BAT43-R0 vs BAT43 Comparison
Detailed side-by-side comparison of BAT43-R0 by Taiwan Semiconductor and BAT43 by STMicroelectronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Taiwan Semiconductor
BAT43-R0
BAT43-R0 - 30V 200mA Schottky Diode DO-35 | Taiwan Semiconductor
BAT43-R0 β ActiveSTMicroelectronics
BAT43
BAT43 - 30V 200mA Schottky Diode DO-35 | STMicroelectronics
BAT43 β ActiveSpecification Comparison
| Parameter | BAT43-R0 | BAT43 |
|---|---|---|
| Brand | Taiwan Semiconductor | STMicroelectronics |
| Category | Diodes | Diodes |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.02 | $0.08 |
| Diode Type | Small Signal Schottky Barrier | β |
| Repetitive Peak Reverse Voltage (VRRM) | 30 V | 30 V |
| Average Forward Current (IF(AV)) | 200 mA | β |
| Maximum Forward Voltage (VF) | 1 V | β |
| Non-Repetitive Peak Forward Surge Current (IFSM) | 4 A | β |
| Power Dissipation | 200 mW | β |
| Junction Operating Temperature | -65C to +125C | β |
| Reverse Recovery | Fast switching (Schottky, majority carrier) | β |
| Package | DO-35 axial glass (through hole) | DO-35 (glass axial, through-hole) |
| Mounting Type | Through Hole | Through Hole |
| Configuration | Single diode | Single diode |
| ESD Protection | Fast guard ring against excessive voltage (ESD) | Integrated guard ring against excessive voltage |
| RoHS Status | Compliant | [DATA_NEEDED: RoHS status] |
| Forward Voltage Turn-On | Very low turn-on voltage | β |
| Capacitance (Cj) | [DATA_NEEDED: junction capacitance] | β |
| Leakage Current (IR) | [DATA_NEEDED: reverse leakage current] | β |
| Packaging Type | [DATA_NEEDED: tape/reel or bulk option] | β |
| Device Type | β | Small Signal Schottky Diode |
| Forward Continuous Current (IF) | β | 200 mA at Ta = 25 C |
| Repetitive Peak Forward Current (IFRM) | β | 500 mA (tp <= 1 s, delta <= 0.5) |
| Non-Repetitive Surge Current (IFSM) | β | 4 A (tp = 10 ms) |
| Power Dissipation (Ptot) | β | 200 mW at Tl = 65 C |
| Technology | β | Metal-to-silicon Schottky barrier |
| Forward Voltage | β | [DATA_NEEDED: forward voltage at rated current] |
| Reverse Leakage Current | β | [DATA_NEEDED: reverse leakage current] |
| Case Style | β | Hermetically sealed glass body |
| Operating Temperature | β | [DATA_NEEDED: operating temperature range] |