2ED21834S06JXUMA1 vs 2EDN7534FXTMA1 比較

詳細並排比較 2ED21834S06JXUMA1 由 Infineon 與 2EDN7534FXTMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
2ED21834S06JXUMA1 2ED21834S06JXUMA1 - 650V 2.5A Half-Bridge Gate Driver | Infineon

2ED21834S06JXUMA1 - 650V 2.5A Half-Bridge Gate Driver | Infineon

2ED21834S06JXUMA1 ✓ 啟用中

規格比較

參數 2ED21834S06JXUMA1 2EDN7534FXTMA1
品牌 Infineon Infineon
類別 Power MOSFET Drivers Power MOSFET Drivers
生命週期狀態 啟用中 啟用中
Product Type Half-Bridge Gate Driver IC —
Configuration Half-bridge (high-side + low-side) —
Maximum Offset Voltage (VBS) 650 V —
Typical Sink Current 2.5 A —
Typical Source Current 2.5 A —
Input Logic Non-Inverting —
Integrated Bootstrap Diode Yes —
Technology SOI (Silicon-On-Insulator) high-voltage —
Under-Voltage Lockout (UVLO) Yes (VCC and VBS) —
封裝 PG-DSO-14-49 (DSO-14) PG-DSO-8
腳位數 14 —
安裝類型 Surface Mount Surface Mount
工作溫度範圍 -40 °C to +125 °C —
RoHS 狀態 Compliant Compliant
Standard Reel Quantity 3000 —
Driver Type — Low-Side, Dual Channel
Number of Drivers — 2
Peak Output Current — 5 A (source/sink)
Supply Voltage (VDD) — 4.5 V to 20 V
Input Voltage Range (logic pins) — -12 V to +22 V (absolute max)
Propagation Delay (typical) — 19 ns
Input Logic Compatibility — LV-TTL
Output Polarity — Non-Inverting
Output Voltage Clamping — Active, to VDD
Rise Time (typ.) — [DATA_NEEDED: rise time]
Fall Time (typ.) — [DATA_NEEDED: fall time]
Channel-to-Channel Skew — [DATA_NEEDED: channel skew]
Under-Voltage Lockout — Yes
致能腳位 — Yes
工作溫度 — -40C to +125C

資料表與資源

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