2ED21834S06JXUMA1 vs IRS2184SPBF Comparison

Detailed side-by-side comparison of 2ED21834S06JXUMA1 by Infineon and IRS2184SPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter 2ED21834S06JXUMA1 IRS2184SPBF
Brand Infineon Infineon
Category Power MOSFET Drivers Power MOSFET Drivers
Lifecycle Status Active Active
Product Type Half-Bridge Gate Driver IC Half-Bridge Gate Driver IC
Configuration Half-bridge (high-side + low-side) High-side and Low-side referenced outputs, dependent channels
Maximum Offset Voltage (VBS) 650 V —
Typical Sink Current 2.5 A —
Typical Source Current 2.5 A —
Input Logic Non-Inverting —
Integrated Bootstrap Diode Yes —
Technology SOI (Silicon-On-Insulator) high-voltage Proprietary HVIC and latch-immune CMOS
Under-Voltage Lockout (UVLO) Yes (VCC and VBS) —
Package PG-DSO-14-49 (DSO-14) 8-SOIC (SOIC-8)
Number of Pins 14 —
Mounting Type Surface Mount Surface Mount
Operating Temperature Range -40 °C to +125 °C -40C to +125C
RoHS Status Compliant Compliant (PbF suffix indicates lead-free)
Standard Reel Quantity 3000 —
Number of Outputs — 2
Output Polarity — Non-Inverting
Offset Voltage (High-Side) — 600 V maximum
Peak Source Current — 1.9 A typical
Peak Sink Current — 2.3 A typical
Logic Supply Voltage (VCC) — 10 V to 20 V
Logic Input Compatibility — 3.3 V and 5 V CMOS / LSTTL
Bootstrap Supply (VBS) — 10 V to 20 V (UVLO protected)
Propagation Delay (typ.) — [DATA_NEEDED: propagation delay matched both channels]
MSL Level — [DATA_NEEDED: MSL rating]

Datasheets & Resources

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