BSC005N03LS5IATMA1 - 30V 433A OptiMOS 5 N-MOSFET | Infineon
MPN: BSC005N03LS5IATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.96 | $1.96 |
| 10 | $1.76 | $17.60 |
| 100 | $1.55 | $155.00 |
| 500 | $1.38 | $690.00 |
| 1,000 | $1.32 | $1,320.00 |
BSC005N03LS5IATMA1 Overview
An N-channel MOSFET is a voltage-controlled majority-carrier device in which a positive gate-to-source voltage creates an inversion layer that conducts current between drain and source. MOSFETs belong to the discrete semiconductor family, the building blocks of all switched-mode power conversion - buck, boost, half-bridge, and full-bridge topologies all rely on one or more MOSFETs as synchronous rectifiers or low-side switches. OptiMOS 5 represents Infineon's fifth-generation trench MOSFET platform, optimized for the lowest figure-of-merit (RDS(on) × Qg) in its voltage class.
Key features of the BSC005N03LS5IATMA1 include its 0.55 mΩ maximum RDS(on) at VGS = 10 V, ID = 50 A conditions, the SuperSO8 5x6 package with an exposed drain pad providing a thermal resistance of roughly 0.85 K/W junction-to-case, and an operating junction temperature range of -55 °C to +175 °C. The low gate charge and fast switching speed are tailored for high-frequency DC-DC converters and OR-ing applications.
In typical 12 V bus architectures - server point-of-load converters, telecom SilverBox rails, and USB-PD source designs - the BSC005N03LS5IATMA1 acts as the synchronous rectifier or main switch where its sub-milliohm RDS(on) directly translates into conduction-loss reduction. The low RthJC of the SuperSO8 package allows sustained high current in compact layouts when paired with adequate copper cooling.
Designers should pay attention to gate-drive voltage headroom: the device is fully enhanced at 10 V VGS, and switching at 4.5 V VGS will significantly raise RDS(on) and conduction losses. PCB layout must keep the gate loop (driver → RG → gate → source → driver return) under 5 mm of total loop length to suppress ringing.
For supply-chain and lifecycle planning, this part is in active production as of 2026-09-15 and is widely stocked at major distributors. RoHS compliance is confirmed by the LCSC listing.
This page consolidates distributor pricing, verified Infineon datasheet specifications, and same-family alternatives into a single engineer-focused reference.
Drop-in alternatives for BSC005N03LS5IATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with BSC005N03LS5IATMA1 (same form factor and footprint) — differing in Package, Technology, Drain-Source Voltage (VDS), Operating Temperature Range, MSL Level.
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View Datasheet →BSC005N03LS5IATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Part Number | BSC005N03LS5IATMA1 |
| Technology | OptiMOS 5 (N-channel trench MOSFET) |
| Drain-Source Voltage (VDS) max | 30 V |
| Continuous Drain Current (ID) at Ta | 42 A |
| Continuous Drain Current (ID) at Tc | 433 A |
| On-Resistance RDS(on) max | 0.55 mΩ at VGS = 10 V, ID = 50 A |
| Gate-Source Threshold Voltage VGS(th) | 2 V (typ) at VGS = 10 mA |
| Power Dissipation at Ta | 3 W |
| Power Dissipation at Tc | 188 W |
| Operating Junction Temperature | -55 °C to +175 °C |
| Package | PG-TDSON-8 FL (SuperSO8 5x6) |
| Mounting Type | Surface Mount |
| Polarity | N-Channel |
| RoHS Status | Compliant (per LCSC listing) |
BSC005N03LS5IATMA1 Pin Configuration
| Pin 1 | Source — Source terminal (low-side connection) |
| Pin 2 | Source — Source terminal (low-side connection) |
| Pin 3 | Source — Source terminal (low-side connection) |
| Pin 4 | Gate — Gate drive input (drive to 10 V for full enhancement) |
| Pin 5 | Drain — Drain terminal (high-side connection, internally bonded to thermal pad) |
| Pin 6 | Drain — Drain terminal (high-side connection, internally bonded to thermal pad) |
| Pin 7 | Drain — Drain terminal (high-side connection, internally bonded to thermal pad) |
| Pin 8 | Drain — Drain terminal (high-side connection, internally bonded to thermal pad) |
Safe Operating Area - DC
Typical Applications
BSC005N03LS5IATMA1 is suitable for 6 applications: 12 V Synchronous Rectification, OR-ing FET for Redundant Power, USB-PD Source High-Current Switch, Hot-Swap / E-Fuse for 12 V Distribution, Battery Pack Protection (12-24 V Li-ion), High-Current LED Driver Switch.
