BFU520XR vs BFU520AR 比較
詳細な並列比較: BFU520XR メーカー: NXP Semiconductors および BFU520AR メーカー: NXP Semiconductors。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | BFU520XR | BFU520AR |
|---|---|---|
| ブランド | NXP Semiconductors | NXP Semiconductors |
| カテゴリ | Transistors | Transistors |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.23 | $0.26 |
| Polarity | NPN | NPN |
| Technology | Silicon wideband RF BJT | — |
| Family | BFU5 | — |
| Maximum Operating Frequency | 2 GHz | — |
| Continuous Collector Current | 0.05 A (50 mA) | — |
| Application Band | L Band | — |
| Number of Elements | 1 | — |
| パッケージ | SOT143R (4-pin, plastic, dual emitter) | SOT-23 (TO-236AB), 3-pin |
| 実装タイプ | Surface Mount | Surface Mount |
| Configuration | Single NPN, dual emitter pins | — |
| Typical Application | High speed, low noise amplification | — |
| コレクタ-エミッタ間電圧（Vceo） | [DATA_NEEDED: VCEO] | — |
| 遷移周波数（ft） | [DATA_NEEDED: fT] | — |
| Noise Figure NF | [DATA_NEEDED: NF] | — |
| Total Power Dissipation Ptot | [DATA_NEEDED: Ptot] | — |
| 動作温度範囲 | [DATA_NEEDED: operating temperature] | -40C to +150C |
| Ordering Suffix | XR | — |
| トランジスタタイプ | — | NPN wideband silicon RF BJT |
| Collector-Emitter Breakdown Voltage (VCEO) | — | 12 V |
| Continuous Collector Current (IC) | — | 30 mA |
| 遷移周波数（ft） | — | 10 GHz |
| Total Power Dissipation (Ptot) | — | 450 mW |
| Qualification | — | AEC-Q101 (automotive qualified per distributor listing) |
| Product Family | — | BFU5 wideband RF transistor family |
| Intended Application Band | — | Small signal to medium power up to 2 GHz |
| Noise Figure | — | [DATA_NEEDED: noise figure] |
| DC Current Gain (hFE) | — | [DATA_NEEDED: hFE] |
| RoHS ステータス | — | [DATA_NEEDED: RoHS status] |
| Packaging | — | Reel (R suffix, tape and reel) |