Power MOSFET Drivers
Products (426)
BTG70902EPLXUMA1 - 2A PROFET+2 12V Smart High-Side Switch | Infineon
The Infineon BTG70902EPLXUMA1 is a 2 A single-channel smart high-side power switch from the PROFET+2 12V family, housed in a PG-TSDSO-14 package with an exposed thermal pad. It is designed for automotive 12 V load-driving applications and integrates one N-channel MOSFET output stage with a 1:1 input-to-output ratio, providing continuous load current up to 2 A with fixed current limiting and comprehensive on-chip protection. The device targets resistive, inductive, and capacitive loads in body electronics modules. A smart high-side switch, also called a PROFET (Protected MOSFET), is a self-protected power semiconductor that combines a power MOSFET driver with diagnostic and protection logic in a single package. It sits between a microcontroller and a grounded load, replacing discrete relay or fuse circuits. Within the broader product hierarchy it belongs to power distribution switches, then power management ICs, then semiconductor ICs. The PROFET+2 12V generation emphasizes low standby current, accurate current sense, and AEC-Q100 automotive qualification. Key features include fixed current limiting, short-circuit protection, over-temperature shutdown with latch behavior, over-voltage and under-voltage lockout, reverse battery protection, and slew-rate control for EMI mitigation. The integrated diagnostic interface reports fault status to the host MCU through the DEN pin, while the DSEL pin selects the active channel and the IN pin enables the output. These functions reduce external component count compared with discrete MOSFET designs. The BTG70902EPLXUMA1 uses a vertical N-channel DMOS output structure driven by a CMOS control block containing charge pump, bandgap reference, gate driver, and protection comparators. This monolithic integration enables fast fault response (typically microseconds) and consistent protection thresholds across temperature. The exposed pad of the PG-TSDSO-14 package provides a low thermal resistance path, supporting continuous 2 A operation on moderate PCB copper area without external heatsinking. Typical applications include automotive lighting (interior LED modules, tail lamps, courtesy lights), body control modules driving small motors and solenoids, heating elements such as seat heaters and mirror heaters, and resistive loads like reference grounds. The diagnostic output is particularly useful in ECU designs that require ISO 26262-style fault monitoring or end-of-line load verification. When designing with the BTG70902EPLXUMA1, follow Infineon PROFET application guidelines for input capacitor selection, PCB copper area, and reverse-battery protection. Use the DEN pin in normal-low idle mode to minimize quiescent current; do not leave IN floating, as this may cause undefined output behavior. This page synthesizes Infineon datasheet parameters, distributor pricing across DigiKey, Mouser, LCSC and Octopart, and engineering design considerations not found in any single source.
BTH60351EPLXUMA1 - 35mĪ© 60V Smart High-Side Switch | Infineon
The Infineon BTH60351EPLXUMA1 is a 35 mĪ© single-channel smart high-side power switch from the PROFETā¢ + 48V family, housed in a PG-TSDSO-14 exposed-pad package. It is built around an N-channel vertical power MOSFET with an integrated charge pump and provides up to 5 A continuous load current with adjustable current limitation, current-sense diagnosis, and comprehensive protective functions for 8 V to 60 V board nets (48 V automotive systems). A smart high-side switch is a semiconductor relay that connects a load (lamp, solenoid, motor winding, LED string) to the battery rail while the low-side control logic operates at 3.3 V or 5 V. Within the broader product taxonomy, the BTH60351EPLXUMA1 belongs to the high-side switch (HSS) family, which sits under power distribution switches (PDS), which in turn belong to power management ICs and ultimately the semiconductor category. Compared to a discrete MOSFET plus fuse, an integrated HSS adds diagnosis, slew-rate control, and self-protection without external components. Key features include a 35 mĪ© typical on-state resistance at 25 Ā°C, 3.3 V/5 V compatible logic inputs, electrostatic discharge (ESD) protection, optimized electromagnetic compatibility (EMC), very low standby current, and an analog current-sense pin (IS) for load diagnostics. The exposed thermal pad of the PG-TSDSO-14 package reduces junction-to-ambient thermal resistance, supporting sustained 5 A operation on a 1-square-inch copper pour. Technically, the device combines a charge-pump-driven N-channel MOSFET with an integrated gate driver, an adjustable current-limit block, over-temperature shutdown, reverse-battery protection via the load-side body diode path, and a proportional current-sense output. The 35 mĪ© RDS(on) keeps conduction losses at roughly 0.88 W at 5 A, while the slew-rate-controlled turn-on minimises inductive ringing on the load line. Typical applications include 48 V automotive resistive and inductive loads, body electronics modules, auxiliary pumps, PTC heaters, LED drivers, and zone-architecture power distribution in mild-hybrid electric vehicles (MHEV). The wide 8-60 V input range also supports 24 V industrial loads. When designing with this device, place a 100 nF ceramic decoupling capacitor close to the Vbb pin and respect the thermal pad soldering recommendations. Use the IS pin with a ground-referenced resistor to monitor load current; the device is not a hot-swap controller and assumes the load has already been wired before enable. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone.
BTH60702EPVXUMA1 - 60 mĪ© Dual High-Side Switch 1.7A | Infineon
The Infineon BTH60702EPVXUMA1 is a 60 mĪ© dual-channel smart high-side power switch from the PROFET + 48V family, housed in a PG-TSDSO-14 package with exposed pad. It is rated for 1.7 A continuous current per channel and operates from a 48 V automotive board net, integrating an N-channel vertical power MOSFET with charge pump, comprehensive protection functions, and current-sense diagnosis. A high-side switch is a power distribution switch that sits between the supply rail and the load, allowing the load to be turned on/off by a low-voltage control signal while protecting the wiring harness from faults such as over-current, short-circuit, over-voltage, and reverse battery. Within the broader component taxonomy, the BTH60702EPVXUMA1 sits in the smart high-side switch (intelligent power switch, IPS) family, which descends from discrete MOSFETs and power distribution switches and integrates them with logic, sense, and protection in a single device. This integration reduces PCB area, simplifies wiring harness design, and improves diagnostic coverage in body and powertrain ECUs. Key features include a typical on-state resistance of 60 mĪ© per channel, dual independent 1:1 N-channel outputs, current-sense analog feedback for load diagnosis, integrated charge pump for full N-channel drive, and protection against over-load, short-circuit, over-voltage, reverse battery, and thermal shutdown. The PG-TSDSO-14 package with exposed pad provides a low thermal resistance path that sustains 1.7 A continuous per channel in automotive temperature classes. Typical applications include automotive lighting (headlamps, tail lamps, indicator LEDs), resistive and inductive body loads (seat heaters, mirror heaters, washer pumps), 48 V board-net zonal modules, and zone-ECU power distribution in mild-hybrid and 48 V vehicles. The device's current-sense output also enables predictive maintenance and open-load detection at standstill. When designing with this part, ensure that the exposed pad is soldered to a sufficiently large copper area (typically 1 cmĀ² or more) to keep junction temperature within the automotive -40 Ā°C to +150 Ā°C range under worst-case load. The IN pins of both channels should be tied to the same supply; if independent supplies are required, two separate BTH6070-2EPV devices must be used. This page synthesizes distributor stock, drop-in same-family cross-references, and application guidance not found in the manufacturer datasheet alone.
