BSC014N06NSATMA1 vs BSC011N03LSIATMA1 Comparison
Detailed side-by-side comparison of BSC014N06NSATMA1 by Infineon and BSC011N03LSIATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC011N03LSIATMA1 - 30V N-Ch OptiMOS 1.1mΞ© Power MOSFET | Infineon
BSC011N03LSIATMA1 β ActiveSpecification Comparison
| Parameter | BSC014N06NSATMA1 | BSC011N03LSIATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.89 | $1.32 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 | OptiMOSβ’ 30 V |
| Transistor Type | N-Channel MOSFET | β |
| Drain-Source Voltage (VDS) | 60 V | β |
| Gate-Source Voltage (VGS) Max | +/- 20 V | β |
| Continuous Drain Current (ID) at Ta | 30 A | β |
| Continuous Drain Current (ID) at Tc | 100 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed IDM value] |
| On-Resistance RDS(on) Typ @ VGS=10V | 1.4 mOhm | β |
| On-Resistance RDS(on) Max @ VGS=10V | 1.45 mOhm | β |
| Power Dissipation (Ta) | 2.5 W | β |
| Power Dissipation (Tc) | 156 W | β |
| Operating Temperature Range | -55C to +150C | β |
| Package | PG-TDSON-8-17 (SuperSO8 5x6 mm) | PG-TDSON-8-7 (Surface Mount) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | 1 | 1 (per JEDEC J-STD-020) |
| RoHS Status | Compliant | Compliant |
| Technology | OptiMOS 5 (shielded-gate trench) | β |
| Channel Type | β | N-Channel |
| Drain-to-Source Voltage (VDS) | β | 30 V |
| Gate-to-Source Voltage (VGS) | β | Β±20 V |
| Continuous Drain Current (ID) at TA=25Β°C | β | 37 A |
| Continuous Drain Current (ID) at TC=25Β°C | β | 100 A |
| On-State Resistance RDS(on) at VGS=10V | β | 1.1 mΞ© (typical) |
| Power Dissipation at TA=25Β°C | β | 2.5 W |
| Power Dissipation at TC=25Β°C | β | 96 W |
| Operating Junction Temperature | β | -55 Β°C to +150 Β°C |