1EDN7116GXTMA1 vs 1EDN7136UXTSA1 Comparison

Detailed side-by-side comparison of 1EDN7116GXTMA1 by Infineon and 1EDN7136UXTSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter 1EDN7116GXTMA1 1EDN7136UXTSA1
Brand Infineon Infineon
Category Power MOSFET Drivers Power MOSFET Drivers
Lifecycle Status Active Active
Function Single-channel low-side gate driver for GaN HEMTs and Si MOSFETs High-side / Low-side gate driver IC
Driver Configuration Non-inverting, single low-side —
Number of Drivers 1 —
Peak Source Current 2 A (typ) 1 A
Peak Sink Current 4 A (typ) 2 A
Input Type Truly Differential Input (TDI) Truly Differential Input (TDI)
Supply Voltage (VCC) 4.5 V to 5.5 V —
Switch-Node Blocking Voltage 200 V (max) —
Propagation Delay (Typ) 9 ns [DATA_NEEDED: propagation delay value]
Rise Time (Typ) 3 ns —
Fall Time (Typ) 3 ns —
Quiescent Current (Typ) 0.6 mA —
Miller Clamp Integrated, active —
UVLO Yes (VCC and gate-rail monitored) —
Operating Temperature Range -40 °C to +125 °C -40 C to +150 C
Package PG-VSON-10-4 (3.0 mm × 3.0 mm) TSNP-6 with exposed pad (PG-VSON-1)
Mounting Type Surface Mount Surface Mount
MSL Level MSL3 [DATA_NEEDED: MSL rating]
RoHS Status Compliant Compliant
Target Switch Technology GaN HEMT (CoolGaN) or Si MOSFET —
Driven Device Type — GaN HEMT, N-channel MOSFET
Number of Outputs — 2 (high-side and low-side)
Driver Supply Voltage (Max) — 200 V
Logic Supply Voltage (VCC) — [DATA_NEEDED: VCC range]
Active Miller Clamp — Yes (integrated)
Under-Voltage Lockout (UVLO) — Yes (driver supply and logic input)
Lead-Free — Yes
Halogen Free — Yes (per Infineon product family convention)

Datasheets & Resources

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