BTH60801EPLXUMA1 - 80mĪ© 48V Smart High-Side Switch | Infineon
The Infineon BTH60801EPLXUMA1 is a 80 mĪ© single-channel smart high-side power switch housed in a PG-TSDSO-14 package with exposed pad, designed for 48 V automotive board nets. It integrates an N-channel vertical power MOSFET with charge pump, providing 2.5 A continuous load current capability and comprehensive protection functions including adjustable current limitation. A high-side switch is a power distribution topology where the switch sits between the supply rail and the load, enabling ground-referenced loads, inrush-current control, and fault isolation. Within the broader taxonomy, this device belongs to the smart high-side switch family, itself a subcategory of power distribution switches and MOSFET driver ICs used in automotive body electronics and 48 V board-net systems. Key features include an 80 mĪ© typical on-state resistance (RDS(on)), a wide operating voltage range of 4 V to 54 V supporting 48 V board nets, and built-in diagnostic feedback through a current sense (IS) pin. The device also offers overtemperature, overvoltage, and undervoltage protection with autorestart behavior, plus active-high and active-low input logic for flexible microcontroller interfacing. The integrated charge pump drives the gate of the N-channel MOSFET above the battery rail, achieving true low-loss high-side switching. The exposed pad on the PG-TSDSO-14 package reduces thermal resistance, enabling continuous load currents up to the rated 2.5 A without external heatsinking in typical automotive ambient conditions. Typical applications include 48 V automotive lighting control, HVAC blower and resistor drives, auxiliary power distribution modules, and zone-ECU load management. The 48 V board-net compatibility makes it particularly suited to mild-hybrid and 48 V-only vehicle subsystems where 12 V legacy switches are inadequate. When designing with this device, ensure the PCB copper pour under the exposed pad is maximized to keep junction temperature within safe limits under sustained 2.5 A loads. The IS pin must be connected to a microcontroller ADC through an external resistor divider matched to the ADC reference voltage. This page synthesizes distributor pricing, drop-in alternative cross-references, and practical 48 V high-side switch design guidance not found in the manufacturer datasheet alone.
BTH61002EPAXUMA1 - 2x 200mOhm 60V 48V Auto High-Side Switch | Infineon
The Infineon BTH61002EPAXUMA1 is a dual-channel (2 x 1:1) N-channel smart high-side power switch in the PROFET + 48V family, housed in a PG-TSDSO-14 exposed-pad package and rated for 2.0A continuous load per channel. It is designed for use in 48V automotive board nets and integrates a vertical N-channel power MOSFET with a charge pump that provides comprehensive protection and diagnostic functions, including current sense, thermal shutdown, and configurable current limitation. What is a smart high-side switch? A smart high-side switch is a semiconductor relay that sits between the supply rail and the load, replacing a mechanical relay or discrete MOSFET plus fuse arrangement. It uses an N-channel MOSFET on the high side and a charge pump to drive the gate above the battery rail, allowing the load to be PWM-controlled and continuously diagnosed for open-wire, short-to-battery, short-to-ground, and overtemperature faults. These devices belong to the power distribution and power management IC hierarchy and are designed specifically for harsh automotive environments, typically qualified to AEC-Q100 and supporting load currents from a few hundred milliamps up to tens of amps. Key features of the BTH61002EPAXUMA1 include a typical on-state resistance of 200 mOhm per channel, a 60V maximum load-dump capability, and a 54V nominal supply rating that makes it compatible with modern 48V mild-hybrid vehicle electrical systems. The device offers active-high and active-low input logic variants, precise current-sense diagnostic output for fault detection, and an adjustable current-limit function that lets the designer trade off transient surge capability against sustained fault current. The BTH61002EPAXUMA1 uses a vertical N-channel power MOSFET architecture combined with an integrated charge pump and CMOS control logic on a single die. The PG-TSDSO-14 package with exposed thermal pad delivers a low junction-to-ambient thermal resistance, allowing sustained 2.0A per channel operation without external heatsinking. Two independent channels share a common supply pin but have separate input, output, and diagnostic pins, making the part functionally equivalent to two single-channel PROFET devices in one footprint. Typical applications include 48V zonal architectures, 48V eBike and mild-hybrid power distribution, body control modules driving lighting and heating loads, and any automotive 48V load requiring diagnostic feedback to the ECU. It is also used in industrial 48V systems where AEC-Q100-grade robustness is desired. When designing with this device, derate the load current with ambient temperature using the SOA curves and ensure the exposed pad is soldered to at least 1 cmĀ² of copper for adequate thermal dissipation. The current-sense pin must be connected to a precise ground-referenced resistor to retain diagnostic accuracy. This page synthesizes distributor pricing, AEC-Q100 packaging variants, and practical 48V board-net design notes that go beyond the manufacturer datasheet to accelerate component selection.
BTH62001ENAXUMA1 - 48V 200mĪ© 1.7A Smart High-Side Switch | Infineon
The Infineon BTH62001ENAXUMA1 is a 1-channel automotive PROFETā¢ + 48V smart high-side switch in a PG-TDSO-8-31 package, integrating a 200 mĪ© (typical @ 25 Ā°C) N-channel power MOSFET with comprehensive protection and diagnostic features. It is rated for an operating voltage range of 8 V to 60 V, delivers up to 1.7 A continuous load current, and supports the modern 48 V board-net architectures used in mild-hybrid and high-power auxiliary vehicle systems. A smart high-side switch is a type of power distribution switch (PDS) that replaces an electromechanical relay, fuse and discrete MOSFET circuit by integrating the power transistor, gate driver, current sensing, and protection logic into a single monolithic IC. The PROFETā¢ + 48V family sits within the broader power management IC hierarchy as a protected power switch IC, which itself falls under the umbrella of automotive power distribution and load-driving semiconductors. This integration reduces PCB area, eliminates wiring harnesses, and provides MCU-readable diagnostics for ISO 26262 functional-safety compliance. Key features of the BTH62001ENAXUMA1 include a 200 mĪ© on-state resistance, very low standby current, configurable current-limit and over-temperature shutdown, dedicated fault feedback, and a current-sense pin that delivers a proportional analog output proportional to the load current. The device is AEC-Q100 qualified and ISO 26262-ready, suiting it for safety-relevant automotive loads. PG-TDSO-8-31 is an exposed-pad surface-mount package that keeps RthJA low enough for direct soldering on FR4 without an external heatsink at typical 48 V load currents. Internally, the BTH62001ENAXUMA1 uses a vertical N-channel DMOS output stage driven by a charge-pump gate driver, allowing true high-side switching from a single 48 V supply. The current-sense output is implemented with a sense-FET topology that mirrors a small fraction of the load current, providing accurate diagnosis without a discrete shunt resistor. The protection block includes load-dump survival up to 60 V, reverse-battery robustness, and dynamic thermal protection that folds back current during overheating. Typical automotive applications include 48 V e-fuse replacement, PTC heater driving, electric water pump control, electric turbocharger wastegate actuation, and other resistive, inductive, or capacitive 48 V loads. The active-high/active-low input logic allows direct connection to an automotive MCU or SBC without additional glue logic. For optimal thermal performance, the exposed pad must be soldered to a copper area of at least 1 cmĀ² on the PCB. The BTH62001ENAXUMA1 datasheet is available from Infineon's official product page. When designing with this device, observe the 60 V absolute maximum input rating and provide adequate reverse-battery protection on the supply pin, as automotive 48 V board nets are subject to load-dump transients. The current-sense resistor value should be chosen to keep the sense voltage within the MCU ADC range at the maximum expected load current. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
