BSC011N03LSIATMA1 vs BSC032N04LSATMA1 Comparison

Detailed side-by-side comparison of BSC011N03LSIATMA1 by Infineon and BSC032N04LSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSC032N04LSATMA1

BSC032N04LSATMA1 - 40V 3.2mΩ OptiMOS 5 N-MOSFET | Infineon

BSC032N04LSATMA1 ✓ Active

Specification Comparison

Parameter BSC011N03LSIATMA1 BSC032N04LSATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.32 $0.32
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS™ 30 V
Channel Type N-Channel
Drain-to-Source Voltage (VDS) 30 V
Gate-to-Source Voltage (VGS) ±20 V
Continuous Drain Current (ID) at TA=25°C 37 A
Continuous Drain Current (ID) at TC=25°C 100 A
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed IDM value]
On-State Resistance RDS(on) at VGS=10V 1.1 mΩ (typical)
Power Dissipation at TA=25°C 2.5 W
Power Dissipation at TC=25°C 96 W
Operating Junction Temperature -55 °C to +150 °C -55°C to +175°C
Package PG-TDSON-8-7 (Surface Mount) PG-TDSON-8-6 (SuperSO8 5x6 mm)
Mounting Type Surface Mount Surface Mount
MSL Level 1 (per JEDEC J-STD-020)
RoHS Status Compliant Compliant
Part Series OptiMOS 5 40V
FET Type N-Channel
Drain-Source Voltage (VDS) 40 V
Continuous Drain Current (ID) at Ta=25°C 21 A
Continuous Drain Current (ID) at Tc=25°C 98 A
RDS(on) max at VGS=10V 3.2 mΩ
Power Dissipation (Ta) 2.5 W
Power Dissipation (Tc) 52 W
Gate-Source Voltage (VGS) ±20 V
Technology OptiMOS 5 trench
Lead-Free Yes

Datasheets & Resources

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