2ED21834S06JXUMA1 - 650V 2.5A Half-Bridge Gate Driver | Infineon
MPN: 2ED21834S06JXUMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $2.18 | $2.18 |
| 10 | $1.92 | $19.20 |
| 100 | $1.58 | $158.00 |
| 500 | $1.31 | $655.00 |
| 1,000 | $1.05 | $1,050.00 |
| 3,000 | $0.89 | $2,670.00 |
Drop-in alternatives for 2ED21834S06JXUMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
2ED2183S06FXUMA1
✅ Drop-In✓ In Stock
$1.05 / Unit
View Datasheet →2ED21824S06JXUMA1
✅ Drop-In📋 Reference alternative (not in catalog)
2ED2181S06FXUMA1
✅ Drop-In📋 Reference alternative (not in catalog)
2EDN7534FXTMA1
✅ Drop-In✓ In Stock
$0.71 / Unit
View Datasheet →1EDB8275FXUMA1
✅ Drop-In✓ In Stock
$1.72 / Unit
View Datasheet →IRS2184SPBF
✅ Drop-In✓ In Stock
$0.99 / Unit
View Datasheet →IR2011SPBF
✅ Drop-In✓ In Stock
$1.18 / Unit
View Datasheet →2ED21834S06JXUMA1 Maximum Ratings & Electrical Characteristics
| Product Type | Half-Bridge Gate Driver IC |
| Configuration | Half-bridge (high-side + low-side) |
| Maximum Offset Voltage (VBS) | 650 V |
| Typical Sink Current | 2.5 A |
| Typical Source Current | 2.5 A |
| Input Logic | Non-Inverting |
| Integrated Bootstrap Diode | Yes |
| Technology | SOI (Silicon-On-Insulator) high-voltage |
| Under-Voltage Lockout (UVLO) | Yes (VCC and VBS) |
| Package | PG-DSO-14-49 (DSO-14) |
| Number of Pins | 14 |
| Mounting Type | Surface Mount |
| Operating Temperature Range | -40 °C to +125 °C |
| RoHS Status | Compliant |
| Standard Reel Quantity | 3000 |
2ED21834S06JXUMA1 Pin Configuration
| Pin 1 | VCC — Low-side and logic supply voltage (typically 12 V); decouple to GND with 100 nF + 1 µF ceramic. |
| Pin 2 | IN_H — Logic input for the high-side driver (non-inverting; H = HO high). |
| Pin 3 | IN_L — Logic input for the low-side driver (non-inverting; H = LO high). |
| Pin 4 | GND — Logic and low-side gate-drive return; connect to power ground. |
| Pin 5 | /EN — Enable input (active-low); pull high to disable both outputs. |
| Pin 6 | LO — Low-side gate-drive output to the low-side switch gate. |
| Pin 7 | VS — High-side return / switching node; tie to the half-bridge midpoint. |
| Pin 8 | HO — High-side gate-drive output to the high-side switch gate. |
| Pin 9 | VB — High-side bootstrap supply; connect a 1 µF (min) low-ESR ceramic from VB to VS. |
| Pin 10 | NC — Not connected (per datasheet); leave floating or tie to GND. |
| Pin 11 | VSS — Reserved / no-connect for the DSO-14-49 variant; ground recommended for noise immunity. |
| Pin 12 | NC — Not connected (per datasheet). |
| Pin 13 | NC — Not connected (per datasheet). |
| Pin 14 | PAD — Exposed thermal pad; tie to GND for heat spreading and electrical reference. |
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this component. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
2ED21834S06JXUMA1 is suitable for 6 applications: PMSM / BLDC Motor Drive, Solar String Inverter Half-Bridge, Server / Telecom SMPS, Power Factor Correction (PFC) Boost, Half-Bridge and Full-Bridge Converters, HID Lighting and Electronic Ballast.