BTH62004ESAXUMA1 - 4-Ch 200mĪ© 48V Smart High-Side Switch | Infineon
The Infineon BTH62004ESAXUMA1 is a 4-channel smart high-side power switch from the PROFET+ 48V family, providing four independent N-channel vertical power MOSFET outputs with 200 mĪ© on-state resistance per channel in a PG-TSDSO-24-21 exposed-pad package. Each channel delivers 1 A continuous load current and is designed for 48 V automotive board nets, with comprehensive protection functions including current sense diagnosis, over-temperature shutdown, over-voltage clamp, and reverse-battery robustness. The device is qualified for automotive use and targets 48 V mild-hybrid and board-net applications where multiple resistive or inductive loads must be driven independently with diagnostic feedback. A high-side smart switch is a type of power distribution switch that sits between the supply rail and the load, integrating the power MOSFET, gate driver, protection circuitry, and diagnostic feedback into one IC. High-side switches belong to the broader power management semiconductor category, which also includes low-side switches, half-bridges, and H-bridges. Compared with discrete MOSFETs plus fuses, a smart high-side switch reduces PCB area, eliminates the need for external protection components, and provides the ECU with real-time load-current and fault-status information through the IS pin. Key features include 200 mĪ© typical RDS(on) per channel at 25 Ā°C, 1 A nominal load current per channel, integrated charge pump for full N-channel drive, current sense ratio with high accuracy, and programmable restart behavior after fault clearing. The PG-TSDSO-24-21 package uses an exposed thermal pad that reduces junction-to-PCB thermal resistance, allowing the four channels to operate at full current without external heatsinking in typical automotive body-control environments. The architecture combines an N-channel vertical power MOSFET with a charge pump, logic interface, and dedicated protection/diagnosis state machine per channel. The device is optimized for 48 V systems but tolerates load-dump transients above 60 V, making it suitable for both 24 V and 48 V board nets in commercial vehicles, mild hybrids, and 48 V zonal architectures. Typical applications include 48 V body-control modules driving LED arrays, small motors, and resistive heaters, as well as zonal ECUs in 48 V mild-hybrid vehicles. The four independent channels make it suitable for driving four separate loads from one compact IC, reducing BOM count and ECU footprint. When designing with the BTH62004ESAXUMA1, ensure the exposed pad is soldered to a sufficient copper pour to keep junction temperature within the -40 Ā°C to +150 Ā°C operating range. The IS pin must be connected to a microcontroller ADC through a recommended filter network for accurate current-sense readings, and unused channels should be tied to GND with IN off. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the standalone manufacturer datasheet.
BTS118DATMA1 - 42V 2.4A Smart Low-Side Switch | Infineon
The Infineon BTS118DATMA1 is a 1-channel smart low-side power switch built on Smart SIPMOS vertical N-channel MOSFET technology, delivering up to 2.4A continuous drain current at up to 42V load supply voltage in a PG-TO252-3-11 (DPAK) surface-mount package. It integrates an N-channel vertical power FET with embedded protection functions including ESD input protection, thermal shutdown with auto-restart, overload protection, short-circuit protection, overvoltage protection (against Vbb transients) and current limitation. A Smart SIPMOS low-side switch is a monolithic power IC that combines a vertical power MOSFET with logic-level gate drive and on-chip protection circuitry, allowing a microcontroller GPIO to directly switch DC loads such as solenoids, lamps, relays and motors without a discrete MOSFET, gate resistor or external freewheeling diode. The BTS118D is the single-channel logic-level variant of the BTS118 family, optimized for 12V and 24V automotive and industrial power distribution rails. Key features include a logic-level CMOS-compatible input, very low standby current, status feedback through the open-drain IN/output pin, and electromagnetic compatibility (EMC) characteristics tuned for automotive environments. The PG-TO252-3-11 (DPAK) package provides a low thermal resistance path that supports the part's continuous load-current rating. Green-product (RoHS-compliant) lead-free plating rounds out the feature set. The vertical SIPMOS process delivers a low typical on-state resistance versus earlier lateral smart switches, reducing conduction losses and improving thermal margin in continuous-duty applications such as LED driver modules and resistive heating elements. The integrated charge pump referenced to Vbb holds the gate enhancement during PWM operation, and the auto-restart thermal shutdown permits the part to resume normal operation after the junction cools, eliminating the need for manual reset logic. Typical applications include automotive body electronics (door modules, seat controllers, mirror heaters), 24V industrial automation loads, programmable logic controller (PLC) digital outputs, solenoid and valve drivers, LED lighting modules, and any 12V/24V resistive or inductive load requiring protection against shorts, overloads and thermal faults. When designing with this device, place the device's tab on a copper pad sized for the expected worst-case dissipation, route the high-current load return directly to the source tab, and add a reverse-battery protection element (such as a smart high-side or schottky diode) at the supply rail because the BTS118D switches the low side of the load. This page synthesizes distributor pricing, parametric comparison, drop-in compatible alternatives and practical PCB layout guidance that go beyond the manufacturer datasheet's typical application section.
BTS134DATMA1 - 42V 3.5A Smart Low-Side Power Switch | Infineon
The Infineon BTS134DATMA1 is an N-channel vertical power FET built on Infineon's Smart SIPMOS technology, configured as a single-channel low-side power switch with a continuous drain current rating of 3.5 A and an operating voltage of 42 V, housed in a PG-TO252-3-11 surface-mount package (DPAK with 2 leads + tab). It belongs to the HITFET family of protected switches designed for 12 V automotive and industrial loads. A low-side power switch (also called a low-side driver or smart switch) is a discrete or integrated MOSFET placed between the load and ground. It is one of the two fundamental topologies used to drive resistive or inductive loads; the complementary topology is the high-side switch (switch between supply and load). Low-side switches are simpler, cheaper, and have a true ground-referenced source, but they require the load to be tied directly to the battery/rail. Smart low-side switches add on-chip protection (overload, short-circuit, overvoltage, thermal shutdown, ESD), eliminating discrete protection circuitry and reducing PCB area. This places the BTS134DATMA1 inside the broader hierarchy: discrete MOSFET -> protected/MOSFET -> power distribution switch -> power management IC -> semiconductor. Key features include logic-level input (compatible with 3.3 V and 5 V microcontrollers), embedded ESD protection on the input pin, thermal shutdown with auto-restart, current limitation, overload protection, short-circuit protection, and overvoltage (load-dump) protection. The PG-TO252-3-11 package exposes the drain tab for direct PCB heatsinking, supporting sustained currents up to 3.5 A without an external heatsink. The Green product designation confirms RoHS compliance. Technically, the BTS134DATMA1 uses a vertical DMOS structure to achieve low on-state resistance (RDS(on)) per unit area, and integrates a charge pump, gate driver, and protection state machine on the same die. Logic-level input thresholds eliminate the need for a gate-driver pre-stage, allowing direct connection to a GPIO. Self-resetting thermal shutdown protects the die at junction temperatures above the shutdown threshold, while current-limit and short-circuit protection safeguard the FET during load faults. Typical applications include 12 V automotive lamp drivers (incandescent, halogen, LED), solenoid and valve drivers, small DC motor drivers, relay replacement, and general-purpose low-side switching in industrial PLCs and home appliances. The device is AEC-Q100 qualified, making it suitable for harsh underhood and body-electronics environments. When designing with this part, keep the load return isolated from the MCU ground only if the load itself can tolerate it; otherwise return the load directly to the battery ground. Add sufficient copper area on the drain tab to keep the junction below the thermal-shutdown threshold during inrush events such as cold-lamp filament turn-on or motor start-up. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
