Power MOSFET Drivers
Products (426)
1EDN6550BXTSA1 - 5A Gate Driver IC, SOT-23-6 | Infineon
The Infineon 1EDN6550BXTSA1 is a robust single-channel gate driver IC with truly differential inputs, 4 A source / 8 A sink output current capability, and a minimum 29 ns pulse width, housed in a 6-pin PG-SOT23-6-3 (SOT-23-6) package. The device operates as a non-inverting low-side gate driver with TTL-compatible logic inputs and supports a wide supply voltage range suitable for driving MOSFETs and GaN HEMTs in high-frequency switching applications. A gate driver IC is a power management semiconductor that sits between a low-power control signal (typically from a microcontroller or PWM controller) and the gate of a high-power switching transistor. Its role in the system hierarchy is: gate driver -> driver IC -> power management IC -> semiconductor. Gate drivers provide the high peak currents needed to rapidly charge and discharge the gate capacitance of MOSFETs, IGBTs, or GaN devices, thereby reducing switching losses and enabling high-frequency operation that would be impossible if the controller were forced to drive the gate directly. Key features include differential input structure with true common-mode rejection, 4 A source / 8 A sink peak output current, 29 ns minimum input pulse width, TTL input thresholds, and integrated under-voltage lockout (UVLO) protection. The differential input architecture eliminates the need for a ground-referenced signal return path, which is critical when the driver is floating at a switched node potential in half-bridge or bootstrap configurations. The 1EDN6550B architecture uses a monolithic high-voltage gate driver process with on-chip level shifting and proprietary output stage design. The asymmetric source/sink current rating (4 A / 8 A) is intentional - faster turn-off (high sink) minimizes dead time in half-bridge topologies, while the 4 A source rating is sufficient to drive most enhancement-mode GaN FETs and small-to-medium silicon MOSFETs without external booster stages. Typical applications include synchronous buck and boost converters, half-bridge and full-bridge power stages, GaN-based point-of-load converters, Class-D audio amplifiers, motor driver pre-drivers, and any application requiring isolated or differential control signal interface to a power switch. The wide input voltage tolerance and small footprint also suit industrial 24 V bus systems and battery-powered portable equipment. When designing with this device, place a 1 nF to 100 nF ceramic bypass capacitor as close as possible to the VCC pin to handle the high peak currents during switching. The differential input feature allows direct connection to an isolated gate-drive transformer or digital isolator output without level shifting. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
1EDN7116GXTMA1 - 200V Single-Channel GaN Gate Driver IC | Infineon
The Infineon 1EDN7116GXTMA1 is a 200V tolerant, single-channel low-side gate driver IC designed in the PG-VSON-10-4 (3.0x3.0 mm) package, optimized for driving Infineon CoolGaN™ enhancement-mode GaN HEMTs and standard Si MOSFETs in high-frequency power conversion stages. The non-inverting driver delivers 2A peak source/sink current with true differential input structure, an integrated active Miller clamp, and 4A active pull-down capability for safe, fast turn-off of GaN switches in hard-switched half-bridge topologies. A gate driver IC (also called a MOSFET driver or GaN driver) is a power-management integrated circuit that sits between a low-power control signal (PWM from a digital controller) and the gate of a high-power switching transistor. In the broader system hierarchy, a gate driver is a PMIC (power management IC) that drives power semiconductors - MOSFETs, IGBTs, or GaN HEMTs - delivering the high transient current (amperes, not milliamperes) required to charge and discharge the gate capacitance in nanoseconds. Without a gate driver, a microcontroller's GPIO pin cannot switch a power FET quickly enough to avoid cross-conduction, ringing, or unacceptable switching losses. TDI (truly differential input) gate drivers like the 1EDN7116G add galvanic isolation behavior in the input stage, providing robust rejection of fast dV/dt transients up to 200 V/ns that occur on the switching node of a half-bridge. Key features of the 1EDN7116GXTMA1 include: 200V maximum blocking voltage on the switch node (allowing safe operation with 150V rails or large transient overshoots), integrated 4.4V LDO regulator providing stable gate supply from a wider VCC range, separate source/sink outputs enabling independent turn-on and turn-off strength optimization, and 9 ns typical propagation delay matched between rising and falling edges for low-distortion PWM transfer. The IC operates from a single 4.5V to 5.5V supply, draws less than 1 mA quiescent current, and provides under-voltage lockout (UVLO) for both VCC and the gate rail to prevent partial-enhancement of the driven GaN device. The driver uses Infineon's proprietary TDI input stage which floats the logic reference above the switch-node ground return, eliminating the need for a digital isolator in many low-side applications and enabling true differential PWM signaling over short distances. The integrated active Miller clamp pulls the gate hard-low during the off-state when an external gate-return is used, suppressing unwanted turn-on from dV/dt-induced Miller current. Source/sink currents are independently programmable via external resistors, giving the designer direct control over EMI versus switching-loss trade-offs. Typical applications include 48V-to-point-of-load synchronous buck converters, totem-pole PFC front-ends using GaN switches, telecom 48V intermediate bus converters, Class-D audio amplifiers, and on-board charger modules for mild-hybrid EV traction systems. The 200V rating comfortably handles 100V-rated GaN devices in half-bridge configurations. When laying out the PCB, keep the gate-drive loop (driver output → FET gate → FET source → driver ground return) to a surface area of less than 1 cm² to minimize parasitic inductance. Use a 1 nF high-frequency decoupling capacitor directly at the VCC pin and a 100 nF at the gate-rail output pin. Place the Miller-clamp bypass capacitor within 5 mm of the dedicated CLAMP pin to ensure its turn-on effectiveness at high dV/dt. This page synthesizes distributor inventory, drop-in same-package alternatives, and practical high-frequency layout guidance not found in the manufacturer datasheet alone.
1EDN7126GXTMA1 - 1.5A 200V TDI Gate Driver for GaN | Infineon
The Infineon 1EDN7126GXTMA1 is a single-channel, truly differential input (TDI) gate driver IC for enhancement-mode GaN HEMTs and Si MOSFETs, housed in a 10-pin PG-VSON-10-4 package. It delivers 1.5 A peak source and sink current, supports up to 200 V common-mode voltage rejection on the differential inputs, and features non-inverting logic with a sub-nanosecond propagation delay budget optimized for high-frequency power conversion stages. What is a GaN gate driver? A GaN gate driver is a specialized power-management IC that translates low-power PWM control signals from a system controller into the high-current, fast-edge drive levels required to switch a gallium-nitride high-electron-mobility transistor (HEMT). Within the broader power-management hierarchy, gate drivers sit between the controller IC (logic domain) and the power switch (GaN HEMT or Si MOSFET), and they are essential for unlocking the high dV/dt and low switching-loss advantages that GaN devices provide over silicon MOSFETs. Compared with general-purpose low-side MOSFET drivers, GaN drivers such as the 1EDN family are designed for tight timing symmetry, robust galvanic isolation, and the ability to handle large negative gate-drive transients. Key features of the 1EDN7126GXTMA1 include 1.5 A peak source/sink drive strength, 200 V common-mode voltage transient immunity (CMR), true differential input with built-in hysteresis, and a wide operating voltage range that supports both 5 V and 12 V drive rails. The non-inverting single-channel architecture minimizes external component count, and the small PG-VSON-10-4 footprint (3 x 3 mm) saves PCB area in compact half-bridge or buck/boost power stages. Technically, the part uses Infineon's TDI (truly differential input) stage to reject large common-mode transients caused by fast switching nodes, which is critical for hard-switched half-bridge topologies. The integrated bootstrap-compatibility and matched propagation delays (typical < 10 ns skew) help prevent shoot-through in synchronous rectifier configurations and enable megahertz-class switching frequencies without timing-induced loss penalties. Typical applications include high-density DC-DC converters, telecom 48 V point-of-load stages, server and data-center power-delivery bricks, motor-drive auxiliary rails, and any high-frequency LLC or totem-pole PFC stage using GaN HEMTs. When designing with this device, place it close to the GaN switch to minimize gate-loop inductance, and use a Kelvin-source connection. A small ferrite bead or gate resistor in series with the output is recommended to damp ringing and control edge rates. This page synthesizes distributor pricing, drop-in compatible alternatives from the Infineon EiceDRIVER family, and PCB layout guidance not found in the manufacturer datasheet.
