BSC005N03LS5IATMA1 vs IAUCN08S7L033ATMA1 Comparison
Detailed side-by-side comparison of BSC005N03LS5IATMA1 by Infineon and IAUCN08S7L033ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUCN08S7L033ATMA1
IAUCN08S7L033ATMA1 - 80V 3.3mΞ© OptiMOS 7 N-MOSFET | Infineon
IAUCN08S7L033ATMA1 β ActiveSpecification Comparison
| Parameter | BSC005N03LS5IATMA1 | IAUCN08S7L033ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.32 | $0.86 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSC005N03LS5IATMA1 | β |
| Technology | OptiMOS 5 (N-channel trench MOSFET) | OptiMOS 7 trench MOSFET |
| Drain-Source Voltage (VDS) max | 30 V | β |
| Continuous Drain Current (ID) at Ta | 42 A | β |
| Continuous Drain Current (ID) at Tc | 433 A | β |
| Pulsed Drain Current (ID,pulse) | [DATA_NEEDED: pulsed drain current value] | β |
| On-Resistance RDS(on) max | 0.55 mΞ© at VGS = 10 V, ID = 50 A | β |
| Gate-Source Threshold Voltage VGS(th) | 2 V (typ) at VGS = 10 mA | β |
| Power Dissipation at Ta | 3 W | β |
| Power Dissipation at Tc | 188 W | β |
| Operating Junction Temperature | -55 Β°C to +175 Β°C | β |
| Package | PG-TDSON-8 FL (SuperSO8 5x6) | PG-TDSON-8-34 (SSO8, 5x6 mmΒ²) |
| Mounting Type | Surface Mount | Surface Mount |
| Polarity | N-Channel | β |
| RoHS Status | Compliant (per LCSC listing) | Compliant |
| MSL Level | [DATA_NEEDED: MSL rating] | 1 (per JEDEC J-STD-020, typical for this package) |
| Series | β | Automotive OptiMOS 7 |
| Transistor Type | β | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | β | 80 V |
| Maximum On-Resistance (RDS(on)) at VGS=10V | β | 3.3 mΞ© |
| Continuous Drain Current (ID) at Tj | β | 130 A |
| Continuous Drain Current (ID) at Tc=25Β°C | β | [DATA_NEEDED: ID at Tc=25C] |
| Power Dissipation (PD) at Tc=25Β°C | β | 118 W |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typical] |
| Gate-Source Voltage (VGS) max | β | Β±20 V (typical Infineon OptiMOS 7 limit) |
| Operating Temperature Range | β | -55Β°C to +175Β°C (TJ) |
| Qualification | β | Automotive Grade (per Infineon datasheet header) |