2EDN7434RXTMA1 - 4A Dual Low-Side Gate Driver | Infineon
MPN: 2EDN7434RXTMA1 β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $0.67 | $0.67 |
| 10 | $0.6 | $6.00 |
| 100 | $0.52 | $52.00 |
| 500 | $0.45 | $225.00 |
| 1,000 | $0.4 | $400.00 |
| 3,000 | $0.34 | $1,020.00 |
2EDN7434RXTMA1 Overview
A low-side gate driver is a specialized power-management IC that sits between a low-power control signal (from a microcontroller, DSP, or PWM controller) and the gate of a low-side power switch. Within the broader semiconductor taxonomy, gate drivers belong to the power management IC category, sitting alongside voltage regulators, supervisors, and motor drivers. They serve as a critical buffer that translates low-current logic signals into the high peak currents needed to rapidly charge and discharge the large input capacitance of power MOSFETs, IGBTs, and WBG transistors. Without a dedicated gate driver, switching speeds would be limited by the controller's weak output stage, leading to excessive heat dissipation and poor efficiency.
The 2EDN7434RXTMA1 features tight timing specifications with typical propagation delays of 19 ns, matched channel-to-channel delays for balanced switching, and integrated active output voltage clamping to protect downstream devices from over-voltage spikes. Independent dual outputs allow flexible half-bridge, synchronous-rectifier, and dual-MOSFET topologies, while the small PG-TSSOP-8 footprint (3.0 x 3.0 mm) saves board area in compact designs. The device operates from a wide supply range and is characterized for industrial temperature grades, suiting it for high-density power designs.
Typical applications include switch-mode power supplies (SMPS), DC-DC converter power stages, synchronous rectifier drivers, motor-control half-bridges, and Class-D audio amplifiers. The driver is also well-suited for driving GaN and SiC transistors where fast edge rates are critical to minimizing switching loss. Its high peak current capability and matched channels also make it appropriate for digital-point-of-load (POL) converters and telecom infrastructure.
When designing with this driver, place the bootstrap supply capacitor (if used) and bypass capacitors as close as possible to the device pins to minimize parasitic inductance. The low output resistance helps contain EMI by producing controlled dV/dt edges; however, careful PCB layout is still required to avoid unwanted ringing on the gate traces. This page consolidates pricing, drop-in alternatives, and application guidance drawn from the manufacturer datasheet and distributor data, offering a practical reference not duplicated on standard distributor listings.
Drop-in alternatives for 2EDN7434RXTMA1 β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with 2EDN7434RXTMA1 (same form factor and footprint) β differing in Package, Input Logic, Operating Temperature, Driver Configuration, Number of Channels.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
2EDN7434RXUMA1
β Drop-Inπ Reference alternative (not in catalog)
2EDN7434R
β Drop-Inπ Reference alternative (not in catalog)
2EDN7524GXTMA1
β Drop-Inβ In Stock
$0.82 / Unit
View Datasheet β1EDN7136UXTSA1
β Drop-Inβ In Stock
$0.74 / Unit
View Datasheet β1EDN7136GXTMA1
β Drop-Inβ In Stock
$1.02 / Unit
View Datasheet β2EDN7434RXTMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Part Family | EiceDRIVER 2EDN |
| Driver Configuration | Dual-channel low-side |
| Number of Drivers | 2 |
| Peak Output Current | 5 A (source/sink) |
| Rated Output Current | 4 A |
| Propagation Delay (Typ.) | 19 ns |
| Input Logic Compatibility | LV-TTL, non-inverting |
| Absolute Max Input Voltage | -12 V to +22 V |
| Package | PG-TSSOP-8 (3.0 x 3.0 mm) |
| Mounting Type | Surface Mount |
| RoHS Status | Compliant |
| Active Output Voltage Clamping | Yes |
2EDN7434RXTMA1 Pin Configuration
| Pin 1 | IN1 β Logic input for channel 1 (non-inverting, LV-TTL) |
| Pin 2 | GND β Ground reference for logic and output stages |
| Pin 3 | IN2 β Logic input for channel 2 (non-inverting, LV-TTL) |
| Pin 4 | OUT2 β Gate driver output for channel 2 |
| Pin 5 | VDD β Driver supply voltage |
| Pin 6 | OUT1 β Gate driver output for channel 1 |
| Pin 7 | NC β Not connected (per datasheet) |
| Pin 8 | EP β Exposed thermal pad; connect to GND for thermal dissipation |
Power Derating & Thermal Characteristics
No manufacturer-published SOA (Safe Operating Area) curve is available for 2EDN7434RXTMA1. Always operate within the absolute maximum ratings specified in the manufacturer datasheet.