1EDN7136GXTMA1 - 4A Single-Channel GaN Gate Driver | Infineon
The Infineon 1EDN7136GXTMA1 is a single-channel, low-side gate driver IC engineered to control Infineon CoolGaN™ enhancement-mode GaN HEMTs, in a 10-pin PG-VSON-10-4 package. It delivers a 4 A source / 8 A sink peak gate drive current with sub-nanosecond propagation delay, allowing ultra-fast switching transitions in compact surface-mount power converters. A gate driver IC is a specialized power-management device that sits between a low-power control signal (typically from an MCU or PWM controller) and the gate of a power transistor. It provides the high transient current necessary to charge and discharge the transistor's input capacitance quickly, while providing logic-level translation, isolation, and protection. Within the broader taxonomy, the 1EDN7136 belongs to the hierarchy: gate driver IC → power management IC → semiconductor. As a low-side driver it pulls the gate to a defined reference (ground) and applies VDD with controlled slew rate, critical for GaN devices whose very low Qg demands sharp drive edges. Key features include a 4 A / 8 A asymmetric source/sink drive capability that overcomes GaN's miller plateau with sub-10 ns transitions, a true low-side topology with non-inverting logic input, integrated under-voltage lockout (UVLO) for both VDD and the GaN gate reference, and TTL-compatible CMOS input thresholds. The PG-VSON-10-4 package offers a low-inductance leadless footprint with a thermal pad, keeping gate-loop parasitics minimal — essential when every nanohenry of source inductance degrades switch-node rise time. Architecturally, the 1EDN7136 uses a matched totem-pair output stage with separate source and sink paths, allowing the asymmetry that prevents undesired turn-on from miller current while still delivering the high peak current needed at turn-on. Internal gate-voltage regulation adapts the output swing to a GaN-safe level (typically around 6 V), protecting the gate oxide from overstress. Typical applications include 48 V point-of-load converters, telecom and datacom buck stages, USB-PD adapters, Class-D audio amplifiers, and high-frequency LLC or totem-pole PFC front ends. This part is also used in synchronous rectification stages where the low-side GaN replaces a traditional Si MOSFET for higher efficiency. To retain power integrity, place a 100 nF ceramic decoupling capacitor directly at VDD within 2 mm of the pin, and keep the gate-drive loop area below 5 mm² to suppress ringing. A distinguishing note: this page synthesizes distributor pricing, same-package drop-in alternatives, and application-circuit design notes that go beyond the manufacturer datasheet alone.
1EDN7136UXTSA1 - 200V High-Side TDI Gate Driver IC | Infineon
The Infineon 1EDN7136UXTSA1 is a 200 V high-side Truly Differential Input (TDI) gate driver IC designed for Gallium Nitride (GaN) HEMTs and silicon MOSFETs, delivering 1 A peak source and 2 A peak sink output current in a 6-pin TSNP package with exposed pad. The driver operates from a wide supply range and provides active Miller clamping to prevent unintended turn-on of the power switch during fast switching transitions. Its truly differential input rejects common-mode noise and ground bounce, enabling robust operation in noisy high-frequency half-bridge and full-bridge power topologies. A gate driver IC is a specialized power-management device that sits between a low-power control IC (such as a microcontroller, FPGA, or digital controller) and a discrete power switch (MOSFET, IGBT, or GaN HEMT). Its primary function is to level-shift the control logic, provide high peak current to rapidly charge and discharge the gate capacitance of the power switch, and protect the controller from high-voltage transients. Within the broader taxonomy, a gate driver belongs to the power-management IC family and sits hierarchically under MOSFET/IGBT drivers, which themselves sit under power semiconductors. The 1EDN7136UXTSA1 specifically targets the high-voltage, high-frequency tier where GaN switches offer superior figure-of-merit compared to silicon MOSFETs. Key features include 200 V absolute maximum driver supply voltage, 1 A source / 2 A sink peak output current, under-voltage lockout (UVLO) for both driver supply and digital input rail, and an integrated active Miller clamp that prevents parasitic turn-on. The device achieves sub-nanosecond propagation delay matching between high-side and low-side channels in half-bridge configurations, which is critical for dead-time control and efficiency at multi-MHz switching frequencies. The 1EDN7136UXTSA1 employs Infineon's TDI architecture, which decouples the input logic reference from the driver ground. This allows the part to be used directly in bootstrap and high-side configurations without an additional level shifter. The exposed-pad TSNP-6 package provides a low thermal resistance path for continuous high-frequency operation. Typical applications include high-frequency DC-DC converters, telecom and server 48 V intermediate bus converters, Class-D audio amplifiers, motor drives, and industrial SMPS systems. In these applications, the 1EDN7136UXTSA1 pairs naturally with Infineon CoolGaN HEMTs and OptiMOS MOSFETs to deliver >1 MHz switching frequencies with double-digit efficiency gains. When designing with this driver, place the bootstrap diode and capacitor close to the driver and keep the high-side switching loop area to a minimum. Always verify that the GaN or MOSFET gate charge requirements stay within the driver's 1 A source / 2 A sink capability to avoid excessive rise/fall times and switching losses. This page synthesizes distributor pricing, drop-in alternatives from the Infineon EiceDriver family, and practical PCB layout guidance not found in the standalone manufacturer datasheet, delivering a single reference for engineers evaluating the 1EDN7136UXTSA1 for GaN-based power designs.
1EDN7146GXTMA1 - 200V TDI Gate Driver IC | Infineon
The Infineon 1EDN7146GXTMA1 is a 200 V high-side Truly Differential Inductor (TDI) gate driver IC housed in a 10-pin PG-VSON-10-4 (very-thin small-outline no-lead) package. It delivers 500 mA source/sink drive current with 11 V gate-drive capability, designed to drive the gate of a single N-channel power MOSFET in non-inverting topologies. The device is specified for a 4.5 V to 20 V supply on its low-side VCC rail, with a 200 V absolute maximum rating on the high-side floating supply pin (VB) for bootstrap operation. A gate driver IC is a power-management semiconductor that sits between a low-power control signal (e.g., from a PWM controller or microcontroller) and the gate of a high-power switching transistor. It provides level shifting, high-current drive, and isolation between the control domain and the switching domain. Gate drivers sit within the hierarchy: gate driver IC -> driver/power management IC -> semiconductor -> discrete-component power stage. The "TDI" designation refers to Infineon's Truly Differential Inductor input topology, which provides robust common-mode transient immunity for hard-switched power converters. Key features of the 1EDN7146GXTMA1 include integrated bootstrap diode (eliminating an external discrete diode in high-side drive circuits), a typical propagation delay of 40 ns, built-in dead-time blanking for de-glitching common-mode transients, and under-voltage lockout (UVLO) on both VCC and VB rails. The driver integrates a minimum guaranteed blanking time to prevent spurious re-triggering of the power switch during fast dV/dt events. The PG-VSON-10-4 package exposes the thermal pad for low-RthJA operation in surface-mount designs. Architecturally, the 1EDN7146GXTMA1 uses a level-shifted high-side channel that tolerates 200 V node swings, with the gate-drive output slew-rate and pull-up/pull-down strength sized for fast-switching GaN or silicon MOSFETs. The differential input stage rejects common-mode noise on the PWM signal path, which is critical when the controller is referenced to a noisy ground or when the driver is placed near the switching node. Typical applications include high-frequency DC-DC converters, telecom bricks, server 48 V point-of-load stages, synchronous rectification in half-bridge and full-bridge converters, motor-drive gate-drive interfaces, and Class-D audio amplifier output stages. Designers commonly pair this part with CoolGaN or OptiMOS MOSFETs in 48 V-12 V intermediate bus converters. When designing with the 1EDN7146GXTMA1, place the bootstrap capacitor as close as possible to the VB and VS pins to minimize parasitic inductance, and route the gate-drive loop with minimal area to reduce EMI. Verify that the gate-source resistor (Rgs) value matches the MOSFET manufacturer's recommendation to prevent parasitic turn-on. This page synthesizes distributor pricing, drop-in alternatives from the Infineon 1EDN71x6G family, and practical design notes not consolidated in the manufacturer datasheet.
