2ED21834S06JXUMA1 vs 2EDN7534FXTMA1 Comparison

Detailed side-by-side comparison of 2ED21834S06JXUMA1 by Infineon and 2EDN7534FXTMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter 2ED21834S06JXUMA1 2EDN7534FXTMA1
Brand Infineon Infineon
Category Power MOSFET Drivers Power MOSFET Drivers
Lifecycle Status Active Active
Product Type Half-Bridge Gate Driver IC —
Configuration Half-bridge (high-side + low-side) —
Maximum Offset Voltage (VBS) 650 V —
Typical Sink Current 2.5 A —
Typical Source Current 2.5 A —
Input Logic Non-Inverting —
Integrated Bootstrap Diode Yes —
Technology SOI (Silicon-On-Insulator) high-voltage —
Under-Voltage Lockout (UVLO) Yes (VCC and VBS) —
Package PG-DSO-14-49 (DSO-14) PG-DSO-8
Number of Pins 14 —
Mounting Type Surface Mount Surface Mount
Operating Temperature Range -40 °C to +125 °C —
RoHS Status Compliant Compliant
Standard Reel Quantity 3000 —
Driver Type — Low-Side, Dual Channel
Number of Drivers — 2
Peak Output Current — 5 A (source/sink)
Supply Voltage (VDD) — 4.5 V to 20 V
Input Voltage Range (logic pins) — -12 V to +22 V (absolute max)
Propagation Delay (typical) — 19 ns
Input Logic Compatibility — LV-TTL
Output Polarity — Non-Inverting
Output Voltage Clamping — Active, to VDD
Rise Time (typ.) — [DATA_NEEDED: rise time]
Fall Time (typ.) — [DATA_NEEDED: fall time]
Channel-to-Channel Skew — [DATA_NEEDED: channel skew]
Under-Voltage Lockout — Yes
Enable Pin — Yes
Operating Temperature — -40C to +125C

Datasheets & Resources

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