AUIRFB8409 vs IRFB4110PBF Comparison

Detailed side-by-side comparison of AUIRFB8409 by Infineon and IRFB4110PBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter AUIRFB8409 IRFB4110PBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.80 $1.55
FET Type N-Channel —
Technology HEXFET (planar-trench MOSFET) HEXFET (planar DMOS)
Drain-Source Voltage (V<sub>DS</sub>) 40 V —
Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25°C) 195 A —
Pulsed Drain Current [DATA_NEEDED: pulsed ID value] —
R<sub>DS(on)</sub> max (V<sub>GS</sub>=10V) 1.2 mΩ (Infineon page) / 0.97 mΩ (Mouser title) —
Gate Threshold Voltage (V<sub>GS(th)</sub>) [DATA_NEEDED: Vgs(th) typical] —
Maximum Power Dissipation (P<sub>D</sub>, T<sub>C</sub>=25°C) 375 W —
Maximum Junction Temperature 175 °C —
Operating Junction Temperature -55 °C to +175 °C -55 °C to +175 °C
Package TO-220AB (through-hole, 3 leads) TO-220AB (through-hole)
Mounting Type Through Hole Through Hole
Qualification Automotive Grade (AEC-Q101 family) —
RoHS Status [DATA_NEEDED: explicit RoHS statement in datasheet] Compliant (Pb-free suffix)
Manufacturer Infineon Technologies (formerly International Rectifier) —
Transistor Type — N-Channel MOSFET
Drain-Source Voltage (VDS) — 100 V
Continuous Drain Current (ID) at TC=25°C — 120 A (bond-wire limited)
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Gate-Source Voltage (VGS) max — ±20 V
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical/min/max]
On-Resistance RDS(on) max at VGS=10V — 4.5 mΩ
On-Resistance RDS(on) typ at VGS=10V — 3.7 mΩ
Power Dissipation (PD) at TC=25°C — 370 W
Lead-Free — Yes (PBF suffix denotes Pb-free)

Datasheets & Resources

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