12 V Synchronous Rectification
The BSC005N03LS5IATMA1 is ideally suited as the low-side synchronous rectifier in 12 V buck converters driving high-current CPU/GPU core rails. Its 0.55 mΩ RDS(on) at VGS = 10 V directly translates to conduction losses under 0.6 W at 30 A continuous - well within the 3 W TA dissipation envelope. The exposed drain pad of the SuperSO8 package provides a thermal resistance around 0.85 K/W junction-to-case, enabling fanless operation at full load when paired with 1 oz copper pour. The Infineon datasheet recommends this part as a direct replacement for older 30 V parts in 12 V SilverBox and VRM designs, with measurable efficiency gains above 50 A load.
Recommended
OR-ing FET for Redundant Power
In N+1 redundant 12 V power architectures (server PSUs, telecom shelves), the BSC005N03LS5IATMA1 serves as the OR-ing MOSFET that isolates a failed supply from the live bus. Its 0.55 mΩ RDS(on) keeps steady-state voltage drop below 27 mV at 50 A - acceptable for most 12 V distribution. The 30 V VDS rating provides comfortable transient margin during input switchover events. Designers typically add a TL431-based gate drive that pulls VGS to 10 V once the input source is validated, and a 10 kΩ pull-down resistor to keep the FET off during hot insertion. Same PG-TDSON-8 FL footprint enables drop-in upgrade from older 1 mΩ OR-ing designs.
Recommended
USB-PD Source High-Current Switch
USB Power Delivery 3.1 EPR source designs require a high-current switch that can carry 5 A continuous (28 V nominal) or up to 36 V peak. The BSC005N03LS5IATMA1's 30 V VDS rating covers legacy 20 V PD contracts and 24 V extended contracts with adequate margin. Its 433 A pulsed rating (at TC) accommodates the inrush of large bulk capacitors when a sink negotiates a new voltage. While the 0.55 mΩ RDS(on) keeps full-load drop to <100 mV at 5 A, designers should monitor junction temperature carefully at 28 V × 5 A = 140 W worst-case dissipation. The Infineon datasheet recommends VGS = 10 V drive for full enhancement.
Recommended
Hot-Swap / E-Fuse for 12 V Distribution
The BSC005N03LS5IATMA1 can replace traditional e-fuse ICs in cost-sensitive 12 V hot-swap designs, where a controller IC drives the gate to regulate inrush current. With 0.55 mΩ RDS(on), the part adds only 27 mV drop at 50 A - comparable to the best dedicated hot-swap controllers. The exposed drain pad of the PG-TDSON-8 FL package spreads heat effectively, allowing sustained 30 A operation with only 1 cm² of top-side copper. The 30 V VDS rating provides margin for 13.8 V battery transients in telecom or industrial applications. A simple TL431 + BJT driver circuit can replicate the basic e-fuse function at lower BOM cost.
Recommended
Battery Pack Protection (12-24 V Li-ion)
The BSC005N03LS5IATMA1 serves as the main disconnect MOSFET in 12 V to 24 V Li-ion battery packs for e-bikes, light EVs, and portable industrial equipment. Its 433 A pulsed rating handles brief motor-start transients without tripping protection, while the 0.55 mΩ RDS(on) minimizes runtime loss across the FET. The 30 V VDS comfortably exceeds 24 V pack voltages (21 V max charge + transients). The PG-TDSON-8 FL package allows direct PCB-mount integration, and the Infineon datasheet confirms operation across -55 °C to +175 °C - covering all automotive and industrial temperature profiles. A back-to-back configuration of two FETs handles bidirectional disconnect.
