1EDN7136UXTSA1 - 200V High-Side TDI Gate Driver IC | Infineon
MPN: 1EDN7136UXTSA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.62 | $1.62 |
| 10 | $1.45 | $14.50 |
| 100 | $1.18 | $118.00 |
| 500 | $0.98 | $490.00 |
| 1,000 | $0.86 | $860.00 |
| 3,000 | $0.74 | $2,220.00 |
Drop-in alternatives for 1EDN7136UXTSA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
1EDN7136GXTMA1
✅ Drop-In✓ In Stock
$1.02 / Unit
View Datasheet →1EDN7126GXTMA1
✅ Drop-In✓ In Stock
$0.29 / Unit
View Datasheet →1EDN7137U
✅ Drop-In📋 Reference alternative (not in catalog)
1EDN7136UXTSA1 Maximum Ratings & Electrical Characteristics
| Function | High-side / Low-side gate driver IC |
| Driven Device Type | GaN HEMT, N-channel MOSFET |
| Number of Outputs | 2 (high-side and low-side) |
| Peak Source Current | 1 A |
| Peak Sink Current | 2 A |
| Driver Supply Voltage (Max) | 200 V |
| Input Type | Truly Differential Input (TDI) |
| Active Miller Clamp | Yes (integrated) |
| Under-Voltage Lockout (UVLO) | Yes (driver supply and logic input) |
| Operating Temperature Range | -40 C to +150 C |
| Package | TSNP-6 with exposed pad (PG-VSON-1) |
| Mounting Type | Surface Mount |
| RoHS Status | Compliant |
| Lead-Free | Yes |
| Halogen-Free | Yes (per Infineon product family convention) |
1EDN7136UXTSA1 Pin Configuration
| Pin 1 | VCC — Logic supply voltage for input buffer |
| Pin 2 | IN+ — Non-inverting differential input |
| Pin 3 | IN- — Inverting differential input / GND reference |
| Pin 4 | GND — Logic ground reference |
| Pin 5 | OUT — Gate driver output to power switch gate |
| Pin 6 | VB — High-side bootstrap supply / driver supply rail |
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this component. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
1EDN7136UXTSA1 is suitable for 6 applications: 48 V Telecom Intermediate Bus Converter, High-Frequency Synchronous Buck Converter, Class-D Audio Amplifier Output Stage, Industrial SMPS and Motor Drive, Solar Inverter DC-DC Stage, Electric Vehicle Auxiliary DC-DC Converter.
48 V Telecom Intermediate Bus Converter
The 1EDN7136UXTSA1's 200 V driver supply rating and 1 A source / 2 A sink output stage make it well suited for 48 V telecom intermediate bus converters that step down to 12 V or 5 V for downstream PoL regulators. In these designs the driver pairs with 100 V GaN HEMTs to push switching frequencies above 1 MHz, shrinking magnetic component size and improving power density. The truly differential input rejects the high common-mode noise typical of 48 V bus systems where ground bounce from the half-bridge switching node couples back into the control loop. Active Miller clamping prevents parasitic turn-on when one switch transitions while the other is held off, eliminating shoot-through losses and improving converter efficiency by typically 1-2%.
Recommended
High-Frequency Synchronous Buck Converter
In high-frequency synchronous buck converters operating above 500 kHz, the 1EDN7136UXTSA1 drives a high-side GaN HEMT and a low-side GaN or Si MOSFET with sub-nanosecond propagation delay matching. The integrated active Miller clamp is critical for GaN parasitics where the Cgd/Cgs ratio can otherwise cause dv/dt-induced turn-on. With 1 A peak source and 2 A peak sink, the driver can switch GaN devices with gate charges in the 5-10 nC range in well under 10 ns, keeping switching losses negligible. The wide driver supply rating also makes it compatible with bootstrap operation up to 100 V input rails, covering the 48 V direct conversion point-of-load use case now common in server and datacom power trees.
Recommended
Class-D Audio Amplifier Output Stage
Class-D audio amplifiers using GaN output stages benefit from the 1EDN7136UXTSA1's high peak output current and fast switching capability. The 200 V driver supply rating comfortably covers 100 V bus rails typical of 200 W+ automotive and pro-audio amplifiers, while the truly differential input rejects PWM feedback noise that would otherwise feed into the modulator loop. Active Miller clamping prevents half-bridge shoot-through that would manifest as audible distortion. With 1 A source / 2 A sink, the driver handles gate charge swings in the 5-15 nC range at 400 kHz to 1 MHz switching frequencies, enabling THD+N figures below 0.005% in well-designed GaN output stages.
Recommended
Industrial SMPS and Motor Drive
In industrial SMPS and low-voltage motor drive applications, the 1EDN7136UXTSA1 drives IGBTs and high-voltage MOSFETs in half-bridge and full-bridge topologies. The 200 V driver supply supports 150 V bus rails with margin for inductive transients, and the -40 C to +150 C operating temperature range matches harsh industrial environments. The active Miller clamp suppresses dV/dt-induced turn-on across motor cables where reflected-wave transients can otherwise exceed 150 V/ns. The exposed-pad TSNP-6 package provides low thermal resistance for continuous high-frequency operation in convection-cooled enclosures, making the driver suitable for fan-less industrial power supplies up to 500 W.