1EDN7146UXTSA1 - 200V High-Side GaN Gate Driver | Infineon
The Infineon 1EDN7146UXTSA1 is a 200 V high-side TDI (truly differential input) single-channel gate driver IC engineered specifically for driving GaN SG HEMTs and standard power MOSFETs, housed in a 6-pin PG-VSON-1 package with an exposed thermal pad. Key headline parameters include a 200 V maximum drain-to-source blocking tolerance that tolerates the inductive overshoot of GaN half-bridge switching nodes, a sub-nanosecond propagation delay, and a gate-drive strength suitable for hard-switching frequencies above 1 MHz. A GaN gate driver is a specialized high-speed, high-voltage gate-driver IC that sits between a low-voltage PWM controller and the gate of a gallium-nitride power transistor. Gate drivers belong to the power-management IC family, which sits under the broader hierarchy of semiconductor devices, and they are essential because GaN transistors require tight, well-controlled gate voltages with very short propagation delays to avoid cross-conduction in half-bridge topologies. The 1EDN7146UXTSA1 specifically implements truly differential inputs, which allow direct coupling to a non-isolated controller without the bootstrap diode and supply noise issues that plague conventional high-side drivers. Differentiating features include true differential input logic that rejects ground bounce and level-shifter delay, an integrated charge pump that holds the high-side rail during 100% duty-cycle operation, and matched ultra-fast rise/fall times that minimize the dead-time required between complementary GaN outputs. Compared with general-purpose MOSFET drivers, this device is engineered to keep the total propagation delay low and balanced across temperature, which is critical for MHz-class switching. Architecturally, the 1EDN7146UXTSA1 uses Infineon's TDI level-shifter topology with a low-voltage CMOS input stage and a high-voltage blocking isolator feeding a 1.5 A/2.5 A source/sink gate driver stage. This combination provides the noise immunity of a digital isolator and the dynamic performance of a monolithic gate driver in a single small package. Typical applications include 48 V telecom and server point-of-load converters, USB-PD and other high-density AC/DC adapters, photovoltaic microinverters, and Class-D audio amplifiers built on GaN transistors. The wide 200 V blocking voltage also makes it well suited for 100 V automotive and industrial bus systems. When designing with this part, minimize the gate-loop inductance by routing the driver output and GaN gate return directly over a tight ground via, and verify that the controller's ground reference can be tied to the driver's input ground without injecting switching noise. The internal charge pump eliminates the bootstrap diode, simplifying the BOM but still requiring a bypass capacitor within 2 mm of the supply pin. This page synthesizes distributor pricing, drop-in alternatives, parametric comparisons, and practical PCB layout notes not collected in any single manufacturer datasheet.
1EDN7511BXUSA1 - 4A/8A Low-Side Gate Driver | Infineon
The Infineon 1EDN7511BXUSA1 is a 1-channel low-side gate driver IC delivering 4 A source / 8 A sink drive capability, housed in a 6-pin PG-SOT23-6-2 package, designed for driving MOSFET and GaN switching devices. According to the Infineon product page, it features ±5 ns delay precision, true rail-to-rail low-impedance output stages, and integrated bootstrap-voltage tolerant design optimized for fast switching transitions in compact power-conversion designs. A low-side gate driver IC is a specialized power-management semiconductor that sits between a low-power control IC (such as a PWM controller or microcontroller) and the gate of a power switch (typically a MOSFET or GaN FET). It amplifies a logic-level command signal into a high-current gate-drive pulse capable of charging and discharging the gate capacitance of a power device in nanoseconds. Low-side drivers are the simplest gate-driver topology, sourcing the gate reference to the switch's source pin (typically ground), and they are widely used in non-isolated synchronous-rectifier, buck-converter, motor-drive, and Class-D audio amplifier designs. Key features of the 1EDN7511BXUSA1 include a wide operating voltage range, an industry-standard 6-pin SOT-23 footprint, and separate source/sink outputs that allow tuning of turn-on and turn-off dI/dt via an external gate resistor. The rugged output stage handles Miller-platform induced negative transients at the switch node, and the device's short propagation delay supports high-frequency operation above 1 MHz in advanced GaN-based designs. The 1EDN7511B family uses a true low-impedance complementary output buffer with matched pull-up and pull-down transistors, achieving sub-10 ns rise and fall times into a 1 nF load. Per Infineon's product brief, the device's design supports both TTL and CMOS input logic thresholds and includes under-voltage lockout (UVLO) protection. The combination of high peak current and low propagation delay makes the device particularly well-suited to hard-switched and resonant topologies where switching losses directly constrain system efficiency. Typical applications for the 1EDN7511BXUSA1 include high-frequency DC-DC converters, synchronous-rectifier drivers, telecom brick and point-of-load (POL) converters, Class-D audio amplifiers, and GaN-based 48 V bus converters in server and data-center power-delivery networks. The device is also widely used in solar micro-inverters, motor-control half-bridges, and USB-PD adapter designs where board space is at a premium. When designing with the 1EDN7511BXUSA1, place a small ceramic bypass capacitor (typically 100 nF) directly at the VCC pin and keep the gate-drive loop area minimal to avoid parasitic inductance that would otherwise produce ringing on the gate waveform. For GaN switches, a small gate-source resistor in the 2-5 ohm range helps dampen the very high dV/dt that this driver can produce. This page synthesizes distributor stock and pricing data, drop-in compatible alternatives, and practical design notes that complement the manufacturer datasheet to help engineers select, source, and apply the 1EDN7511BXUSA1 quickly and confidently.
1EDN7512GXTMA1 - 4A/8A Low-Side Gate Driver | Infineon
The Infineon 1EDN7512GXTMA1 is a single-channel low-side gate driver IC housed in a 6-pin PG-WSON-6-1 package with exposed pad, capable of 4 A source and 8 A sink peak output current and a typical propagation delay of 19 ns. Designed for both silicon MOSFETs and Gallium Nitride (GaN) power transistors, the driver features -10 V input robustness and separate source/sink outputs for optimized gate-loop design. The non-inverting and inverting logic inputs share the same small-footprint WSON-6 package that supports tight PCB layouts in high-frequency switching converters. A low-side gate driver is a type of power management IC that switches the gate of a ground-referenced power transistor between logic-level voltage and the source reference, providing the high di/dt charging and discharging currents that logic-level controllers cannot deliver directly. Within the broader power-electronics hierarchy, low-side drivers sit between logic controllers (microcontrollers, gate-driver ICs, isolated controllers) and the power stage (MOSFETs, IGBTs, HEMTs), bridging low-power control signals and high-current switching nodes. Infineon's EiceDRIVER family, to which this part belongs, includes both isolated and non-isolated gate drivers for industrial, automotive, and renewable applications. Key features of the 1EDN7512GXTMA1 include 4 A source / 8 A sink drive strength with separate output pins, an under-voltage lockout (UVLO) for safe bootstrap operation, and tight 19 ns typical propagation delay that supports multi-hundred-kHz switching frequencies. The -10 V input robustness on logic pins protects the device from gate-ring induced negative transients in hard-switched half-bridges, while the small WSON-6-1 footprint enables placement directly adjacent to the gate of the driven MOSFET to minimize parasitic gate-loop inductance. The architecture uses a matched CMOS output stage with separate pull-up (source) and pull-down (sink) transistors sized asymmetrically for fast turn-off and clean turn-on. This split-output topology is particularly advantageous for GaN HEMTs, which require very fast negative-edge gate discharge to avoid cross-conduction and require controlled positive-edge charging to limit ringing. The internal logic supports both inverting and non-inverting modes via a single-mode pin. Typical applications for the 1EDN7512GXTMA1 include low-side driving in synchronous buck and boost converters, half-bridge gate drive for motor-control H-bridges, primary-side driving of telecom DC-DC bricks, and high-frequency GaN-based point-of-load (POL) converters. It is also widely used in solar micro-inverters, server-voltage-regulator (VR) auxiliary stages, and USB-PD adapters where high efficiency demands fast, clean switching edges. When designing with this driver, place the decoupling VCC capacitor within 2 mm of the VCC and GND pins and route the gate-drive traces over a continuous ground return to control loop inductance. Because this is a non-isolated low-side driver, it cannot drive a high-side switch directly - for full-bridge topologies pair it with a bootstrap-based half-bridge driver or with Infineon's EiceDRIVER isolated portfolio. This page consolidates distributor pricing, drop-in alternatives, application references, and design notes not found in the manufacturer datasheet.
