N-channel vertical power MOSFET with integrated charge pump. Designed as a Classic PROFET 12 V device, it delivers 10 A continuous load current with a typical on-state resistance of 10 milliohms, providing embedded protective functions for automotive and industrial loads. A high-side switch (also called a high-side driver) is a semiconductor switch placed between the positive supply rail and the load, in contrast to a low-side switch that sits between the load and ground. Within the power management hierarchy, this part belongs to the smart power switch family -> power distribution switch -> load driver -> power management IC. Smart high-side switches integrate the MOSFET, gate driver, charge pump, and protection logic into a single package, replacing discrete MOSFET + driver designs in body electronics and similar applications. Key features include a 12 V nominal operating supply (4.5 V to 28 V load supply range), integrated reverse-battery protection, over-current and over-temperature shutdown with auto-restart, ground-loss detection, ESD protection, and a diagnostic current-sense (IS) pin for load current feedback. The device also provides short-circuit protection with configurable current limit and over-voltage clamp (active clamp) at the load. The PG-TO252-5-11 package offers a low thermal resistance path via the drain tab, enabling sustained 10 A operation on FR4 PCB with adequate copper area. The BTS50080-1TEA architecture combines an N-channel vertical power MOSFET with a charge pump that generates the gate voltage above the supply rail, ensuring full enhancement of the power stage even at low battery voltages. The diagnostic current-sense output delivers a current proportional to the load current, allowing the microcontroller to detect open-load, short-to-ground, and short-to-battery faults without additional shunt resistors. Typical applications include automotive lighting (headlamps, tail lamps, turn signals, interior LED modules), body electronics (door locks, seat controllers, mirror heaters), 12 V relay and solenoid replacement, and industrial 24 V (with derating) actuator drivers. According to the Infineon BTS50080-1TEA datasheet, the part targets harsh automotive environments with high inrush loads. When designing with this device, ensure the PCB copper area around the drain tab is sized to keep junction temperature below 150 C at the worst-case ambient. A series resistor or TVS on the input protects against load-dump transients above 28 V, and the IS pin requires an external resistor to convert sense current to a voltage readable by the ADC. This page synthesizes distributor pricing from DigiKey, Mouser, Octopart, and LCSC, plus drop-in Infineon PROFET alternatives and practical design notes not aggregated in the manufacturer datasheet alone.
BTS50101EKBXUMA1 - 10A Smart High-Side Switch | Infineon PROFET
The Infineon BTS50101EKBXUMA1 is a single-channel 10 A smart high-side power switch built on Infineon's Smart6 technology, housed in a PG-DSO-14-47 EP (exposed pad) surface-mount package. The device integrates an N-channel vertical power MOSFET with charge pump, offering a typical on-state resistance of 16 mĪ© (datasheet headline: 20 mĪ© maximum) and a continuous load current rating of 10 A at an operating voltage range up to 28 V. A high-side power switch (also called a high-side driver or PROFET) is a semiconductor device that controls a load connected between the switch output and ground, in contrast to a low-side switch which sits between the load and ground. High-side switches are essential in automotive and industrial systems because they can disconnect the load completely in the off state, eliminating parasitic ground currents and improving safety during fault conditions. Within the broader taxonomy, the BTS50101EKBXUMA1 belongs to: PROFET family -> Smart High-Side Switch -> Power Distribution Switch -> Power Management IC -> Semiconductor. Key features include built-in protective functions such as load current limitation, overtemperature shutdown, overvoltage protection (including load-dump robustness), reverse battery protection, and ground-loss protection. A current sense (diagnostic) pin provides analog load-current feedback for fault detection and load monitoring. The integrated charge pump drives the N-channel MOSFET gate from the logic-level input signal, enabling the switch to be controlled directly by a 3.3 V or 5 V microcontroller GPIO. Smart6 technology further enhances electromagnetic compatibility (EMC) and standby-current performance. Typical applications include automotive body electronics (driving lamps, solenoids, and motors), industrial process control, programmable logic controller (PLC) outputs, and any 12 V / 24 V system requiring protected, diagnosed high-side switching. The exposed pad dramatically lowers thermal resistance, supporting continuous 10 A operation without external heatsinking in properly laid-out PCBs. Design consideration: maintain a copper pour of at least 6 cmĀ² on the exposed pad to keep junction temperature within safe limits at full load. The diagnostic pin output is ratiometric ā calibrate sense resistor values against the datasheet's kILIS factor to convert sense current to actual load current. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found on a single manufacturer page.
