1N5711 - 70V 15mA Schottky RF Diode DO-35 | STMicroelectronics
MPN: 1N5711 β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $0.55 | $0.55 |
| 10 | $0.42 | $4.20 |
| 100 | $0.3 | $30.00 |
| 500 | $0.22 | $110.00 |
| 1,000 | $0.18 | $180.00 |
Drop-in alternatives for 1N5711 β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
1N5712
β Drop-Inπ Reference alternative (not in catalog)
1N6263
β Drop-Inβ In Stock
$0.14 / Unit
View Datasheet β1N5711
β Drop-Inβ In Stock
$0.18 / Unit
View Datasheet β1N5711-1
β Drop-Inπ Reference alternative (not in catalog)
1N5711UR-1
β Drop-Inβ In Stock
Contact for price
View Datasheet β5082-2800
β Drop-Inπ Reference alternative (not in catalog)
1N5711 Maximum Ratings & Electrical Characteristics
| Diode Type | Schottky barrier (small signal, RF) |
| Configuration | Single diode |
| Peak Reverse Voltage | 70 V |
| Maximum Continuous Forward Current | 15 mA |
| Power Dissipation | 430 mW |
| Forward Voltage | 410 mV (typical) |
| Switching Speed | Ultrafast |
| Junction Technology | Metal-to-silicon with PN guard ring |
| Package | DO-35 (DO-204AH) axial glass |
| Mounting Type | Through Hole |
| Maximum Operating Temperature | 200 C |
| Primary Applications | UHF/VHF detection, mixing, switching, pulse shaping |
1N5711 Pin Configuration
| Pin 1 | Cathode β Cathode terminal, marked by the band on the DO-35 glass body |
| Pin 2 | Anode β Anode terminal, metal-to-silicon Schottky junction side |
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this component. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
1N5711 is suitable for 6 applications: UHF/VHF Envelope Detection, RF Mixing and Switching, Pulse Shaping and Fast Logic Gating, Sample-and-Hold and A/D Conversion Front Ends, Video Detection and Frequency Discrimination, Low-Voltage Reverse-Polarity and OR-ing Protection.
UHF/VHF Envelope Detection
The 1N5711's defining application is high-level UHF/VHF envelope detection in receivers and measurement equipment. Its guard-ring Schottky junction turns on at roughly 410 mV, about 300 mV below a PN diode such as the 1N4148, so it rectifies smaller RF carrier amplitudes and extends dynamic range downward. The guard ring also raises breakdown to 70 V, letting the detector survive high-level input stages without avalanche damage. In a typical half-wave detector, the diode feeds an RC load (for example 1 kOhm and 10 nF) whose time constant tracks the modulation envelope while rejecting the carrier. Because switching is effectively instantaneous with no minority-carrier storage, detection remains linear well into the hundreds of megahertz, and ST offers matched batches for balanced detector pairs requiring closely tracked forward characteristics.
Recommended
RF Mixing and Switching
In passive diode-ring and single-diode mixers operating at low LO power, the 1N5711's low forward voltage (410 mV typical) means the local oscillator drives the diode into conduction with less pump power than a PN junction would need, improving conversion efficiency at modest drive levels. The ultrafast Schottky switching with no charge-storage recovery keeps mixing products clean across VHF and UHF bands, and the 70 V breakdown tolerates voltage swing in high-level mixer stages. Its 15 mA current rating is sufficient for small-signal mixers but not for high-power levelers. Designers should keep series lead inductance minimal by trimming leads short and placing the diode directly at the balun or transformer node. Matched-batch pairs from ST further suppress LO feedthrough in balanced topologies where diode asymmetry converts pump energy into IF noise.
Recommended
Pulse Shaping and Fast Logic Gating
The 1N5711 serves as a pulse shaping, clamping, and gating element in UHF/VHF pulse chains and fast logic interfaces. With effective minority carrier lifetime around 100 picoseconds per the Microchip family datasheet, transition between conducting and blocking states is essentially instantaneous, sharpening edges that a recovery-limited PN diode would smear. In clipping and dc-restoration stages, the 410 mV forward knee sets a predictable clamping threshold with broader dynamic range than a 0.7 V PN clamp, which matters when preserving low-amplitude logic swings. The hermetic DO-35 glass package survives the soldering and handling of through-hole instrumentation builds. Keep lead lengths under roughly 1 cm to avoid adding nanohenry-level inductance that would degrade the very edges the diode is meant to preserve, and bias the clamp node with adequate current headroom below the 15 mA limit.
Recommended
Sample-and-Hold and A/D Conversion Front Ends
The original datasheet lists log or A-to-D converting and sampling among the 1N5711's target uses. In diode-bridge sample-and-hold circuits, matched Schottky pairs switch the analog signal to a hold capacitor with sub-nanosecond aperture, and the low forward voltage reduces the hold-pedestal error compared with PN diode bridges. The 410 mV knee and tight batch matching available from ST allow balanced bridges whose charge injection largely cancels. In log-converter front ends, the diode's exponential I-V characteristic is exploited directly, and its low turn-on extends the usable dynamic range at low signal currents. The 15 mA ceiling fits small-signal instrumentation nodes. For best acquisition accuracy, use matched-pair batches and keep the hold capacitor's charging path resistance low enough that peak diode current stays well inside the 15 mA continuous rating.
