BSC011N03LSIATMA1 vs BSC032N04LSATMA1 对比

详细并排对比 BSC011N03LSIATMA1 出自 Infineon 和 BSC032N04LSATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
BSC032N04LSATMA1 BSC032N04LSATMA1 - 40V 3.2mΩ OptiMOS 5 N-MOSFET | Infineon

BSC032N04LSATMA1 - 40V 3.2mΩ OptiMOS 5 N-MOSFET | Infineon

BSC032N04LSATMA1 ✓ 量产中

规格对比

参数 BSC011N03LSIATMA1 BSC032N04LSATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $1.32 $0.32
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS™ 30 V —
Channel Type N-Channel —
Drain-to-Source Voltage (VDS) 30 V —
Gate-to-Source Voltage (VGS) ±20 V —
Continuous Drain Current (ID) at TA=25°C 37 A —
Continuous Drain Current (ID) at TC=25°C 100 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed IDM value] —
On-State Resistance RDS(on) at VGS=10V 1.1 mΩ (typical) —
Power Dissipation at TA=25°C 2.5 W —
Power Dissipation at TC=25°C 96 W —
工作结温 -55 °C to +150 °C -55°C to +175°C
封装 PG-TDSON-8-7 (Surface Mount) PG-TDSON-8-6 (SuperSO8 5x6 mm)
安装类型 Surface Mount Surface Mount
MSL 等级 1 (per JEDEC J-STD-020) —
RoHS 状态 Compliant Compliant
Part Series — OptiMOS 5 40V
FET Type — N-Channel
Drain-Source Voltage (VDS) — 40 V
Continuous Drain Current (ID) at Ta=25°C — 21 A
Continuous Drain Current (ID) at Tc=25°C — 98 A
RDS(on) max at VGS=10V — 3.2 mΩ
Power Dissipation (Ta) — 2.5 W
Power Dissipation (Tc) — 52 W
Gate-Source Voltage (VGS) — ±20 V
Technology — OptiMOS 5 trench
Lead-Free — Yes

数据手册与资源

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