BFU520XR vs BFU520AR Comparison
Detailed side-by-side comparison of BFU520XR by NXP Semiconductors and BFU520AR by NXP Semiconductors. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | BFU520XR | BFU520AR |
|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors |
| Category | Transistors | Transistors |
| Lifecycle Status | Active | Active |
| Polarity | NPN | NPN |
| Technology | Silicon wideband RF BJT | — |
| Family | BFU5 | — |
| Maximum Operating Frequency | 2 GHz | — |
| Continuous Collector Current | 0.05 A (50 mA) | — |
| Application Band | L Band | — |
| Number of Elements | 1 | — |
| Package | SOT143R (4-pin, plastic, dual emitter) | SOT-23 (TO-236AB), 3-pin |
| Mounting Type | Surface Mount | Surface Mount |
| Configuration | Single NPN, dual emitter pins | — |
| Typical Application | High speed, low noise amplification | — |
| Collector-Emitter Voltage (Vceo) | [DATA_NEEDED: VCEO] | — |
| Transition Frequency (ft) | [DATA_NEEDED: fT] | — |
| Noise Figure NF | [DATA_NEEDED: NF] | — |
| Total Power Dissipation Ptot | [DATA_NEEDED: Ptot] | — |
| Operating Temperature Range | [DATA_NEEDED: operating temperature] | -40C to +150C |
| Ordering Suffix | XR | — |
| Transistor Type | — | NPN wideband silicon RF BJT |
| Collector-Emitter Breakdown Voltage (VCEO) | — | 12 V |
| Continuous Collector Current (IC) | — | 30 mA |
| Transition Frequency (ft) | — | 10 GHz |
| Total Power Dissipation (Ptot) | — | 450 mW |
| Qualification | — | AEC-Q101 (automotive qualified per distributor listing) |
| Product Family | — | BFU5 wideband RF transistor family |
| Intended Application Band | — | Small signal to medium power up to 2 GHz |
| Noise Figure | — | [DATA_NEEDED: noise figure] |
| DC Current Gain (hFE) | — | [DATA_NEEDED: hFE] |
| RoHS Status | — | [DATA_NEEDED: RoHS status] |
| Packaging | — | Reel (R suffix, tape and reel) |