BSC014N04LSATMA1 vs BSC014N04LSTATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC014N04LSATMA1 disebabkan oleh Infineon dan BSC014N04LSTATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | BSC014N04LSATMA1 | BSC014N04LSTATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 | — |
| Jenis Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 40 V | 40 V |
| Continuous Drain Current (ID) at Ta | 32 A | — |
| Continuous Drain Current (ID) at Tc | 100 A | — |
| RDS(on) max at VGS=10 V | 1.4 mOhm | — |
| Power Dissipation at Ta | 2.5 W | — |
| Power Dissipation at Tc | 96 W | — |
| Gate-Source Voltage (VGS) max | 20 V | — |
| Gambaran Suhu Operasi | -55C to +175C | -55°C to +150°C |
| Kemasan | SuperSO8 (TDSON-8 FL) 5x6 mm | PG-TDSON-8 FL (SuperSO8 5x6) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Technology | Trench (OptiMOS 5, thin-wafer) | OptiMOS 5 (N-Channel Trench) |
| Status RoHS | Compliant | Compliant |
| Aras MSL | 1 (unlimited) | MSL1 |
| Part Number | — | BSC014N04LSTATMA1 |
| Gate-Source Voltage (VGS) | — | ±20 V |
| Continuous Drain Current (ID) @ TA=25°C | — | 33 A |
| Continuous Drain Current (ID) @ TC=25°C | — | 100 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance R DS(on) max @ VGS=10V | — | 1.45 mΩ |
| R DS(on) typical @ VGS=10V | — | [DATA_NEEDED: RDS(on) typical] |
| Power Dissipation (TA) | — | 3 W |
| Power Dissipation (TC) | — | 115 W |
| Kiraan Pin | — | 8 |
| Lead-Free | — | Yes |