1EDN7146UXTSA1 vs 2EDN7434RXTMA1 비교
다음의 상세 나란히 비교: 1EDN7146UXTSA1 제조: Infineon 및 2EDN7434RXTMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | 1EDN7146UXTSA1 | 2EDN7434RXTMA1 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | Power MOSFET Drivers | Power MOSFET Drivers |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.82 | $0.34 |
| Driver Type | Single-channel high-side TDI gate driver | — |
| Maximum Blocking Voltage | 200 V | — |
| Input Configuration | Truly differential (TDI) | — |
| Output Current (Source / Sink) | 1.5 A / 2.5 A | — |
| Propagation Delay | [DATA_NEEDED: typical propagation delay ns] | — |
| 상승 시간 | [DATA_NEEDED: typical rise time ns] | — |
| 하강 시간 | [DATA_NEEDED: typical fall time ns] | — |
| Supply Voltage (VCC) | [DATA_NEEDED: VCC range V] | — |
| 동작 온도 범위 | -40C to +125C | [DATA_NEEDED: operating temperature] |
| 패키지 | PG-VSON-1 (6-pin with exposed pad) | PG-TSSOP-8 (3.0 x 3.0 mm) |
| 실장 유형 | Surface Mount | Surface Mount |
| Target Transistor | GaN SG HEMT or power MOSFET | — |
| MSL 레벨 | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL rating] |
| RoHS 상태 | Compliant | Compliant |
| Topology Support | Half-bridge, low-side, high-side | — |
| Manufacturer | — | Infineon Technologies |
| Part Family | — | EiceDRIVER 2EDN |
| Driver Configuration | — | Dual-channel low-side |
| Number of Drivers | — | 2 |
| Peak Output Current | — | 5 A (source/sink) |
| Rated Output Current | — | 4 A |
| Output Resistance (Low) | — | [DATA_NEEDED: output resistance Ron low] |
| Output Resistance (High) | — | [DATA_NEEDED: output resistance Ron high] |
| Propagation Delay (Typ.) | — | 19 ns |
| Input Logic Compatibility | — | LV-TTL, non-inverting |
| Absolute Max Input Voltage | — | -12 V to +22 V |
| Supply Voltage Range | — | [DATA_NEEDED: VDD range] |
| Active Output Voltage Clamping | — | Yes |