BAT42-TAP vs 1N5711 Comparação
Comparação detalhada lado a lado de BAT42-TAP por Vishay Intertechnology e 1N5711 por STMicroelectronics. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
Comparação de especificações
| Parâmetro | BAT42-TAP | 1N5711 |
|---|---|---|
| Marca | Vishay Intertechnology | STMicroelectronics |
| Categoria | Diodes | Diodes |
| Status do ciclo de vida | Ativo | Ativo |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $0,04 | $0,18 |
| Diode Type | Small-Signal Schottky Barrier | Small-signal Schottky barrier (RF) diode |
| Repetitive Peak Reverse Voltage (VRRM) | 30 V | — |
| Average Forward Current (IF(AV)) | 200 mA | — |
| Non-Repetitive Surge Current (IFSM) | 4.0 A | — |
| Forward Voltage (VF) | [DATA_NEEDED: forward voltage at rated current] | 0.41 V (at 1 mA, per MACOM) |
| Reverse Recovery | Fast switching (Schottky, no stored charge) | — |
| Junction Capacitance | [DATA_NEEDED: diode capacitance] | — |
| Reverse Leakage Current (IR) | [DATA_NEEDED: reverse leakage at rated VR] | — |
| Encapsulamento | DO-204AH (DO-35) glass axial | DO-35 (DO-204AH) hermetic axial-lead glass |
| Tipo de montagem | Through Hole | Through-Hole |
| Termination Style | Axial Leads | — |
| Packaging Suffix | -TAP (Ammo tape packing) | — |
| Configuration | Single Diode | — |
| Protection Feature | PN junction guard ring against ESD / excessive voltage | — |
| Temperatura de operação | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| AEC-Q101 Option | Qualified version available on request | — |
| Status RoHS | Compliant | Compliant |
| Mounting Technology | Wave solder / hand solder | — |
| Peak Reverse Voltage (VRRM) | — | 70 V |
| Continuous Forward Current (IF) | — | 15 mA |
| Power Dissipation | — | 430 mW |
| Total Capacitance | — | 2 pF |
| Junction Capacitance (Cj) | — | 1 pF |
| Dynamic Resistance | — | 35 ohm |
| Breakdown Voltage (VB) | — | 70 V |
| Switching Speed | — | Picosecond class (ultrafast, no minority-carrier storage) |
| Junction Structure | — | Metal-to-silicon junction with PN guard ring |
| Reverse Leakage Current | — | [DATA_NEEDED: reverse leakage current at rated VR] |