2EDN7534FXTMA1 vs 2EDN7524GXTMA1 Comparison

Detailed side-by-side comparison of 2EDN7534FXTMA1 by Infineon and 2EDN7524GXTMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter 2EDN7534FXTMA1 2EDN7524GXTMA1
Brand Infineon Infineon
Category Power MOSFET Drivers Power MOSFET Drivers
Lifecycle Status Active Active
Driver Type Low-Side, Dual Channel —
Number of Drivers 2 —
Peak Output Current 5 A (source/sink) —
Supply Voltage (VDD) 4.5 V to 20 V —
Input Voltage Range (logic pins) -12 V to +22 V (absolute max) —
Propagation Delay (typical) 19 ns —
Input Logic Compatibility LV-TTL —
Output Polarity Non-Inverting —
Output Voltage Clamping Active, to VDD —
Rise Time (typ.) [DATA_NEEDED: rise time] —
Fall Time (typ.) [DATA_NEEDED: fall time] —
Channel-to-Channel Skew [DATA_NEEDED: channel skew] —
Under-Voltage Lockout Yes —
Enable Pin Yes —
Operating Temperature -40C to +125C -40 C to +125 C
Package PG-DSO-8 PG-WSON-8-1 (3 mm x 3 mm) with exposed thermal pad
Mounting Type Surface Mount Surface Mount
RoHS Status Compliant Compliant
Product Type — Low-side gate driver IC
Number of Channels — 2 (dual)
Drive Current (Source/Sink) — 5 A peak
Input Logic — Non-inverting, TTL / 3.3 V CMOS-compatible
Input Voltage Tolerance — -10 V to +20 V on logic pins
Supply Voltage (VCC) — 4.5 V to 20 V [DATA_NEEDED: exact range]
Propagation Delay — 20 ns typical [DATA_NEEDED: exact figure]
Channel-to-Channel Delay Matching — 1 ns
Rise Time — 5 ns typical [DATA_NEEDED: exact test condition]
Fall Time — 5 ns typical [DATA_NEEDED: exact test condition]
Output Stage — Rail-to-rail, separate source/sink
UVLO Protection — Yes
MSL Level — [DATA_NEEDED: MSL level]
Target Devices — Standard MOSFETs, superjunction MOSFETs, GaN HEMTs

Datasheets & Resources

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