2EDN7534FXTMA1 vs 2EDN7524GXTMA1 Vergleich
Detaillierter Direktvergleich von 2EDN7534FXTMA1 von Infineon und 2EDN7524GXTMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
2EDN7524GXTMA1 - 5A Dual Low-Side Gate Driver for MOSFET/GaN | Infineon
2EDN7524GXTMA1 ✓ AktivSpezifikationsvergleich
| Parameter | 2EDN7534FXTMA1 | 2EDN7524GXTMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | Power MOSFET Drivers | Power MOSFET Drivers |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,71 | $0,82 |
| Driver Type | Low-Side, Dual Channel | — |
| Number of Drivers | 2 | — |
| Peak Output Current | 5 A (source/sink) | — |
| Supply Voltage (VDD) | 4.5 V to 20 V | — |
| Input Voltage Range (logic pins) | -12 V to +22 V (absolute max) | — |
| Propagation Delay (typical) | 19 ns | — |
| Input Logic Compatibility | LV-TTL | — |
| Output Polarity | Non-Inverting | — |
| Output Voltage Clamping | Active, to VDD | — |
| Rise Time (typ.) | [DATA_NEEDED: rise time] | — |
| Fall Time (typ.) | [DATA_NEEDED: fall time] | — |
| Channel-to-Channel Skew | [DATA_NEEDED: channel skew] | — |
| Under-Voltage Lockout | Yes | — |
| Enable-Pin | Yes | — |
| Betriebstemperatur | -40C to +125C | -40 C to +125 C |
| Gehäuse | PG-DSO-8 | PG-WSON-8-1 (3 mm x 3 mm) with exposed thermal pad |
| Montageart | Surface Mount | Surface Mount |
| RoHS-Status | Compliant | Compliant |
| Product Type | — | Low-side gate driver IC |
| Number of Channels | — | 2 (dual) |
| Drive Current (Source/Sink) | — | 5 A peak |
| Input Logic | — | Non-inverting, TTL / 3.3 V CMOS-compatible |
| Input Voltage Tolerance | — | -10 V to +20 V on logic pins |
| Supply Voltage (VCC) | — | 4.5 V to 20 V [DATA_NEEDED: exact range] |
| Propagation Delay | — | 20 ns typical [DATA_NEEDED: exact figure] |
| Channel-to-Channel Delay Matching | — | 1 ns |
| Anstiegszeit | — | 5 ns typical [DATA_NEEDED: exact test condition] |
| Abfallzeit | — | 5 ns typical [DATA_NEEDED: exact test condition] |
| Output Stage | — | Rail-to-rail, separate source/sink |
| UVLO Protection | — | Yes |
| MSL-Level | — | [DATA_NEEDED: MSL level] |
| Target Devices | — | Standard MOSFETs, superjunction MOSFETs, GaN HEMTs |