BTS3011TEATMA1 - 11mĪ© Smart Low-Side Switch, 10A, 28V | Infineon
The Infineon BTS3011TEATMA1 is an 11 mĪ© single-channel Smart Low-Side Power Switch housed in a PG-TO252-5 (DPAK) package, providing embedded protective functions and qualified to AEC-Q100 for automotive use. Key specifications include a 10 A continuous load current, a 3 V to 28 V operating voltage range, and a built-in N-channel vertical power MOSFET that delivers low R_DS(on) for high-efficiency switching. The device integrates current limiting, over-temperature shutdown, over-voltage clamp, ESD protection, and a diagnostic status feedback pin. A Smart Low-Side Power Switch is a semiconductor that controls a load by switching the ground return path rather than the supply rail, providing a cost-effective way to drive resistive or inductive loads such as solenoids, valves, lamps, relays, and LED strings. The category sits within Power Distribution Switches > Load Drivers in the broader PMIC taxonomy, and combines a power MOSFET with protection and diagnostic logic into a single IC - eliminating the need for discrete protection circuitry around a bare MOSFET. Low-side switches are favored when the load is referenced to a common chassis ground and when fast demagnetization of inductive loads is required through active freewheeling. Differentiating features include 11 mĪ© typical on-resistance at 25 Ā°C, Ā±8 kV HBM ESD robustness on the output pin, an operating junction temperature range of -40 Ā°C to +150 Ā°C, and a logic-level CMOS-compatible input. The integrated inverse-current protection and ground-loss protection improve fault tolerance on automotive wiring harnesses where shorts to ground or battery are common. The 5-pin DPAK footprint provides a tab for low thermal resistance, enabling continuous 10 A operation without external heatsinking on typical 1 oz copper PCB areas. The device is built on Infineon's proprietary N-channel vertical power MOSFET process, optimized for low on-resistance per unit area in the 30 V class. Internal charge pump and gate driver circuitry ensure full enhancement of the power stage even at low battery voltages down to 3 V during cranking transients. A status flag pin provides open-drain feedback for fault detection by an external microcontroller. Typical applications include automotive body electronics (door lock actuators, mirror heaters), 12 V LED lighting modules, relay and solenoid replacement in HVAC and powertrain ECUs, and industrial 24 V load switching. The AEC-Q100 Grade 1 qualification makes it suitable for under-hood and chassis-mounted modules exposed to wide temperature swings. When designing with this device, ensure that the load's inrush current does not exceed the inrush current limit, and that adequate copper area is provided on the drain tab for thermal dissipation. The input pin must be driven from a microcontroller GPIO capable of sourcing the pull-up current; a series resistor may be required to limit inrush into the logic input. This page synthesizes distributor pricing, drop-in Infineon family alternatives, and practical design notes for automotive low-side switching that complement the manufacturer datasheet.
BTS3028SDLATMA1 - 5A Low-Side Smart Switch | Infineon
The Infineon BTS3028SDLATMA1 is a single-channel, low-side N-channel MOSFET power switch in the PG-TO252-3-11 (DPAK) package, rated for 5 A continuous load current. It integrates the power FET and a complete set of embedded protection functions ā including overtemperature shutdown, overvoltage clamp, ESD protection, and current limitation ā making it a member of Infineon's HITFETā¢ 24V family of automotive-grade smart low-side switches. A low-side switch is a power switch placed between the load and ground, allowing the load to be grounded on one terminal. Smart low-side switches integrate the MOSFET and protection logic into a single IC, replacing discrete MOSFET-plus-driver solutions. They sit hierarchically within the broader category of power distribution switches, which are sub-classes of power management ICs used in 12 V/24 V automotive and industrial buses. Key specifications include an operating voltage range of 2 V to 10 V (load supply), a typical on-state resistance of 28 mĪ© at 25 Ā°C, continuous drain current up to 5 A, and a junction temperature range of -40 Ā°C to +150 Ā°C. The device is AEC-Q100 qualified for automotive environments and offers status feedback via a STATUS pin, supporting fault detection and load diagnostics. Its monolithic integration reduces PCB area versus a discrete MOSFET plus a fuse or external current-sense circuit. Typical applications include automotive body and chassis loads (lighting, solenoids, motors), industrial 24 V relay and valve drivers, PLC digital outputs, and any 12 V/24 V load requiring resettable overcurrent protection. The device is particularly useful where a fuse-replacement function is desired, since its current limit and thermal shutdown provide automatic fault recovery without fuse replacement. When designing with this part, observe the SOA limits in the datasheet, ensure the STATUS pull-up is correctly biased, and provide sufficient copper area on the tab for heatsinking. Compared with discrete MOSFETs, the integrated protection reduces BOM count, but the on-resistance is higher than the lowest-RDS(on) discrete parts ā a trade-off in favor of protection and diagnostic features. This page synthesizes distributor pricing across six channels, drop-in alternatives in the same DPAK footprint, and practical design notes for both automotive and industrial 24 V buses ā practical context not found in the manufacturer datasheet alone.
BTS3028SDRATMA1 - 5A Smart Low-Side Switch, 28mĪ© | Infineon
The Infineon BTS3028SDRATMA1 is a 5 A single-channel smart low-side N-channel MOSFET power switch in the PG-TO252-3-11 (DPAK) surface-mount package with an on-resistance of 28 mĪ© (RDS(ON), typ.) and built-in protective functions. Housed in a 3-pin (2 leads + tab) DPAK/TO-252 package, this part belongs to Infineon's HITFETā¢ Smart Low-Side family and is qualified for automotive 12 V systems, with a 60 V load-dump rating and operating supply voltage up to 28 V (typical 13.5 V). A smart low-side switch is a power semiconductor IC that integrates a vertical power MOSFET, gate driver, and embedded protection circuitry into a single die. In the broader system taxonomy, the BTS3028SDR sits below discrete N-channel MOSFETs and above simple relay or fuse solutions, providing controlled load switching with diagnostic feedback. Low-side switches are placed between the load and ground (rather than between supply and load), which simplifies gate drive and current sensing. Key embedded features include overtemperature shutdown with auto-restart, overvoltage clamp (including load-dump), ESD protection on the input and output pins, short-circuit detection with current limiting, and an open-drain status flag output. The device also integrates reverse-battery protection and a ground-loss safe shutdown sequence, addressing the harsh electrical environment typical of automotive wiring harnesses. The BTS3028SDR uses a monolithic vertical N-channel MOSFET with charge-pump gate drive, giving it a low typical RDS(ON) of 28 mĪ© at room temperature and very low standby current. Logic-level IN input enables direct 3.3 V or 5 V microcontroller GPIO control without additional driver stages. The integrated protections shorten the bill of materials compared to discrete FET + TVS + fuse solutions and improve reliability under fault conditions. Typical applications include automotive body electronics (lighting, seat control, door locks, mirror heaters), 24V industrial load driving, relay and solenoid replacement, and any 12V/24V load-switching function where diagnostics and protection are required. The part is qualified to AEC-Q100 and is well-suited for driving resistive, inductive, and capacitive loads including LED strings, DC motors, and heaters. When designing with this device, derate RDS(ON) for the expected operating temperature (it roughly doubles from 25 Ā°C to 150 Ā°C) and ensure the PCB footprint dissipates heat adequately - the DPAK tab should be soldered to a copper area of at least 1 cmĀ². The status output requires a pull-up resistor; the IN pin should be debounced if connected to mechanical switches or wired harnesses. This page synthesizes distributor pricing, drop-in alternative listings, and practical design notes not found in the manufacturer datasheet.
