1EDN7116GXTMA1 vs 1EDN7136UXTSA1 비교
다음의 상세 나란히 비교: 1EDN7116GXTMA1 제조: Infineon 및 1EDN7136UXTSA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | 1EDN7116GXTMA1 | 1EDN7136UXTSA1 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | Power MOSFET Drivers | Power MOSFET Drivers |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.84 | $0.74 |
| 기능 | Single-channel low-side gate driver for GaN HEMTs and Si MOSFETs | High-side / Low-side gate driver IC |
| Driver Configuration | Non-inverting, single low-side | — |
| Number of Drivers | 1 | — |
| Peak Source Current | 2 A (typ) | 1 A |
| Peak Sink Current | 4 A (typ) | 2 A |
| Input Type | Truly Differential Input (TDI) | Truly Differential Input (TDI) |
| Supply Voltage (VCC) | 4.5 V to 5.5 V | — |
| Switch-Node Blocking Voltage | 200 V (max) | — |
| Propagation Delay (Typ) | 9 ns | [DATA_NEEDED: propagation delay value] |
| Rise Time (Typ) | 3 ns | — |
| Fall Time (Typ) | 3 ns | — |
| Quiescent Current (Typ) | 0.6 mA | — |
| Miller Clamp | Integrated, active | — |
| UVLO | Yes (VCC and gate-rail monitored) | — |
| 동작 온도 범위 | -40 °C to +125 °C | -40 C to +150 C |
| 패키지 | PG-VSON-10-4 (3.0 mm × 3.0 mm) | TSNP-6 with exposed pad (PG-VSON-1) |
| 실장 유형 | Surface Mount | Surface Mount |
| MSL 레벨 | MSL3 | [DATA_NEEDED: MSL rating] |
| RoHS 상태 | Compliant | Compliant |
| Target Switch Technology | GaN HEMT (CoolGaN) or Si MOSFET | — |
| Driven Device Type | — | GaN HEMT, N-channel MOSFET |
| 출력 수 | — | 2 (high-side and low-side) |
| Driver Supply Voltage (Max) | — | 200 V |
| Logic Supply Voltage (VCC) | — | [DATA_NEEDED: VCC range] |
| Active Miller Clamp | — | Yes (integrated) |
| Under-Voltage Lockout (UVLO) | — | Yes (driver supply and logic input) |
| Lead-Free | — | Yes |
| 할로겐 프리 | — | Yes (per Infineon product family convention) |