BTS5014SDAAUMA1 - 6A Smart High-Side Power Switch | Infineon
The Infineon BTS5014SDAAUMA1 is a one-channel smart high-side power switch built on an N-channel vertical power MOSFET with charge pump, housed in a PG-TO252-5-11 (DPAK-5) surface-mount package. It delivers up to 6A nominal load current with embedded protective functions including current limiting, over-temperature shutdown, and over-voltage clamp, making it suitable for automotive and industrial 12V/24V load driving applications. Key specifications include an operating supply range up to 28V nominal (with load-dump tolerance to 41V typical), very low standby current, and proportional load current sensing via the IS pin. The device integrates a charge pump that drives the gate of the N-channel MOSFET above the battery rail, enabling true high-side switching without the cost of a P-channel device, and provides diagnostics such as fault feedback and open-drain status output. A high-side switch (HSS) is a power distribution IC that connects a load (lamp, solenoid, motor, heater) to the positive battery rail under microcontroller control while providing on-chip protection. Compared with discrete MOSFET plus fuse approaches, integrated smart switches reduce PCB area, eliminate the external fuse, and provide programmable current limits plus fault telemetry to the ECU. They sit within the broader power management IC hierarchy as load drivers, distinct from voltage regulators that maintain a constant rail. The BTS5014SDA family is fabricated in Infineon's automotive-qualified SMART7 process technology, which combines the power MOSFET, charge pump, control logic, and ESD protection on a single die. This monolithic integration ensures consistent RDS(on) and protection behavior across the full automotive temperature range of -40C to +150C junction, and supports PPAP documentation for OEM tier-1 use. Typical applications include automotive body electronics (lighting, door locks, seat heaters), industrial 24V PLC output modules, and any 12V/24V load that requires resettable over-current protection rather than a one-shot fuse. The current sense output enables closed-loop load monitoring for bulb-out detection or wire-break diagnostics. A recommended design tip is to place a reverse-polarity protection device (Schottky diode or P-FET) on the supply line, since the BTS5014SDA does not include reverse-battery blocking internally. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not consolidated in the manufacturer datasheet.
BTS5016SDAAUMA1 - 5.5A Smart High-Side Switch | Infineon
The Infineon BTS5016SDAAUMA1 is a single-channel, N-channel vertical power MOSFET smart high-side switch rated for 5.5 A continuous load current in a PG-TO252-5-11 (DPAK-4 leads + tab) surface-mount package. Part of Infineon's Classic PROFETā¢ 12V family, it integrates an N-channel vertical power MOSFET with charge pump, current-controlled input pin, load current sense output, Reversaveā¢ reverse-polarity protection, very low standby current, fast demagnetization of inductive loads, stable behavior at under-voltage, and improved EMC. The device is qualified for 12 V automotive loads including lamps, solenoids, and relay drivers. A high-side power switch is a semiconductor switch placed between the supply rail and the load; the switch connects the load to Vbat when activated, allowing the microcontroller ground-referenced logic to control it directly. Smart high-side switches add diagnostic feedback (load current sense) and protective functions (overcurrent, overtemperature, short-circuit, overvoltage, and reverse battery), eliminating the discrete fuse + relay + freewheeling diode + current-sense resistor chain traditionally used in body-electronics and powertrain ECUs. BTS5016SDAAUMA1 belongs to the broader category of protected MOSFET switches, hierarchically a sub-family of Power Distribution Switches within Power Management ICs. Key features include 5.5 A nominal load current, integrated current sense, very low standby current for quiescent-sensitive body modules, current-controlled input pin for direct MCU GPIO drive, fast demagnetization of inductive loads, Reversaveā¢ reverse-polarity protection without external blocking diode, stable operation at under-voltage, and RoHS-compliant Green Product construction. The PG-TO252-5-11 DPAK package with exposed tab provides low thermal resistance (~50 C/W typical on 2 oz copper, 1 cmĀ²) for dissipating IĀ²R losses during high-current switching. Internally, the BTS5016SDAAUMA1 uses Smart SIPMOS chip-on-chip technology that stacks the control IC on top of the vertical power MOSFET die, sharing the same package substrate. The charge pump generates the Vgs above Vbat needed to enhance the N-channel MOSFET fully, while diagnostic current-mirror cells feed the IS pin with a fraction of the load current (typically 1/2000 ratio) for the MCU's ADC to read back load health and detect open/short conditions. Typical applications include automotive lighting (headlamps, tail lamps, turn signals, interior lighting), 12 V relay and solenoid drivers, body control modules, powertrain auxiliary outputs, and any 12 V DC load requiring diagnostic feedback and integrated protection. When designing with this part, ensure the load's inrush current is below the part's inrush rating (typically 10x nominal for short pulses), use proper PCB thermal layout with adequate copper area on the tab, and add an external TVS or capacitor on the output if long inductive wire harnesses are present.