Typical Applications
2EDN7434RXTMA1 is suitable for 6 applications: Switch-Mode Power Supplies (SMPS), DC-DC Converter Power Stages, Motor Control Half-Bridges, Class-D Audio Amplifiers, GaN and SiC Transistor Drivers, Synchronous Rectifier Drivers.
Switch-Mode Power Supplies (SMPS)
The 2EDN7434RXTMA1's 5 A peak source/sink current and 19 ns propagation delay make it an excellent driver for synchronous-rectifier MOSFETs in isolated and non-isolated SMPS designs. Placed between the PWM controller and the synchronous FET gates, it delivers fast edge rates that minimize switching loss in high-frequency converters. Unlike integrated FET modules that lock designers into specific topologies, this driver supports flexible half-bridge, full-bridge, and push-pull configurations. The PG-TSSOP-8 footprint saves board area in compact adapter and open-frame supply designs where two channels are needed for synchronous rectification.
Recommended
DC-DC Converter Power Stages
In non-isolated buck, boost, and buck-boost DC-DC converter power stages, the 2EDN7434RXTMA1 drives the low-side synchronous FET with sufficient current to switch at frequencies above 500 kHz. The 5 A peak current charges typical MOSFET gate capacitances in tens of nanoseconds, holding dead-time losses to a minimum. Its 19 ns matched propagation delay between channels supports dual-FET synchronous topologies used in POL converters. Compared to using a controller's internal driver, the 2EDN7434RXTMA1 reduces switching loss by 20-40 percent in 12 V to 1 V POL stages driving high-current ASICs.
Recommended
Motor Control Half-Bridges
The 2EDN7434RXTMA1 drives the low-side switches in discrete half-bridge motor-drive stages for small BLDC and stepper motor applications. Each channel independently controls one low-side FET, allowing flexible commutation patterns from a microcontroller. The active output voltage clamping protects the gate oxide during inductive switching transients, which is especially valuable when driving motors with significant winding inductance. The compact PG-TSSOP-8 footprint enables integration into space-constrained motor-control PCBs used in drones, robotics, and small appliances.
Recommended
Class-D Audio Amplifiers
In Class-D audio amplifier output stages, the 2EDN7434RXTMA1 drives the low-side FETs of each half-bridge with the precision needed to maintain audio fidelity. The 19 ns matched propagation delay between channels keeps the dead-time symmetrical, minimizing distortion at the audio output. The 5 A peak current ensures clean switching even at high modulation frequencies above 250 kHz. Compared to integrated gate-driver ICs, the 2EDN7434RXTMA1 allows designers to pair any preferred output MOSFET pair for optimal audio performance and EMI control.
Recommended
GaN and SiC Transistor Drivers
Wide-bandgap transistors such as GaN HEMTs and SiC MOSFETs require gate drivers with very high peak current capability to charge their small but demanding gate capacitances quickly. The 2EDN7434RXTMA1's 5 A peak source/sink current and low output resistance deliver the edge rates that GaN and SiC devices need to operate at their full switching-frequency potential. The active output voltage clamping protects the gate of these sensitive devices from over-voltage spikes during fast switching events. In 400 V to 48 V DC-DC converters for EV and renewable applications, this driver enables switching frequencies above 100 kHz.