1EDN7550BXTSA1 - 4A/8A Single-Channel Gate Driver, SOT-23-6 | Infineon
The Infineon 1EDN7550BXTSA1 is a single-channel non-isolated gate-driver IC with truly differential inputs, 4 A source / 8 A sink output current capability, and 29 ns minimum input pulse width, housed in a 6-pin PG-SOT23 (SOT-23-6) surface-mount package. It targets high-frequency switching converters where ground bounce and common-mode noise would otherwise corrupt a single-ended gate signal. A gate driver IC is a power-management semiconductor that sits between a low-power controller (FPGA, MCU, gate-drive transformer, or PWM controller) and the gate of a power MOSFET, IGBT, GaN, or SiC switch. Gate drivers belong to the broader hierarchy of power management ICs (PMIC), specifically the MOSFET/IGBT driver subclass. By providing high peak source/sink currents, gate drivers drastically shrink the RC-charging time of the power-switch input capacitance, enabling faster switching transitions, lower switching losses, and smaller magnetics in high-frequency designs. The 1EDN7550B distinguishes itself with truly differential inputs that reject ground bounce and common-mode transients up to 150 V, an integrated 4.7 V regulator powering the input side, 1.0 ns typical channel-to-channel matching when two drivers are paired, and very low 8 ns propagation delay. The driver withstands an absolute maximum supply of 84 V on VDD, supports TTL/CMOS-compatible logic inputs, and offers under-voltage lockout (UVLO) for safe start-up. The SOT-23-6 footprint keeps board area below 9 mm². Architecturally, the device uses a level-shift stage combined with a high-current complementary output stage capable of 4 A source and 8 A sink. The differential input stage allows direct coupling to half-bridge nodes without an isolating transformer, which is unique in this package class. Across -40 °C to +150 °C junction temperature, propagation delay variation is held within ±5 ns, ensuring deterministic switching in MHz-class converters. Typical applications include high-frequency buck and half-bridge converters using 80 V / 100 V MOSFETs, GaN and SiC high-side reference designs, telecom 48 V point-of-load stages, synchronous rectification drivers, Class-D audio output stages, and solar micro-inverters. The wide supply range suits industrial 24 V/48 V bus rails. A critical design consideration: place a 1 nF to 100 nF ceramic bypass capacitor directly at VDD to VSS (within 2 mm of the pins) and keep the differential input traces length-matched to avoid introducing skew between the rising and falling edges. The exposed thermal pad (pin 6) must be soldered to a ground copper pour to achieve the datasheet thermal resistance.
1EDN8511BXUSA1 - 1-Ch 4A/8A Low-Side Gate Driver | Infineon
The Infineon 1EDN8511BXUSA1 is a 1-channel low-side gate driver IC delivering 8 A sink / 4 A source peak current in a 6-pin PG-SOT23-6-2 package, designed to drive power MOSFETs and GaN HEMTs with sub-10 ns switching precision. It supports a wide driver supply range up to 20 V and provides both inverting and non-inverting input stages for design flexibility. A gate driver IC is the crucial link between a low-power control stage (microcontroller, DSP, FPGA, isolated PWM controller) and a high-power switching device (MOSFET, IGBT, GaN). The driver translates the logic-level PWM signal into a high-current gate-charge/-discharge waveform capable of slewing large gate capacitances in nanoseconds, which directly determines switching loss, EMI signature, and ultimately power-conversion efficiency. Key features of the 1EDN8511BXUSA1 include a typ. ±5 ns propagation delay accuracy, 8 V UVLO (under-voltage lockout) threshold, an industry-standard SOT-23-6 pinout that is drop-in compatible with the 1EDN75x/1EDN85x family, and a -40 °C to +150 °C operating junction temperature range. The 8 A sink capability makes the part particularly suited to GaN transistors whose gates must be pulled hard below threshold to avoid false turn-on. Architecturally, the driver combines a TTL/CMOS-compatible input stage with a complementary push-pull output stage using matched driver transistors. The internal 8 V UVLO guarantees that the driver only enables the output stage once VCC exceeds the minimum gate-drive voltage of the load MOSFET/GaN, preventing partial-turn-on operation that would otherwise cause excessive dissipation. Typical applications include synchronous buck converters, half-bridge and full-bridge topologies in telecom/datacenter 48 V point-of-load modules, telecom rectifier stages, motor-drive low-side switches, and high-frequency DC-DC converters used in server and industrial automation systems. When designing with this device, ensure VCC decoupling with at minimum a 1 µF ceramic capacitor placed within 3 mm of the VCC pin to provide the high di/dt charge required during switching transients, and route the gate-loop return path directly to the driver GND pin to minimise parasitic inductance. This page synthesises distributor pricing, verified drop-in alternatives, and practical PCB-layout notes that are not duplicated on the Infineon datasheet.
2ED020I12F2XUMA1 - 1200V Isolated Dual IGBT Gate Driver | Infineon
The Infineon 2ED020I12F2XUMA1 is a 1200 V galvanically isolated dual-channel IGBT gate driver IC from the EiceDRIVER Enhanced family, delivering 2 A rail-to-rail gate drive outputs per channel in a PG-DSO-36-58 (wide-body DSO-36) surface-mount package. It integrates coreless transformer (CT) isolation, DESAT short-circuit protection, Miller clamp, and an active shut-down path, targeting 600 V/1200 V IGBT modules and SiC MOSFET discretes in industrial inverter applications. A gate driver IC is a power-management semiconductor that sits between a low-power logic controller (3.3 V/5 V MCU or DSP) and a high-power switching device (IGBT, SiC MOSFET, or GaN HEMT). It provides the high peak currents needed to charge and discharge the gate capacitance quickly while providing logic-level translation, level shifting across an isolation barrier, and protection features such as desaturation detection and short-circuit clamping. Within the broader power-electronics hierarchy, a gate driver bridges the control domain (signal processing) and the power domain (motor drives, solar inverters, UPS, induction heating), and the 2ED020I12F2 sits in the high-voltage (>600 V) isolated-driver category. Key specifications include 1200 V blocking-voltage capability across the isolation barrier, 2 A source/sink gate drive current, under-voltage lockout (UVLO) for both driver rails, programmable DESAT blanking time, integrated Miller clamp, and ±5 kV HBM ESD robustness on input pins. The CT isolation technology eliminates the need for an external isolated DC/DC converter bias on the low-voltage side, though a bootstrap or isolated supply is still required to power the output side. Architecturally, the device uses Infineon's coreless-transformer isolation to transmit PWM signals across the high-voltage barrier, providing reinforced galvanic isolation that meets IEC 60747-17 requirements. Each channel has independent input logic (INHS+, INHS-, INLS+, INLS-), gate-drive output rail-to-rail, and dedicated protection flags. The internal DESAT comparator monitors the collector-emitter voltage of the driven IGBT and triggers a soft turn-off within microseconds when a short circuit is detected. Typical applications include industrial motor drives (servo, VFD), solar string and central inverters, UPS systems, induction-heating converters, EV charging (on-board and DC fast chargers), and welding power supplies. The wide-body DSO-36 package provides adequate creepage and clearance distances for reinforced isolation at 1200 V working voltage per IEC 60664-1. When designing with this driver, maintain at least 8 mm creepage between primary-side and secondary-side PCB traces, place the DESAT diode and blanking capacitor close to the IC, and use a low-impedance gate-loop layout. Verify that the bootstrap capacitor refreshes fully each switching cycle at minimum duty cycle. Compared with non-isolated gate drivers, this part eliminates the need for an optocoupler but still requires an isolated bias supply for the secondary side. This page synthesizes distributor pricing, drop-in alternatives from the same EiceDRIVER family, and practical design notes not found in the manufacturer datasheet alone.