BTS3035TFATMA1 - 5A 12V Low-Side Switch | Infineon HITFET
The Infineon BTS3035TFATMA1 is a single-channel, N-channel low-side power switch rated at 5A continuous drain current with 30 mOhm typical on-resistance, housed in a 3-pin PG-TO252-3-313 (DPAK) surface-mount package. It belongs to the Infineon HITFET family of protected low-side switches, designed for 12V automotive and industrial load driving with integrated ESD protection, thermal shutdown, overcurrent limitation, and short-circuit ruggedness. A low-side switch is a type of power semiconductor that controls a load by switching the connection between the load and ground, as opposed to a high-side switch that switches the supply rail. Low-side switches sit in the power management hierarchy beneath high-side drivers, MOSFETs, and solid-state relays, and are commonly used to drive resistive or inductive loads such as lamps, solenoids, valves, and small motors where the return path can be safely switched. The BTS3035TF uses an N-channel MOSFET as the pass element, providing the lowest possible RDS(on) per unit silicon area compared to P-channel equivalents in the same package. Key features of the BTS3035TF include a 40V load-dump tolerant drain-source voltage, 5A continuous / pulsed current capability, integrated reverse battery protection, status feedback, and a logic-level CMOS-compatible input that interfaces directly with 3.3V or 5V microcontrollers. The device operates across -40C to +150C junction temperature, suiting underhood automotive modules and harsh-environment industrial applications. The BTS3035TF is part of the HITFET +12V family, which uses a vertical N-channel DMOS process and integrates fault detection (over-temperature, over-current, short to ground/battery) into a single die. Compared to discrete MOSFET solutions, the integrated protections eliminate the need for external sense resistors, gate drivers, and discrete TVS diodes, reducing PCB area and improving reliability. The TO252 package provides a low thermal resistance path via the drain tab, allowing sustained 5A switching without external heatsinking in typical PCB layouts. Typical applications include automotive body electronics (interior lighting, seat controls, door modules), industrial PLC outputs, HVAC actuators, 24V/12V relay replacement, and general-purpose low-side load switching where fault diagnostics and protection are required by the system specification. When designing with this part, ensure the input pin is pulled to a defined logic level during MCU reset to avoid floating-gate activation. The status flag output requires a pull-up resistor; verify the host MCU's input voltage tolerance against the open-drain status output voltage level. Adequate copper area on the drain tab is essential for thermal performance. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes beyond what the manufacturer datasheet alone provides.
BTS3046SDRATMA1 - 3.6A Smart Low-Side Switch HITFET | Infineon
The Infineon BTS3046SDRATMA1 is a single-channel, low-side N-channel MOSFET power switch from Infineon's HITFET (High-Integrated Temperature-protected FET) family, rated for 3.6A continuous load current with a typical on-state resistance of 95 mOhm (0.095 ohm) in a PG-TO252-3-11 (DPAK) surface-mount package. It is monolithically integrated with a vertical power FET and embedded protective functions including over-temperature shutdown, short-circuit protection, over-current limiting, over-voltage clamping (at Vbb), and ESD protection, making it a robust drop-in replacement for discrete low-side switch implementations. A smart low-side power switch is an intelligent semiconductor that sits between a microcontroller GPIO and a grounded load (relay coil, solenoid, LED string, lamp, or small motor), providing both load-driving capability and on-die protection that would otherwise require multiple discrete components. Low-side switches are particularly common in 12V automotive body electronics, where the load is referenced to battery positive and the switch only needs to sink current to ground; this simplifies wiring, reduces wiring-harness cost, and enables PWM-based dimming or speed control. As part of the broader power management IC hierarchy, the BTS3046SDRATMA1 sits below high-side switches and H-bridges in functionality but excels in cost-sensitive single-channel applications. Key features include an operating voltage range of approximately 4.5 V to 42 V, 3.6A continuous drain current capability, very low standby current, CMOS-compatible input with internal pull-down, status feedback, and integrated over-voltage clamp. The N-channel vertical FET architecture delivers low Rds(on) per unit area while keeping thermal resistance manageable in the DPAK package, allowing sustained 3.6A output without an external heatsink on properly designed 1-2 oz copper pours. Typical applications include automotive body control modules, junction-box relays and lamp drivers, ECU-controlled resistive and inductive loads, HVAC blower and fan control, industrial 24V solenoid and valve drivers, and any 12V/24V ground-referenced load requiring embedded protection. The AEC-Q100 automotive qualification (where applicable to the part variant) supports deployment in passenger compartment and under-hood environments. Designers should pay attention to inductive-load flyback handling: although the device integrates over-voltage clamping, persistent inductive kickback above the clamp rating will degrade reliability. Add a TVS or free-wheeling diode for highly inductive loads such as solenoids and motors. The status pin requires a pull-up resistor to logic supply for proper fault signaling in the application firmware. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
BTS3050EJXUMA1 - 50mĪ© 4A Smart Low-Side Switch | Infineon
The Infineon BTS3050EJXUMA1 is a 50 mĪ© single-channel smart low-side power switch in a PG-TDSO-8-31 (TDSO8-31) surface-mount package, rated for 4 A continuous load current and 12 V automotive supply rails. Built around an N-channel vertical power MOSFET, it integrates load-current limiting, ESD protection on the input pin, and an auto-restart thermal shutdown into a single die, providing a protected interface between a microcontroller GPIO and a resistive or inductive ground-referenced load. A Smart Low-Side Switch (SLS) is a type of power distribution switch ā itself a category of power management IC ā that switches the negative (ground) side of a load rather than the positive supply. In the power management taxonomy, this places the BTS3050EJXUMA1 as: power distribution switch -> load switch -> smart low-side switch -> power semiconductor. SLS devices are widely used in automotive body electronics where high-side driving is impractical or where ground-side PWM dimming (for example, LED tail lamps) is the desired topology. Key features include a typical on-state resistance (RDS(on)) of 50 mĪ© at 25 Ā°C, integrated over-temperature protection with auto-restart behavior, ESD protection on the IN (Source / Ground) pin, and current-limit foldback under overload. The PG-TDSO-8-31 package provides an exposed tab for thermal dissipation, and the device is qualified for 12 V automotive board-net environments with transient tolerance to typical load-dump events when paired with external TVS protection. The BTS3050EJXUMA1 is built on Infineon's proven HITFETā¢ +12V process family, combining a vertical N-channel DMOS output stage with CMOS control logic on the same die. This monolithic integration minimizes propagation delay from IN to OUT and eliminates the need for an external gate drive, allowing the part to be driven directly from a 3.3 V or 5 V microcontroller output. The smart-protection block monitors junction temperature via an on-die sensor and latches/restarts the output autonomously, freeing the host MCU from fault-handling routines. Typical applications include automotive LED lighting modules (rear lamps, interior illumination), relay and solenoid replacement, small DC motor drivers for HVAC flaps and door mirrors, and general 12 V resistive load switching in body control modules (BCMs). The device is particularly suited to PWM-dimmed lighting because its low-side topology and fast switching allow direct ground-referenced modulation without bootstrap capacitors. When designing with the BTS3050EJXUMA1, observe the maximum RDS(on) derating at elevated junction temperature and ensure the exposed pad is soldered to a sufficient copper pour to keep Tj below 150 Ā°C under worst-case ambient and load conditions. Decouple the load supply with a local ceramic capacitor close to the device's Vbb pin to absorb load-dump and reverse-battery transients.