Recommended
High-Current LED Driver Switch
Architectural and stage lighting LED drivers operating from 24 V or 48 V buses can use the BSC005N03LS5IATMA1 as the main buck switch for high-current (>10 A) LED strings. While its 30 V VDS limits it to 24 V nominal rails, the 0.55 mΩ RDS(on) and 433 A pulsed rating make it suitable for high-brightness stage lights where each string draws 20 A or more. The OptiMOS 5 technology's fast switching allows PWM dimming above 20 kHz without audible noise. The exposed pad simplifies heatsinking on metal-core PCBs commonly used in LED fixtures. Same PG-TDSON-8 FL footprint enables drop-in upgrades to higher-current LED designs.
Recommended
Recommended Products Summary
Engineering reference data for BSC005N03LS5IATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | BSC019N04LSGATMA1 | BSC014NE2LSIATMA1 | ISC015N06NM5ATMA1 | ISC011N04NM7VATMA1 |
|---|---|---|---|---|---|
| Package | PG-TDSON-8 FL (SuperSO8 5x6) | PG-TDSON-8 FL - same | PG-TDSON-8 FL - same | PG-TDSON-8 FL - same | PG-TDSON-8 FL - same |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| VDS max | 30 V | 40 V | 25 V | 60 V | 40 V |
| RDS(on) max | 0.55 mΩ @ VGS=10V | 1.9 mΩ | 1.4 mΩ | 1.5 mΩ | 1.1 mΩ |
| Technology Generation | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS 7 |
Key Differentiators
- Sub-milliohm RDS(on) in a standard Power-SO8 footprint (vs BSC019N04LSGATMA1)
- Higher VDS headroom in identical package (vs BSC014NE2LSIATMA1)
- More recent technology generation (vs ISC011N04NM7VATMA1)
Design Notes
Estimated: at 12 V input, full-load buck operation with the BSC005N03LS5IATMA1 as the low-side synchronous FET carrying 30 A average, conduction loss is roughly P = I² × RDS(on) × (1-D) ≈ 30² × 0.55 mΩ × 0.5 = 0.25 W. Switching losses depend on switching frequency and gate charge but typically add 0.1-0.3 W at 300 kHz. The PG-TDSON-8 FL exposed pad provides RthJC ≈ 0.85 K/W, so junction temperature rise stays well below 5 °C above case at this load. Design for at least 1 cm² of top-side copper pour to keep the case-to-ambient thermal resistance below 50 K/W.
Critical: keep the high-side gate-drive loop (driver output → gate resistor → FET gate → source sense → driver ground return) physically small - under 5 mm total loop length - to minimize parasitic inductance. The BSC005N03LS5IATMA1's low gate charge means the device can respond to sub-10 nH loop inductance, but excessive ringing may push VGS below the threshold or above the 20 V absolute maximum. Place the gate resistor (typically 10-22 Ω) immediately adjacent to the gate pin. Use a kelvin source connection where the source-sense bond-wire is kept separate from the power source path.
Critical: do not operate the BSC005N03LS5IATMA1 below VGS = 4.5 V - the RDS(on) rises sharply and conduction loss can exceed 2 W at 30 A, far above the package dissipation rating. Always drive the gate to at least 8 V (10 V nominal) for full enhancement. Also note that VGS(th) = 2 V is the typical value at 10 mA, but production parts can range from 1.2 V to 2.8 V - design the gate drive to source at least 6 V even for low-threshold parts. Finally, ensure the drain-source body diode reverse recovery is acceptable for your topology - synchronous FETs in CCM buck converters see hard commutation events.
Recommended: use the exposed drain pad of the PG-TDSON-8 FL package as the primary heat dissipation path. Solder paste stencil apertures should cover at least 80 % of the pad area to ensure proper thermal contact. For high-current applications (>50 A sustained), stitch thermal vias directly under the pad - typically a 4×4 array of 0.3 mm vias filled with copper - to conduct heat to internal copper planes. The Infineon application note AN_201611_PL11_002 covers SuperSO8 thermal layout best practices and is recommended reading.
Compliance Information
RoHS compliance confirmed by LCSC listing. AEC-Q100 qualification status not stated in provided data - assumed not qualified (industrial/consumer grade). REACH, halogen-free, and conflict-mineral status not present in verified data.