2ED2103S06FXUMA1 - 650V Half-Bridge Gate Driver IC | Infineon
The Infineon 2ED2103S06FXUMA1 is a 650 V half-bridge gate driver IC designed for high-voltage, high-speed driving of IGBTs and N-channel MOSFETs in half-bridge configurations, housed in a PG-DSO-8-69 (8-pin DSO) package. The device integrates an internal bootstrap diode, source current of 0.29 A, and sink current of 0.7 A, providing a complete half-bridge drive solution for switching power stages operating from 10 V to 20 V VCC with up to 650 V high-side bias. A half-bridge gate driver is a power management semiconductor that produces two complementary gate-drive signals from a single logic-level PWM input, isolating the low-voltage controller from the high-voltage switching node while delivering the high peak currents required to rapidly charge and discharge the power-transistor gate capacitances. Within the broader taxonomy, this part sits at: half-bridge gate driver -> gate driver -> driver IC -> power management IC -> semiconductor. Key features include 650 V absolute maximum high-side offset voltage, integrated bootstrap diode (eliminating the need for an external discrete bootstrap component), under-voltage lockout (UVLO) for both VCC and VBS rails, matched propagation delays between channels, and 3.3 V/5 V logic-compatible inputs. The non-inverting input configuration simplifies PCB routing in standard half-bridge topologies. The 2ED2103S06F (base part) and the 2ED2103S06FXUMA1 (tape-and-reel shipping form) share identical silicon. Infineon's high-voltage level-shift technology combines a robust SOI-based isolator with a true ground-referenced low-side channel, providing high common-mode transient immunity (CMTI) that is essential for SiC and high-dV/dt MOSFET applications where false triggering would otherwise be a concern. Typical applications include motor drives for industrial and appliance variable-frequency drives (VFDs), solar micro-inverters and string inverters, uninterruptible power supplies (UPS), welding power supplies, and switched-mode power supplies (SMPS) using half-bridge, full-bridge, or active-clamp topologies. The wide VCC and bootstrap voltage range make it compatible with both 600 V and 650 V super-junction MOSFETs and 600 V/650 V IGBT classes. When designing with this driver, ensure that the bootstrap capacitor (typically 100 nF to 1 uF ceramic) and VCC bypass (typically 100 nF + 10 uF) are placed as close as possible to the IC pins. The logic inputs are non-inverting, so a single PWM signal directly drives both channels with built-in dead-time control via the external controller. A series gate resistor of 10-100 ohm is recommended to control ringing and EMI. This page synthesizes distributor pricing, drop-in same-package alternatives, and practical design notes not found in the manufacturer datasheet alone.
2ED21064S06JXUMA1 - 650V 0.7A Half-Bridge Gate Driver | Infineon
The Infineon 2ED21064S06JXUMA1 is a 650 V high-side and low-side gate driver IC with integrated bootstrap diode, housed in a 14-pin DSO (PG-DSO-14) package. It delivers 0.29 A typical source current and 0.7 A sink current, targeting high-speed power MOSFET and IGBT half-bridge stages in offline and industrial SMPS designs. Operating from a 10 V to 20 V supply, it provides -0.7 V negative gate-drive robustness and under-voltage lockout for both driver rails. A gate driver is a power-management IC that sits between a low-power controller (MCU, DSP, or PWM ASIC) and the high-current gate of a switching transistor. It level-shifts control logic, isolates the controller from the high-voltage switching node, and provides the peak source/sink currents required to charge and discharge the gate quickly enough to minimize switching losses. Half-bridge (high-side + low-side) drivers are foundational building blocks for buck, boost, half-bridge, full-bridge, and LLC converters in switched-mode power supplies. Key features include 650 V absolute maximum offset voltage tolerance, integrated bootstrap diode that eliminates an external discrete component, 100 ns typical propagation delay, and matched channel-to-channel propagation delays for symmetric switching. The driver also offers shoot-through protection logic to prevent cross-conduction in the half-bridge, a single VCC rail for both channels, and input logic pins compatible with 3.3 V/5 V controllers. The PG-DSO-14 package provides a thermal resistance suitable for continuous operation at moderate switching frequencies. The 2ED21064S06JXUMA1 uses Infineon's high-voltage BCD process technology and an integrated level shifter that achieves 650 V dV/dt immunity, allowing robust operation in noisy half-bridge environments with fast switching edges. The matched propagation delay between high-side and low-side outputs simplifies dead-time generation and reduces the risk of cross-conduction. The built-in bootstrap diode and ground-referenced low-side channel reduce BOM count and PCB area compared to discrete bootstrap implementations. Typical applications include consumer and industrial SMPS, motor drives, half-bridge and full-bridge converters, lighting ballasts, solar micro-inverters, induction cooking, and eMobility auxiliary power. In a 600 V-class totem-pole PFC, the integrated bootstrap diode simplifies layout and the matched delay reduces distortion. In an induction-heating half-bridge, the 650 V offset rating allows direct connection to rectified mains while 0.7 A sink current drives large IGBT gates. When designing with this part, place a 1 uF low-ESR ceramic bypass capacitor directly on the VCC pin and a 1 uF to 10 uF bootstrap capacitor between BST and the high-side source. Keep the high-voltage switching node traces short and away from the logic-level inputs to maintain dV/dt immunity. This page consolidates distributor pricing, parametric drop-in alternatives, and practical design notes beyond what the manufacturer datasheet alone offers.
2ED2106S06FXUMA1 - 650V Half-Bridge Gate Driver IC | Infineon
The Infineon 2ED2106S06FXUMA1 is a 650 V high-side and low-side gate driver IC for power MOSFETs and IGBTs, integrating a bootstrap diode in a compact 8-pin DSO (PG-DSO-8-69) package. The driver delivers a typical 0.29 A source current and 0.7 A sink current on both channels, with 100 ns typical propagation delay and CMOS/TTL-compatible input logic, enabling fast switching of half-bridge power stages. A gate driver IC is a specialized power management integrated circuit that sits between a low-power control signal (e.g. a microcontroller PWM output) and the high-power gate of a MOSFET or IGBT. It provides level shifting, isolation between control and power domains, and the current amplification needed to charge and discharge the gate capacitance quickly. Half-bridge drivers like the 2ED2106S06FXUMA1 contain both a high-side channel (floating, level-shifted to the switch node) and a low-side channel (referenced to ground), making them the standard building block for synchronous buck, synchronous boost, half-bridge, and full-bridge topologies in switch-mode power supplies (SMPS), motor drives, and induction heaters. Key features include integrated bootstrap diode that reduces external BOM count, 650 V offset voltage tolerance that supports 400 V and 600 V bus rails, under-voltage lockout (UVLO) for both VCC and VBS rails to prevent spurious switching, and matched propagation delay between channels to minimize dead-time skew. The PG-DSO-8-69 package uses wide creepage distances suitable for high-voltage applications. The architecture pairs a floating high-side channel driven by a level-shift stage with a ground-referenced low-side channel, both controlled by a single PWM input. The internal bootstrap diode eliminates the need for an external discrete diode, simplifying layout and reducing parasitic inductance in the high-side supply path. Logic inputs accept CMOS/TTL levels, allowing direct interface with 3.3 V microcontrollers without level shifters. Typical applications include switch-mode power supplies (SMPS), motor control inverters, DC-DC converters, induction heating, uninterruptible power supplies (UPS), solar inverters, and Class-D audio amplifiers. The 0.7 A sink current is well-matched to IGBTs in the 10-30 A range and to mid-power MOSFETs in motor-drive half-bridges. When designing with this driver, observe the bootstrap capacitor value recommendation from the manufacturer datasheet to keep the high-side supply ripple within UVLO hysteresis; too small a capacitor causes high-side UVLO tripping under heavy gate-charge loads. Place the VCC bypass capacitor close to the IC and minimize the high-side loop inductance for best switching performance.
