2EDN7534FXTMA1 vs 2EDN7524GXTMA1 对比
详细并排对比 2EDN7534FXTMA1 出自 Infineon 和 2EDN7524GXTMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Infineon
2EDN7524GXTMA1 - 5A Dual Low-Side Gate Driver for MOSFET/GaN | Infineon
2EDN7524GXTMA1 ✓ 量产中规格对比
| 参数 | 2EDN7534FXTMA1 | 2EDN7524GXTMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | Power MOSFET Drivers | Power MOSFET Drivers |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.71 | $0.82 |
| Driver Type | Low-Side, Dual Channel | — |
| Number of Drivers | 2 | — |
| Peak Output Current | 5 A (source/sink) | — |
| Supply Voltage (VDD) | 4.5 V to 20 V | — |
| Input Voltage Range (logic pins) | -12 V to +22 V (absolute max) | — |
| Propagation Delay (typical) | 19 ns | — |
| Input Logic Compatibility | LV-TTL | — |
| Output Polarity | Non-Inverting | — |
| Output Voltage Clamping | Active, to VDD | — |
| Rise Time (typ.) | [DATA_NEEDED: rise time] | — |
| Fall Time (typ.) | [DATA_NEEDED: fall time] | — |
| Channel-to-Channel Skew | [DATA_NEEDED: channel skew] | — |
| Under-Voltage Lockout | Yes | — |
| 使能引脚 | Yes | — |
| 工作温度 | -40C to +125C | -40 C to +125 C |
| 封装 | PG-DSO-8 | PG-WSON-8-1 (3 mm x 3 mm) with exposed thermal pad |
| 安装类型 | Surface Mount | Surface Mount |
| RoHS 状态 | Compliant | Compliant |
| Product Type | — | Low-side gate driver IC |
| Number of Channels | — | 2 (dual) |
| Drive Current (Source/Sink) | — | 5 A peak |
| Input Logic | — | Non-inverting, TTL / 3.3 V CMOS-compatible |
| Input Voltage Tolerance | — | -10 V to +20 V on logic pins |
| Supply Voltage (VCC) | — | 4.5 V to 20 V [DATA_NEEDED: exact range] |
| Propagation Delay | — | 20 ns typical [DATA_NEEDED: exact figure] |
| Channel-to-Channel Delay Matching | — | 1 ns |
| 上升时间 | — | 5 ns typical [DATA_NEEDED: exact test condition] |
| 下降时间 | — | 5 ns typical [DATA_NEEDED: exact test condition] |
| Output Stage | — | Rail-to-rail, separate source/sink |
| UVLO Protection | — | Yes |
| MSL 等级 | — | [DATA_NEEDED: MSL level] |
| Target Devices | — | Standard MOSFETs, superjunction MOSFETs, GaN HEMTs |