AUIRFB8409 vs IRFB4110PBF Comparação
Comparação detalhada lado a lado de AUIRFB8409 por Infineon e IRFB4110PBF por Infineon. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
Comparação de especificações
| Parâmetro | AUIRFB8409 | IRFB4110PBF |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoria | MOSFETs | MOSFETs |
| Status do ciclo de vida | Ativo | Ativo |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $1,80 | $1,55 |
| FET Type | N-Channel | — |
| Technology | HEXFET (planar-trench MOSFET) | HEXFET (planar DMOS) |
| Drain-Source Voltage (V<sub>DS</sub>) | 40 V | — |
| Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25°C) | 195 A | — |
| Corrente de dreno pulsada | [DATA_NEEDED: pulsed ID value] | — |
| R<sub>DS(on)</sub> max (V<sub>GS</sub>=10V) | 1.2 mΩ (Infineon page) / 0.97 mΩ (Mouser title) | — |
| Gate Threshold Voltage (V<sub>GS(th)</sub>) | [DATA_NEEDED: Vgs(th) typical] | — |
| Maximum Power Dissipation (P<sub>D</sub>, T<sub>C</sub>=25°C) | 375 W | — |
| Maximum Junction Temperature | 175 °C | — |
| Temperatura de junção de operação | -55 °C to +175 °C | -55 °C to +175 °C |
| Encapsulamento | TO-220AB (through-hole, 3 leads) | TO-220AB (through-hole) |
| Tipo de montagem | Through Hole | Through Hole |
| Qualification | Automotive Grade (AEC-Q101 family) | — |
| Status RoHS | [DATA_NEEDED: explicit RoHS statement in datasheet] | Compliant (Pb-free suffix) |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | — |
| Tipo de transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID) at TC=25°C | — | 120 A (bond-wire limited) |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical/min/max] |
| On-Resistance RDS(on) max at VGS=10V | — | 4.5 mΩ |
| On-Resistance RDS(on) typ at VGS=10V | — | 3.7 mΩ |
| Power Dissipation (PD) at TC=25°C | — | 370 W |
| Lead-Free | — | Yes (PBF suffix denotes Pb-free) |