BFU520XR vs BFU520AR 비교
다음의 상세 나란히 비교: BFU520XR 제조: NXP Semiconductors 및 BFU520AR 제조: NXP Semiconductors. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | BFU520XR | BFU520AR |
|---|---|---|
| 브랜드 | NXP Semiconductors | NXP Semiconductors |
| 카테고리 | Transistors | Transistors |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.23 | $0.26 |
| Polarity | NPN | NPN |
| Technology | Silicon wideband RF BJT | — |
| Family | BFU5 | — |
| Maximum Operating Frequency | 2 GHz | — |
| Continuous Collector Current | 0.05 A (50 mA) | — |
| Application Band | L Band | — |
| Number of Elements | 1 | — |
| 패키지 | SOT143R (4-pin, plastic, dual emitter) | SOT-23 (TO-236AB), 3-pin |
| 실장 유형 | Surface Mount | Surface Mount |
| Configuration | Single NPN, dual emitter pins | — |
| Typical Application | High speed, low noise amplification | — |
| 컬렉터-이미터 전압 (Vceo) | [DATA_NEEDED: VCEO] | — |
| 전이 주파수 (ft) | [DATA_NEEDED: fT] | — |
| Noise Figure NF | [DATA_NEEDED: NF] | — |
| Total Power Dissipation Ptot | [DATA_NEEDED: Ptot] | — |
| 동작 온도 범위 | [DATA_NEEDED: operating temperature] | -40C to +150C |
| Ordering Suffix | XR | — |
| 트랜지스터 유형 | — | NPN wideband silicon RF BJT |
| Collector-Emitter Breakdown Voltage (VCEO) | — | 12 V |
| Continuous Collector Current (IC) | — | 30 mA |
| 전이 주파수 (ft) | — | 10 GHz |
| Total Power Dissipation (Ptot) | — | 450 mW |
| Qualification | — | AEC-Q101 (automotive qualified per distributor listing) |
| Product Family | — | BFU5 wideband RF transistor family |
| Intended Application Band | — | Small signal to medium power up to 2 GHz |
| Noise Figure | — | [DATA_NEEDED: noise figure] |
| DC Current Gain (hFE) | — | [DATA_NEEDED: hFE] |
| RoHS 상태 | — | [DATA_NEEDED: RoHS status] |
| Packaging | — | Reel (R suffix, tape and reel) |