1EDN7146UXTSA1 vs 2EDN7434RXTMA1 Comparison

Detailed side-by-side comparison of 1EDN7146UXTSA1 by Infineon and 2EDN7434RXTMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter 1EDN7146UXTSA1 2EDN7434RXTMA1
Brand Infineon Infineon
Category Power MOSFET Drivers Power MOSFET Drivers
Lifecycle Status Active Active
Driver Type Single-channel high-side TDI gate driver —
Maximum Blocking Voltage 200 V —
Input Configuration Truly differential (TDI) —
Output Current (Source / Sink) 1.5 A / 2.5 A —
Propagation Delay [DATA_NEEDED: typical propagation delay ns] —
Rise Time [DATA_NEEDED: typical rise time ns] —
Fall Time [DATA_NEEDED: typical fall time ns] —
Supply Voltage (VCC) [DATA_NEEDED: VCC range V] —
Operating Temperature Range -40C to +125C [DATA_NEEDED: operating temperature]
Package PG-VSON-1 (6-pin with exposed pad) PG-TSSOP-8 (3.0 x 3.0 mm)
Mounting Type Surface Mount Surface Mount
Target Transistor GaN SG HEMT or power MOSFET —
MSL Level [DATA_NEEDED: MSL rating] [DATA_NEEDED: MSL rating]
RoHS Status Compliant Compliant
Topology Support Half-bridge, low-side, high-side —
Manufacturer — Infineon Technologies
Part Family — EiceDRIVER 2EDN
Driver Configuration — Dual-channel low-side
Number of Drivers — 2
Peak Output Current — 5 A (source/sink)
Rated Output Current — 4 A
Output Resistance (Low) — [DATA_NEEDED: output resistance Ron low]
Output Resistance (High) — [DATA_NEEDED: output resistance Ron high]
Propagation Delay (Typ.) — 19 ns
Input Logic Compatibility — LV-TTL, non-inverting
Absolute Max Input Voltage — -12 V to +22 V
Supply Voltage Range — [DATA_NEEDED: VDD range]
Active Output Voltage Clamping — Yes

Datasheets & Resources

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