Power MOSFET Drivers
Products (426)
1EBN1001AEXUMA1 - 15A Isolated Gate Driver Booster | Infineon EiceDRIVER™
The Infineon 1EBN1001AEXUMA1 is an EiceDRIVER™ Boost isolated single-channel IGBT/MOSFET gate driver booster delivering peak source/sink current of ±15 A in a 14-pin PG-DSO-14-43 package (DSO EP T&R), qualified to AEC-Q100 for automotive motor-drive applications above 10 kW. It is specified as a 2-output driver IC with separate turn-on and turn-off paths, very fast active-clamping reaction time, ASC input, and active-clamping disable, supporting 400 A-class switching stages in traction inverters. An IGBT/MOSFET gate driver booster is an analog power IC placed between an isolated gate driver (such as the Infineon EiceDRIVER™ 1ED family) and a high-current power switch. Its role in the system hierarchy is: gate driver booster -> gate driver -> IGBT/MOSFET -> power inverter. The booster multiplies the source/sink current capability of the primary driver so that large module gate capacitances (often >100 nC) can be charged and discharged quickly, reducing switching losses and improving PWM fidelity at high dV/dt. Key differentiating features include ±15 A peak output current, integrated active-clamping for Vce monitoring, separate source/sink outputs to tune turn-on and turn-off gate resistors independently, AEC-Q100 qualification, and automotive-grade construction. The device supports very fast short-circuit protection reaction time and an ASC (Active Short Circuit) input signal path tailored to functional-safety requirements in EV traction inverters. Architecturally, the 1EBN1001AEXUMA1 uses a complementary CMOS output stage with a low-inductance package design that minimizes voltage overshoot at the gate-emitter loop. The exposed pad (DSO EP) provides a low thermal resistance path that dissipates gate-charge power without derating switching frequency. The PG-DSO-14-43 footprint also keeps the high-current loop physically tight, which is critical when driving 600 V/750 V IGBT modules in three-phase inverter bridges. Typical applications include EV traction inverters (above 10 kW), industrial servo drives, on-board chargers, DC-DC converters for xEV powertrains, and high-power industrial motor drives using IGBT or SiC MOSFET modules. In each topology, the booster sits downstream of the galvanic-isolated primary driver and upstream of the power switch. Design tip: always place the booster within 2 cm of the power-module gate terminals to keep the gate-loop inductance below 5 nH. Estimate gate-drive power Pgate = Qg × Vge × fsw and verify the exposed-pad PCB copper area satisfies the thermal budget before committing to the layout. This page synthesizes distributor stock data, AEC-Q100 drop-in alternatives, and practical booster-layout notes that supplement the manufacturer datasheet, giving EV power engineers an actionable single-page reference.
1ED020I12B2XUMA1 - 1200V Isolated Gate Driver, 2A, DESAT | Infineon
The Infineon 1ED020I12B2XUMA1 is a galvanically isolated single-channel IGBT gate driver IC delivering up to 2 A peak output current in a PG-DSO-16-15 wide-body package. Designed for 1200 V class IGBTs and SiC MOSFETs, it integrates 4500 Vrms magnetic isolation (coreless transformer), DESAT short-circuit protection, an active Miller clamp, and separate source/sink outputs. According to Infineon datasheet v02_02, the device operates from a unipolar 15 V supply or bipolar ±8 V/15 V rails, suiting both industrial and renewable energy inverter designs. An IGBT gate driver is a specialized power-management IC that translates low-power logic-level PWM signals from a microcontroller or DSP into the high-current, high-voltage drive required to switch the gate of an insulated-gate bipolar transistor (IGBT). Isolated gate drivers add galvanic isolation between the low-voltage control domain and the high-voltage power stage, protecting the controller from high dV/dt transients and ground-potential differences. The 1ED020I12-B2 family targets the gate driver -> driver IC -> power management IC -> semiconductor hierarchy, and is widely used where 1200 V switches are switched at frequencies from a few kHz up to several hundred kHz. Key specifications include 2 A typical source/sink output current, 35 ns typical propagation delay, ±5 ns channel-to-channel matching (single-channel part), 4500 Vrms isolation per UL 1577, and an integrated Miller clamp FET capable of sinking 2 A. The DESAT detection threshold is programmable via an external resistor and blanking capacitor, supporting IGBT Vce(sat) monitoring at typical 7 V threshold. The wide-body 300-mil DSO-16-15 package provides 8 mm creepage between primary and secondary sides, satisfying reinforced isolation requirements per IEC 60747-17. Architecturally, the 1ED020I12-B2 uses Infineon's coreless-transformer (CT) isolation technology, transmitting PWM and fault signals across a galvanic barrier using differential pulse-edge encoding. This avoids the wear-out mechanisms of optocoupler LEDs while meeting UL 1577 and IEC 60747-17 reinforced insulation targets. The on-chip DESAT comparator monitors Vce of the driven IGBT during the on-state; if saturation voltage exceeds the programmed threshold (typical 7 V) for the blanking time, the driver asserts the fault output and latches off the gate, protecting the switch from short-circuit destruction. Typical applications include three-phase solar inverters, industrial motor drives (servo and VFD), UPS systems, and induction-heating power stages. In each of these, the part drives 1200 V IGBT half-bridge modules where reinforced isolation, DESAT protection, and Miller clamping directly translate into higher system reliability and faster short-circuit turn-off. Engineers also deploy it in SiC MOSFET half-bridge and full-bridge topologies up to the part's 1200 V absolute maximum rating. When designing with the 1ED020I12-B2, select the bootstrap supply carefully: a 100 nF X7R bypass is recommended on VCC1/VCC2, and the Miller-clamp pin must be tied directly to the IGBT gate via a low-inductance trace. Program the DESAT blanking time to at least 1 µs to avoid false trips during IGBT turn-on. The active-high fault output is open-drain and should be pulled up to VCC1 with a 10 kΩ resistor. According to Infineon datasheet v02_02, the part is rated for -40 °C to +125 °C operating junction temperature and is MSL-3 rated at 260 °C peak reflow. This page synthesizes distributor pricing from DigiKey/Mouser/LCSC, drop-in alternatives including the F2 variant and cross-brand equivalents, and practical design notes not collected in a single place in the manufacturer datasheet.