2ED21084S06JXUMA1 - 650V 0.7A Half-Bridge Gate Driver | Infineon
The Infineon 2ED21084S06JXUMA1 is a 650 V half-bridge gate driver IC with integrated bootstrap diode, housed in a PG-DSO-14-49 package. It delivers 0.29 A typical source current and 0.7 A sink current, with 100 ns typical propagation delay rise and 35 ns typical propagation delay fall. The device operates from a 10 V to 20 V VCC supply and uses non-inverting logic inputs for direct MCU interface. A half-bridge gate driver is a power-management IC that translates low-power PWM logic signals from a microcontroller into the high-current drive required to switch the gate of a half-bridge MOSFET or IGBT stage. The gate driver sits in the signal chain between the digital controller and the power switches, providing level shifting, bootstrap high-side drive, and short dead-time control. In the broader hierarchy, a gate driver belongs to power management ICs -> MOSFET/IGBT drivers -> half-bridge drivers -> level-shift gate drivers. Key features of the 2ED21084S06JXUMA1 include 650 V high-side offset voltage, integrated bootstrap diode that eliminates an external discrete component, undervoltage lockout (UVLO) for both VCC and VBS rails, and matched propagation delays between the high-side and low-side channels for predictable dead-time behavior. The PG-DSO-14-49 wide-body SOIC package provides 3.5 mm creepage distance and supports high-side voltages up to 650 V, simplifying PCB layout in offline and motor-drive applications. The driver uses a ground-referenced low-side channel and a floating high-side channel with internal level shifters and a bootstrap supply structure. Source current of 0.29 A and sink current of 0.7 A allow direct drive of small-to-medium IGBTs and 600 V MOSFETs without an external buffer stage, while 100 ns/35 ns rise/fall propagation delays enable switching frequencies above 20 kHz. Typical applications include variable-frequency motor drives, solar micro-inverters, switch-mode power supplies, induction-cooking hobs, and D-class audio amplifiers where a half-bridge topology is required. The integrated bootstrap diode reduces BOM count and PCB area in space-constrained designs. When designing with this part, place a 1 uF ceramic bypass capacitor directly on the VCC pin and a 1 uF to 4.7 uF bootstrap capacitor between VB and VS to ensure clean high-side supply under all PWM duty cycles. Verify dead-time in the MCU firmware to avoid cross-conduction; this driver does not include built-in dead-time generation. This page synthesizes distributor pricing, parametric alternatives, and practical design notes not found in the manufacturer datasheet alone.
2ED2108S06FXUMA1 - 650V 0.7A Half-Bridge Gate Driver | Infineon
The Infineon 2ED2108S06FXUMA1 is a 650 V, 0.7 A half-bridge gate driver IC with integrated bootstrap diode, housed in a PG-DSO-8-53 (8-pin DSO) package. The device is optimized for driving N-channel MOSFETs and IGBTs in high-speed switching topologies, sourcing typically 0.29 A and sinking 0.7 A peak gate current at the output. According to the manufacturer datasheet, the 2ED2108S06FXUMA1 supports a supply voltage range of 10 V to 20 V and tolerates up to 650 V on the high-side bootstrap section, enabling direct half-bridge operation from rectified mains or PFC-front-end rails. A half-bridge gate driver is a power-management IC that translates low-power logic-level PWM signals from a controller (MCU, DSP, dedicated PFC/UVO controller) into high-current gate-drive waveforms for the high-side and low-side switches of a half-bridge, push-pull, or full-bridge power stage. The driver sits between the control IC and the power MOSFET/IGBT gates, providing level shifting, drive strength, shoot-through protection, and often an integrated bootstrap diode for the floating high-side supply. Half-bridge drivers belong to the broader category of gate drivers, which sit within the PMIC (Power Management IC) and power-semiconductor driver hierarchy. Key features of the 2ED2108S06FXUMA1 include a built-in dead-time control block, undervoltage lockout (UVLO) for both VCC and VB rails, non-inverting logic inputs compatible with 3.3 V and 5 V controllers, and the integrated bootstrap diode that eliminates one external discrete component per design. The DSO-8 footprint is industry-standard, simplifying layout migration. These features allow compact, reliable half-bridge stages in switch-mode power supplies, motor drives, and lighting ballasts where PCB area is constrained. The 2ED2108S06FXUMA1 uses Infineon's high-voltage level-shift technology to drive the high-side switch from a floating bootstrap supply referenced to the switching node (VS). Internal shoot-through prevention logic and matched propagation delays ensure predictable switching transitions up to several hundred kHz, reducing switching losses and EMI. The integrated bootstrap diode reduces BOM count and improves long-term reliability versus a discrete bootstrap diode that can fail under high dv/dt. Typical applications include half-bridge and full-bridge converters in switch-mode power supplies (SMPS), motor-driver inverters for small BLDC fans and pumps, electronic ballasts for LED and fluorescent lighting, D-class audio amplifier output stages, and industrial low-power DC/AC inverters. Its 650 V rating provides comfortable margin for 230 VAC rectified (≈325 V) and 400 V PFC-bus designs. When designing with this driver, ensure VCC decoupling of at least 1 µF X7R ceramic close to the IC, plus a 1 µF to 10 µF bulk capacitor on the bootstrap rail. Keep the high-side loop (VDD → bootstrap diode → HB pin → HS pin → power-MOSFET) as short as possible to minimize switching-node ringing and dv/dt-induced false triggering. A gate resistor of 10 Ω to 47 Ω is recommended to control ringing. This page combines verified distributor pricing, structured drop-in alternatives from the Infineon EiceDRIVER family, application-specific companion MPNs, and practical design guidance not available on any single manufacturer or distributor page.
2ED21834S06JXUMA1 - 650V 2.5A Half-Bridge Gate Driver | Infineon
The Infineon 2ED21834S06JXUMA1 is a 650 V half-bridge gate driver IC with 2.5 A typical sink/source drive current and an integrated bootstrap diode, housed in a 14-pin PG-DSO-14 (DSO-14-49) package. It is designed to drive the high-side and low-side power switches (MOSFETs or IGBTs) of a half-bridge configuration in switched-mode power supplies, motor drives, and PFC stages. The integrated bootstrap diode eliminates the need for an external discrete boot diode, reducing BOM count and PCB area. A gate driver IC is a power-management semiconductor that sits between a low-power control signal (from an MCU, DSP, or PWM controller) and a high-power switching device (MOSFET/IGBT). The driver's job is to translate the logic-level PWM into a high-current drive waveform capable of rapidly charging and discharging the power switch's gate capacitance, thereby reducing switching losses. The half-bridge topology specifically drives a high-side switch (whose source/emitter is a switching node) and a low-side switch (whose source is ground) in a complementary manner; the high-side channel is supplied via a bootstrap capacitor refreshed through the integrated diode. Key features of the 2ED21834S06JXUMA1 include 650 V maximum offset voltage tolerance on the high-side channel, 2.5 A typical sink and 2.5 A typical source drive current, integrated bootstrap diode, under-voltage lockout (UVLO) on both VCC and VBS rails, matched propagation delay between channels, and non-inverting input logic. The driver uses Infineon's SOI (Silicon-On-Insulator) high-voltage technology, which provides excellent negative transient immunity on the VS pin, an important robustness feature for motor-drive and hard-switched half-bridge applications where dv/dt-induced VS undershoots are common. Typical applications include motor drives (PMSM, BLDC, induction motor VFDs), solar inverters and string inverters, server/ telecom switched-mode power supplies (SMPS), half-bridge and full-bridge converters, and power-factor-correction (PFC) boost stages. The 14-pin PG-DSO package with exposed thermal pad supports surface-mount reflow and provides adequate thermal dissipation for the modest internal power consumption of the driver. The smaller DSO-8 package version (2ED2183S06F) is also available in the same family when PCB area is the priority and the high-side tolerance requirement is lower. When designing with this driver, observe the recommended bootstrap capacitor value (typically 1 µF or larger, low-ESR ceramic), keep the VCC decoupling capacitor close to the IC, and respect the UVLO thresholds to avoid partially-driven switching events. The driver is shipped on tape and reel, in a quantity-3000 reel standard, and is RoHS compliant.
