BAT43-R0 vs BAT43 对比

详细并排对比 BAT43-R0 出自 Taiwan Semiconductor 和 BAT43 出自 STMicroelectronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Taiwan Semiconductor
BAT43-R0 BAT43-R0 - 30V 200mA Schottky Diode DO-35 | Taiwan Semiconductor

BAT43-R0 - 30V 200mA Schottky Diode DO-35 | Taiwan Semiconductor

BAT43-R0 ✓ 量产中
STMicroelectronics
BAT43 BAT43 - 30V 200mA Schottky Diode DO-35 | STMicroelectronics

BAT43 - 30V 200mA Schottky Diode DO-35 | STMicroelectronics

BAT43 ✓ 量产中

规格对比

参数 BAT43-R0 BAT43
品牌 Taiwan Semiconductor STMicroelectronics
分类 Diodes Diodes
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.02 $0.08
Diode Type Small Signal Schottky Barrier —
Repetitive Peak Reverse Voltage (VRRM) 30 V 30 V
Average Forward Current (IF(AV)) 200 mA —
Maximum Forward Voltage (VF) 1 V —
Non-Repetitive Peak Forward Surge Current (IFSM) 4 A —
Power Dissipation 200 mW —
Junction Operating Temperature -65C to +125C —
Reverse Recovery Fast switching (Schottky, majority carrier) —
封装 DO-35 axial glass (through hole) DO-35 (glass axial, through-hole)
安装类型 Through Hole Through Hole
Configuration Single diode Single diode
ESD Protection Fast guard ring against excessive voltage (ESD) Integrated guard ring against excessive voltage
RoHS 状态 Compliant [DATA_NEEDED: RoHS status]
Forward Voltage Turn-On Very low turn-on voltage —
Capacitance (Cj) [DATA_NEEDED: junction capacitance] —
Leakage Current (IR) [DATA_NEEDED: reverse leakage current] —
Packaging Type [DATA_NEEDED: tape/reel or bulk option] —
Device Type — Small Signal Schottky Diode
Forward Continuous Current (IF) — 200 mA at Ta = 25 C
Repetitive Peak Forward Current (IFRM) — 500 mA (tp <= 1 s, delta <= 0.5)
Non-Repetitive Surge Current (IFSM) — 4 A (tp = 10 ms)
功耗(Ptot) — 200 mW at Tl = 65 C
Technology — Metal-to-silicon Schottky barrier
Forward Voltage — [DATA_NEEDED: forward voltage at rated current]
Reverse Leakage Current — [DATA_NEEDED: reverse leakage current]
Case Style — Hermetically sealed glass body
工作温度 — [DATA_NEEDED: operating temperature range]

数据手册与资源

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