1ED020I12FA2XUMA2 - 2A Isolated Gate Driver | Infineon
The Infineon 1ED020I12FA2XUMA2 is a single-channel, galvanically isolated IGBT gate driver IC delivering 2 A rail-to-rail output current in a PG-DSO-20 surface-mount package with 4500 Vrms isolation. It uses Infineon's coreless transformer (CT) isolation technology to provide reinforced insulation between the low-voltage control side and the high-voltage power stage. The driver is qualified to automotive standards and targets operation at high ambient temperatures typical of EV power-train environments. A galvanically isolated gate driver is a specialized power-management IC that sits between a low-voltage microcontroller or DSP and the gate of a high-voltage switching transistor such as an IGBT, SiC MOSFET, or GaN HEMT. Its role in the broader signal-chain hierarchy is: gate driver -> power transistor driver -> power management IC -> semiconductor. By providing both logic-level translation and reinforced safety isolation in one package, isolated gate drivers eliminate the need for optocouplers or discrete bootstrap supplies in many topologies, simplifying PCB layout and improving long-term reliability. Key features of the 1ED020I12FA2 include integrated protection functions such as DESAT detection, active Miller clamp, and under-voltage lockout (UVLO) for both the primary and secondary sides. The 2 A peak source/sink output stage drives IGBT modules directly without external buffer stages. Typical propagation delay is around 150 ns with excellent channel-to-channel matching for half-bridge synchronization, while the coreless transformer delivers 100 kV/µs common-mode transient immunity (CMTI) - critical for SiC switching edges above 50 V/ns. Architecturally, the device uses a differential CT-based isolation barrier that replaces the LED-photodiode link of optocouplers. This eliminates opto-degradation concerns (CTR drift over temperature and age) and supports operation from -40 °C to +125 °C. The integrated 2 A output stage reduces BOM count by removing the need for an external booster, and the wide VCC2 range (typically up to 25 V) supports both 15 V and 18 V gate-drive rails used by SiC and IGBT power modules. Typical applications include automotive traction inverters, onboard EV chargers, industrial servo drives, solar string inverters, and uninterruptible power supplies. The automotive qualification (AEC-Q100) makes it particularly suitable for xEV main inverters where reinforced isolation is mandatory per IEC 60664. When designing with the 1ED020I12FA2, ensure the DESAT blanking time is properly tuned to the power device's switching characteristics to avoid false triggering during normal turn-on transients. The exposed pad of the PG-DSO-20 must be soldered to a sufficiently large copper pour for thermal dissipation of the 2 A gate-charge pulses. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
1ED3122MC12HXUMA1 - 10A Isolated Gate Driver, 5.7kV | Infineon
The Infineon 1ED3122MC12HXUMA1 is a 10A single-channel isolated gate driver with coreless transformer isolation, housed in a PG-DSO-8-66 package (300-mil DSO-8). It supports an output current of 10A source / 9A sink, 5.7 kVrms galvanic isolation, and is designed to drive IGBTs and MOSFETs up to 35V gate drive supply. An isolated gate driver is a power-semiconductor interface IC that provides galvanic isolation between a low-voltage control domain (logic-level PWM signals from an MCU or DSP) and a high-voltage power domain (the gate of a switching transistor). Within the broader taxonomy, isolated gate drivers belong to gate drivers -> driver ICs -> power management semiconductors -> discrete and module semiconductors. They sit in the signal chain immediately before the power switch and are essential whenever the controller and the switch must operate at different ground potentials, as in motor drives, solar inverters, and industrial welding equipment. Key differentiating features of the 1ED3122MC12HXUMA1 include active Miller clamp circuitry that prevents parasitic turn-on of the power switch during fast dV/dt events, short-circuit clamping to protect the gate oxide during desaturation events, and undervoltage lockout (UVLO) for both primary and secondary sides. The integrated bootstrap diode option and 30 ns typical propagation delay enable high-frequency switching up to several hundred kHz with deterministic timing. The device uses Infineon's coreless transformer (CT) isolation technology, which delivers 5.7 kVrms isolation rating and 8 kVpk surge withstand, exceeding many optocoupler-based alternatives in transient immunity and long-term reliability. Two output variants (inverting and non-inverting) are available within the same PG-DSO-8 footprint family, simplifying PCB layout reuse between complementary half-bridge channels. Typical applications include driving IGBT modules in industrial motor control inverters, SiC MOSFET half-bridges in EV traction auxiliary converters, and IGBT-based three-level NPC topologies in solar string inverters. The wide 8V to 35V gate-drive supply range covers standard 15V and 20V gate-drive rails for both IGBTs and SiC MOSFETs. When designing with this part, observe the creepage and clearance requirements of the PG-DSO-8-66 wide-body package to maintain the rated isolation, and place the bootstrap capacitor as close as possible to the VCC and VB pins to minimize parasitic inductance in hard-switched topologies.
1ED3124MC12HXUMA1 - 14A Isolated Gate Driver, 5.7kV | Infineon
The Infineon 1ED3124MC12HXUMA1 is a single-channel isolated gate driver IC rated for 14 A source/sink output current with 5.7 kV galvanic isolation, housed in a PG-DSO-8 (DSO-8) package. It supports supply voltages from 10.5 V to 35 V, provides 90 ns propagation delay, and delivers 15 ns rise / 30 ns fall times for fast switching of IGBTs and SiC MOSFETs in half-bridge power topologies. An isolated gate driver is a power-semiconductor interface IC that provides galvanic isolation between a low-voltage controller (MCU, DSP, FPGA) and the high-voltage gate of a power switch. Isolation gate drivers sit in the hierarchy: gate driver -> driver IC -> power management IC -> semiconductor. They use either magnetic (coreless transformer) or optical coupling to break ground loops, reject dv/dt-induced errors, and protect low-voltage logic from catastrophic high-side transients in bridge circuits. Coreless-transformer (CT) topology, used here, replaces bulky optocouplers with on-chip micro-transformer coils, enabling tighter timing, smaller footprint, and longer operational life. Key features of the 1ED3124MC12HXUMA1 include 13.5 A / 14 A typical source/sink current for directly driving large IGBT modules without external booster stages, integrated Under-Voltage Lockout (UVLO) for both primary and secondary sides, short-circuit protection via DESAT detection, and 8 kV peak transient overvoltage tolerance on the isolation barrier. The CT-based isolation achieves 5.7 kV RMS withstand voltage per IEC 60747-17, with reinforced insulation rated for 800 V working voltage. Architecturally, the device integrates a coreless-transformer isolation barrier, an on-chip encoder/decoder for robust data transmission, and separate gate-drive output stages capable of 14 A peak. This combination of high drive strength, short propagation delay (90 ns typical), and tight delay matching makes it especially suitable for high-frequency SiC MOSFET applications where conventional optocouplers introduce excessive timing skew. Typical applications include industrial drives, solar inverters, UPS systems, EV charging stations, and welding power supplies. In each, the 1ED3124 drives the high-side or low-side switch of a half-bridge, providing the level-shifting and isolation needed between the control domain and the power stage. When designing with this driver, ensure adequate local bypassing on both VCC1 (primary) and VCC2 (secondary) rails, with 1 µF / 100 nF ceramic pairs placed within 5 mm of the supply pins. The DESAT pin requires an external high-voltage blocking diode and blanking capacitor; consult the manufacturer datasheet for component values matching your IGBT module. This page synthesizes distributor pricing from six sources, drop-in pin-compatible alternatives, and practical design notes that complement, rather than duplicate, the manufacturer datasheet.
1ED3124MU12HXUMA1 - 14A Isolated Gate Driver | Infineon EiceDRIVER
The Infineon 1ED3124MU12HXUMA1 is a single-channel isolated gate driver IC delivering 14 A typical peak output current (sinking and sourcing) in a PG-DSO-8-66 wide-body package with >8 mm creepage distance. It provides 5.7 kV (rms) galvanic isolation per UL 1577 and supports up to 1200 V working voltage, targeting IGBT, MOSFET and SiC MOSFET discrete switches and modules up to the 2300 V class. The X3 compact family member integrates coreless transformer isolation and offers a propagation delay of approximately 90 ns. An isolated gate driver is a semiconductor device that provides galvanic isolation between the low-voltage control side (MCU, DSP, or FPGA) and the high-voltage power switch side. It belongs to the hierarchy: gate driver -> driver IC -> power management IC -> semiconductor. Isolation is mandatory in high-voltage power converters because the control logic operates at safe extra-low voltage while the power switches commutate at hundreds or thousands of volts; without isolation, fault transients would destroy the controller. The 1ED31xx family uses Infineon's coreless transformer (CT) technology to transfer both the gate signal and isolated power across the barrier. Key features include separate source and sink output pins for independent turn-on and turn-off gate path optimization, a 10.5 V undervoltage lockout (UVLO) threshold matched to common 12 V gate-drive rails, 40 kV/us minimum common-mode transient immunity (CMTI), and built-in short-circuit clamping plus active Miller clamp support (the 1ED3124 variant specifically offers separate output versus the 1ED3114 which provides active Miller clamp). The wide-body DSO-8 package provides the creepage and clearance required by IEC 60664-1 for reinforced insulation at 1200 V working voltage. Typical applications include industrial variable-frequency drives (VFDs), solar string inverters, EV traction and onboard chargers, UPS systems, induction heating, welding power supplies and three-phase servo drives. The device is qualified per Infineon's industrial grade reliability profile (-40C to +125C) and is part of the EiceDRIVER Compact family, designed to pair with Infineon TRENCHSTOP IGBT7 and CoolSiC MOSFET discrete and module platforms. When designing with this driver, observe the recommended gate resistor placement (separate Rg_on and Rg_off) and ensure the bootstrap or isolated supply rail provides at least 1 uF of local decoupling on both VCC and VBS rails. Designers should also verify PCB creepage and clearance to comply with the end-product safety standard (IEC 61800-5-1 for drives, IEC 62109 for solar inverters). The wide-body package is footprint-compatible across the 1ED31xx Compact family (1ED311x, 1ED312x, 1ED313x variants), enabling PCB reuse across multiple output configurations. This page synthesizes distributor pricing, drop-in same-family alternatives from the 1ED31xx Compact family, cross-brand equivalents, and practical design notes not found on a single manufacturer datasheet.
