BSC014N04LSATMA1 vs BSC014N04LSTATMA1 Comparison
Detailed side-by-side comparison of BSC014N04LSATMA1 by Infineon and BSC014N04LSTATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | BSC014N04LSATMA1 | BSC014N04LSTATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 | — |
| Transistor Type | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 40 V | 40 V |
| Continuous Drain Current (ID) at Ta | 32 A | — |
| Continuous Drain Current (ID) at Tc | 100 A | — |
| RDS(on) max at VGS=10 V | 1.4 mOhm | — |
| Power Dissipation at Ta | 2.5 W | — |
| Power Dissipation at Tc | 96 W | — |
| Gate-Source Voltage (VGS) max | 20 V | — |
| Operating Temperature Range | -55C to +175C | -55°C to +150°C |
| Package | SuperSO8 (TDSON-8 FL) 5x6 mm | PG-TDSON-8 FL (SuperSO8 5x6) |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | Trench (OptiMOS 5, thin-wafer) | OptiMOS 5 (N-Channel Trench) |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 (unlimited) | MSL1 |
| Part Number | — | BSC014N04LSTATMA1 |
| Gate-Source Voltage (VGS) | — | ±20 V |
| Continuous Drain Current (ID) @ TA=25°C | — | 33 A |
| Continuous Drain Current (ID) @ TC=25°C | — | 100 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance R DS(on) max @ VGS=10V | — | 1.45 mΩ |
| R DS(on) typical @ VGS=10V | — | [DATA_NEEDED: RDS(on) typical] |
| Power Dissipation (TA) | — | 3 W |
| Power Dissipation (TC) | — | 115 W |
| Pin Count | — | 8 |
| Lead-Free | — | Yes |