6EDL04N03PRXUMA1 vs 6EDL04N02PRXUMA1 Vergleich

Detaillierter Direktvergleich von 6EDL04N03PRXUMA1 von Infineon und 6EDL04N02PRXUMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Infineon
6EDL04N02PRXUMA1 6EDL04N02PRXUMA1 - 200V 3-Phase Gate Driver IC | Infineon

6EDL04N02PRXUMA1 - 200V 3-Phase Gate Driver IC | Infineon

6EDL04N02PRXUMA1 ✓ Aktiv

Spezifikationsvergleich

Parameter 6EDL04N03PRXUMA1 6EDL04N02PRXUMA1
Marke Infineon Infineon
Kategorie Power MOSFET Drivers Power MOSFET Drivers
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $1,85 $2,32
Driver Type Three-phase gate driver (6-channel half-bridge) —
Number of Drivers 6 —
Ausgangskonfiguration Non-inverting half-bridge —
Supply Voltage (VDD) 10 V to 25 V —
Logic Supply Voltage (VSS) 3.3 V / 5 V —
Output Current (Source) 0.24 A —
Output Current (Sink) 0.375 A —
Anstiegszeit 60 ns (typical at 1 nF load) —
Abfallzeit 26 ns (typical at 1 nF load) —
Bootstrap Diode Integrated (3 channels) Integrated (BSD) on all 3 high-side drivers
Over-Current Protection Yes (adjustable threshold via ITRIP) Yes (single-shunt, ITRIP/CIN pin)
Fault Output Yes (open-drain) —
Enable-Pin Yes (EN, active-high) —
Propagation Delay [DATA_NEEDED: propagation delay] —
Betriebstemperatur -40 C to +125 C —
Gehäuse PG-TSSOP-25 PG-TSSOP-28 (28-pin, 4.40 mm width, exposed pad)
Montageart Surface Mount Surface Mount
MSL-Level 3 MSL3 (per JEDEC J-STD-020, [DATA_NEEDED: confirm level])
RoHS-Status Compliant Compliant
Blocking Voltage 200 V / 600 V family —
Product Type — 3-Phase Gate Driver IC
Driver Configuration — Half-bridge (3 high-side + 3 low-side)
Maximum Blocking Voltage — +180 V (VS referenced to GND for high side)
Rated Supply Voltage (VCC) — 200 V class (operating range 10 V to 20 V on VCC)
Source Current (typ.) — 0.375 A
Sink Current (typ.) — 0.75 A
Enable Pin (EN) — Yes (active-high)
Fault Output (nFAULT) — Yes (active-low, open-drain)
Input Logic Compatibility — CMOS / LSTTL, 3.3 V and 5 V
Interlocking / Anti-shoot-through — Yes (built-in per phase pair)
Process Technology — Thin-film SOI (Silicon-On-Insulator)
Betriebstemperaturbereich — -40 °C to +125 °C
Maximum Junction Temperature — +150 °C
Target Switches — MOSFETs up to 180 V, IGBTs up to 180 V

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