Recommended
Video Detection and Frequency Discrimination
In video detector and frequency discriminator stages of receivers and test instruments, the 1N5711 rectifies modulated IF or RF carriers into a baseband video signal. The low 410 mV forward voltage provides a broader detection dynamic range, while the guard-ring structure keeps reverse leakage manageable so the detector load does not discharge between carrier peaks, preserving low-frequency video fidelity. Its 70 V breakdown protects the stage when the front end is driven hard, and the ultrafast junction supports IFs well into the UHF range. In ratio-detector and discriminator topologies, two diodes operate in a balanced arrangement, making ST's matched batches valuable for minimizing AM-to-PM conversion and distortion. Keep the diode's cathode return path short and ground it at the detector node to avoid injecting RF into the video output.
Recommended
Low-Voltage Reverse-Polarity and OR-ing Protection
Thanks to its 410 mV forward drop, roughly 300 mV below a 1N4148, the 1N5711 suits battery-powered circuitry where every millivolt of series loss counts, such as low-voltage supply OR-ing and signal-path reverse-polarity guard clamps. In battery OR-ing, the lower knee reduces conduction loss at the small currents involved, and Schottky action avoids the reverse-recovery transients a PN diode injects when supplies switch over. The 70 V rating also makes it a robust clamp on inductive kickback from small relays and meters. The limitation is the 15 mA continuous current: it protects signal and logic rails, not power buses above tens of milliwatts. Designers should verify reverse leakage at maximum ambient temperature, since Schottky leakage rises steeply and can erode the headroom of very high-impedance nodes.
Recommended
Recommended Products Summary
Engineering reference data for 1N5711 β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | 1N5712 | 1N6263 | 1N5711 | 5082-2800 |
|---|---|---|---|---|---|
| Package | DO-35 (DO-204AH) axial glass | DO-35 (DO-204AH) - same | DO-35 (DO-204AH) - same | DO-35 (DO-204AH) - same | DO-35 (DO-204AH) - same |
| Brand | STMicroelectronics | STMicroelectronics | STMicroelectronics | MACOM Technology Solutions | Broadcom (HP/Agilent) |
| Peak Reverse Voltage | 70 V | 70 V | 70 V | 70 V | [DATA_NEEDED] |
| Forward Current | 15 mA | 15 mA | [DATA_NEEDED] | 15 mA | [DATA_NEEDED] |
| Forward Voltage | 410 mV (typical) | Slightly higher binning | Slightly higher binning | 410 mV (typical) | [DATA_NEEDED] |
| Power Dissipation | 430 mW | 430 mW | [DATA_NEEDED] | 430 mW | [DATA_NEEDED] |
| Switching Character | Ultrafast Schottky | Ultrafast Schottky | Ultrafast Schottky | Ultrafast Schottky (tau ~100 ps) | Ultrafast Schottky |
| Qualification Grade | Commercial/industrial | Commercial/industrial | Commercial/industrial | Commercial/industrial | JAN military (MIL-PRF-19500/444) |
Key Differentiators
- High 70 V breakdown for a small-signal Schottky (vs 5082-2800)
- Lower forward voltage than PN signal diodes (vs 1N4148)
- Identical part number available in military grades (vs 1N5711UR-1)
Design Notes
In RF detector and mixer layouts, keep 1N5711 axial leads as short as possible - each centimeter of lead adds roughly 1 nH of series inductance, which forms a low-pass with the diode capacitance and erodes UHF sensitivity. Bend leads at least 2 mm away from the glass body to avoid cracking the hermetic seal, and limit soldering iron dwell time. Ground the cathode return directly at the detector node to prevent RF coupling into the baseband output.
Respect the 15 mA continuous forward current and 430 mW dissipation limits. Estimated: at 410 mV forward voltage and 15 mA, the diode dissipates only about 6 mV*15 = 6.15 mW under steady detection, far below the limit; thermal risk arises mainly in pulse-clamping duty where peak currents can be much higher. Size any series resistance so repetitive peak current stays within the datasheet surge rating, and never use this part where a power Schottky such as the 1N58xx series is required.
Schottky reverse leakage rises exponentially with temperature; in high-impedance detector or sample-and-hold nodes, leakage at elevated ambient can discharge hold capacitors and shift the apparent detection threshold. Characterize the circuit at maximum operating temperature, not just 25 C. Also, when substituting 1N5712, 1N6263, or 5082-2800 in precision detectors, verify the forward-voltage specification of the exact manufacturer's datasheet - binning differs slightly between families even within the same DO-35 package.
Compliance Information
Compliance data was not present in the verified web data. The DO-35 axial glass package is a through-hole hermetic type; check the ST product page for current RoHS/REACH declarations before export.