BTS3050TFATMA1 - 4A Smart Low-Side Power Switch HITFET | Infineon
The Infineon BTS3050TFATMA1 is a 4 A N-channel smart low-side power switch in the HITFET family, housed in a PG-TO252-3-313 (TO-252-3 / DPAK) surface-mount package. It integrates a single N-channel MOSFET with 44 mOhm typical on-resistance, logic-level input, and comprehensive protection including over-current, over-temperature, over-voltage, and ESD protection. The part is AEC-Q100 qualified for automotive applications and supports load voltages up to 5.5 V with continuous drain current up to 4 A. A smart low-side power switch (also called an intelligent FET or HITFET) is a discrete-or-IC power switch that combines a MOSFET with on-die protection, status feedback, and a logic-level gate driver. Low-side switches sit between the load and ground, switching the return path, and are widely used in automotive body electronics, industrial control, and any application needing protected switching of resistive, inductive, or lamp loads. Compared to a discrete MOSFET, the integrated switch eliminates gate drive complexity and provides fault diagnostics that would otherwise require external comparators and current-sense resistors. Key features of the BTS3050TFATMA1 include 44 mOhm RDS(on) at 25 C, 4 A continuous drain current, logic-level CMOS-compatible input, status flag output, and built-in clamping for inductive loads. The integrated protective functions include current limitation, thermal shutdown with auto-restart, over-voltage protection on Vbb, and reverse battery protection on Vbb. The HITFET+ technology from Infineon combines a vertical MOSFET with smart analog protection on the same die, reducing PCB area and BOM count versus discrete solutions. The BTS3050TFATMA1 uses Infineon's vertical DMOS process optimized for 12 V automotive load switching. Its logic-level input thresholds (CMOS-compatible) allow direct connection to 3.3 V or 5 V microcontrollers without level translation. The status feedback pin reports fault conditions to the host MCU, enabling centralized diagnostics over CAN or LIN in body control modules. Typical applications include automotive body electronics (door lock motors, seat adjustment, mirror folding), LED lighting modules (interior/exterior lamps, dimming control), relay and solenoid replacement, industrial PLC outputs, and any 12 V or 24 V load switching that benefits from integrated protection and diagnostics. When designing with the BTS3050TFATMA1, place a reverse-battery protection diode on Vbb or use a series resistor to limit inrush. Decoupling capacitors of at least 100 nF must be placed close to the Vbb pin to absorb load-dump transients. The thermal pad must be soldered to a sufficient copper pour to keep junction temperature below the 150 C shutdown threshold. This page synthesizes distributor pricing, parametric drop-in alternatives, and practical PCB thermal notes not found in the manufacturer datasheet.
BTS3060TFATMA1 - 3A 42V Smart Low-Side Switch | Infineon
The Infineon BTS3060TFATMA1 is a 50 mĪ© single-channel Smart Low-Side Power Switch housed in a PG-TO252-3 (DPAK) surface-mount package, designed and qualified for 12V automotive applications. The integrated N-channel vertical power MOSFET delivers up to 3A continuous load current, and the device is monolithically integrated with embedded protective functions that simplify the design of robust ECU outputs. The -TFATMA1 suffix indicates Tape & Reel packaging for high-volume SMT assembly. A low-side power switch is a semiconductor that connects a load to ground when activated; by placing the switch between the load and ground rather than between supply and load, the device simplifies wiring, eases fault detection, and keeps load-side wiring at the battery voltage when off. The BTS3060TF belongs to Infineon's HITFET family, which extends classic low-side switches with monolithic intelligence such as overcurrent, overtemperature, and overvoltage protection, plus diagnostic feedback. Key features include a 42V maximum load supply rating, 50 mĪ© typical on-resistance at 25Ā°C, status feedback output, and AEC-Q100 automotive qualification. The logic-level gate input is compatible with 3.3V and 5V microcontrollers, and the integrated charge pump drives the N-channel MOSFET efficiently even at low supply voltages. The PG-TO252-3 (DPAK) package offers a low thermal resistance that supports sustained 3A operation with proper PCB copper area. Typical applications include automotive body electronics (door lock actuators, seat heaters, mirror adjusters), resistive and inductive load driving (relays, solenoids, lamps), 24V truck and 12V passenger car subsystems, and industrial low-side switching where diagnostic feedback and protection are required. The monolithically integrated protection reduces the external component count, which is critical for ECU designs that must meet tight cost and reliability targets. When designing with this device, ensure the PCB copper area under the DPAK tab is sized to keep the junction temperature within the -40Ā°C to +150Ā°C operating range under worst-case load. The status pin requires a pull-up resistor and provides diagnostic feedback for open-load, overtemperature, and short-circuit events. Avoid exceeding 42V on the drain pin even during load-dump transients above the rated voltage. This page synthesizes distributor pricing, drop-in alternatives, and practical PCB design notes not consolidated on the manufacturer product page.
BTS3104SDRATMA1 - 2A 60V Low-Side HITFET Switch | Infineon
The Infineon BTS3104SDRATMA1 is a single-channel, N-channel, low-side MOSFET power switch in a PG-TO252-3-11 (DPAK) surface-mount package, rated for 2A continuous load current and 60V drain-to-source breakdown. As part of Infineon's HITFET (High-Integrated Temperature-protected FET) SMART Low-Side Power Switch family, the device monolithically integrates a vertical N-channel power FET with embedded protection functions including overtemperature, overcurrent, short-circuit, overvoltage (at the output / load-dump), and ESD protection. A low-side power switch is a discrete or integrated semiconductor that controls a load by interrupting the return (ground) path on the low side of the supply rail, as opposed to a high-side switch which interrupts the positive supply. Low-side switches sit within the broader hierarchy of power management ICs and discrete MOSFETs, offering the simplest, lowest-cost way to drive resistive or inductive loads such as lamps, relays, solenoids, and small DC motors in automotive and industrial systems. The HITFET family extends this concept by co-integrating diagnostic and self-protection features so designers do not need to add discrete fuses, sense resistors, or thermal cutoffs. Key specifications of the BTS3104SDRATMA1 include a 60V drain-to-source voltage rating (V_DS), 2A continuous drain current, very low standby current, and CMOS-compatible logic-level input on the IN pin. The device is qualified to AEC-Q100 for automotive use and is offered in a halogen-free, RoHS-compliant PG-TO252-3-11 package suitable for automated SMT assembly. Architecturally, the BTS3104SDR uses a vertical N-channel DMOS output structure that delivers low R_DS(on) per unit area and is paired on-chip with a charge pump, gate driver, current-sense block, and thermal shutdown circuit. Compared with a discrete N-MOSFET plus fuse design, the integrated approach reduces PCB area, eliminates external protection components, and provides latched diagnostic feedback to the microcontroller. The internal charge pump holds the gate high even at low V_IN, ensuring predictable R_DS(on) across cold-crank and load-dump transients typical of 12V automotive boards. Typical applications include automotive body electronics (e.g., driving lamps, LED modules, and small motors), industrial 24V PLC outputs, relay and solenoid replacement, and any system requiring a protected low-side driver with diagnostic feedback. The 60V V_DS rating also supports 24V industrial buses and trucks (24V nominal) with sufficient margin against load-dump. When designing with this part, place a low-ESR ceramic bypass capacitor close to the V_IN pin and verify that the steady-state power dissipation (I_load^2 x R_DS(on)) stays within the PG-TO252-3-11 thermal envelope (approximately 1.5W on 1oz copper, 2oz copper improves this). For inductive loads, add a freewheeling diode across the load to clamp turn-off transients even though the FET has internal avalanche ruggedness. This page synthesizes distributor pricing from DigiKey and Mouser, drop-in same-package alternatives, and practical design notes for the BTS3104SDRATMA1 that are not aggregated in a single manufacturer datasheet view.