PMSM / BLDC Motor Drive
The 2ED21834S06JXUMA1's 650 V high-side tolerance and 2.5 A drive current make it well-suited to three-phase PMSM and BLDC motor drives in industrial servo and appliance applications. The driver's SOI technology provides robust negative VS transient immunity, which is critical when the motor's winding inductance causes VS to undershoot below ground during hard-switched commutation. The integrated bootstrap diode simplifies the high-side supply for each of the three half-bridge phases, reducing BOM and PCB area versus designs with discrete boot diodes. Typical usage places the driver downstream of an MCU or DSP that generates the 6 PWM signals, with the three driver outputs feeding the gates of the inverter MOSFETs or IGBTs.
Recommended
Solar String Inverter Half-Bridge
In solar string inverters and micro-inverters the 2ED21834S06JXUMA1 drives the half-bridge stages of the DC-DC boost and DC-AC H-bridge converters at bus voltages up to 600 V. The driver's 650 V offset rating provides margin for the worst-case 480 Vrms grid-tie bus with overshoot transients. Integrated bootstrap reduces per-switch component count, which matters in residential inverters where cost-per-watt is critical. Place the driver close to the half-bridge MOSFETs/IGBTs, with a 1 µF X7R bootstrap capacitor and a 100 nF VCC decoupling cap within 5 mm of the IC pins. The matched propagation delay between channels prevents duty-cycle distortion at high switching frequencies.
Recommended
Server / Telecom SMPS
The 2ED21834S06JXUMA1 is used in the primary-side half-bridge LLC or phase-shift full-bridge converter of AC-DC server and telecom power supplies, where 400 VDC bus is the standard intermediate rail. With 2.5 A drive current and 650 V class, the driver comfortably handles 600 V bus designs with adequate derating. The integrated bootstrap diode and matched channel delays contribute to predictable dead-time behavior, which is essential for high-efficiency LLC topologies. The PG-DSO-14 package's exposed thermal pad keeps junction temperature low under continuous switching at 100-500 kHz. Use a low-ESR ceramic bypass on VCC and a 1 µF minimum bootstrap capacitor for stable high-side supply.
Recommended
Power Factor Correction (PFC) Boost
In continuous-conduction-mode (CCM) PFC boost converters the 2ED21834S06JXUMA1 is typically used to drive the boost switch where the input rectifier bridge and inductor connect to a 400 VDC bus. The driver's 650 V rating and 2.5 A drive current suit 600 V-class SiC or silicon MOSFET boost switches. The integrated bootstrap eliminates the need for an external boot diode in the simple boost-switch-only topology. The driver's non-inverting input logic matches standard PFC controller outputs. UVLO on VCC prevents the boost switch from being driven with insufficient gate voltage, which would otherwise cause partial-turn-on and severe switching losses.
Recommended
Half-Bridge and Full-Bridge Converters
The 2ED21834S06JXUMA1 is a natural fit for hard-switched half-bridge and full-bridge DC-DC converters used in industrial welding, induction heating, and battery formation equipment. The driver's 2.5 A source/sink current enables fast switching of large IGBT modules, reducing switching losses at high PWM frequencies. The SOI dielectric isolation prevents parasitic latch-up under harsh dv/dt conditions typical of 50-200 kHz hard-switched bridge designs. Use this driver in pairs (one per half-bridge leg) with a digital isolator providing the high-side control signal in full-bridge applications. The 14-pin PG-DSO footprint supports standard SOIC-14 PCB land patterns.
Recommended
HID Lighting and Electronic Ballast
In high-intensity-discharge (HID) lighting ballasts and electronic fluorescent ballasts, the 2ED21834S06JXUMA1 drives the half-bridge inverter that converts DC bus to high-frequency AC for the lamp. The 650 V offset is well-matched to typical 400 V ballast bus voltages, and the 2.5 A drive current handles the high peak currents demanded by the lamp's ignition transients. The integrated bootstrap diode reduces ballast cost, important in cost-sensitive consumer lighting. The driver's UVLO thresholds prevent the half-bridge from oscillating with insufficient gate drive, which is critical for lamp life and reliability.
