2EDR8258XXUMA1 vs 1ED3124MC12HXUMA1 Comparison
Detailed side-by-side comparison of 2EDR8258XXUMA1 by Infineon and 1ED3124MC12HXUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
2EDR8258XXUMA1
2EDR8258XXUMA1 - 5A/9A Isolated Gate Driver, 5.7kV | Infineon
2EDR8258XXUMA1 β ActiveInfineon
1ED3124MC12HXUMA1 - 14A Isolated Gate Driver, 5.7kV | Infineon
1ED3124MC12HXUMA1 β ActiveSpecification Comparison
| Parameter | 2EDR8258XXUMA1 | 1ED3124MC12HXUMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | Power MOSFET Drivers | Power MOSFET Drivers |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.74 | $1.45 |
| Product Type | Isolated single-channel gate driver | β |
| Isolation Technology | Magnetic (coreless transformer) coupling | Magnetic coupling (coreless transformer) |
| Number of Channels | 1 | β |
| Number of Outputs | 2 (high-side and low-side, half-bridge) | 1 |
| Peak Source Current | 5 A | 13.5 A |
| Peak Sink Current | 9 A | 14 A |
| Galvanic Isolation (rms) | 5700 Vrms | β |
| Galvanic Isolation (peak) | 8000 Vpk | β |
| Common-Mode Transient Immunity (CMTI) | 150 V/ns | β |
| Propagation Delay (typical) | 38 ns | β |
| Driver Supply Voltage (VCC, VBS) | 8 V to 20 V | β |
| Input Supply Voltage (VDD) | 3 V to 5.5 V | β |
| Operating Temperature Range | -40 Β°C to +125 Β°C | β |
| Package | PG-DSO-14 (14-pin) | PG-DSO-8 (DSO-8) |
| Protection Features | UVLO (VCC/VBS), DESAT short-circuit, enable/shutdown, dead-time control, interleaving protection | β |
| Logic Input | Non-inverting, CMOS compatible | β |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | Compliant | Compliant |
| Channel Type | β | Single-channel |
| Configuration | β | High-side / Low-side (non-inverting) |
| Number of Drivers | β | 1 |
| Isolation Voltage (RMS) | β | 5.7 kV |
| Transient Overvoltage | β | 8000 Vpk |
| Supply Voltage (VCC2) | β | 10.5 V to 35 V |
| Supply Current (Max) | β | 1.1 mA |
| Propagation Delay (Typ) | β | 90 ns |
| Rise Time | β | 15 ns |
| Fall Time | β | 30 ns |
| Operating Temperature | β | -40 C to +125 C |
| Protections | β | UVLO, Short-Circuit (DESAT) |
| Target Devices | β | IGBT, SiC MOSFET |