BAT42-TAP vs 1N5711 Comparison
Detailed side-by-side comparison of BAT42-TAP by Vishay Intertechnology and 1N5711 by STMicroelectronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Vishay Intertechnology
BAT42-TAP
BAT42-TAP - 30V 200mA Schottky Diode DO-35 | Vishay
BAT42-TAP β ActiveSTMicroelectronics
1N5711
1N5711 - 70V 15mA Schottky RF Diode DO-35 | STMicroelectronics
1N5711 β ActiveSpecification Comparison
| Parameter | BAT42-TAP | 1N5711 |
|---|---|---|
| Brand | Vishay Intertechnology | STMicroelectronics |
| Category | Diodes | Diodes |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.04 | $0.18 |
| Diode Type | Small-Signal Schottky Barrier | Small-signal Schottky barrier (RF) diode |
| Repetitive Peak Reverse Voltage (VRRM) | 30 V | β |
| Average Forward Current (IF(AV)) | 200 mA | β |
| Non-Repetitive Surge Current (IFSM) | 4.0 A | β |
| Forward Voltage (VF) | [DATA_NEEDED: forward voltage at rated current] | 0.41 V (at 1 mA, per MACOM) |
| Reverse Recovery | Fast switching (Schottky, no stored charge) | β |
| Junction Capacitance | [DATA_NEEDED: diode capacitance] | β |
| Reverse Leakage Current (IR) | [DATA_NEEDED: reverse leakage at rated VR] | β |
| Package | DO-204AH (DO-35) glass axial | DO-35 (DO-204AH) hermetic axial-lead glass |
| Mounting Type | Through Hole | Through-Hole |
| Termination Style | Axial Leads | β |
| Packaging Suffix | -TAP (Ammo tape packing) | β |
| Configuration | Single Diode | β |
| Protection Feature | PN junction guard ring against ESD / excessive voltage | β |
| Operating Temperature | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| AEC-Q101 Option | Qualified version available on request | β |
| RoHS Status | Compliant | Compliant |
| Mounting Technology | Wave solder / hand solder | β |
| Peak Reverse Voltage (VRRM) | β | 70 V |
| Continuous Forward Current (IF) | β | 15 mA |
| Power Dissipation | β | 430 mW |
| Total Capacitance | β | 2 pF |
| Junction Capacitance (Cj) | β | 1 pF |
| Dynamic Resistance | β | 35 ohm |
| Breakdown Voltage (VB) | β | 70 V |
| Switching Speed | β | Picosecond class (ultrafast, no minority-carrier storage) |
| Junction Structure | β | Metal-to-silicon junction with PN guard ring |
| Reverse Leakage Current | β | [DATA_NEEDED: reverse leakage current at rated VR] |