BAT42-TAP vs 1N5711 비교

다음의 상세 나란히 비교: BAT42-TAP 제조: Vishay Intertechnology 및 1N5711 제조: STMicroelectronics. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

Vishay Intertechnology
BAT42-TAP BAT42-TAP - 30V 200mA Schottky Diode DO-35 | Vishay

BAT42-TAP - 30V 200mA Schottky Diode DO-35 | Vishay

BAT42-TAP ✓ 활성

사양 비교

파라미터 BAT42-TAP 1N5711
브랜드 Vishay Intertechnology STMicroelectronics
카테고리 Diodes Diodes
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.04 $0.18
Diode Type Small-Signal Schottky Barrier Small-signal Schottky barrier (RF) diode
Repetitive Peak Reverse Voltage (VRRM) 30 V —
Average Forward Current (IF(AV)) 200 mA —
Non-Repetitive Surge Current (IFSM) 4.0 A —
Forward Voltage (VF) [DATA_NEEDED: forward voltage at rated current] 0.41 V (at 1 mA, per MACOM)
Reverse Recovery Fast switching (Schottky, no stored charge) —
Junction Capacitance [DATA_NEEDED: diode capacitance] —
Reverse Leakage Current (IR) [DATA_NEEDED: reverse leakage at rated VR] —
패키지 DO-204AH (DO-35) glass axial DO-35 (DO-204AH) hermetic axial-lead glass
실장 유형 Through Hole Through-Hole
Termination Style Axial Leads —
Packaging Suffix -TAP (Ammo tape packing) —
Configuration Single Diode —
Protection Feature PN junction guard ring against ESD / excessive voltage —
동작 온도 [DATA_NEEDED: operating temperature range] [DATA_NEEDED: operating temperature range]
AEC-Q101 Option Qualified version available on request —
RoHS 상태 Compliant Compliant
Mounting Technology Wave solder / hand solder —
Peak Reverse Voltage (VRRM) — 70 V
Continuous Forward Current (IF) — 15 mA
Power Dissipation — 430 mW
Total Capacitance — 2 pF
Junction Capacitance (Cj) — 1 pF
Dynamic Resistance — 35 ohm
Breakdown Voltage (VB) — 70 V
Switching Speed — Picosecond class (ultrafast, no minority-carrier storage)
Junction Structure — Metal-to-silicon junction with PN guard ring
Reverse Leakage Current — [DATA_NEEDED: reverse leakage current at rated VR]

데이터시트 & 자료

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