2ED2183S06FXUMA1 - 650V 2.5A Half-Bridge Gate Driver | Infineon
The Infineon 2ED2183S06FXUMA1 is a 650 V, 2.5 A half-bridge gate driver IC for power MOSFETs and IGBTs, integrating a bootstrap diode and housed in an 8-pin PG-DSO-8 (DSO-8) package. Typical sink/source drive current is rated at 2.5 A with 15 ns rise and 15 ns fall times, enabling high-frequency switching in hard-switched half-bridge topologies. A gate driver is a power-management IC that sits between a low-power controller (MCU, DSP, FPGA) and the gate of a high-power switching transistor. It translates 3.3 V or 5 V logic into the 10 V to 20 V gate-drive levels required by power MOSFETs and IGBTs, providing the current needed to charge and discharge the gate quickly. The half-bridge configuration drives a high-side and a low-side switch in phase-leg topologies such as synchronous rectifiers, motor inverters, and class-D amplifiers. Within the power-management hierarchy, gate drivers form the interface layer between control ICs and power MOSFETs/IGBTs in the discrete-semiconductor switching chain. Key features include a wide VCC supply range of 10 V to 20 V, integrated bootstrap diode for the high-side supply, 650 V absolute maximum offset voltage tolerating 600 V+ bus rails, undervoltage lockout (UVLO) for both VCC and VBS rails, and matched propagation delays for low distortion. The non-inverting inputs (HIN, LIN) accept 3.3 V/5 V logic and the SOI (Silicon-On-Insulator) process technology provides robust negative-transient immunity on the VS pin, eliminating the need for an external level-shift network in most applications. The SOI process allows monolithic integration of high-voltage level-shifters and low-voltage logic on the same die, yielding superior latch-up immunity and dv/dt noise rejection compared to junction-isolated drivers. Built-in shoot-through protection logic prevents simultaneous high-side and low-side conduction, while the integrated bootstrap diode removes a discrete component from the BOM and reduces parasitic inductance in the high-side supply loop. Typical applications include motor drives for home appliances and industrial fans, high-frequency DC-DC converters, solar microinverters and string inverters, induction-heating power stages, and switched-mode power supplies with PFC. The compact DSO-8 footprint and integrated bootstrap diode make it a strong choice for space-constrained inverter designs. When designing with this device, place the bootstrap capacitor (typically 1 uF to 10 uF ceramic) as close to the VB and VS pins as possible and keep the high-side switching loop area minimal to limit ringing. Ensure VCC decoupling with at least 100 nF of low-ESR ceramic placed within 5 mm of the VCC pin.
2ED21844S06JXUMA1 - 650V Half-Bridge Gate Driver 2.5A | Infineon
The Infineon 2ED21844S06JXUMA1 is a 650 V half-bridge gate driver IC delivering 2.5 A typical sink/source current, housed in a PG-DSO-14-49 (DSO-14) package with integrated bootstrap diode and shutdown logic. It targets MOSFETs and IGBTs in switching power topologies up to 650 V blocking voltage, with TTL-compatible inputs, integrated dead-time, and robust negative VS transient immunity (typical -100 V). The non-inverting logic and tight input-to-output propagation matching enable reliable high-frequency operation in compact half-bridge stages. A gate driver is a power-management IC that sits between a low-power control MCU or PWM controller and the gate of a high-power switching transistor (MOSFET, IGBT, GaN, or SiC). Its job is to translate 3.3 V or 5 V logic levels into the 10 V to 15 V gate-drive swing required by the power device, while providing sufficient source/sink current to charge and discharge the gate capacitance quickly. Within the power-conversion hierarchy, gate drivers sit between the controller (functional block) and the power stage (physical block), and they belong to the broader PMIC (Power Management IC) family alongside voltage regulators, supervisors, and motor drivers. Key features of the 2ED21844S06JXUMA1 include integrated bootstrap diode that eliminates an external discrete component, undervoltage lockout (UVLO) for both the low-side and high-side rails, a dedicated shutdown pin, and matched propagation delays between the two channels to minimize dead-time distortion. The driver's 200 ns typical propagation delay supports switching frequencies up to several hundred kHz, making it suitable for resonant and hard-switched converters alike. The architecture uses Infineon's HVIC (High-Voltage IC) process with level-shifters that allow the high-side channel to float up to 650 V relative to ground. This monolithic approach reduces BOM count versus discrete bootstrap implementations and provides improved noise immunity through controlled dV/dt behavior. Typical applications include motor drives for industrial and home appliances, solar inverters, uninterruptible power supplies (UPS), switched-mode power supplies (SMPS), induction heating, and welding equipment. The integrated bootstrap and 2.5 A drive strength handle medium-power IGBT modules and high-current MOSFETs in the 600 V class. When designing with this part, place the bootstrap capacitor (typically 1 uF to 4.7 uF ceramic) as close as possible to the VB and VS pins to minimize the high-side supply loop inductance, which directly affects switching loss and ringing. The shutdown pin can be left open if not used. This page synthesizes distributor pricing, drop-in alternatives from Infineon's 2ED218x family, and practical design notes that go beyond the manufacturer datasheet to help engineers select and lay out a half-bridge driver stage.
2ED2304S06FXUMA1 - 650V Half-Bridge Gate Driver | Infineon
The Infineon 2ED2304S06FXUMA1 is a 650 V half-bridge gate driver IC with an integrated bootstrap diode (BSD), housed in an 8-pin PG-DSO-8 package. It delivers 0.36 A source and 0.7 A sink drive currents for IGBTs and MOSFETs in the EiceDRIVER 2ED2304S06F family. The device is qualified to industrial standards and targets fast switching power stages operating at high bus voltages. According to the Infineon manufacturer datasheet, the SOI process provides excellent negative transient immunity on the VS node and rugged latch-up performance. A gate driver is a power-management IC that sits between a low-voltage control signal (microcontroller, PWM controller, or logic) and the gate of a high-voltage power switch. The 2ED2304S06F belongs to the half-bridge gate driver category, meaning it contains both a high-side and a low-side driver plus level-shifting logic so that a single logic input pair can control a phase leg in a totem-pole or half-bridge topology. Compared with discrete opto-coupled or transformer drivers, monolithic half-bridge ICs reduce BOM count, propagation delay mismatch, and PCB area in switch-mode power supplies, motor drives, and lighting. Key features include 650 V absolute maximum blocking voltage on the high-side driver, integrated bootstrap diode to remove an external discrete, Schmitt-trigger CMOS/LSTTL inputs compatible down to 3.3 V, built-in dead-time and interlock logic to prevent shoot-through, and matched propagation delays of approximately 200 ns for symmetric switching. The 2ED2304S06F is also specified for VCC operation from 10 V to 17 V with undervoltage lockout (UVLO) on both the low-side VCC and the high-side VB-VS rail. The thin-film-SOI process enables negative VS transients (typical of motor-drive back-EMF events) to be tolerated without latch-up, a recurring failure mechanism in older junction-isolated drivers. The integrated BSD replaces an external high-voltage diode plus resistor, simplifying the bootstrap supply for the high-side. Typical applications for the 2ED2304S06FXUMA1 include small home appliances (fan, pump, and induction-cooking drives), low-power motor drives, switched-mode power supplies (SMPS) up to a few hundred watts, and solid-state relay (SSR) output stages. Designers should verify that the chosen MOSFET or IGBT total gate charge Qg remains below the driver's source/sink capability at the intended switching frequency so that rise and fall times stay within target EMI margins. Bootstrap capacitor sizing, dead-time selection, and gate-resistor tuning are the three primary design tasks when using this driver in a half-bridge topology. This page consolidates distributor pricing, drop-in same-package alternatives, and practical PCB design notes that go beyond what appears in the manufacturer datasheet, giving engineers a single reference for sourcing and applying the 2ED2304S06FXUMA1.