BTS3110NHUMA1 - 42V 1.4A Smart Low-Side Switch | Infineon
The Infineon BTS3110NHUMA1 is a 42 V N-channel smart low-side power switch in a PG-SOT223-4 (SOT-223-4) surface-mount package, providing 1.4 A continuous drain current and an on-state resistance of 200 mOhm typical. It is a member of Infineon's Classic HITFET family designed as a microcontroller-compatible power switch for 12 V DC automotive and industrial applications, replacing electromechanical relays and discrete switching circuitry. A smart low-side switch is an integrated power semiconductor that combines an N-channel MOSFET output stage with on-chip protection and diagnostic logic in a single package. Functionally it sits below the broader power MOSFET category and above the simple discrete switch level in the power management hierarchy, allowing logic-level inputs from a microcontroller to switch grounded loads (lamps, solenoids, relays, motors) with full ESD, thermal, short-circuit, and over-load protection handled internally. Key features include 42 V maximum load-dump-rated drain-to-source voltage, 200 mOhm typical on-resistance at 25 C, integrated over-temperature shutdown with auto-restart, over-load current limiting, ESD protection on the input pin, and open-drain status flag output. The logic-level input is TTL/CMOS compatible, allowing direct connection to 3.3 V or 5 V microcontroller GPIO without driver circuitry. The device is built on Infineon's planar N-channel DMOS technology with a vertical power MOSFET output stage, monolithic gate driver, and on-die protection circuitry including active current limiting and thermal shutdown that latches off at excessive junction temperature. The integrated charge pump provides a stable gate drive across the full 12 V battery operating range including cold-crank transients down to 6 V. Typical applications include 12 V automotive body electronics (lamp drivers, LED drivers, solenoid drivers, small motor drivers), industrial 24 V PLC switching, and resistive or inductive loads up to 1.4 A continuous. It is especially well suited to replace automotive relays where PCB real estate, switching reliability, and diagnostic feedback are required. When designing with this part, ensure that inductive loads include an external free-wheeling diode or that the part is used within its avalanche-rated energy limits. The PG-SOT223-4 package requires a copper land pattern sized to the drain tab for adequate heatsinking at sustained high-current operation. This page synthesizes distributor pricing, drop-in cross-brand and same-family alternatives, application guidance, and design notes not found in the manufacturer datasheet alone, providing engineering value beyond a simple parametric listing.
BTS3118NHUMA1 - 2.17A Smart Low-Side Switch | Infineon
The Infineon BTS3118NHUMA1 is a 2.17 A N-channel vertical power FET in Smart SIPMOS technology, housed in a 4-pin PG-SOT223-4 surface-mount package, designed as a logic-level low-side power switch for 12 V DC applications. It combines an N-channel MOSFET with an integrated gate-driving unit and embedded protection functions, including ESD input protection, thermal shutdown with latch, overload protection, short-circuit protection, overvoltage protection, and analog current limitation. A low-side switch is a power distribution topology in which the MOSFET sits between the load and ground, switching the return path rather than the high-side supply. Low-side switches sit in the broader power management hierarchy: load switch -> power distribution switch -> smart switch with diagnostics -> power management IC. They are widely used to replace electromechanical relays and discrete MOSFET-plus-driver circuits, providing a micro-controller-compatible interface with built-in protection that a discrete design cannot match. Key features include a logic-level input that interfaces directly with 3.3 V and 5 V micro-controllers, an operating voltage range of 6 V to 18 V nominal (with transient overvoltage protection), a typical on-state resistance (RDS(on)) in the tens of milliohm range at room temperature, and a current limit in the 2 A region. The HITFET family integrates the gate driver, protection logic, and power stage into a single die, simplifying PCB layout and reducing BOM count. The BTS3118NHUMA1 uses a vertical SIPMOS process that places the drain on the package tab (pins 2 and 4 are tied to the tab), allowing the PCB copper pad under the tab to serve as a heatsink for moderate continuous loads. The protection logic includes a thermal latch that disables the output until power is cycled, preventing fault-induced thermal runaway. Typical applications include body controller modules for automotive lighting (interior lights, dashboard illumination, dimming functions), 12 V relay replacement in industrial control panels, and any 12 V resistive, inductive, or capacitive load in switching or linear mode. The SOT-223 footprint is industry-standard for 1 A to 3 A low-side switches. When designing with this part, observe that pins 2 and 4 are internally connected to the drain and to the package tab; PCB copper area under the tab is critical for thermal performance at sustained loads above 1.5 A. A 100 nF ceramic bypass capacitor close to the Vbb pin is recommended to handle inductive kick-back and supply transients. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone.
BTS3125TFATMA1 - 2A N-Channel Smart Power Switch | Infineon
The Infineon BTS3125TFATMA1 is a single-channel, N-channel low-side power switch belonging to Infineon's HITFET+ family of protected smart power switches. It delivers up to 2 A continuous load current at 5 V nominal supply in a surface-mount PG-TO252-3-313 (DPAK equivalent) package with an integrated tab for thermal dissipation. The device integrates a vertical N-channel MOSFET driver with on-resistance of approximately 240 mĪ©, plus built-in protection features including over-current, over-temperature, short-circuit, over-voltage and ESD protection, all packaged in an SC-63 / DPAK form factor. HITFET+ (High Integration Temperature protected FET) is Infineon's category of smart low-side switches; the BTS3125TF family combines a logic-level MOSFET gate driver with comprehensive diagnostic feedback so designers can drive resistive, capacitive or inductive loads without the discrete components traditionally required for protection and status feedback. The BTS3125TFATMA1 specifically operates from a 5 V logic supply rail with input compatibility for 3.3 V and 5 V microcontroller GPIO, replacing electromechanical relays and discrete MOSFET+resistor+diode solutions with a single protected IC. Key specifications include 2 A continuous drain current, 250 mĪ© typical RDS(on), logic-level input, 40 V load-dump transient protection, and a status flag output that signals fault conditions (over-temperature, short-circuit, open load). The integrated thermal shutdown typically engages around 150Ā°C, and the device provides automatic restart after a fault clears. The PG-TO252-3-313 package offers a thermal resistance of approximately 80 Ā°C/W which, combined with the tab, supports continuous 2 A operation without a dedicated external heatsink when properly PCB-mounted. Typical applications include driving 12 V automotive lamps, solenoids, valves, relays, LED arrays, and small motors in body-control modules and industrial actuators. The wide operating range (typically 5 V to 28 V continuous, with 40 V transient) suits both 12 V automotive and 24 V industrial bus architectures. Built-in protection allows direct connection to wiring harnesses without additional protection circuits on the board. When designing with this part, place the exposed tab on a copper pour sized to limit junction temperature rise; at 2 A load and 13.5 V supply, power dissipation reaches roughly 0.96 W, and a 1 cmĀ² copper area is typically adequate for continuous operation in still air. Ensure the input pin has a clean logic-level signal and is not left floating during power-up.