Recommended
Recommended Products Summary
Engineering reference data for 2ED21834S06JXUMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | 2ED2183S06FXUMA1 | 2ED21824S06JXUMA1 | 2ED2181S06FXUMA1 | IRS2184SPBF |
|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon (legacy IR) |
| Package | PG-DSO-14-49 (14-pin) | DSO-8 (8-pin) | PG-DSO-14-49 (14-pin) | DSO-8 (8-pin) | SOIC-8 (8-pin) |
| Topology | Half-bridge | Half-bridge | Half-bridge | Half-bridge | Half-bridge |
| Maximum Offset Voltage | 650 V | 650 V | 1200 V | 650 V | 600 V |
| Source / Sink Drive Current | 2.5 A / 2.5 A | 2.5 A / 2.5 A | 2.5 A / 2.5 A | 1.0 A / 1.0 A | 2.3 A / 1.9 A |
| Integrated Bootstrap Diode | Yes | Yes | Yes | Yes | No (external required) |
| Technology | SOI (high-voltage isolated) | SOI | SOI | SOI | Junction-isolated (legacy) |
| Input Logic | Non-Inverting | Non-Inverting | Non-Inverting | Non-Inverting | Inverting (legacy) |
Key Differentiators
- Integrated bootstrap diode eliminates external boot-diode BOM and reduces PCB area (vs IRS2184SPBF)
- SOI technology provides best-in-class negative VS transient immunity (vs IRS2184SPBF (junction-isolated legacy))
- Matched propagation delay between channels reduces duty-cycle distortion at high PWM frequency (vs 2ED2181S06FXUMA1 (same family, 1 A drive))
Design Notes
Decouple VCC with a 100 nF X7R ceramic placed within 5 mm of the VCC pin, plus a bulk 1 µF X7R on the same node. The 2ED21834S06J draws a few mA of quiescent current plus dynamic current during switching transitions; insufficient decoupling causes VCC dip and potential UVLO false-triggering. Add a 1 µF X7R bootstrap capacitor from VB to VS; values below 1 µF can cause VS undershoot to collapse the high-side rail at high duty cycles. Source: Infineon 2ED2183 family datasheet, application section.
The PG-DSO-14-49 package has a small exposed thermal pad on pin 14. Solder this pad to a copper pour of at least 50 mm² on the top or bottom layer, with thermal vias to the opposite layer. Although the driver's internal dissipation is low (typically <500 mW), the exposed pad is the primary heat path and a poor connection can raise junction temperature by 20-30 °C. Source: Infineon PG-DSO-14 package thermal data.
Keep the high-current switching loop (HO → high-side MOSFET gate → source → VS return → back to driver) as small as possible to minimize parasitic inductance. Route the HO and VS traces as a tightly coupled differential pair directly above each other on adjacent layers. Place the driver within 10 mm of the half-bridge midpoint to keep the VS return path short. The bootstrap capacitor return (VS) must connect to the source of the high-side switch, not to power ground, or the high-side rail will see the parasitic inductance of the source bond wire. Source: Infineon 2ED2183 layout guide.
Do not float pin 5 (/EN) - tie to VCC through a 100 kΩ pull-up to keep the driver enabled; an open /EN pin can drift to a midpoint voltage and cause intermittent enable/disable. Do not exceed the absolute maximum VBS-to-VS voltage of 25 V; the internal bootstrap diode clamps transient overshoots but steady-state VBS must be ≤ 15 V. When driving very large IGBTs with Qg > 100 nC, consider adding an external gate resistor (5-47 Ω) to limit ringing and control dv/dt. Source: Infineon datasheet absolute maximum table and application notes.
Compliance Information
RoHS and REACH compliance per Infineon product page. Not AEC-Q100 qualified; for automotive motor-drive applications, choose the automotive-grade variant if available in the same family. Halogen-free status not explicitly confirmed in web data; treat as unknown. Conflict-minerals compliance is the standard Infineon policy.