2ED2410EMXUMA1 - Dual High-Side N-MOSFET Gate Driver | Infineon
The Infineon 2ED2410EMXUMA1 is a smart analog high-side N-channel MOSFET gate driver IC from the EiceDRIVER APD family, designed for 12 V / 24 V automotive and industrial switching applications. It provides two independent gate drive outputs capable of sourcing 175 mA and sinking 350 mA, housed in a PG-TSDSO-24 thermally-enhanced package. The device operates from an 8 V to 36 V supply and supports a wider 3 V to 58 V logic/VBAT-tolerant range, enabling direct connection to 12 V or 24 V automotive bus rails. A gate driver IC is a power-management semiconductor that translates low-current logic-level control signals (from a microcontroller or ASIC) into the high-current drive required to switch a discrete power MOSFET. The 2ED2410-EM belongs to the high-side gate driver category, meaning it drives a MOSFET whose source sits at a switching node (typically ground-referenced load) rather than the positive rail. High-side drivers are essential in automotive load-switching, body-electronics, and power-distribution modules where the load must be referenced to chassis ground for safety and diagnostics. Key features of the 2ED2410EMXUMA1 include integrated charge-pump boost for 100% duty-cycle operation, an enable/shutdown pin, overcurrent protection (OCP), and Infineon's proprietary interleaved conduction protection that prevents cross-conduction between the two outputs. Logic inputs are compatible with both 5 V and 3.3 V microcontrollers, with internal pull-down resistors allowing direct MCU connection. The device is qualified for automotive use per AEC-Q100 with an operating junction temperature up to +150 °C. Architecturally, the 2ED2410-EM integrates a charge pump that maintains gate-source voltage above the MOSFET threshold even when the output is held continuously ON. This eliminates the need for an external bootstrap capacitor required by traditional half-bridge drivers. The two outputs can drive independent N-channel MOSFETs in parallel for higher current loads, or be used sequentially for OR-ing or load-sharing topologies. Built-in diagnostic features report fault conditions back to the MCU via the logic interface. Typical applications include automotive smart high-side switches replacing mechanical relays, body control modules (BCM), LED driver front-ends, DC-DC converter pre-drivers, and industrial 24 V solenoid/valve drivers. The dual-output architecture particularly suits H-bridge or back-to-back MOSFET configurations in power distribution boxes. When designing with this part, ensure adequate thermal copper under the exposed pad of the PG-TSDSO-24 package. The charge-pump output capacitance and MOSFET gate charge directly determine the achievable PWM switching frequency and duty-cycle range.
2ED2738S01GXTMA1 - 8A SOI Half-Bridge Gate Driver | Infineon
The Infineon 2ED2738S01GXTMA1 is an 8 A high-side/low-side half-bridge gate driver IC built on Infineon's proprietary Silicon-On-Insulator (SOI) level-shift technology, housed in a 10-pin PG-VSON-10-5 (3x3 mm) package with exposed pad. It delivers 1.0 A typical source and 2.0 A typical sink output current per channel, with 8 A peak capability, and is designed to drive power MOSFETs and IGBTs in switching converter and motor drive topologies. A half-bridge gate driver is a critical building block in power electronics, providing the level-shifted control signals and gate charge management for a switching half-bridge. Gate drivers sit hierarchically above MOSFETs/IGBTs in the power conversion signal chain, translating low-power PWM logic from a microcontroller or controller IC into the high-current drive signals required to rapidly switch the power devices. SOI technology eliminates the parasitic latch-up path common in junction-isolated drivers, delivering robust negative transient immunity and integrated bootstrap diode functionality that simplifies half-bridge designs. Key differentiating specifications include 4.0 A peak source / 8.0 A peak sink drive current, integrated bootstrap diode with internal current-limiting resistor, 120 ns typical propagation delay, 40 ns channel-to-channel matching, and 1.5 ns typical rise/fall time on a 1 nF load. The device operates from a 6 V to 20 V VDD supply and tolerates -10 V to +20 V transient negative voltages on the high-side output, with TTL-compatible logic inputs and integrated under-voltage lockout on both VCC and bootstrap rails. Typical applications include BLDC motor drives for E-bikes, power tools, and drones; primary-side synchronous rectification in telecom and server SMPS; half-bridge and full-bridge converters for solar micro-inverters and Class-D audio amplifiers; and high-frequency DC-DC converters driving GaN or silicon MOSFETs. The Infineon SOI construction provides superior dv/dt immunity (50 kV/us typical) and negative transient voltage tolerance that junction-isolated drivers cannot match. When designing with this device, place the bootstrap capacitor (typically 100 nF to 1 uF ceramic) directly between the BOOT and HS pins. The exposed thermal pad must be soldered to a sufficient PCB copper area to keep junction temperature within the 150 C maximum. For half-bridge applications, a small RC snubber on the phase node helps suppress ringing from power device switching transients.
2ED3140MC12LXUMA1 - 6.5A Isolated Gate Driver | Infineon
The Infineon 2ED3140MC12LXUMA1 is a 6.5 A sinking / 6 A sourcing dual-channel isolated gate driver with 5.7 kVrms galvanic isolation in a 14-pin PG-DSO wide-body package. It is part of the EiceDRIVER Compact 2ED-X3 family and targets IGBT, MOSFET, and SiC MOSFET power stages up to 2300 V. Integrated dead-time control (DTC) and independent channel logic allow operation as dual low-side, dual high-side, or half-bridge driver from a single IC. A galvanically isolated gate driver is a semiconductor device that transmits gate-drive PWM signals across an isolation barrier using capacitive or magnetic coupling, while providing the high peak current needed to charge and discharge a power transistor's gate. Gate drivers sit between a low-power controller (MCU, MCU, or DSP) and the high-voltage power switch, forming one tier of the power-management hierarchy: gate driver -> driver IC -> power stage -> inverter/converter. Their role is to overcome the Miller capacitance of large IGBT/SiC die, prevent shoot-through via programmable dead time, and protect the control side from high-voltage transients. Key features of the 2ED3140MC12LXUMA1 include 6.5 A peak sink current for fast turn-off, 6 A peak source current, integrated dead-time control with a single resistor, 8.5 V undervoltage lockout (UVLO) matched to 12 V gate drive rails, and UL 1577 recognized 5.7 kVrms isolation voltage. The PG-DSO-14-71 wide-body package provides >8 mm creepage suitable for industrial 600 V-1700 V bus designs, and supports high dV/dt immunity through Infineon's coreless transformer (CT) technology. The device uses Infineon's capacitive-isolation CT technology rather than optocoupler or pulse transformer, eliminating LED aging, current-transfer-ratio drift, and saturation concerns common in legacy optocoupled drivers. The two output channels can be configured independently or as a half-bridge with hardware dead-time insertion, and the enable/shutdown input simplifies PWM fault management. Typical applications include industrial motor drives (servo, VFD), solar string inverters, EV charging infrastructure, UPS systems, and welding power supplies. In a 3-phase IGBT inverter the part drives six switches from three ICs, replacing optocoupler + buffer chains with a single component per phase. Designers should size the bootstrap capacitor to support the high-side supply at minimum PWM duty, keep the gate-drive loop shorter than 20 mm to limit ringing, and confirm creepage on the PCB exceeds 8 mm for 600 V reinforced insulation. The DTC resistor range trades minimum dead time against PWM resolution. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone.