BSC014N04LSATMA1 - 40V 1.4mOhm OptiMOS 5 N-Ch MOSFET | Infineon
MPN: BSC014N04LSATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.32 | $1.32 |
| 10 | $1.18 | $11.80 |
| 100 | $1.05 | $105.00 |
| 500 | $0.92 | $460.00 |
| 1,000 | $0.81 | $810.00 |
| 3,000 | $0.74 | $2,220.00 |
Drop-in alternatives for BSC014N04LSATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
BSC014N04LSIATMA1
✅ Drop-In✓ In Stock
$0.39 / Unit
View Datasheet →IAUC100N04S6N015ATMA1
✅ Drop-In✓ In Stock
$0.78 / Unit
View Datasheet →BSC035N04LSGATMA1
✅ Drop-In✓ In Stock
$0.48 / Unit
View Datasheet →BSC0501NSIATMA1
✅ Drop-In✓ In Stock
$0.65 / Unit
View Datasheet →ISC0805NLSATMA1
✅ Drop-In✓ In Stock
$0.82 / Unit
View Datasheet →BSC014N04LSATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Series | OptiMOS 5 |
| Transistor Type | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 40 V |
| Continuous Drain Current (ID) at Ta | 32 A |
| Continuous Drain Current (ID) at Tc | 100 A |
| RDS(on) max at VGS=10 V | 1.4 mOhm |
| Power Dissipation at Ta | 2.5 W |
| Power Dissipation at Tc | 96 W |
| Gate-Source Voltage (VGS) max | 20 V |
| Operating Temperature Range | -55C to +175C |
| Package | SuperSO8 (TDSON-8 FL) 5x6 mm |
| Mounting Type | Surface Mount |
| Technology | Trench (OptiMOS 5, thin-wafer) |
| RoHS Status | Compliant |
| MSL Level | 1 (unlimited) |
BSC014N04LSATMA1 Pin Configuration
| Pin 1 | G — Gate |
| Pin 2 | S — Source |
| Pin 3 | S — Source |
| Pin 4 | D/Pad — Drain / Thermal pad (exposed) |
| Pin 5 | D — Drain |
| Pin 6 | D — Drain |
| Pin 7 | D — Drain |
| Pin 8 | D — Drain |
Safe Operating Area (DC)
Typical Applications
BSC014N04LSATMA1 is suitable for 7 applications: 12V Synchronous Rectification in Server DC-DC Converters, 24V Industrial Point-of-Load Regulators, USB-PD and e-Mobility Auxiliary Rails, Motor Drive H-Bridge (Low-Side Switch), Battery Management System (BMS) Protection FET, Hot-Swap and OR-ing Controllers in Telecom, Solar Micro-Inverter Low-Side Stage.
12V Synchronous Rectification in Server DC-DC Converters
The BSC014N04LSATMA1 is the textbook low-side synchronous rectifier in 12 V VRM and POL stages. Its 1.4 mOhm R_DS(on) at VGS=10 V keeps full-load efficiency above 96 percent at 25 A, and its ~30 nC total gate charge lets a 500 kHz buck converter switch cleanly without overheating the gate driver. Place the part on the cold side of the PCB with a 1 sq-in copper pour and the exposed pad handles the thermal load directly.
Recommended
24V Industrial Point-of-Load Regulators
In 24 V industrial bus rails the BSC014N04LSATMA1's 40 V VDS rating gives 15 V transient margin, while its 100 A continuous ID at Tc supports 30 A continuous output without thermal throttling. The OptiMOS 5 thin-wafer process gives a 31 percent better FOM than the previous generation, which directly reduces heatsink cost in factory-automation POL converters. A 100 nF gate bypass and a gate-drive resistor of 10-22 Ohm complete the layout.
Recommended
USB-PD and e-Mobility Auxiliary Rails
USB-PD 3.1 sinks and 48 V mild-hybrid auxiliary rails demand a 40 V MOSFET with very low R_DS(on) at modest switching loss. The BSC014N04LSATMA1 fits this niche well: 1.4 mOhm RDS(on) plus 175 C junction rating lets engineers run at 300 kHz without exceeding thermal limits. In 12 V e-bike and e-scooter DC-DC stages it is the standard low-side switch, often paired with a BSC097N06NS high-side.
Recommended
Motor Drive H-Bridge (Low-Side Switch)
Brushless DC motor drives up to 25 A continuous can use the BSC014N04LSATMA1 as the low-side switch in each half-bridge leg. The 1.4 mOhm RDS(on) minimizes rotor-current ripple heating, and the exposed SuperSO8 pad handles regenerative braking transients. The 40 V rating easily covers 24 V motor supplies and supports back-EMF spikes when paired with a TVS clamp of 33 V working voltage.
Recommended
Battery Management System (BMS) Protection FET
In 4S-8S Li-ion battery packs the BSC014N04LSATMA1 can serve as the pack-protection MOSFET when continuous discharge is below 100 A. Its 1.4 mOhm RDS(on) at VGS=10 V keeps voltage drop under 100 mV at 70 A, preserving usable battery capacity. The 40 V rating covers 12S packs (nominally 36 V) with margin for transient overvoltage. Use two devices in parallel for higher current packs.
Recommended
Hot-Swap and OR-ing Controllers in Telecom
The BSC014N04LSATMA1 is suited to 12 V/24 V telecom hot-swap and OR-ing FET roles where the part is fully on most of the time. Its 1.4 mOhm RDS(on) at VGS=10 V gives forward-voltage drop below 50 mV at 35 A, well inside typical OR-ing diode-replacement budgets. The 175 C junction temperature allows operation at elevated ambient temperatures in outdoor enclosures without derating.
Recommended
Solar Micro-Inverter Low-Side Stage
Sub-1 kW solar micro-inverters often use the BSC014N04LSATMA1 as the low-side switch in the 30-50 kHz boost PFC stage. Its low gate charge and 1.4 mOhm RDS(on) help meet 98 percent EU efficiency targets while keeping the BOM cost below comparable GaN alternatives. A 100 nF gate bypass plus 10 Ohm gate resistor completes the layout.
Recommended
Recommended Products Summary
Engineering reference data for BSC014N04LSATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | BSC014N04LS | IAUC100N04S6N015ATMA1 | BSC035N04LSGATMA1 | BSC0501NSIATMA1 | ISC0805NLSATMA1 |
|---|---|---|---|---|---|---|
| Package | SuperSO8 (TDSON-8 FL) 5x6 mm | SuperSO8 (TDSON-8 FL) 5x6 mm - same | SuperSO8 (TDSON-8 FL) 5x6 mm - same | SuperSO8 (TDSON-8 FL) 5x6 mm - same | SuperSO8 (TDSON-8 FL) 5x6 mm - same | SuperSO8 (TDSON-8 FL) 5x6 mm - same |
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| VDS max | 40 V | 40 V | 40 V | 40 V | 40 V | 40 V |
| RDS(on) max @ VGS=10V | 1.4 mOhm | 1.4 mOhm | 1.5 mOhm | 3.5 mOhm | 5.0 mOhm | 8.0 mOhm |
| Continuous ID @ Tc | 100 A | 100 A | 100 A | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Automotive Qualified | No | No | Yes (AEC-Q101) | No | No | No |
| Technology | OptiMOS 5 (thin-wafer trench) | OptiMOS 5 (thin-wafer trench) | OptiMOS 5 (Auto) | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 |
| Unit price @ qty 1000 (USD) | 0.81 | 0.79 | 1.05 | 0.62 | 0.48 | 0.40 |
Key Differentiators
- Lowest RDS(on) in the Infineon 40V SuperSO8 family (vs BSC035N04LSGATMA1)
- Automotive-grade drop-in option exists within the same footprint (vs IAUC100N04S6N015ATMA1)
- OptiMOS 5 thin-wafer process: 31 percent lower FOM vs prior generation (vs BSC0501NSIATMA1)
Design Notes
Estimated: at VIN=12 V, VOUT=1.0 V, IOUT=25 A synchronous rectification, the low-side FET sees roughly I^2 * R * (1-D) ~ 0.5 W average conduction loss in the BSC014N04LSATMA1. With ~50 C/W theta_JA on a 1 sq-in copper pour (SuperSO8 package), junction temperature rises 25 C above ambient - well within the 175 C limit. Always verify with a thermocouple on the exposed pad during prototype validation.
The SuperSO8 (TDSON-8 FL) exposed pad is the primary thermal path AND the drain connection. Use a PCB thermal via array (typically 9-16 vias of 0.3 mm diameter) directly under the pad, connected to inner-plane copper. Stitch the source pins (2/3) with a wide copper pour on the top layer to minimize source-inductance-induced ringing during switching transitions.
Do not drive the BSC014N04LSATMA1 gate below 4.5 V when the part must deliver rated 1.4 mOhm - the on-resistance rises roughly 2x. Always use a 10 V gate drive for synchronous-rectifier roles. Add a 100 nF ceramic bypass (X7R or X5R) directly at the gate pin to suppress Miller-capacitance-induced parasitic turn-on, especially in half-bridge layouts where dV/dt can exceed 5 kV/us.
Keep the gate-drive loop area below 0.5 sq-cm by routing gate and source return on adjacent layers. Place the gate-drive resistor (typically 10-22 Ohm) within 5 mm of the gate pin. Source-inductance in the power loop should be minimized by placing input capacitors as close as possible to the drain and source pads - this reduces ringing amplitude and EMI, which is the single largest PCB layout improvement at 500 kHz+ switching frequencies.
Compliance Information
AEC-Q101 (not Q100) applies to the automotive variant IAUC100N04S6N015ATMA1 - the standard BSC014N04LSATMA1 is not automotive qualified per the Infineon product page. RoHS and REACH compliant per Infineon material declaration.
