6EDL04N03PRXUMA1 vs 6EDL04N02PRXUMA1 Comparison
Detailed side-by-side comparison of 6EDL04N03PRXUMA1 by Infineon and 6EDL04N02PRXUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
6EDL04N03PRXUMA1
6EDL04N03PRXUMA1 - 3-Phase Gate Driver, 25V/0.24A | Infineon
6EDL04N03PRXUMA1 β Active
Specification Comparison
| Parameter | 6EDL04N03PRXUMA1 | 6EDL04N02PRXUMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | Power MOSFET Drivers | Power MOSFET Drivers |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.85 | $2.32 |
| Driver Type | Three-phase gate driver (6-channel half-bridge) | β |
| Number of Drivers | 6 | β |
| Output Configuration | Non-inverting half-bridge | β |
| Supply Voltage (VDD) | 10 V to 25 V | β |
| Logic Supply Voltage (VSS) | 3.3 V / 5 V | β |
| Output Current (Source) | 0.24 A | β |
| Output Current (Sink) | 0.375 A | β |
| Rise Time | 60 ns (typical at 1 nF load) | β |
| Fall Time | 26 ns (typical at 1 nF load) | β |
| Bootstrap Diode | Integrated (3 channels) | Integrated (BSD) on all 3 high-side drivers |
| Over-Current Protection | Yes (adjustable threshold via ITRIP) | Yes (single-shunt, ITRIP/CIN pin) |
| Fault Output | Yes (open-drain) | β |
| Enable Pin | Yes (EN, active-high) | β |
| Propagation Delay | [DATA_NEEDED: propagation delay] | β |
| Operating Temperature | -40 C to +125 C | β |
| Package | PG-TSSOP-25 | PG-TSSOP-28 (28-pin, 4.40 mm width, exposed pad) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | 3 | MSL3 (per JEDEC J-STD-020, [DATA_NEEDED: confirm level]) |
| RoHS Status | Compliant | Compliant |
| Blocking Voltage | 200 V / 600 V family | β |
| Product Type | β | 3-Phase Gate Driver IC |
| Driver Configuration | β | Half-bridge (3 high-side + 3 low-side) |
| Maximum Blocking Voltage | β | +180 V (VS referenced to GND for high side) |
| Rated Supply Voltage (VCC) | β | 200 V class (operating range 10 V to 20 V on VCC) |
| Source Current (typ.) | β | 0.375 A |
| Sink Current (typ.) | β | 0.75 A |
| Enable Pin (EN) | β | Yes (active-high) |
| Fault Output (nFAULT) | β | Yes (active-low, open-drain) |
| Input Logic Compatibility | β | CMOS / LSTTL, 3.3 V and 5 V |
| Interlocking / Anti-shoot-through | β | Yes (built-in per phase pair) |
| Process Technology | β | Thin-film SOI (Silicon-On-Insulator) |
| Operating Temperature Range | β | -40 Β°C to +125 Β°C |
| Maximum Junction Temperature | β | +150 Β°C |
| Target Switches | β | MOSFETs up to 180 V, IGBTs up to 180 V |