1ED3125MU12FXUMA1 - 14A Isolated Gate Driver | Infineon EiceDRIVER
The Infineon 1ED3125MU12FXUMA1 is a single-channel isolated gate driver IC rated for 14 A peak source/sink drive current, housed in a PG-DSO-8 package with 3000 Vrms galvanic isolation. It belongs to Infineon's EiceDRIVER Compact 1ED31xx family and is engineered to drive IGBTs and Si/SiC MOSFETs in industrial drives, solar inverters, EV charging, and welding power stages. The driver integrates an active Miller clamp, short-circuit clamping, and active shutdown to maintain a safe OFF-state when the output side loses its supply. An isolated gate driver is a specialized driver IC that provides galvanic isolation between a low-voltage control domain (logic-level PWM from an MCU or DSP) and a high-voltage power domain (gate of a switching power device). Isolated drivers fall within the gate-driver hierarchy: gate driver -> power management -> semiconductor -> discrete switch interface. They are essential where the control logic must remain safely referenced to chassis ground while the switch node floats at hundreds or thousands of volts and switches at kHz-to-MHz dV/dt rates. Key specifications include 14 A peak output current, 90 ns typical propagation delay, 3000 Vrms isolation voltage, an active Miller clamp to prevent parasitic turn-on, and short-circuit clamping to protect the driven switch during fault events. The wide driver supply range supports both 12 V and 15 V gate-drive rails commonly used for IGBTs and SiC MOSFETs. Built-in undervoltage lockout (UVLO) for the output side ensures the switch cannot operate in its linear region during cold-start or brown-out. The 1ED3125MU12F (base part number) uses coreless transformer isolation technology, achieving reinforced insulation while keeping propagation delay tightly matched between turn-on and turn-off (typically within 25 ns). This matched delay is critical for high-frequency half-bridge and full-bridge topologies where duty-cycle distortion from delay mismatch would otherwise create DC-bias and thermal runaway in transformers. Typical applications include industrial motor drives ( servo, VFD ), solar string and central inverters, EV onboard chargers and DC-DC converters, induction heating, UPS systems, and welding power supplies. The 14 A drive strength allows direct switching of large IGBT modules without an external booster stage, reducing BOM cost and board area. When designing with this driver, place the bootstrap or isolated supply capacitor within 5 mm of the VCC and VBS pins to minimize parasitic inductance. Keep the gate-drive loop area below 50 mm² to control ringing, and route the Miller-clamp return directly to the power-device source/emitter Kelvin pin rather than the driver ground. This page synthesizes distributor pricing, pin-compatible drop-in alternatives, and practical PCB-layout design notes not found in the manufacturer datasheet alone.
1ED3127MU12FXUMA1 - 10A Isolated Gate Driver 3kV | Infineon
The Infineon 1ED3127MU12FXUMA1 is a single-channel 10 A isolated gate driver IC designed for driving IGBTs, MOSFETs, and SiC power switches in high-voltage half-bridge and totem-pole topologies. It delivers 10 A peak source/sink output current, 3000 Vrms galvanic isolation via coreless transformer technology, and operates from a 12 V to 35 V supply rail. The device is housed in a PG-DSO-8-72 (SOIC-8) surface-mount package with 5 mm x 4 mm footprint and 9 A typical gate drive capability. An isolated gate driver is a critical interface between low-voltage control logic and high-voltage power semiconductors, providing galvanic isolation (typically several kVrms) and signal-level translation while delivering high peak gate currents to rapidly charge and discharge power-transistor input capacitances. Within the broader power electronics hierarchy, isolated gate drivers sit between MCU/GPU controllers and discrete power MOSFETs/IGBTs, enabling safe, compact high-density power-conversion systems across industrial drives, renewable energy inverters, and electric-vehicle traction systems. Key features of the 1ED3127MU12FXUMA1 include 15 ns typical propagation delay, 30 ns delay matching between outputs, integrated Miller clamp for MOSFET parasitic-Cdg suppression, under-voltage lockout (UVLO) protection for both primary and secondary sides, and short-circuit protection (DESAT). The driver supports switching frequencies up to several hundred kHz, enabling efficient high-frequency power conversion in SiC and IGBT applications. Magnetic coupling isolation provides 3 kVrms reinforced isolation per IEC 60747-17. The 1ED3127MU12FXUMA1 uses Infineon's coreless transformer (CT) isolation technology to achieve low EMI susceptibility and high common-mode transient immunity (CMTI), critical for high-switching-speed SiC MOSFETs. The two output stages source/sink 10 A peak, ensuring fast gate transitions that minimize switching losses in the driven power transistor. Internal under-voltage lockout (UVLO) on both VCC1 and VCC2 rails prevents operation in unsafe conditions. Typical applications include solar string inverters, industrial motor drives (servo and variable-frequency drives), EV onboard chargers and traction inverters, telecom DC-DC converters, and high-frequency resonant converters. The wide VCC2 range (12 V to 35 V) supports SiC MOSFETs (typically 18 V gate drive) and high-voltage IGBTs (15 V drive) from a single part. The 9 A continuous drive capability and 10 A peak make it suited for high-current discrete power devices as well as modules. When designing with this device, pay close attention to PCB layout - keep the gate-driver loop (VCC2 to OUT to gate-to-source to GND2 and back) minimal to avoid parasitic inductance that can cause ringing on the gate and unwanted turn-on. Place the VCC2 bypass capacitor (typically 1uF to 10uF ceramic) within 2 mm of the VCC2 pin and use a low-impedance ground return path to avoid disturbing the Miller clamp operation. This page synthesizes distributor pricing, datasheet pinout, drop-in alternatives from the same Infineon EiceDRIVER family, and practical design notes not found in a single distributor page.
1ED3142MC12HXUMA1 - 6A Isolated Gate Driver | Infineon EiceDRIVER
The Infineon 1ED3142MC12HXUMA1 is a single-channel, galvanically isolated gate driver from the EiceDRIVER X3 Compact family, delivering 6 A source and 6.5 A sink drive current with a typical propagation delay of 40 ns. Housed in a PG-DSO-8 (PG-LDSO-8-1) package, the part integrates a coreless transformer isolation barrier rated at 3000 Vrms working voltage, enabling robust high-side/low-side gate drive for IGBTs, MOSFETs, and SiC MOSFETs in compact 8-pin SMD layouts. What is an isolated gate driver? An isolated gate driver is a power-semiconductor interface IC that provides both signal-level shifting (logic-to-driver domain) and galvanic isolation between the low-voltage control domain (microcontroller, FPGA) and the high-voltage switching domain (IGBT/MOSFET/SiC half-bridge). It belongs to the broader family of gate driver ICs, which sits under power management and motor-drive hierarchies. Isolated drivers are essential when the switch node swings hundreds of volts and would otherwise violate the creepage/clearance and human-safety isolation requirements of an MCU. The 1ED3142MC12HXUMA1 features a coreless-transformer isolation technology, separate source/sink outputs, and a programmable output UVLO referenced to the secondary-side ground (GND2). Typical propagation delay is 40 ns, with rise/fall times of 20 ns, making it suitable for switching frequencies above 100 kHz. Per the manufacturer datasheet, the part supports high CMTI (Common-Mode Transient Immunity) operation required for fast-switching SiC MOSFETs at high dv/dt. The architecture combines an on-chip oscillator/rectifier that reconstructs the secondary-side supply from the primary-side high-frequency carrier, eliminating the need for an isolated DC-DC converter in low-power applications. This simplifies BOM count and reduces board area. The PG-DSO-8 package provides a wide-creepage lead frame suitable for reinforced insulation. Typical applications include industrial servo drives, photovoltaic string inverters, on-board EV chargers, telecom rectifiers, and welding power supplies. The 6 A peak drive strength and tight delay matching enable high-efficiency hard-switched and resonant topologies. The device's high CMTI is particularly valuable for SiC MOSFETs, where dv/dt can exceed 50 kV/μs. When designing with this part, place the bootstrap supply close to the driver and observe the minimum output UVLO threshold for the target SiC/IGBT. The two separate outputs (OUT, OUT_L) should be tied together at the gate with individual gate resistors if separate rise/fall-time control is desired. This page synthesizes distributor pricing, drop-in pin-compatible alternatives, and practical design notes beyond the manufacturer datasheet.
1ED3142MU12FXUMA1 - 6.5A Isolated Gate Driver SiC/IGBT | Infineon
The Infineon 1ED3142MU12FXUMA1 is a 6.5 A single-channel galvanically isolated gate driver IC with coreless transformer isolation rated at 2300 V (manufacturer datasheet) / 3000 Vrms (DigiKey catalog rating), housed in a PG-DSO-8-72 package with wide-body creepage and clearance suitable for high-side/low-side drive of SiC MOSFETs, IGBTs, and power MOSFETs. It delivers 6.5 A typical peak source/sink output current, supports up to 40 V absolute maximum output supply, and provides typical propagation delay of 42 ns enabling high-frequency switching. A galvanically isolated gate driver is a semiconductor device that provides both signal-level galvanic isolation and high-current gate drive capability for power switches such as MOSFETs, IGBTs, and SiC MOSFETs. In the system hierarchy, the gate driver sits between the low-voltage control MCU/digital controller and the high-voltage power stage, translating a logic-level PWM command into a high-current gate signal that charges and discharges the gate capacitance of the power switch. Isolated gate drivers are a subset of the broader power management IC family, and they are essential in any topology with a floating high-side switch (half-bridge, full-bridge) or where safety isolation between primary and secondary is mandated. Key features of the 1ED3142MU12FXUMA1 include integrated undervoltage lockout (UVLO) for the output-side supply, separate source and sink output pins enabling independent turn-on/turn-off strength tuning via external gate resistors, and desaturation (DESAT) protection for short-circuit detection on SiC MOSFETs and IGBTs. The part is designed as part of Infineon's EiceDRIVER family for fast switching of wide-bandgap devices. Architecturally, the 1ED3142MU12FXUMA1 uses Infineon's coreless transformer (CT) isolation technology to transmit PWM signals across an internal insulation barrier while rejecting common-mode transients. This eliminates the need for an external opto-coupler or pulse transformer. The driver output stage is implemented in a complementary BJT/MOSFET totem pole capable of 6.5 A peak current with controlled rise/fall times in the sub-10 ns range when properly decoupled. Typical applications include EV traction inverter gate drive, industrial motor drives, solar string inverters, UPS systems, and any high-density power converter requiring reinforced isolation. Designers should pair this driver with an isolated DC-DC bias supply (such as Infineon's EiceDCDC family) to power the output-side rail referenced to the source of the high-side switch. Watch the maximum junction temperature and ensure the PCB layout maintains adequate creepage across the package's wide-body footprint for safety compliance.
1ED3323MC12NXUMA1 - 5.7kV Isolated Gate Driver | Infineon
The Infineon 1ED3323MC12NXUMA1 is a single-channel 5.7 kVrms isolated gate driver IC with 8.5A/9A peak source/sink current capability, designed to drive IGBTs and SiC MOSFETs in high-voltage power conversion stages. It is housed in a PG-DSO-16-40 package and belongs to Infineon's EiceDRIVER F3 Enhanced (1ED332x) family, providing reinforced galvanic isolation between the low-voltage control side and the power stage. The 1ED3323MC12NXUMA1 integrates DESAT short-circuit protection, soft-off, and an integrated Miller clamp. An isolated gate driver is a power management IC that provides galvanic isolation and signal-level translation between a low-voltage controller (microcontroller, DSP, or FPGA) and the gate of a high-voltage power transistor. Isolated gate drivers belong to the broader class of power management ICs (gate drivers > driver ICs > power management ICs > semiconductor). They are essential in any system where a logic-level PWM signal must safely switch a power device referenced to a high-voltage or high-dV/dt node, such as IGBT inverters, SiC traction drives, photovoltaic converters, and industrial motor controls. The galvanic isolation barrier (typically coreless transformer or capacitive) protects the low-voltage domain from destructive high-voltage transients. Key features of the 1ED3323MC12NXUMA1 include 8.5A source / 9A sink peak gate-drive current, 5.7 kVrms galvanic isolation per IEC 60747-17, a wide 3.1V to 5.5V primary-side supply, 9V to 18V secondary-side driver supply, 85 ns typical propagation delay, DESAT-based short-circuit detection, soft turn-off to limit fault current overshoot, and an integrated Miller clamp. The driver also features under-voltage lockout (UVLO) on both primary and secondary sides to prevent driving a power device with insufficient gate voltage, which would otherwise cause high conduction losses. According to the Infineon datasheet, the PG-DSO-16-40 package provides a wide creepage distance suitable for 600V / 1200V class systems. The 1ED3323MC12NXUMA1 uses Infineon's coreless transformer (CT) isolation technology to achieve the 5.7 kVrms withstand voltage and >100 kV/µs common-mode transient immunity (CMTI). The internal architecture separates the galvanic barrier from the driver output stage, allowing the secondary side to deliver high peak currents at controlled rise/fall times to switch the power device efficiently. Compared with optocoupler-based gate drivers, the CT isolation provides tighter propagation delay matching, lower propagation delay skew, and longer operational lifetime. Typical applications include industrial motor drives (AC inverter drives for pumps, fans, and servo drives), photovoltaic string inverters and central solar inverters, EV onboard chargers and DC-DC converters, uninterruptible power supplies (UPS), induction heating, and SiC MOSFET-based traction inverters. In a 3-phase solar inverter, for example, six 1ED3323MC12NXUMA1 drivers can each be assigned to one switch position of the IGBT/SiC power module, providing the required high-side/low-side floating supply translation and short-circuit protection on every switching event. Designers should consult the Infineon application note on the EiceDRIVER F3 family for proper bootstrap supply design, DESAT blanking time selection, and PCB creepage/clearance layout recommendations. When designing with this driver, ensure that the secondary-side supply voltage (VCC2 - VEE2) stays within 9V to 18V for IGBTs or 12V to 18V (sometimes higher with negative VEE) for SiC MOSFETs. The DESAT blanking capacitor must be sized for the actual short-circuit transient of the chosen power module, and the Miller-clamp pin should be tied directly to the gate of the power device via a low-impedance path to prevent parasitic turn-on in half-bridge topologies. A minimum of 8 mm creepage and clearance must be maintained between primary and secondary PCB copper pours per IEC 60747-17 reinforced isolation requirements. This page synthesizes distributor pricing, datasheet-derived parametric data, cross-brand drop-in equivalents from the verified web data, and practical design notes for the 1ED3323MC12NXUMA1 isolated gate driver IC not found in a single manufacturer datasheet view.
1ED3890MC12MXUMA1 - 5.7kV Isolated Gate Driver, ±9A | Infineon
The Infineon 1ED3890MC12MXUMA1 is a 5.7 kVrms reinforced-isolated single-channel gate driver with ±9 A peak source/sink output current, I2C-configurable parameters, integrated DESAT short-circuit protection, and PG-DSO-16-28 package (16-pin wide-body DSO with 1500 V functional isolation tested up to 5.7 kVrms). It is designed for driving IGBTs, SiC MOSFETs, and high-voltage MOSFETs in industrial drives, solar inverters, EV traction, and welding power converters. The driver features reinforced galvanic isolation based on Infineon's coreless transformer technology, eliminating optocoupler aging and propagating-delay issues common in legacy photo-coupled drivers. An isolated gate driver is a power-semiconductor interface IC that provides a high-voltage barrier between a low-voltage controller (MCU, DSP, FPGA) and the gate of a switching power transistor. Isolated drivers sit in the power-management hierarchy above non-isolated gate drivers and below the digital control domain; they translate PWM logic-level signals across an isolation barrier while delivering high peak currents to rapidly charge and discharge the gate capacitance of large IGBT/SiC modules. The 5.7 kVrms isolation rating is the maximum allowable insulation withstand voltage and is selected per IEC 60747-17 for reinforced insulation in 600V/1200V class power converters. Key features of the 1ED3890MC12M include ±9 A peak gate-drive current (sufficient for switching 200 A-class IGBT modules in <100 ns), DESAT short-circuit detection with adjustable threshold and blanking time, Active Miller clamp to prevent parasitic turn-on in half-bridge configurations, and a programmable soft-turn-off (STO) on fault. I2C programmability provides access to DESAT threshold, DESAT blanking, gate-drive voltage levels, UVLO thresholds, and fault-clearing behavior, allowing a single IC to be repurposed across multiple platforms. Typical applications include industrial motor drives (servo, VFD), solar string and central inverters, EV onboard chargers and traction inverters, UPS systems, induction heating, and welding power supplies. When designing with this driver, carefully observe PCB creepage/clearance on the package; the PG-DSO-16-28 wide-body package provides the necessary 8 mm clearance for reinforced isolation, but external copper near high-voltage traces must still maintain adequate spacing. Always use a low-ESL bypass capacitor (100 nF X7R minimum) directly at VCC and VBS pins to handle the ±9 A peak transients without voltage collapse. This page consolidates distributor pricing, drop-in alternatives, and practical design notes for engineers evaluating the 1ED3890MC12MXUMA1 — content that goes beyond the manufacturer datasheet alone.
1ED44173N01BXTSA1 - 25V 2.6A Low-Side Gate Driver | Infineon
The Infineon 1ED44173N01BXTSA1 is a 25 V single-channel low-side non-inverting MOSFET gate driver with integrated fast over-current protection (OCP), fault reporting, and an enable pin, housed in a tiny 6-lead PG-SOT23 package. It delivers typical 2.6 A source and 2.6 A sink gate-drive currents, making it well-suited for driving power MOSFETs in switching converters up to several hundred kHz. A low-side gate driver is a type of gate driver IC that switches the gate of a low-side N-channel MOSFET between the system ground and the gate-drive supply. Gate drivers sit in the power management signal chain between a logic-level PWM controller (typically 3.3 V or 5 V CMOS) and a power MOSFET that requires a 10-15 V gate voltage for full enhancement. Low-side drivers like the 1ED44173 belong to the gate driver IC family under power management ICs and are essential for switch-mode power supplies, motor drives, and synchronous rectification stages where the controller cannot source enough current to charge the MOSFET's large gate capacitance quickly. Key features of the 1ED44173 include 4.5 V to 25 V VCC operating range, 4.5 V to 25 V OCP threshold range, an internal charge pump for 100% duty cycle operation, under-voltage lockout (UVLO), and a dedicated FAULT output that pulls low when over-current is detected. The device consumes approximately 0.4 mA quiescent current and provides a typical propagation delay below 100 ns for fast PWM response. Its non-inverting logic with TTL-compatible inputs allows direct connection to microcontrollers and DSPs. Architecturally, the 1ED44173 integrates a high-speed driver stage with a current-sense comparator on the SOURCE pin, eliminating the need for external OCP circuitry in many designs. The PG-SOT23-6 footprint (2.9 mm x 1.6 mm) makes it one of the smallest OCP-protected drivers available, enabling compact layouts in DC-DC bricks and BLDC motor control boards. Typical applications include synchronous rectification in isolated DC-DC converters, low-side driving of power MOSFETs in motor control, OR-ing FET controllers, and secondary-side synchronous rectifiers. Designers should place the device close to the driven MOSFET, use a 1 uF ceramic bypass capacitor on VCC, and follow the layout guidelines in the Infineon datasheet for proper OCP sense routing. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
1ED44175N01BXTSA1 - 25V 2.6A Low-Side IGBT Gate Driver | Infineon
The Infineon 1ED44175N01BXTSA1 is a 25 V single-channel low-side non-inverting gate driver IC for IGBTs and power MOSFETs, delivering typical 2.6 A source and sink currents in a compact 6-lead PG-SOT23-6-3 surface-mount package. Built on Infineon's proprietary latch-up-immune CMOS technology, this EiceDRIVER integrates over-current protection (OCP), an FAULT status output, and an enable function, enabling designers to combine a small gate driver and a discrete protection scheme in a single tiny footprint. A low-side gate driver is a power-management IC placed between a low-voltage control signal (typically 3.3 V or 5 V logic from a microcontroller) and the gate of a switching power transistor referenced to ground. Its role in the broader system hierarchy is: gate driver -> driver IC -> power management IC -> semiconductor. Low-side drivers are the simplest and most economical drivers and are widely used when the gate of the power device can be referenced to the same ground as the control logic, simplifying isolated power supply design. Key features of the 1ED44175N01BXTSA1 include 2.6 A typical source/sink drive current for fast switching, a wide logic-input threshold compatible with standard CMOS or LSTTL outputs, an integrated OCP comparator pin for current-sense feedback, an open-drain FAULT output for system diagnostics, and a dedicated EN pin for power sequencing. The non-inverting topology means the output follows the input logic level directly. The internal architecture uses a robust monolithic construction with a current buffer output stage optimized for high dV/dt immunity. The OCP function compares an external current-sense voltage against an internal reference, providing rapid fault response that helps protect the power switch from short-circuit conditions. The device operates from a single supply rail, simplifying PCB layout. Typical applications include low-side driving of IGBTs and MOSFETs in motor-control half-bridges, switch-mode power supply (SMPS) primary-side switches, induction-heating inverters, and general-purpose power converters where fault protection is required. It pairs naturally with Infineon IGBTs such as the IKD15N60RFATMA1 and CoolMOS MOSFETs. When designing with the 1ED44175N01BXTSA1, ensure the OCP sense resistor and reference network are properly scaled to the trip threshold and that the FAULT pin is correctly pulled up. The PG-SOT23-6-3 package has limited power dissipation, so for high-frequency high-current applications the thermal performance should be validated. This page synthesizes distributor pricing, drop-in SOT-23-6 alternatives, and practical design notes not found in the manufacturer datasheet.
1ED44176N01FXUMA1 - 25V 1-Channel Low-Side Gate Driver IC | Infineon
The Infineon 1ED44176N01FXUMA1 is a 25 V single-channel low-side non-inverting gate driver IC for MOSFET and IGBT power switches, housed in an 8-pin PG-DSO8 (SOIC-8) surface-mount package. It delivers typical 0.8 A source and 1.75 A sink drive currents with integrated over-current protection (OCP), ±5% OCP tolerance, fault reporting output, and an active-high enable pin. The driver operates from a 4.5 V to 25 V VCC supply range and is part of Infineon's EiceDRIVER family. A gate driver is an interface IC that sits between a low-power control signal (such as a microcontroller PWM output or PWM controller) and the high-current gate of a power MOSFET, IGBT, SiC, or GaN transistor. Gate drivers (hierarchy: gate driver -> driver IC -> power management IC -> semiconductor) provide level shifting, high drive current to rapidly charge/discharge the gate capacitance, and often integrate protection features. Low-side drivers reference the switch source to ground and are the simplest and most cost-effective topology for driving the low-side FET in a half-bridge, low-side switch, or synchronous-rectifier position. Key features of the 1ED44176N01FXUMA1 include: 0.8 A source / 1.75 A sink peak gate drive current, integrated DESAT-style OCP with ±5% tolerance, open-drain FAULT output for system-level diagnostics, an EN (enable) input for sequenced startup, CMOS/TTL-compatible logic inputs, typical 50 ns propagation delay, and under-voltage lockout (UVLO) for VCC. The combination of integrated OCP plus FAULT reporting eliminates the need for an external current-sense comparator in many designs. The device uses a non-inverting buffer architecture with rail-to-rail output swing referenced to VCC and ground. Its low on-resistance output stage ensures fast Miller plateau transitions even with high dV/dt noise on the switched node. The PG-DSO8 package gives a small PCB footprint while maintaining adequate thermal dissipation for the low quiescent dissipation typical of gate drivers. Typical applications include industrial SMPS half-bridge and full-bridge converters, motor drive low-side switches, solar inverters, UPS systems, and eMobility DC-DC stages. The integrated OCP and FAULT pin make it especially suitable for any application that requires a hardware-level short-circuit protection on a low-side switch. When designing with this driver, place the OCP sense resistor as close to the source pin of the power switch as possible to minimize parasitic inductance, and keep the gate-drive loop area small for clean switching.
1EDB7275FXUMA1 - Single-Channel Isolated Gate Driver IC | Infineon
The Infineon 1EDB7275FXUMA1 is a single-channel isolated gate driver IC in a PG-DSO-8 (150 mil DSO) package, featuring 5.4 A typical and 9.8 A peak output current capability. It provides galvanic isolation of 3 kVrms with coreless transformer technology, 300 V/ns common-mode transient immunity (CMTI), and tight propagation delay matching of +6/-4 ns across the operating range. According to the Infineon product family datasheet, the 1EDBx275F series is engineered for fast-switching medium-to-high power systems using Si MOSFETs, SiC MOSFETs, and GaN HEMTs. An isolated gate driver is a semiconductor device that provides both signal-level translation and high-voltage galvanic isolation between a low-voltage control domain (microcontroller, DSP, or FPGA) and a high-voltage power-switch gate. It belongs to the broader hierarchy of gate driver ICs -> driver ICs -> power management ICs -> semiconductors. Isolated gate drivers replace legacy optocoupler + buffer chains, eliminating the LED aging, CTR degradation, and slow propagation issues inherent to optical isolation while delivering superior CMTI and timing accuracy. Key features include a wide driver supply range suitable for both unipolar and bipolar gate drive, under-voltage lockout (UVLO) protection for the secondary side, and rail-to-rail gate output stage capable of sourcing 5.4 A and sinking 9.8 A peak. The part operates across an extended industrial temperature range, and the 150 mil DSO footprint (PG-DSO-8) is JEDEC-compatible, simplifying PCB layout migration from optocoupler-based designs. The 1EDB7275F architecture uses Infineon's coreless transformer (CT) isolation technology, which avoids the saturation, EMI, and size penalties of conventional pulse transformers. Tight part-to-part skew and fast signal propagation enable safe operation in high-frequency half-bridge and full-bridge topologies, and excellent CMTI of 300 V/ns prevents false triggering in noisy high-dv/dt environments such as SiC totem-pole PFC stages. Typical applications include industrial motor drives, solar inverters, server and telecom switched-mode power supplies, EV onboard chargers, and SiC/GaN-based high-density converters. The 150 mil DSO package suits both hand-soldered prototyping and high-volume SMT assembly. The Infineon datasheet highlights use as a superior alternative to high-side driving solutions based on optocouplers or pulse transformers, especially where propagation delay accuracy and long-term reliability matter. When designing with the 1EDB7275FXUMA1, place the bypass capacitors on VCC1 and VCC2 as close to the IC pins as possible, and verify that the secondary-side supply rises above the UVLO threshold before PWM activity begins. For half-bridge topologies, ensure dead-time control is implemented at the controller side because the 1EDBx275F family is a single-channel device. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet, complementing Infineon's official 1EDB7275F datasheet with cross-brand equivalents and selection guidance.
1EDB8275FXUMA1 - 5.4/9.8A Isolated Gate Driver | Infineon
The Infineon 1EDB8275FXUMA1 is a single-channel isolated gate driver IC housed in a PG-DSO-8 (150 mil DSO) package. It delivers 5.4 A source and 9.8 A sink peak gate drive currents and provides 3000 Vrms galvanic isolation between the low-voltage input side and the high-voltage output side. The driver is built around Infineon's coreless transformer (CT) isolation technology, which eliminates the need for optocouplers and supports a common-mode transient immunity (CMTI) of 300 V/ns. What is an isolated gate driver? An isolated gate driver is a power-management semiconductor that transfers switching commands from a low-voltage controller to the gate of a high-voltage power transistor (typically an IGBT, MOSFET, or SiC/GaN device) while maintaining galvanic isolation between input and output. Isolated gate drivers sit within the broader power management IC family and are essential building blocks for high-voltage inverters, motor drives, and switched-mode power supplies where safety isolation and high dV/dt noise immunity are mandatory. The 1EDB8275F family supports supply voltages of up to 40 V on the output side and operates with +6/-4 ns propagation delay matching between channels in dual variants. It is designed for fast-switching silicon carbide (SiC) and gallium nitride (GaN) transistors in high-frequency power-conversion stages. According to the Infineon datasheet, the device integrates input-side and output-side undervoltage lockout (UVLO), short-circuit clamping, and active Miller clamp options. Typical applications include solar inverters, electric vehicle (EV) onboard chargers, industrial servo drives, and high-density telecom rectifiers. The wide creepage/clearance of the PG-DSO-8 wide-body package supports reinforced insulation per IEC 60747-17, simplifying safety certification of end equipment. When designing with this device, ensure that the bootstrap supply or isolated DC/DC converter provides sufficient gate-drive headroom for the chosen power switch. Decoupling capacitors must be placed close to VCC and VBS pins to suppress switching noise, and the gate-drive loop inductance must be minimized to avoid ringing. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes beyond the manufacturer datasheet.
1EDB9275FXUMA1 - Isolated Gate Driver IC, High-Side, 9A, PG-DSO-8 | Infineon
The Infineon 1EDB9275FXUMA1 is a single-channel isolated gate-driver IC for IGBTs and MOSFETs in high-side half-bridge and bootstrap-style drive topologies. Packaged in a 150-mil PG-DSO-8 with 3 kVrms galvanic isolation, it delivers 9 A peak source/sink drive current and is designed for fast-switching medium-to-high power systems where short propagation delay and high common-mode transient immunity (CMTI) are required. An isolated gate driver IC is a semiconductor that transmits a low-power PWM control signal across a galvanic isolation barrier while providing the high peak currents needed to quickly charge and discharge the gate capacitance of a power switch. Isolated drivers sit one level above non-isolated gate drivers in the power-management hierarchy: gate driver -> power management IC -> semiconductor, and they enable high-side switching and safety isolation across the high-voltage domain boundary. Key features of the 1EDB9275F family include 3 kVrms isolation, 300 V/ns CMTI, 20 ns clamping response time, and tight part-to-part skew for parallel operation. The device supports an input supply of 3 V to 15 V and includes tight timing specifications with low propagation delay, making it suitable as a modern alternative to optocoupler- or pulse-transformer-based high-side drive solutions that are limited in speed and aging behavior. The 1EDB9275F uses Infineon's coreless transformer (CT) isolation technology to transmit the gate-drive signal across the isolation barrier. Compared with optocouplers, this approach eliminates LED aging effects, provides superior CMTI performance, and delivers a stable propagation delay across the full operating temperature range. The inverting input logic of the 1EDB9275FXUMA1 variant simplifies level shifting in half-bridge configurations where the low-side drive signal must be inverted to drive the high-side switch. Typical applications include industrial motor drives, solar inverters, UPS systems, EV charging power modules, and switched-mode power supplies with high-side MOSFET or IGBT switches. Designers choose the 1EDBx275F family when fast switching, robust isolation, and small PCB footprint matter more than absolute minimum propagation delay. When designing with this driver, place the bootstrap capacitor close to the BST and HS pins and verify that the bootstrap voltage is refreshed every switching cycle. The high CMTI rating means the part tolerates extremely fast dv/dt transitions on the high-side switch node, but PCB layout still matters: keep the gate-drive loop area minimal and route the floating supply return directly to the HS pin.
1EDI20I12MFXUMA1 - 1200V Isolated Gate Driver | Infineon
The Infineon 1EDI20I12MFXUMA1 is a 1200 V single-channel, galvanically isolated high-side gate driver IC delivering up to 2 A source/sink output current, housed in a PG-DSO-8-51 (8-pin DSO with 4 mm creepage) package. It is designed to drive IGBTs and SiC MOSFETs in industrial inverter and high-voltage power-conversion applications, and integrates an active Miller clamp (also rated to 2 A) plus short-circuit clamping to protect the power switch against parasitic turn-on and desaturation events. A gate driver IC is a specialized power-management device that sits between a low-voltage control logic output (typically from a microcontroller or DSP) and the high-voltage gate of a power transistor such as an IGBT, SiC MOSFET, or GaN HEMT. Its core function is to provide level shifting, isolation (galvanic for safety in high-voltage bridges), and high-peak current capability to charge and discharge the gate capacitance quickly, which minimizes switching losses. The 1EDI20I12MFXUMA1 belongs to Infineon's EiceDRIVER 1ED family of compact single-channel isolated gate drivers, optimized for high-voltage discrete power stages. Key features include 1200 V functional isolation across the coreless transformer barrier, 2 A peak source/sink gate drive current, integrated 2 A active Miller clamp, short-circuit clamping (DESAT-like), 300 ns typical propagation delay, 4 mm minimum creepage for reinforced isolation in pollution degree 2 environments, and an operating supply range suitable for +15 V gate drive rails. The driver supports both inverting and non-inverting input logic. Architecturally, the part uses Infineon's coreless-transformer (CT) isolation technology to transmit gate-drive signals across the galvanic barrier without optocouplers, eliminating optocoupler aging effects and providing CMTI in the tens of kV/us range. Internal undervoltage lockout (UVLO) on the secondary side protects IGBTs from insufficient gate drive voltage. Typical applications include solar string inverters, industrial motor drives (VFD/servo), EV charging stations, induction heating, and uninterruptible power supplies (UPS) where isolated, high-side IGBT/SiC gate drive is required. The part's compact PG-DSO-8-51 footprint reduces PCB area compared to traditional gate-drive optocoupler + discrete buffer solutions. When designing with this driver, place the bootstrap or isolated supply decoupling capacitor as close as possible to the VCC2 pin, and keep the gate-drive loop (driver output → gate → emitter/source → driver GND2) as small as possible to minimize parasitic inductance. The Miller-clamp pin should be connected directly to the IGBT collector-side gate-pad to be effective against dv/dt-induced turn-on. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes that complement (and in some areas go beyond) the manufacturer datasheet, supporting engineer decisions during component selection and BOM risk mitigation.
1EDI20N12AFXUMA1 - 1200V Isolated Gate Driver, 4A/3.5A | Infineon
The Infineon 1EDI20N12AFXUMA1 is a 1200 V single high-side gate driver IC with galvanic isolation, short circuit clamping, and separate sink/source outputs, delivering 4.0 A source and 3.5 A sink drive current in a PG-DSO-8-51 (DSO-8) surface-mount package. Part of the EiceDRIVER family, it integrates a coreless transformer isolation barrier rated for reinforced insulation and supports high-voltage half-bridge and high-side switch topologies up to 1200 V. What is an isolated gate driver? An isolated gate driver is a power semiconductor driver that provides both signal-level translation (logic-to-power) and galvanic isolation between a low-voltage control domain (microcontroller, DSP, or logic) and a high-voltage power domain (IGBT, MOSFET, or SiC switch). It is one tier in the hierarchy: gate driver -> driver IC -> power management IC -> semiconductor. Compared to bootstrap or level-shift solutions, a galvanically isolated driver removes the need for a high-side bootstrap supply and protects the controller from dv/dt-induced transients, making it the standard choice for safety-critical or high-side floating applications. Key features include 4.0 A typical source current and 3.5 A typical sink current for fast switching of large gate-charge MOSFETs and IGBTs, separate source and sink output pins for independent turn-on/turn-off gate-resistor optimization, short-circuit clamping to protect the power switch during desaturation events, and a typical propagation delay of approximately 120 ns with tight part-to-part matching. The internal coreless transformer provides reinforced isolation per IEC 60747-17. Architecturally, the part uses on-chip CMOS logic feeding a coreless-transformer-coupled isolation barrier, then a bipolar/MOSFET output stage capable of 4 A peak source and 3.5 A peak sink. This delivers high CMTI (Common-Mode Transient Immunity) and predictable timing, essential for switching at high dV/dt. Unlike opto-isolated drivers, the coreless transformer avoids the LED aging and propagation skew seen in optocouplers. Typical applications include industrial drives (3-phase inverter gates), solar string and central inverters, UPS and telecom power-factor-correction stages, EV charging infrastructure, welding power supplies, and induction heating inverters. The 1200 V rating comfortably covers 600 V / 690 V AC bus designs with margin. Design considerations: place the gate resistor and gate-source pull-down as close as possible to the driver output pins. Because the output stage is a push-pull buffer, ensure the VCC bypass capacitor (typically 1 µF X7R + 100 nF) sits within 5 mm of the supply pin to suppress ringing during 4 A peak switching. Do not parallel source and sink outputs directly - the separate pins are intentionally provided for independent gate-charge profiling. This page consolidates distributor pricing, drop-in alternatives, and PCB-level design notes not found in the standalone manufacturer datasheet, enabling faster design-in for high-voltage power converter projects.
1EDI3033ASXUMA1 - 12A SiC MOSFET Gate Driver, 5700Vrms | Infineon
The Infineon 1EDI3033ASXUMA1 is an isolated single-channel high-voltage gate driver IC delivering 12 A peak output current with coreless transformer isolation rated at 5700 Vrms, housed in a PG-DSO-20-91 wide-body surface-mount package. It is engineered specifically to drive SiC MOSFETs and IGBTs in electric-vehicle (EV) traction inverters, where 60 ns typical propagation delay and ISO 26262 ASIL D functional-safety compliance enable deterministic, low-latency switching at high dv/dt. The driver integrates a DESAT short-circuit protection, an active Miller clamp, and an integrated bootstrap diode for the high-side supply. A gate driver IC is a power-management semiconductor that sits between a low-power control MCU/DSP and a high-power switching transistor. Its job is to level-shift logic signals to the gate-drive voltage required by the power device, provide the high peak currents needed to charge and discharge the gate capacitance, and reinforce galvanic isolation between the low-voltage control domain and the high-voltage power stage. Within the broader taxonomy, the 1EDI3033ASXUMA1 belongs to the isolated gate driver family, which itself is a sub-category of power MOSFET drivers, which sit under power management ICs. This hierarchy matters because isolation rating, propagation delay, and source/sink current are the three figures of merit that distinguish EV-grade SiC/IGBT drivers from generic half-bridge drivers. Key features include a 12 A typical source/sink output stage, 60 ns propagation delay with minimal part-to-part variation, and built-in DESAT detection with programmable blanking for short-circuit protection. The coreless transformer technology eliminates the need for a discrete pulse transformer, reducing PCB area and improving robustness under high dv/dt transients typical of 800 V EV battery architectures. The wide-body PG-DSO-20-91 package provides 8 mm creepage and 5700 Vrms isolation, exceeding the requirements of 800 V battery systems and meeting IEC 60664-1 overvoltage category II. Architecturally, the device uses Infineon's coreless-transformer (CT) isolation barrier to transmit PWM commands across the isolation boundary, with on-chip encoding/decoding and refresh-pulse verification. The output stage uses a complementary N-channel MOSFET push-pull pair capable of 12 A typical gate current, which translates to sub-50 ns rise/fall times on typical SiC MOSFETs such as Infineon's CoolSiC family. An internal charge pump supports unipolar gate-drive operation, simplifying the auxiliary supply design. Typical applications include EV traction inverters for 400 V and 800 V battery architectures, on-board chargers (OBC), DC-DC boost converters for HV-LV power transfer, and industrial servo drives. The combination of ASIL D readiness, 12 A drive strength, and 60 ns delay also makes the 1EDI3033ASXUMA1 a candidate for solar string inverters and high-power EV fast-charging stations. When designing with this driver, pay close attention to gate-resistor selection: a 2.2 to 10 ohm range typically balances switching loss against ringing, and the DESAT threshold must be set well below the SiC MOSFET's RBSOA limit. Keep the high-side bootstrap capacitor close to the BST and HB pins to avoid UVLO trips during 100% duty-cycle operation.
