BAT43-R0 vs BAT43 Comparación
Comparación detallada lado a lado de BAT43-R0 por Taiwan Semiconductor y BAT43 por STMicroelectronics. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Taiwan Semiconductor
BAT43-R0 - 30V 200mA Schottky Diode DO-35 | Taiwan Semiconductor
BAT43-R0 ✓ ActivoComparación de especificaciones
| Parámetro | BAT43-R0 | BAT43 |
|---|---|---|
| Marca | Taiwan Semiconductor | STMicroelectronics |
| Categoría | Diodes | Diodes |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,02 | $0,08 |
| Diode Type | Small Signal Schottky Barrier | — |
| Repetitive Peak Reverse Voltage (VRRM) | 30 V | 30 V |
| Average Forward Current (IF(AV)) | 200 mA | — |
| Maximum Forward Voltage (VF) | 1 V | — |
| Non-Repetitive Peak Forward Surge Current (IFSM) | 4 A | — |
| Power Dissipation | 200 mW | — |
| Junction Operating Temperature | -65C to +125C | — |
| Reverse Recovery | Fast switching (Schottky, majority carrier) | — |
| Encapsulado | DO-35 axial glass (through hole) | DO-35 (glass axial, through-hole) |
| Tipo de montaje | Through Hole | Through Hole |
| Configuration | Single diode | Single diode |
| ESD Protection | Fast guard ring against excessive voltage (ESD) | Integrated guard ring against excessive voltage |
| Estado RoHS | Compliant | [DATA_NEEDED: RoHS status] |
| Forward Voltage Turn-On | Very low turn-on voltage | — |
| Capacitance (Cj) | [DATA_NEEDED: junction capacitance] | — |
| Leakage Current (IR) | [DATA_NEEDED: reverse leakage current] | — |
| Packaging Type | [DATA_NEEDED: tape/reel or bulk option] | — |
| Device Type | — | Small Signal Schottky Diode |
| Forward Continuous Current (IF) | — | 200 mA at Ta = 25 C |
| Repetitive Peak Forward Current (IFRM) | — | 500 mA (tp <= 1 s, delta <= 0.5) |
| Non-Repetitive Surge Current (IFSM) | — | 4 A (tp = 10 ms) |
| Disipación de potencia (Ptot) | — | 200 mW at Tl = 65 C |
| Technology | — | Metal-to-silicon Schottky barrier |
| Forward Voltage | — | [DATA_NEEDED: forward voltage at rated current] |
| Reverse Leakage Current | — | [DATA_NEEDED: reverse leakage current] |
| Case Style | — | Hermetically sealed glass body |
| Temperatura de funcionamiento | — | [DATA_NEEDED: operating temperature range] |