BTS50301EJAXUMA1 - 30mĪ© Smart High-Side Switch 5A 28V | Infineon
The Infineon BTS50301EJAXUMA1 is a 30 mĪ© single-channel Smart High-Side Power Switch (PROFET) rated for 5 A continuous load current and 28 V nominal supply voltage, housed in a PG-DSO-8-43-EP package. Built on an N-channel vertical power MOSFET with integrated charge pump, the device provides 1:1 power switching for resistive, inductive, and capacitive loads in automotive and industrial environments. A Smart High-Side Power Switch, also called a PROFET (Protected FET), is a power distribution switch that sits between the supply rail and the load, replacing discrete MOSFETs, fuses, and relay circuits. It belongs to the power distribution switch category within Power Management ICs, and integrates protection, diagnostic feedback, and PWM capability into a single SMD device. Compared to a discrete N-MOSFET plus discrete fuse design, a PROFET reduces PCB area by 60-80 percent and provides deterministic fault handling per the AEC-Q100 automotive reliability standard. Key features include an on-state resistance (RDS(on)) of 30 mĪ© typical at 25 Ā°C, a 5 V to 28 V operating supply range, integrated reverse-battery protection up to -28 V, and built-in load current sensing with a proportional IS pin output. The device offers diagnostic feedback through the INH and DEN pins, supports PWM frequencies up to 1 kHz for dimming or speed control, and includes overtemperature, overcurrent, short-circuit, and overvoltage clamp protection. The PG-DSO-8-43-EP exposed-pad package delivers a junction-to-ambient thermal resistance of approximately 36 K/W on a standard 1s2p FR4 board. The BTS50301EJAXUMA1 architecture combines a vertical DMOS output stage, charge-pump gate driver, bandgap-referenced protection comparators, and a current-mirror sense element. The sense current (kILIS ratio) typically runs 1:3300 to 1:6600 of the load current, enabling accurate fault detection without intrusive shunt resistors. Reverse-battery protection is achieved by substrate-switching techniques rather than an external diode, minimizing voltage drop and power dissipation. Typical applications include automotive body electronics (door modules, seat controllers, mirror adjusters, lighting), industrial PLC outputs, 24 V truck and bus power distribution, and any system requiring protected 12 V or 24 V load driving. The device is particularly suited for applications where fault reporting back to a microcontroller is mandatory, since the IS pin provides analog load-diagnostics in real time. When designing with the BTS50301EJAXUMA1, ensure the input supply is decoupled with at least 100 nF close to the Vbb pin and provide adequate copper area for thermal dissipation at high continuous currents. The DEN and INH pins must be driven per the timing diagram in the manufacturer datasheet; floating the INH pin disables the channel. This page synthesizes distributor pricing, drop-in alternative part numbers, application reference designs, and practical design notes that complement - but do not replace - the manufacturer datasheet for the BTS50301EJAXUMA1.
BTS51202EKAXUMA1 - 120 mĪ© Dual Smart High-Side Switch | Infineon
The Infineon BTS51202EKAXUMA1 (BTS5120-2EKA) is a 120 mĪ© dual-channel Smart High-Side Power Switch built on Infineon's Smart6 technology, housed in a PG-DSO-14-40-EP (14-pin SOIC with exposed pad) package. The device integrates two N-channel vertical power MOSFETs with charge pump, providing protective functions and diagnosis for each channel. It is qualified for automotive applications and designed to drive lamps up to 1Ć10W as well as LEDs in harsh automotive environments. What is a Smart High-Side Power Switch? A high-side power switch is a semiconductor device that controls current flow between a load and the positive supply rail, switching on the high (supply) side of the load rather than the low (ground) side. Smart high-side switches integrate a power MOSFET with a charge pump, gate driver, and protection/diagnostic features into a single IC. This topology belongs to the broader family of power distribution switches, which sit within the power management IC category and ultimately the semiconductor device hierarchy. By integrating protection locally, smart high-side switches replace discrete MOSFETs, gate drivers, fuses, and discrete protection circuitry, reducing PCB area and improving reliability. Key features of the BTS51202EKAXUMA1 include a typical on-state resistance of 120 mĪ© per channel, a continuous output current rating of 2A per channel (typical 2.5A), and an operating voltage range from 8V to 18V (suitable for 12V automotive systems). The device integrates over-current, short-circuit, over-temperature, over-voltage, under-voltage lockout, and reverse-battery protection. An integrated charge pump drives the N-channel MOSFET gates for low-RDS(on) operation, and a status/diagnostic feedback pin reports fault conditions to the host MCU. The BTS5120-2EKA uses Infineon's Smart6 process technology, combining vertical power MOSFETs with on-chip CMOS control logic. The charge pump generates the gate-boost voltage required to fully enhance the N-channel MOSFETs from a 12V supply, achieving the low 120 mĪ© on-resistance. Each channel operates independently with separate input control and diagnostic feedback, enabling per-channel fault handling and load management. Typical applications include automotive body electronics (e.g., lighting control, seat heating, mirror adjust), LED driver modules, HVAC blower control, and 12V power distribution in vehicles. The PG-DSO-14-EP exposed-pad package provides low thermal resistance for dissipating the ~1.8W maximum power under fault or steady-state load conditions. The reverse-battery protection eliminates the need for an external reverse-polarity diode, reducing BOM cost. When designing with this part, observe the maximum junction temperature of 150Ā°C and ensure sufficient copper area on the PCB beneath the exposed pad for thermal dissipation. The status feedback is open-drain and requires a pull-up resistor. Fault conditions should be debounced in software to avoid nuisance trips during inrush events such as cold lamp filaments. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found on the manufacturer datasheet alone.