Recommended
Solar Inverter DC-DC Stage
In solar microinverters and DC-DC optimizer stages, the 1EDN7136UXTSA1 drives GaN HEMTs in boost and full-bridge configurations up to 100 V input. The truly differential input rejects the high common-mode noise from the photovoltaic panel's high-impedance source, while the integrated active Miller clamp handles the rapid dV/dt of GaN switching transitions. The compact TSNP-6 package fits the tight PCB layouts of microinverter modules where board area is at a premium. Combined with 200 V driver supply tolerance, the driver tolerates transient over-voltages from grid-side events reflected back through isolation barriers.
Recommended
Electric Vehicle Auxiliary DC-DC Converter
In 48 V mild-hybrid and auxiliary EV DC-DC converters that step down from 48 V to 12 V, the 1EDN7136UXTSA1 drives 100 V GaN HEMTs in a synchronous buck topology. Its 200 V driver supply rating handles inductive transients from automotive load-dump events, while the truly differential input rejects the high common-mode noise of automotive power nets. The active Miller clamp is critical when switching GaN in the presence of long cable harnesses where reflected voltages can exceed 100 V/ns. AEC-Q100 qualified variants of the 1EDN71x6U family are available for automotive designs, though this specific -UX suffix part is commercial grade.
Recommended
Recommended Products Summary
Engineering reference data for 1EDN7136UXTSA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | 1EDN7136GXTMA1 | 1EDN7126GXTMA1 | 1EDN7137U |
|---|---|---|---|---|
| Package | TSNP-6 with exposed pad (PG-VSON-1) | TSNP-6 with exposed pad - same | TSNP-6 with exposed pad - same | TSNP-6 with exposed pad - same |
| Brand | Infineon | Infineon | Infineon | Infineon |
| Driver Supply Voltage (Max) | 200 V | 200 V | Lower voltage class | 200 V |
| Peak Source Current | 1 A | 1 A | 1 A | 1 A |
| Peak Sink Current | 2 A | 2 A | 2 A | 2 A |
| Input Type | Truly Differential Input (TDI) | Truly Differential Input | Truly Differential Input | Truly Differential Input |
| Active Miller Clamp | Yes | Yes | Yes | Yes |
| Operating Temperature | -40 C to +150 C | -40 C to +150 C | -40 C to +150 C | -40 C to +150 C |
| Driven Device Type | GaN HEMT, N-channel MOSFET | GaN HEMT, N-channel MOSFET | GaN HEMT, N-channel MOSFET | GaN HEMT, N-channel MOSFET |
| Unit Price (1 pc, USD) | 1.62 | Similar pricing tier | Lower (smaller voltage class) | Similar pricing tier |
Key Differentiators
- Truly differential input architecture with 200 V supply rating (vs IR2104SPBF)
- Integrated active Miller clamp (vs IR2183SPBF)
- Same-family pin-compatible drop-in option in different reel code (vs 1EDN7136GXTMA1)
Design Notes
Minimize the high-side switching loop area by placing the bootstrap diode and capacitor (typically 100 nF ceramic + optional 1 uF bulk) as close as possible to the VB and OUT pins of the 1EDN7136UXTSA1. The high-side loop comprises the bootstrap cap, the driver's VB pin, the high-side GaN drain-source, and the low-side GaN source. Estimated: a 1 cm^2 loop at 1 MHz switching with 100 V swing can produce 10-20 nH of stray inductance, causing 10-20 V ringing that may exceed GaN's VDS rating if not damped. Use a snubber or optimize layout to <0.5 cm^2.
Do not exceed the 200 V absolute maximum driver supply rating on the VB pin. When driving 100 V GaN HEMTs in half-bridge, the VB pin swings with the switching node plus bootstrap capacitor voltage, so under transient conditions the total can briefly exceed 150 V. Verify that bootstrap capacitor and diode ratings plus any ringing overshoot stay below 200 V. Also confirm the VCC logic supply has adequate decoupling (100 nF + 10 uF bulk) placed within 5 mm of the VCC pin to prevent UVLO mis-triggering during switching transients.
Estimated: at 1 MHz continuous switching with 1 A peak source / 2 A peak sink into a 5 nC GaN gate, the 1EDN7136UXTSA1 dissipates approximately 5 mW of gate-drive loss per switch, or 10 mW total for a half-bridge. The exposed pad of the TSNP-6 package is the primary thermal path; connect it to a copper pour of at least 50 mm^2 on the top layer with multiple thermal vias to the inner ground plane. This keeps junction temperature rise below 5 C in typical 25 C ambient conditions, well within the 150 C maximum rating.
Compliance Information
RoHS and REACH compliant per Infineon product family datasheet. Commercial grade - not AEC-Q100 qualified. AEC-Q100 qualified variants exist in the 1EDN71x6U family for automotive designs. Halogen-free per Infineon product family convention.
