2EDL8033G4CXTMA1 vs 2EDL6014ACG2DXTMA1 Comparison

Detailed side-by-side comparison of 2EDL8033G4CXTMA1 by Infineon and 2EDL6014ACG2DXTMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter 2EDL8033G4CXTMA1 2EDL6014ACG2DXTMA1
Brand Infineon Infineon
Category Power MOSFET Drivers Power MOSFET Drivers
Lifecycle Status Active Active
Product Type Half-Bridge Gate Driver IC —
Configuration High-Side / Low-Side, Non-Inverting —
Number of Outputs 2 (HS + LS) —
Source Drive Current 3 A —
Sink Drive Current 4 A —
Bootstrap Voltage (Max) 120 V —
VCC Supply Voltage 10 V to 20 V —
Logic Input Compatibility 3.3 V / 5 V CMOS / TTL —
Isolation Technology Junction-isolated —
Propagation Delay (Typ) 45 ns —
Channel-to-Channel Matching <10 ns —
Integrated Bootstrap Diode Yes —
Operating Temperature Range -40C to +125C —
Package PG-VDSON-10-2 (10-pin VDSON with exposed pad) 11-WQFN (2.2 x 2.2 mm) with exposed pad
Mounting Type Surface Mount Surface Mount
Marking Code 2ED8033G4C —
RoHS Status Compliant —
Driver Type — Half-Bridge Gate Driver
Number of Channels — 2 (high-side + low-side)
Output Configuration — Non-Inverting
High-Side Voltage Rating — 120 V
Source Output Current — 4 A
Sink Output Current — 6 A
Supply Voltage (VDD) — 2.97 V to 5.5 V
Rise Time (typ.) — 4.2 ns
Fall Time (typ.) — 3.8 ns
Operating Temperature — -40 C to +125 C
Packing Method — Tape & Reel
Isolation Type — Isolated (level-shifted floating high-side)
Technology Family — EiceDRIVER 2EDL

Datasheets & Resources

Browse All Products Create BOM Request Quote