1EDI40I12AFXUMA1 - 1200V Isolated Gate Driver, 7.5A | Infineon
The Infineon 1EDI40I12AFXUMA1 is a 1200 V single-channel, galvanically isolated high-side gate driver IC for IGBTs and MOSFETs, housed in a PG-DSO-8-51 package with 4 mm creepage distance. It delivers source current of +7.5 A and sink current of -6.8 A, enabling fast switching of high-voltage power switches in industrial drives, solar inverters, and EV traction converters. According to Infineon datasheet excerpts, the device operates from a 3.1 V to 17 V secondary supply rail and provides short-circuit clamping, separate source/sink output pins, and integrated coreless transformer (CT) galvanic isolation rated for 1200 V working voltage. An isolated gate driver IC is a critical interface between low-voltage control logic and a high-voltage power transistor. Galvanic isolation, achieved here through Infineon's coreless transformer (CT) technology, blocks high dV/dt common-mode transients and protects the microcontroller side from potentially destructive high-voltage faults. Within the broader power-management hierarchy, the 1EDI40I12AF sits between the gate-driver family -> isolated gate drivers -> MOSFET/IGBT drivers -> power management ICs -> semiconductors, making it foundational to any switched-mode power-conversion stage requiring safe control isolation. Key features include 7.5 A source / 6.8 A sink drive strength, separate source/sink pins for asymmetric gate-charge profiling, short-circuit clamping with DESAT-style protection, Undervoltage Lockout (UVLO) on the secondary side, and 4 mm package creepage meeting IEC 60664 reinforced-insulation creepage requirements for 1200 V systems. The CT isolation technology eliminates the optocoupler aging concerns of legacy HCPL drivers and supports propagation delays below 100 ns typical. The architecture uses an on-chip transmitter to encode input PWM across a coreless transformer, with a secondary-side decoder that regenerates the gate-drive signal. This topology rejects common-mode transients exceeding 100 kV/us, far surpassing optocoupler-based alternatives. The PG-DSO-8-51 footprint is mechanically robust and supports >2.5 mm stand-off, enabling PCB designs conforming to IEC 61800-5-1 drive-system isolation standards. Typical applications include industrial motor drives (servo, VFD), solar string inverters, EV traction inverters, induction-heating resonant converters, and high-voltage DC-DC converters. The wide 3.1 V to 17 V secondary supply allows operation directly from a 5 V or 12 V bias rail without additional level shifting. When designing with this part, ensure the secondary-side decoupling capacitor is placed within 5 mm of VCC2/GND2 to suppress switching-spike ringing. Designers should also confirm that the 4 mm creepage clearance is not violated by adjacent high-voltage traces. This page synthesizes distributor stock data, drop-in EiceDRIVER alternatives, application reference designs, and practical PCB layout guidance not available from the manufacturer datasheet alone - giving engineers a single source for sourcing, designing, and qualifying the 1EDI40I12AF in new and existing 1200 V power stages.
1EDI60H12AHXUMA1 - 1200V Isolated Gate Driver, 10A Source | Infineon
The Infineon 1EDI60H12AHXUMA1 is a single-channel, 1200V galvanically isolated high-side gate driver IC delivering typical 10.0 A source and 9.4 A sink currents in a PG-DSO-8-59 (DSO-8) surface-mount package. Part of Infineon's EiceDRIVER family, the device is engineered for driving IGBTs in high-voltage power conversion stages up to 1200V. It uses coreless transformer (CT) technology to provide reinforced isolation between the low-voltage control side and the high-voltage gate drive side. A gate driver IC is a specialized power-management component that sits between a low-power controller (MCU, DSP, FPGA) and a power switch (IGBT, MOSFET, SiC, GaN). It translates low-current PWM logic signals into the high-current gate charge and discharge pulses needed to switch the power device quickly and efficiently. In the broader system hierarchy, gate drivers fall under Power Management > Power MOSFET & IGBT Drivers, which themselves are a subcategory of power management ICs. Galvanically isolated gate drivers add a critical barrier that allows the controller to float at any reference potential up to thousands of volts above ground - essential for high-side switching in half-bridge, full-bridge, and three-phase inverter topologies. The 1EDI60H12AHXUMA1 features separate source and sink output pins (SEP output) for independent gate-charge and gate-discharge path optimization, allowing designers to add asymmetric gate resistors to fine-tune turn-on/turn-off dV/dt behavior. Built-in short-circuit clamping protects the driven IGBT during desaturation events, while the wide driver-side supply range supports both standard and negative-gate-bias drive schemes used to prevent parasitic turn-on in bridge configurations. The 8mm creepage/clearance of the PG-DSO-8-59 package satisfies reinforced insulation requirements for industrial voltage classes. Architecturally, the device integrates an on-chip coreless transformer that achieves several kilovolts of reinforced isolation while consuming far less board area than traditional optocoupler-based solutions. On the input side, the driver accepts CMOS/TTL-compatible logic, and on the output side it can directly drive IGBT modules from 600V to 1200V classes, including EconoDUAL, Easy, and PrimePACK footprints with appropriate external gate resistors. Typical propagation delay is in the tens of nanoseconds, making it suitable for switch-mode power conversion up to several hundred kHz. Typical applications include industrial motor drives (servo, VFD), solar inverters, uninterruptible power supplies (UPS), welding inverters, and induction heating. The combination of 1200V isolation rating and 10A peak drive current also suits the device to driving large SiC MOSFET modules where high dV/dt demands robust isolation. Design considerations include providing adequate local decoupling on both primary and secondary supply pins, sizing gate resistors for the chosen IGBT module, and ensuring the PCB layout respects the 8mm creepage specification by routing no copper under the package body between primary and secondary sides.
1EDI60N12AFXUMA1 - 1200V Isolated Gate Driver, 10A Source/9.4A Sink | Infineon
The Infineon 1EDI60N12AFXUMA1 is a 1200 V single high-side gate driver IC with galvanic isolation, short-circuit clamping, and separate sink/source outputs. Housed in a PG-DSO-8-51 (8-pin DSO) package, it delivers typical 10 A source and 9.4 A sink currents, making it ideal for driving CoolMOS power MOSFETs in 3- and 4-pin packages across a wide range of high-voltage topologies. A gate driver IC is a power-management semiconductor that sits between a low-voltage control signal (such as a PWM output from a microcontroller or DSP) and the gate of a high-voltage power switch (MOSFET, IGBT, or SiC). Its primary job is to provide the high peak currents needed to charge and discharge the large gate capacitance quickly, which minimizes switching losses. Galvanic isolation adds a high-voltage barrier between the control side and the power side, protecting low-voltage logic from dangerous high-voltage transients. Within the power-management hierarchy, gate drivers sit alongside voltage regulators, supervisors, and motor drivers as essential building blocks for any switched-power converter. Key features include a wide VDD supply range from 3.1 V to 17 V, 120 ns typical propagation delay, 40 V absolute maximum output voltage, and 4 mm minimum creepage distance for reinforced insulation. The device supports input logic levels compatible with 3.3 V and 5 V microcontrollers and offers separate source and sink output pins that allow independent gate-resistor tuning for turn-on and turn-off transitions. Internal short-circuit clamping actively limits the gate voltage during desaturation events, protecting the driven MOSFET from over-stress. The 1EDI60N12AFXUMA1 uses Infineon's coreless-transformer (CT) isolation technology, which provides robust reinforced isolation without the size, cost, or wear-out concerns of optical couplers. Compared with opto-isolated gate drivers, this architecture offers higher CMTI (common-mode transient immunity), tighter propagation-delay matching across temperature, and longer operational life. The integrated Miller clamp and DESAT-like protection further reduce the external BOM count in motor-drive and inverter designs. Typical applications include industrial motor drives, solar inverters, UPS systems, welding equipment, induction heating, and EV onboard chargers. The high source/sink current capability also makes it suitable for driving high-current IGBT modules in traction converters. When designing with this part, ensure the gate-drive loop is kept short and that a low-ESR decoupling capacitor is placed within 5 mm of the VDD pin. The separate source/sink outputs should each be routed with their own gate resistor to independently control rise and fall times.