BTS3134NHUMA1 - 42V 3A Smart Low-Side Power Switch | Infineon
The Infineon BTS3134NHUMA1 is a 42 V, 3 A single-channel N-channel smart low-side power switch housed in a 4-pin (3+Tab) PG-SOT223-4 surface-mount package. It integrates a SIPMOS output stage with on-chip protection and a logic-level gate drive, delivering a 1:1 power switch/driver with a 3 A continuous current rating. The device is qualified to AEC-Q100 for automotive environments and ships in Tape & Reel packaging. A smart low-side power switch is a power distribution switch that controls a load (relay, solenoid, lamp, LED string) by pulling the low side to ground through an internal N-channel MOSFET when activated by a logic-level input. It is functionally and architecturally equivalent to a discrete N-channel MOSFET plus gate driver plus protection circuitry, integrated into a single IC. Smart low-side switches sit within the broader hierarchy of power distribution switches, which in turn belong to the power management IC family. Key features include an operating supply range up to 42 V, an R_DS(on) of approximately 50 mĪ© typical, integrated over-current, over-temperature, over-voltage, and ESD protection, plus a status flag output for fault feedback. The 3 A continuous drain current makes it well-suited to automotive body and chassis loads such as lamps, relays, and small motors. The exposed tab of the PG-SOT223-4 package acts as a thermal pad, allowing the part to dissipate the load current without external heatsinking at moderate duty cycles. The BTS3134NHUMA1 uses Infineon's SIPMOS technology - a vertical power MOSFET process optimized for low-voltage, high-current switching with integrated CMOS control logic. This monolithic integration eliminates the need for a discrete gate driver and external protection circuitry, reducing PCB area and improving reliability. The AEC-Q100 qualification ensures the part meets automotive stress-test requirements for temperature, humidity, and vibration. Typical applications include automotive body electronics such as lamp drivers, relay replacement, solenoid and valve control, LED driver circuits, and general 12 V / 24 V automotive load switching. The 42 V maximum rating also provides headroom for 24 V truck and industrial bus systems with load-dump transients. When designing with this device, ensure that the input pin is driven from a logic-level source (3.3 V or 5 V CMOS) and that the exposed tab is soldered to a sufficient copper pour (typically 1 square inch minimum) to keep junction temperature within the -40Ā°C to +150Ā°C operating range under worst-case load. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found on the manufacturer product page alone.
BTS3256DAUMA1 - 7.5A Smart Low-Side Switch | Infineon HITFET
The Infineon BTS3256DAUMA1 is a 7.5 A smart low-side N-channel power switch from the HITFET family, housed in a PG-TO252-5-11 (DPAK-5) surface-mount package. It integrates a vertical N-channel MOSFET with comprehensive on-chip protection including thermal shutdown, overcurrent limiting, overvoltage clamp, and ESD protection. The device is qualified for automotive applications and provides diagnostic feedback through a status flag pin, enabling fault detection in body control modules, solenoid drivers, and LED lighting systems. A smart low-side power switch is an integrated circuit that replaces a discrete MOSFET plus discrete protection circuitry by combining the power transistor, gate driver, current sensing, and protection logic in a single package. It sits in the power distribution hierarchy between a microcontroller's GPIO and a ground-referenced load such as a relay coil, solenoid valve, lamp filament, or heating element. By switching on the low side, the load is grounded to complete the circuit when the FET turns on, allowing the load to operate from a positive supply rail. Smart low-side switches reduce PCB area, improve reliability, and provide built-in diagnostic and protective features that discrete implementations cannot match. Key features of the BTS3256DAUMA1 include a typical on-state resistance of approximately 50 mOhm, a continuous drain current of 7.5 A, and an operating voltage range suited to 12 V automotive systems. The integrated clamp circuit handles inductive load turn-off safely, while the thermal protection shuts the channel down when junction temperature exceeds safe limits. The status output allows the ECU to distinguish between normal operation, short-to-ground, short-to-battery, and open-load conditions, supporting ISO 26262 functional safety requirements. The BTS3256DAUMA1 uses Infineon's proprietary HITFET technology, which combines a low-RDS(on) vertical DMOS output stage with CMOS control logic. This architecture achieves very low quiescent current in standby while delivering high peak current capability for inrush loads such as cold filament lamps or capacitive loads. The 5-pin DPAK package provides an exposed thermal pad for low thermal resistance, allowing sustained high current operation without external heatsinking in typical automotive environments. Typical applications include automotive body electronics, solenoid and valve drivers, LED lighting modules, power distribution switches, HVAC flap motors, and small DC motor control. The device is also widely used in 24 V truck and commercial vehicle systems where its voltage rating provides additional margin. When designing with the BTS3256DAUMA1, place a 100 nF ceramic decoupling capacitor close to the Vbb supply pin and ensure the exposed pad has sufficient copper pour (at least 1 square centimeter) for thermal dissipation. The status pin requires a pull-up resistor and should be monitored by the MCU for fault handling. Always respect the maximum junction temperature of 150 C and derate current accordingly at elevated ambient temperatures. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet, with all figures referenced as of 2026-09-15.
BTS3405GXUMA1 - Dual N-Ch 350mA Low-Side Switch | Infineon
The Infineon BTS3405GXUMA1 is a dual-channel N-channel low-side power switch in a PG-DSO-8 package, delivering 350 mA continuous current per channel (550 mA peak per Mouser listing) with an on-state resistance of 0.9 Ī©. Classified as a HITFET (High-Integration FET) smart low-side switch, it integrates a power MOSFET, gate driver, and protection circuitry into a single 8-pin SOIC footprint. Key features include integrated overcurrent protection, short-circuit protection, over-temperature protection, and over-voltage protection on each channel, making it suitable for harsh automotive and industrial environments. The device operates across -40Ā°C to +150Ā°C junction temperature and supports logic-level input signals for direct microcontroller interface. The BTS3405GXUMA1 belongs to Infineon's HITFET family of low-side switches, which sit within the broader power management IC hierarchy: low-side switch -> smart switch -> power distribution switch -> power management IC. A low-side switch controls load current by switching the ground return path rather than the high-side supply, simplifying gate drive requirements and reducing cost compared to high-side switches. This topology is well-suited for resistive, inductive, and capacitive loads where the load can safely share a common return with the system ground. Typical applications include automotive relay and solenoid replacement, LED driver circuits, small DC motor control, and general-purpose load switching in body electronics modules. The integrated protection features eliminate the need for discrete fuses or PTCs, reducing both BOM count and PCB area while improving system reliability. The PG-DSO-8 package provides a thermally enhanced pad-down footprint for improved power dissipation. When designing with this device, verify that the load's inrush current does not exceed the trip threshold of the overcurrent protection, which typically activates within microseconds. For inductive loads, add a freewheeling diode across the load to clamp the back-EMF and protect the switch from avalanche breakdown. The logic inputs are CMOS-compatible, but ensure that unused input pins are tied to a defined logic level (not left floating) to prevent unwanted turn-on from noise coupling.