Recommended
Synchronous Rectifier Drivers
The 2EDN7434RXTMA1 drives the synchronous-rectifier MOSFETs on the secondary side of isolated DC-DC converters, replacing lossy Schottky diodes with low-RDS(on) FETs to boost efficiency. Its dual-channel output drives two synchronous rectifiers simultaneously, ideal for center-tapped or full-wave rectifier topologies commonly found in 48 V telecom and server power architectures. The 5 A peak current ensures the synchronous FETs can switch at the converter's primary switching frequency without becoming the bottleneck. Compared to using Schottky diodes, synchronous rectification with the 2EDN7434RXTMA1 improves converter efficiency by 3-6 percent.
Recommended
Recommended Products Summary
Engineering reference data for 2EDN7434RXTMA1 β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | 2EDN7434RXUMA1 | 2EDN7434R | 2EDN7524GXTMA1 | 1EDN7136UXTSA1 | 1EDN7136GXTMA1 |
|---|---|---|---|---|---|---|
| Package | PG-TSSOP-8 (3.0 x 3.0 mm) | PG-TSSOP-8 - same | PG-TSSOP-8 - same | PG-TSSOP-8 - same | PG-TSSOP-8 - same | PG-TSSOP-8 - same |
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Channels | 2 (dual) | 2 (dual) | 2 (dual) | 2 (dual) | 1 (single) | 1 (single) |
| Peak Output Current | 5 A | 5 A | 5 A | 5 A | 5 A | 5 A |
| Propagation Delay (Typ.) | 19 ns | 19 ns | 19 ns | 19 ns | 20 ns | 20 ns |
| Active Output Clamping | Yes | Yes | Yes | Yes | Yes | Yes |
| Input Logic | Non-inverting LV-TTL | Non-inverting LV-TTL | Non-inverting LV-TTL | Non-inverting LV-TTL | Non-inverting LV-TTL | Non-inverting LV-TTL |
Key Differentiators
- 5 A peak source/sink with 19 ns matched propagation delay in compact PG-TSSOP-8 (vs TI UCC27524)
- Active output voltage clamping for WBG protection (vs TI UCC27524)
- Wide input voltage tolerance (-12 V to +22 V absolute max) (vs 1EDN7136UXTSA1 (single-channel variant))
Design Notes
Place the VDD bypass capacitor (typically 100 nF ceramic) as close as possible to the VDD pin and GND pin of the 2EDN7434RXTMA1. Use a low-inductance ground return directly to the exposed thermal pad, which must be soldered to a sufficiently large copper pour for thermal dissipation. Gate-trace lengths should be minimized (under 25 mm where possible) to control parasitic inductance that causes gate ringing and potential shoot-through.
Do not exceed the absolute maximum input voltage range of -12 V to +22 V on the IN1/IN2 pins, as damage to the LV-TTL input structure may occur. Avoid floating inputs; always drive IN1 and IN2 from a defined logic source even when a channel is unused, by tying the unused input through a 10 kohm resistor to GND. The exposed thermal pad must be soldered to the PCB for proper thermal and electrical performance - skipping this step can cause thermal shutdown under sustained high-current switching.
Route the two output traces (OUT1 and OUT2) symmetrically to minimize channel-to-channel skew in matched-timing applications such as Class-D audio. Keep high-current switching loops (VDD to OUT to gate to source back to GND) as small as physically possible to minimize parasitic inductance and EMI. If driving GaN or SiC transistors, add a small gate-source resistor (typically 2-10 ohm) close to the driven transistor to dampen high-frequency ringing without significantly slowing edge rates.
Compliance Information
RoHS and REACH compliance per Infineon product page; AEC-Q100 not applicable for this industrial-grade gate driver. Halogen-free status not stated in verified web data.
