BAT43-R0 vs BAT43 Comparaison
Comparaison détaillée côte à côte de BAT43-R0 par Taiwan Semiconductor et BAT43 par STMicroelectronics. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Taiwan Semiconductor
BAT43-R0 - 30V 200mA Schottky Diode DO-35 | Taiwan Semiconductor
BAT43-R0 ✓ ActifComparaison des spécifications
| Paramètre | BAT43-R0 | BAT43 |
|---|---|---|
| Marque | Taiwan Semiconductor | STMicroelectronics |
| Catégorie | Diodes | Diodes |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,02 | $0,08 |
| Diode Type | Small Signal Schottky Barrier | — |
| Repetitive Peak Reverse Voltage (VRRM) | 30 V | 30 V |
| Average Forward Current (IF(AV)) | 200 mA | — |
| Maximum Forward Voltage (VF) | 1 V | — |
| Non-Repetitive Peak Forward Surge Current (IFSM) | 4 A | — |
| Power Dissipation | 200 mW | — |
| Junction Operating Temperature | -65C to +125C | — |
| Reverse Recovery | Fast switching (Schottky, majority carrier) | — |
| Boîtier | DO-35 axial glass (through hole) | DO-35 (glass axial, through-hole) |
| Type de montage | Through Hole | Through Hole |
| Configuration | Single diode | Single diode |
| ESD Protection | Fast guard ring against excessive voltage (ESD) | Integrated guard ring against excessive voltage |
| Statut RoHS | Compliant | [DATA_NEEDED: RoHS status] |
| Forward Voltage Turn-On | Very low turn-on voltage | — |
| Capacitance (Cj) | [DATA_NEEDED: junction capacitance] | — |
| Leakage Current (IR) | [DATA_NEEDED: reverse leakage current] | — |
| Packaging Type | [DATA_NEEDED: tape/reel or bulk option] | — |
| Device Type | — | Small Signal Schottky Diode |
| Forward Continuous Current (IF) | — | 200 mA at Ta = 25 C |
| Repetitive Peak Forward Current (IFRM) | — | 500 mA (tp <= 1 s, delta <= 0.5) |
| Non-Repetitive Surge Current (IFSM) | — | 4 A (tp = 10 ms) |
| Dissipation de puissance (Ptot) | — | 200 mW at Tl = 65 C |
| Technology | — | Metal-to-silicon Schottky barrier |
| Forward Voltage | — | [DATA_NEEDED: forward voltage at rated current] |
| Reverse Leakage Current | — | [DATA_NEEDED: reverse leakage current] |
| Case Style | — | Hermetically sealed glass body |
| Température de fonctionnement | — | [DATA_NEEDED: operating temperature range] |